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1N4150W-HE3-18 Vishay Semiconductors
auf Bestellung 8821 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
7+ | 0.43 EUR |
10+ | 0.3 EUR |
100+ | 0.12 EUR |
1000+ | 0.074 EUR |
2500+ | 0.069 EUR |
10000+ | 0.055 EUR |
20000+ | 0.053 EUR |
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Technische Details 1N4150W-HE3-18 Vishay Semiconductors
Description: DIODE GEN PURP 50V 200MA SOD123, Packaging: Tape & Reel (TR), Package / Case: SOD-123, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: SOD-123, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA, Current - Reverse Leakage @ Vr: 100 nA @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote 1N4150W-HE3-18
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1N4150W-HE3-18 | Hersteller : Vishay |
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1N4150W-HE3-18 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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1N4150W-HE3-18 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 200MA SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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1N4150W-HE3-18 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 200MA SOD123 Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |