2EDL8012GXUMA1 Infineon Technologies
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Technische Details 2EDL8012GXUMA1 Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8VDFN, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 8V ~ 17V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 120 V, Supplier Device Package: PG-VDSON-8-4, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: N-Channel MOSFET, Current - Peak Output (Source, Sink): 5A, 6A, Part Status: Active, DigiKey Programmable: Not Verified.
Weitere Produktangebote 2EDL8012GXUMA1
Foto | Bezeichnung | Hersteller | Beschreibung |
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2EDL8012GXUMA1 | Hersteller : Infineon Technologies | Level-Shift High-Side Low-Side Dual Channel Driver |
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2EDL8012GXUMA1 | Hersteller : Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8VDFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 8V ~ 17V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 120 V Supplier Device Package: PG-VDSON-8-4 Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Current - Peak Output (Source, Sink): 5A, 6A Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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2EDL8012GXUMA1 | Hersteller : Infineon Technologies | Gate Drivers Y |
Produkt ist nicht verfügbar |