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1N1202AR GeneSiC Semiconductor
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Technische Details 1N1202AR GeneSiC Semiconductor
Description: DIODE GEN PURP REV 200V 12A DO5, Packaging: Bulk, Package / Case: DO-203AB, DO-5, Stud, Mounting Type: Chassis, Stud Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Reverse Polarity, Current - Average Rectified (Io): 12A, Supplier Device Package: DO-5, Operating Temperature - Junction: -65°C ~ 200°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A, Current - Reverse Leakage @ Vr: 10 µA @ 50 V.
Weitere Produktangebote 1N1202AR
Foto | Bezeichnung | Hersteller | Beschreibung |
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1N1202AR | Hersteller : GeneSiC Semiconductor |
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1N1202AR | Hersteller : GeneSiC Semiconductor |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 12A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
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1N1202AR | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 12A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 38 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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1N1202AR | Hersteller : GeneSiC Semiconductor |
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Produkt ist nicht verfügbar |
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1N1202AR | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |