Technische Details 1N6080 Microchip Technology
Description: DIODE GEN PURP 100V 5A AXIAL, Packaging: Bulk, Package / Case: Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Capacitance @ Vr, F: 230pF @ 5V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: Axial, Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V.
Weitere Produktangebote 1N6080
Foto | Bezeichnung | Hersteller | Beschreibung |
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1N6080 | Hersteller : MICROSEMI |
![]() ![]() Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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1N6080 | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 155°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
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1N6080 | Hersteller : Semtech Corporation |
![]() Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 230pF @ 5V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
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1N6080 | Hersteller : Semtech |
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Produkt ist nicht verfügbar |
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1N6080 | Hersteller : Microchip / Microsemi |
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Produkt ist nicht verfügbar |