1SS387,L3F

1SS387,L3F Toshiba Semiconductor and Storage


1SS387.pdf Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 96000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8000+0.055 EUR
16000+ 0.046 EUR
24000+ 0.045 EUR
56000+ 0.041 EUR
Mindestbestellmenge: 8000
Produktrezensionen
Produktbewertung abgeben

Technische Details 1SS387,L3F Toshiba Semiconductor and Storage

Description: DIODE GEN PURP 80V 100MA ESC, Packaging: Tape & Reel (TR), Package / Case: SC-79, SOD-523, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz, Current - Average Rectified (Io): 100mA, Supplier Device Package: ESC, Operating Temperature - Junction: 125°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA, Current - Reverse Leakage @ Vr: 500 nA @ 80 V.

Weitere Produktangebote 1SS387,L3F nach Preis ab 0.044 EUR bis 0.36 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
1SS387,L3F 1SS387,L3F Hersteller : Toshiba Semiconductor and Storage 1SS387.pdf Description: DIODE GEN PURP 80V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 108256 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
50+0.35 EUR
73+ 0.24 EUR
148+ 0.12 EUR
500+ 0.099 EUR
1000+ 0.069 EUR
2000+ 0.06 EUR
Mindestbestellmenge: 50
1SS387,L3F 1SS387,L3F Hersteller : Toshiba 1SS387_datasheet_en_20220601-1916459.pdf Diodes - General Purpose, Power, Switching Switching Diode
auf Bestellung 493432 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+0.36 EUR
12+ 0.25 EUR
100+ 0.1 EUR
1000+ 0.06 EUR
2500+ 0.058 EUR
8000+ 0.046 EUR
24000+ 0.044 EUR
Mindestbestellmenge: 8