Technische Details 1N916TR ON Semiconductor
Description: DIODE GEN PURP 100V 200MA DO35, Packaging: Tape & Reel (TR), Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: DO-35, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA, Current - Reverse Leakage @ Vr: 5 µA @ 75 V.
Weitere Produktangebote 1N916TR
Foto | Bezeichnung | Hersteller | Beschreibung |
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1N916TR | Hersteller : onsemi |
Description: DIODE GEN PURP 100V 200MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
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