-Axial-Microchip.JPG "1N646/TR")
1N646/TR Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 300V 400MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 400mA
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 200 nA @ 300 V
Description: DIODE GEN PURP 300V 400MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 400mA
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 200 nA @ 300 V
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Technische Details 1N646/TR Microchip Technology
Description: DIODE GEN PURP 300V 400MA DO35, Packaging: Tape & Reel (TR), Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 400mA, Supplier Device Package: DO-35 (DO-204AH), Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 300 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA, Current - Reverse Leakage @ Vr: 200 nA @ 300 V.
Weitere Produktangebote 1N646/TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 1N646/TR | Hersteller : Microsemi |
 Rectifiers |
Produkt ist nicht verfügbar |