Technische Details 1N3064 ON Semiconductor
Description: DIODE GEN PURP 75V 300MA DO35, Packaging: Bulk, Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Current - Average Rectified (Io): 300mA, Supplier Device Package: DO-35, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 75 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA, Current - Reverse Leakage @ Vr: 100 nA @ 50 V.
Weitere Produktangebote 1N3064
Foto | Bezeichnung | Hersteller | Beschreibung |
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1N3064 | Hersteller : Microchip Technology |
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1N3064 | Hersteller : MICROSEMI |
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1N3064 | Hersteller : onsemi |
![]() Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
Produkt ist nicht verfügbar |
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1N3064 | Hersteller : Microsemi Corporation |
![]() Packaging: Bulk Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 75mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 75 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
Produkt ist nicht verfügbar |
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1N3064 | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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1N3064 | Hersteller : onsemi / Fairchild |
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Produkt ist nicht verfügbar |