| Foto | Bezeichnung | Hersteller | Beschreibung |
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NCS20092DMR2G | onsemi |
 Description: IC OPAMP GP 2 CIRCUIT 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 23µA (x2 Channels) Slew Rate: 0.15V/µs Gain Bandwidth Product: 350 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 500 µV Supplier Device Package: 8-MSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 8.5 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V |
auf Bestellung 571 Stücke: Lieferzeit 10-14 Tag (e) |
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NIS1161MTTAG | onsemi |
Description: TVS DIODE 5VWM 26VC 6WDFN Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: HDMI Capacitance @ Frequency: 0.65pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: 6-WDFN (2x2) Unidirectional Channels: 2 Voltage - Breakdown (Min): 16.5V Voltage - Clamping (Max) @ Ipp: 26V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 94910 Stücke: Lieferzeit 10-14 Tag (e) |
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NSR2030QMUTAG | onsemi |
Description: BRIDGE RECT 1PHASE 30V 2A 4UDFN Packaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: 125°C (TJ) Technology: Schottky Supplier Device Package: 4-UDFN (3.5x3.5) Voltage - Peak Reverse (Max): 30 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Current - Reverse Leakage @ Vr: 20 µA @ 30 V |
Produkt ist nicht verfügbar |
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NTMFS5C456NLT1G | onsemi |
Description: MOSFET N-CH 40V 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
auf Bestellung 2994 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS5C460NLT1G | onsemi |
Description: MOSFET N-CH 40V 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V |
auf Bestellung 8692 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS5C468NLT1G | onsemi |
Description: MOSFET N-CH 40V 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V Power Dissipation (Max): 3.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 20 V |
auf Bestellung 1872 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS5C628NLT1G | onsemi |
Description: MOSFET N-CH 60V 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 135µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V |
auf Bestellung 17362 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS5C673NLT1G | onsemi |
Description: MOSFET N-CH 60V 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 2V @ 35µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP1361EABAYSNT1G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V Supplier Device Package: 6-TSOP Fault Protection: Current Limiting, Over Voltage, Short Circuit Voltage - Start Up: 18 V Part Status: Active Power (Watts): 20 W |
auf Bestellung 2917 Stücke: Lieferzeit 10-14 Tag (e) |
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ECH8659-TL-W | onsemi |
Description: MOSFET 2N-CH 30V 7A ECH8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V FET Feature: Logic Level Gate, 4V Drive Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: SOT-28FL/ECH8 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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SCH1439-TL-W | onsemi |
Description: MOSFET N-CH 30V 3.5A SOT563/SCH6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 1.5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: SOT-563/SCH6 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V |
Produkt ist nicht verfügbar |
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SCH1433-TL-W | onsemi |
Description: MOSFET N-CH 20V 3.5A SOT563/SCH6 |
Produkt ist nicht verfügbar |
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SCH1332-TL-W | onsemi |
Description: MOSFET P-CH 20V 2.5A SOT563/SCH6 |
Produkt ist nicht verfügbar |
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SCH1436-TL-W | onsemi |
Description: MOSFET N-CH 30V 1.8A SOT563/SCH6 |
Produkt ist nicht verfügbar |
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SCH1330-TL-W | onsemi |
Description: MOSFET P-CH 20V 1.5A SOT563/SCH6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 241mOhm @ 750mA, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 1mA Supplier Device Package: SOT-563/SCH6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V |
Produkt ist nicht verfügbar |
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CPH6443-TL-W | onsemi | Description: MOSFET N-CH 35V 6A 6CPH |
auf Bestellung 47 Stücke: Lieferzeit 10-14 Tag (e) |
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MCH3382-TL-W | onsemi |
Description: MOSFET P-CH 12V 2A SC70FL/MCPH3 Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 1mA Supplier Device Package: SC-70FL/MCPH3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±9V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 6 V |
Produkt ist nicht verfügbar |
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NCS211SQT2G | onsemi |
