1A7 DC COMPONENTS
Hersteller: DC COMPONENTS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; R1; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: R1
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; R1; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: R1
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: Ammo Pack
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4857 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
417+ | 0.17 EUR |
652+ | 0.11 EUR |
1112+ | 0.064 EUR |
1583+ | 0.045 EUR |
1894+ | 0.038 EUR |
2263+ | 0.032 EUR |
2632+ | 0.027 EUR |
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Technische Details 1A7 DC COMPONENTS
Description: DIODE GEN PURP 1KV 1A R-1, Packaging: Tape & Box (TB), Package / Case: R-1, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: R-1, Operating Temperature - Junction: -65°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
Weitere Produktangebote 1A7 nach Preis ab 0.014 EUR bis 0.17 EUR
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1A7 | Hersteller : DC COMPONENTS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ammo Pack; Ifsm: 30A; R1; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Case: R1 Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: Ammo Pack |
auf Bestellung 4857 Stücke: Lieferzeit 14-21 Tag (e) |
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1A7 | Hersteller : SMC Diode Solutions |
Description: DIODE GEN PURP 1KV 1A R-1 Packaging: Tape & Box (TB) Package / Case: R-1, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: R-1 Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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