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1N5230C-TAP Vishay General Semiconductor - Diodes Division
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Description: DIODE ZENER 4.7V 500MW DO35
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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Technische Details 1N5230C-TAP Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 500MW DO35, Tolerance: ±2%, Packaging: Tape & Box (TB), Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Operating Temperature: 175°C, Voltage - Zener (Nom) (Vz): 4.7 V, Impedance (Max) (Zzt): 19 Ohms, Supplier Device Package: DO-35 (DO-204AH), Part Status: Active, Power - Max: 500 mW, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA, Current - Reverse Leakage @ Vr: 5 µA @ 2 V.
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1N5230C-TAP | Hersteller : Vishay Semiconductors |
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