2EDL8013GXUMA1 ROCHESTER ELECTRONICS
Hersteller: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - 2EDL8013GXUMA1 - 2EDL8013 GATE DRIVER N-CHANNEL MOSFET
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 5775 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details 2EDL8013GXUMA1 ROCHESTER ELECTRONICS
Description: IC GATE DRVR HALF-BRIDGE 8VDFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 8V ~ 17V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 120 V, Supplier Device Package: PG-VDSON-8-4, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Current - Peak Output (Source, Sink): 5A, 6A, Part Status: Not For New Designs, DigiKey Programmable: Not Verified.
Weitere Produktangebote 2EDL8013GXUMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| 2EDL8013GXUMA1 | Hersteller : Infineon Technologies |
Level-Shift High-Side Low-Side Dual Channel Driver |
Produkt ist nicht verfügbar |
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2EDL8013GXUMA1 | Hersteller : Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8VDFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 17V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 120 V Supplier Device Package: PG-VDSON-8-4 Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 5A, 6A Part Status: Not For New Designs DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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| 2EDL8013GXUMA1 | Hersteller : Infineon Technologies |
Gate Drivers Y |
Produkt ist nicht verfügbar |