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1N6080/TR Microchip Technology
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Description: DIODE GEN PURP 100V 2A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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Technische Details 1N6080/TR Microchip Technology
Description: DIODE GEN PURP 100V 2A, Packaging: Tape & Reel (TR), Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 2A, Supplier Device Package: A, Axial, Operating Temperature - Junction: -65°C ~ 155°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V.
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1N6080/TR | Hersteller : Microchip Technology |
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