Description: IC OPAMP ZERO-DRIFT 1 CIRC SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Zero-Drift Operating Temperature: -40°C ~ 125°C Current - Supply: 65µA Slew Rate: 0.4V/µs Current - Input Bias: 60 µA Voltage - Input Offset: 0.55 µV Supplier Device Package: SC-88/SC70-6/SOT-363 Number of Circuits: 1 -3db Bandwidth: 25 kHz Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 26 V |
Produkt ist nicht verfügbar |
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NCP134AMX100TCG | onsemi |
Description: IC REG LINEAR 1V 500MA 4XDFN Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1.2x1.2) Voltage - Output (Min/Fixed): 1V Control Features: Enable Part Status: Obsolete PSRR: 80dB ~ 70dB (1kHz) Voltage Dropout (Max): 0.25V @ 500mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
auf Bestellung 343 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP134AMX120TCG | onsemi |
Description: IC REG LINEAR 1.2V 500MA 4XDFN Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1.2x1.2) Voltage - Output (Min/Fixed): 1.2V Control Features: Enable PSRR: 80dB ~ 70dB (1kHz) Voltage Dropout (Max): 0.25V @ 500mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
auf Bestellung 9997 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP170AXV310T2G | onsemi |
Description: IC REG LIN 3.1V 150MA SOT563-6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 900 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SOT-563 Voltage - Output (Min/Fixed): 3.1V Control Features: Enable Protection Features: Over Current, Over Temperature |
auf Bestellung 19 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP170BXV310T2G | onsemi |
Description: IC REG LIN 3.1V 150MA SOT563-6 |
auf Bestellung 53532 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP177AMX120TCG | onsemi |
Description: IC REG LINEAR 1.2V 500MA 4XDFN Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 90 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 1.2V Control Features: Enable PSRR: 75dB (1kHz) Protection Features: Over Current, Over Temperature |
auf Bestellung 40949 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP177AMX180TCG | onsemi |
Description: IC REG LINEAR 1.8V 500MA 4XDFN Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 90 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.285V @ 500mA Protection Features: Over Current, Over Temperature |
auf Bestellung 10492 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP177AMX330TCG | onsemi |
Description: IC REG LINEAR 3.3V 500MA 4XDFN Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 90 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.175V @ 500mA Protection Features: Over Current, Over Temperature |
auf Bestellung 4633 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP720BMT180TBG | onsemi |
Description: IC REG LINEAR 1.8V 350MA 6WDFN |
auf Bestellung 2984 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV8170AXV310T2G | onsemi |
Description: IC REG LINEAR 3.1V 150MA SOT563 |
auf Bestellung 3339 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123W | onsemi |
Description: MOSFET N-CH 100V 170MA SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 71 pF @ 25 V |
Produkt ist nicht verfügbar |
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FCB070N65S3 | onsemi |
Description: MOSFET N-CH 650V 44A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 22A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4.4mA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V |
Produkt ist nicht verfügbar |
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FOD8342R2 | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 6SOP Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.268", 6.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2.5A, 2.5A Voltage - Isolation: 5000Vrms Approval Agency: UR Supplier Device Package: 6-SOP Rise / Fall Time (Typ): 38ns, 24ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Pulse Width Distortion (Max): 65ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 30V |
Produkt ist nicht verfügbar |
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FOD8342TR2 | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 6SOP Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.268", 6.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2.5A, 2.5A Voltage - Isolation: 5000Vrms Approval Agency: UR Supplier Device Package: 6-SOP Rise / Fall Time (Typ): 38ns, 24ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Pulse Width Distortion (Max): 65ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 30V |
auf Bestellung 4237000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMD8530 | onsemi |
Description: MOSFET 2N-CH 30V 35A |
Produkt ist nicht verfügbar |
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FDB0165N807L | onsemi |
Description: MOSFET N-CH 80V 310A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 36A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 304 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23660 pF @ 40 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB0630N1507L | onsemi |
