1N5627-TAP Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.71 EUR |
5000+ | 0.67 EUR |
12500+ | 0.64 EUR |
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Produktbewertung abgeben
Technische Details 1N5627-TAP Vishay General Semiconductor - Diodes Division
Category: THT universal diodes, Description: Diode: rectifying; THT; 800V; 3A; Ammo Pack; Ifsm: 100A; SOD64; 7.5us, Semiconductor structure: single diode, Max. off-state voltage: 0.8kV, Load current: 3A, Max. load current: 18A, Case: SOD64, Max. forward voltage: 1V, Max. forward impulse current: 100A, Mounting: THT, Kind of package: Ammo Pack, Features of semiconductor devices: avalanche breakdown effect; glass passivated, Capacitance: 60pF, Reverse recovery time: 7.5µs, Leakage current: 10µA, Type of diode: rectifying, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote 1N5627-TAP nach Preis ab 0.57 EUR bis 1.71 EUR
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1N5627-TAP | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 3A; Ammo Pack; Ifsm: 100A; SOD64; 7.5us Semiconductor structure: single diode Max. off-state voltage: 0.8kV Load current: 3A Max. load current: 18A Case: SOD64 Max. forward voltage: 1V Max. forward impulse current: 100A Mounting: THT Kind of package: Ammo Pack Features of semiconductor devices: avalanche breakdown effect; glass passivated Capacitance: 60pF Reverse recovery time: 7.5µs Leakage current: 10µA Type of diode: rectifying Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9911 Stücke: Lieferzeit 7-14 Tag (e) |
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1N5627-TAP | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 3A; Ammo Pack; Ifsm: 100A; SOD64; 7.5us Semiconductor structure: single diode Max. off-state voltage: 0.8kV Load current: 3A Max. load current: 18A Case: SOD64 Max. forward voltage: 1V Max. forward impulse current: 100A Mounting: THT Kind of package: Ammo Pack Features of semiconductor devices: avalanche breakdown effect; glass passivated Capacitance: 60pF Reverse recovery time: 7.5µs Leakage current: 10µA Type of diode: rectifying |
auf Bestellung 9911 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5627-TAP | Hersteller : Vishay Semiconductors | Rectifiers 3.0 Amp 800 Volt |
auf Bestellung 12138 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5627-TAP | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 3A SOD64 Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7.5 µs Technology: Avalanche Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 3506 Stücke: Lieferzeit 10-14 Tag (e) |
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