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15KPA150CAe3/TR13 Microsemi Corporation


131867-rf01131 Hersteller: Microsemi Corporation
Description: TVS DIODE 150VWM 241.9VC R6
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Technische Details 15KPA150CAe3/TR13 Microsemi Corporation

Category: Bidirectional TVS THT diodes, Description: Diode: TVS; 167.6÷183.5V; 62.4A; bidirectional; ±5%; P600; 15kW, Mounting: THT, Peak pulse power dissipation: 15kW, Case: P600, Tolerance: ±5%, Max. off-state voltage: 150V, Semiconductor structure: bidirectional, Max. forward impulse current: 62.4A, Breakdown voltage: 167.6...183.5V, Leakage current: 2µA, Type of diode: TVS, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote 15KPA150CAe3/TR13

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15KPA150CAe3/TR13 Hersteller : MICROCHIP TECHNOLOGY 131867-rf01131 Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 167.6÷183.5V; 62.4A; bidirectional; ±5%; P600; 15kW
Mounting: THT
Peak pulse power dissipation: 15kW
Case: P600
Tolerance: ±5%
Max. off-state voltage: 150V
Semiconductor structure: bidirectional
Max. forward impulse current: 62.4A
Breakdown voltage: 167.6...183.5V
Leakage current: 2µA
Type of diode: TVS
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
15KPA150CAe3/TR13 15KPA150CAe3/TR13 Hersteller : Microsemi RF01131-837726.pdf ESD Suppressors / TVS Diodes Bi-Directional TVS
Produkt ist nicht verfügbar
15KPA150CAe3/TR13 Hersteller : MICROCHIP TECHNOLOGY 131867-rf01131 Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 167.6÷183.5V; 62.4A; bidirectional; ±5%; P600; 15kW
Mounting: THT
Peak pulse power dissipation: 15kW
Case: P600
Tolerance: ±5%
Max. off-state voltage: 150V
Semiconductor structure: bidirectional
Max. forward impulse current: 62.4A
Breakdown voltage: 167.6...183.5V
Leakage current: 2µA
Type of diode: TVS
Produkt ist nicht verfügbar