Description: MOSFET N-CH 150V 130A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 18A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9895 pF @ 75 V |
auf Bestellung 78400 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN23SV20MAMPX | onsemi |
Description: IC REG BUCK ADJ 20A 34QFN Packaging: Tape & Reel (TR) Package / Case: 34-PowerTFQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 20A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 200kHz ~ 1MHz Voltage - Input (Max): 18V Topology: Buck Supplier Device Package: 34-PQFN (5.5x5) Synchronous Rectifier: Yes Voltage - Output (Max): 5.5V Voltage - Input (Min): 7V Voltage - Output (Min/Fixed): 0.6V |
Produkt ist nicht verfügbar |
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FDMD8240L | onsemi |
Description: MOSFET 2N-CH 40V 23A Packaging: Tape & Reel (TR) Package / Case: 12-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 23A Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 23A, 10V Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 12-Power3.3x5 Part Status: Active |
Produkt ist nicht verfügbar |
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BSS123W | onsemi |
Description: MOSFET N-CH 100V 170MA SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 71 pF @ 25 V |
Produkt ist nicht verfügbar |
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FCB070N65S3 | onsemi |
Description: MOSFET N-CH 650V 44A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 22A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4.4mA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V |
Produkt ist nicht verfügbar |
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FOD8342R2 | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 6SOP Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.268", 6.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2.5A, 2.5A Voltage - Isolation: 5000Vrms Approval Agency: UR Supplier Device Package: 6-SOP Rise / Fall Time (Typ): 38ns, 24ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Pulse Width Distortion (Max): 65ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 30V |
auf Bestellung 305 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD8342TR2 | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 6SOP Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.268", 6.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2.5A, 2.5A Voltage - Isolation: 5000Vrms Approval Agency: UR Supplier Device Package: 6-SOP Rise / Fall Time (Typ): 38ns, 24ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Pulse Width Distortion (Max): 65ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 30V |
auf Bestellung 4237690 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMD8530 | onsemi |
Description: MOSFET 2N-CH 30V 35A |
Produkt ist nicht verfügbar |
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FDB0165N807L | onsemi |
Description: MOSFET N-CH 80V 310A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 36A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 304 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23660 pF @ 40 V |
auf Bestellung 3230 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB0630N1507L | onsemi |
Description: MOSFET N-CH 150V 130A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 18A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9895 pF @ 75 V |
auf Bestellung 79324 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN23SV20MAMPX | onsemi |
Description: IC REG BUCK ADJ 20A 34QFN Packaging: Cut Tape (CT) Package / Case: 34-PowerTFQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 20A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 200kHz ~ 1MHz Voltage - Input (Max): 18V Topology: Buck Supplier Device Package: 34-PQFN (5.5x5) Synchronous Rectifier: Yes Voltage - Output (Max): 5.5V Voltage - Input (Min): 7V Voltage - Output (Min/Fixed): 0.6V |
Produkt ist nicht verfügbar |
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FDMD8240L | onsemi |
Description: MOSFET 2N-CH 40V 23A Packaging: Cut Tape (CT) Package / Case: 12-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 23A Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 23A, 10V Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 12-Power3.3x5 Part Status: Active |
auf Bestellung 6002 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF067N65S3 | onsemi |
Description: MOSFET N-CH 650V 44A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 22A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4.4mA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V |
auf Bestellung 828 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD8342 | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 6SOP Packaging: Tube Package / Case: 6-SOIC (0.268", 6.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2.5A, 2.5A Voltage - Isolation: 5000Vrms Approval Agency: UR Supplier Device Package: 6-SOP Rise / Fall Time (Typ): 38ns, 24ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Pulse Width Distortion (Max): 65ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 30V |
