1N6483-E3/96 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 800V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 0.21 EUR |
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Technische Details 1N6483-E3/96 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO213AB, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF (Glass), Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 8pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AB, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 800 V.
Weitere Produktangebote 1N6483-E3/96 nach Preis ab 0.26 EUR bis 0.72 EUR
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1N6483-E3/96 | Hersteller : Vishay General Semiconductor |
Rectifiers 1.0 Amp 800 Volt |
auf Bestellung 17453 Stücke: Lieferzeit 10-14 Tag (e) |
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1N6483-E3/96 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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1N6483-E3/96 | Hersteller : Vishay |
Diode Switching 800V 1A 2-Pin DO-213AB T/R |
Produkt ist nicht verfügbar |
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1N6483-E3/96 | Hersteller : Vishay |
Diode Switching 800V 1A 2-Pin DO-213AB T/R |
Produkt ist nicht verfügbar |
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1N6483-E3/96 | Hersteller : Vishay |
Diode Switching 800V 1A 2-Pin DO-213AB T/R |
Produkt ist nicht verfügbar |
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| 1N6483-E3/96 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; DO213AB,GL41; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 8pF Kind of package: reel; tape Max. forward impulse current: 30A Case: DO213AB; GL41 Max. forward voltage: 1.1V Leakage current: 0.2mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| 1N6483-E3/96 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; DO213AB,GL41; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 8pF Kind of package: reel; tape Max. forward impulse current: 30A Case: DO213AB; GL41 Max. forward voltage: 1.1V Leakage current: 0.2mA |
Produkt ist nicht verfügbar |