![1N5810 1N5810](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2729/MFG_G4-PACKAGE.jpg)
1N5810 Solid State Inc.
![1N5802-ssi.pdf](/images/adobe-acrobat.png)
Description: DIODE GEN PURP 125V 6A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 125 V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10+ | 2.01 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 1N5810 Solid State Inc.
Description: DIODE GEN PURP 125V 6A AXIAL, Packaging: Bulk, Package / Case: Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 6A, Supplier Device Package: Axial, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 125 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A, Current - Reverse Leakage @ Vr: 5 µA @ 125 V.
Weitere Produktangebote 1N5810
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
1N5810 | Hersteller : Microchip Technology |
![]() |
Produkt ist nicht verfügbar |
||
1N5810 | Hersteller : Microchip Technology |
![]() |
Produkt ist nicht verfügbar |