1N6474USe3 Microchip Technology
Hersteller: Microchip Technology
Description: TVS DIODE 30.5VWM 47.5VC G AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 30.5V
Supplier Device Package: G, Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 30.5VWM 47.5VC G AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 30.5V
Supplier Device Package: G, Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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Technische Details 1N6474USe3 Microchip Technology
Description: TVS DIODE 30.5VWM 47.5VC G AXIAL, Packaging: Bulk, Package / Case: G, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TA), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 32A, Voltage - Reverse Standoff (Typ): 30.5V, Supplier Device Package: G, Axial, Unidirectional Channels: 1, Voltage - Breakdown (Min): 33V, Voltage - Clamping (Max) @ Ipp: 47.5V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No.
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