1N5626-TAP Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE AVALANCHE 600V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 32500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.62 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 1N5626-TAP Vishay General Semiconductor - Diodes Division
Category: THT universal diodes, Description: Diode: rectifying; THT; 600V; 3A; Ammo Pack; Ifsm: 100A; SOD64; 7.5us, Capacitance: 60pF, Max. off-state voltage: 0.6kV, Max. load current: 18A, Max. forward voltage: 1V, Load current: 3A, Semiconductor structure: single diode, Reverse recovery time: 7.5µs, Max. forward impulse current: 100A, Leakage current: 10µA, Kind of package: Ammo Pack, Type of diode: rectifying, Features of semiconductor devices: avalanche breakdown effect; glass passivated, Mounting: THT, Case: SOD64, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote 1N5626-TAP nach Preis ab 0.53 EUR bis 1.19 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1N5626-TAP | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 600V 3A SOD64 Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7.5 µs Technology: Avalanche Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 4964 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
1N5626-TAP | Hersteller : Vishay Semiconductors |
Rectifiers 3.0 Amp 600 Volt |
auf Bestellung 8229 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
1N5626-TAP | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 3A; Ammo Pack; Ifsm: 100A; SOD64; 7.5us Capacitance: 60pF Max. off-state voltage: 0.6kV Max. load current: 18A Max. forward voltage: 1V Load current: 3A Semiconductor structure: single diode Reverse recovery time: 7.5µs Max. forward impulse current: 100A Leakage current: 10µA Kind of package: Ammo Pack Type of diode: rectifying Features of semiconductor devices: avalanche breakdown effect; glass passivated Mounting: THT Case: SOD64 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5754 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
|
1N5626-TAP | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 3A; Ammo Pack; Ifsm: 100A; SOD64; 7.5us Capacitance: 60pF Max. off-state voltage: 0.6kV Max. load current: 18A Max. forward voltage: 1V Load current: 3A Semiconductor structure: single diode Reverse recovery time: 7.5µs Max. forward impulse current: 100A Leakage current: 10µA Kind of package: Ammo Pack Type of diode: rectifying Features of semiconductor devices: avalanche breakdown effect; glass passivated Mounting: THT Case: SOD64 |
auf Bestellung 5754 Stücke: Lieferzeit 14-21 Tag (e) |
|