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18N10 Goford Semiconductor
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Description: MOSFET N-CH 100V 25A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V
FET Feature: Standard
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.29 EUR |
15000+ | 0.27 EUR |
30000+ | 0.24 EUR |
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Technische Details 18N10 Goford Semiconductor
Description: MOSFET N-CH 100V 25A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252 (DPAK), Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V, FET Feature: Standard, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.
Weitere Produktangebote 18N10 nach Preis ab 0.21 EUR bis 101.44 EUR
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18N10 | Hersteller : Goford Semiconductor |
![]() Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V FET Feature: Standard Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 2296 Stücke: Lieferzeit 10-14 Tag (e) |
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18N10 | Hersteller : GOFORD Semiconductor |
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auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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18N10 | Hersteller : Goford Semiconductor |
![]() Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 (DPAK) Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V FET Feature: Standard Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
Produkt ist nicht verfügbar |
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