1N4305-1E3 Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 50V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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Technische Details 1N4305-1E3 Microchip Technology
Description: DIODE GEN PURP 50V 200MA DO35, Packaging: Bulk, Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 2 ns, Technology: Standard, Current - Average Rectified (Io): 200mA, Supplier Device Package: DO-204AH (DO-35), Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 mA, Current - Reverse Leakage @ Vr: 100 nA @ 50 V.
Weitere Produktangebote 1N4305-1E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 1N4305-1E3 | Hersteller : Microchip Technology | Diodes - General Purpose, Power, Switching Signal or Computer Diode |
Produkt ist nicht verfügbar |