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1N3649 Solid State Inc.
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Description: DIODE GEN PURP 800V 3.3A DO4
Packaging: Box
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3.3A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
10+ | 3.43 EUR |
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Technische Details 1N3649 Solid State Inc.
Description: DIODE GEN PURP 800V 3.3A DO4, Packaging: Box, Package / Case: DO-203AA, DO-4, Stud, Mounting Type: Stud Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 3.3A, Supplier Device Package: DO-4, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V.
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1N3649 | Hersteller : Microchip Technology |
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