1SS307(TE85L,F) Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: DIODE GEN PURP 30V 100MA S-MINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: S-Mini
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.15 EUR |
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Technische Details 1SS307(TE85L,F) Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 30V 100MA S-MINI, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Technology: Standard, Capacitance @ Vr, F: 6pF @ 0V, 1MHz, Current - Average Rectified (Io): 100mA, Supplier Device Package: S-Mini, Operating Temperature - Junction: 125°C (Max), Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA, Current - Reverse Leakage @ Vr: 10 nA @ 30 V.
Weitere Produktangebote 1SS307(TE85L,F) nach Preis ab 0.13 EUR bis 0.57 EUR
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1SS307(TE85L,F) | Hersteller : Toshiba |
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1SS307(TE85L,F) | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 30V 100MA S-MINI Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 6pF @ 0V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: S-Mini Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA Current - Reverse Leakage @ Vr: 10 nA @ 30 V |
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