2301H Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET P-CH 30V 2.8A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Power Dissipation (Max): 890mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.05 EUR |
| 15000+ | 0.046 EUR |
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Technische Details 2301H Goford Semiconductor
Description: MOSFET P-CH 30V 2.8A SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V, Power Dissipation (Max): 890mW (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 2.5 V, Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V.
Weitere Produktangebote 2301H nach Preis ab 0.1 EUR bis 0.53 EUR
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2301H | Hersteller : Goford Semiconductor |
Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)< Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Power Dissipation (Max): 890mW (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V |
auf Bestellung 2826 Stücke: Lieferzeit 10-14 Tag (e) |
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2301-H | Hersteller : Bourns Inc. |
Description: FIXED IND 10UH 20A 5 MOHM TH Packaging: Bulk Tolerance: ±15% Package / Case: Radial, Horizontal (Open) Size / Dimension: 1.280" Dia (32.51mm) Mounting Type: Through Hole Shielding: Unshielded Type: Toroidal Operating Temperature: -55°C ~ 105°C DC Resistance (DCR): 5mOhm Max Material - Core: Iron Powder Inductance Frequency - Test: 1 kHz Height - Seated (Max): 0.650" (16.51mm) Inductance: 10 µH Current Rating (Amps): 20 A |
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2301H | Hersteller : Goford Semiconductor |
Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)< Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Power Dissipation (Max): 890mW (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V |
Produkt ist nicht verfügbar |