Technische Details 1N5393G EIC
Description: DIODE GEN PURP 200V 1.5A DO204AC, Packaging: Tape & Reel (TR), Package / Case: DO-204AC, DO-15, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1.5A, Supplier Device Package: DO-204AC (DO-15), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Weitere Produktangebote 1N5393G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
![]() |
1N5393G | Hersteller : Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
Produkt ist nicht verfügbar |
|
![]() |
1N5393G | Hersteller : Taiwan Semiconductor |
![]() |
Produkt ist nicht verfügbar |