auf Bestellung 2843 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
9+ | 0.33 EUR |
13+ | 0.23 EUR |
100+ | 0.12 EUR |
1000+ | 0.07 EUR |
10000+ | 0.051 EUR |
25000+ | 0.049 EUR |
50000+ | 0.044 EUR |
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Technische Details 1N4003B-G Comchip Technology
Description: DIODE GEN PURP 200V 1A DO41, Packaging: Bulk, Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-41, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Weitere Produktangebote 1N4003B-G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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1N4003B-G | Hersteller : Comchip Technology | Diode 200V 1A 2-Pin DO-41 |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4003B-G | Hersteller : Comchip Technology |
Description: DIODE GEN PURP 200V 1A DO41 Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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