auf Bestellung 1953 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD8342T | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 6SOP Packaging: Tube Package / Case: 6-SOIC (0.268", 6.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2.5A, 2.5A Voltage - Isolation: 5000Vrms Approval Agency: UR Supplier Device Package: 6-SOP Rise / Fall Time (Typ): 38ns, 24ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Pulse Width Distortion (Max): 65ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 30V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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LC75343M-TLM-E | onsemi |
Description: IC VOLUME CONTROL 36MFPSDJ |
Produkt ist nicht verfügbar |
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SLV74HC4538ADR2G | onsemi |
Description: IC MULTIVIBRTR DUAL MONO Packaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Monostable Operating Temperature: -55°C ~ 125°C Propagation Delay: 30 ns Independent Circuits: 2 Current - Output High, Low: 5.2mA, 5.2mA Schmitt Trigger Input: Yes Supplier Device Package: 16-SOIC Part Status: Obsolete Voltage - Supply: 2 V ~ 6 V |
Produkt ist nicht verfügbar |
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MUN5230T1G | onsemi |
Description: TRANS PREBIAS NPN 50V SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
auf Bestellung 29129 Stücke: Lieferzeit 10-14 Tag (e) |
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| CAT4238AGEVB | onsemi |
Description: BOARD EVALUATION DPP CAT4238A |
Produkt ist nicht verfügbar |
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FAN23SV70AMPX | onsemi |
Description: IC REG BUCK ADJ 20A 34QFN Packaging: Tape & Reel (TR) Package / Case: 34-PowerTFQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 20A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 200kHz ~ 1MHz Voltage - Input (Max): 24V Topology: Buck Supplier Device Package: 34-PQFN (5.5x5) Synchronous Rectifier: Yes Voltage - Output (Max): 5.5V Voltage - Input (Min): 7V Voltage - Output (Min/Fixed): 0.6V Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
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FDB0105N407L | onsemi |
Description: MOSFET N-CH 40V 460A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 460A (Tc) Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 291 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23100 pF @ 20 V |
Produkt ist nicht verfügbar |
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FGD5T120SH | onsemi |
Description: IGBT 1200V 5A FS3 DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 5A Supplier Device Package: TO-252AA IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 4.8ns/24.8ns Switching Energy: 247µJ (on), 94µJ (off) Test Condition: 600V, 5A, 30Ohm, 15V Gate Charge: 6.7 nC Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 12.5 A Power - Max: 69 W |
Produkt ist nicht verfügbar |
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S110FA | onsemi |
Description: DIODE SCHOTTKY 100V 1A SOD123FA Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V Qualification: AEC-Q101 |
auf Bestellung 15929 Stücke: Lieferzeit 10-14 Tag (e) |
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S110FP | onsemi |
Description: DIODE SCHOTTKY 100V 1A SOD123HE Packaging: Tape & Reel (TR) Package / Case: SOD-123H Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 32pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 100 V Qualification: AEC-Q101 |
auf Bestellung 186000 Stücke: Lieferzeit 10-14 Tag (e) |
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S115FA | onsemi |
Description: DIODE SCHOTTKY 150V 1A SOD123FA Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123FA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 150 V Qualification: AEC-Q101 |
auf Bestellung 228000 Stücke: Lieferzeit 10-14 Tag (e) |
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S115FP | onsemi |
Description: DIODE SCHOTTKY 150V 1A SOD123HE Packaging: Tape & Reel (TR) Package / Case: SOD-123H Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 32pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 150 V Qualification: AEC-Q101 |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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S210FA | onsemi |
Description: DIODE SCHOTTKY 100V 2A SOD123FA Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 120pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123FA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V Qualification: AEC-Q101 |
auf Bestellung 57000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NCS20092DMR2G |
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Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA (x2 Channels)
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA (x2 Channels)
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 571 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 1.95 EUR |
| 11+ | 1.75 EUR |
| 25+ | 1.66 EUR |
| 100+ | 1.28 EUR |
| 250+ | 1.13 EUR |
| 500+ | 1.07 EUR |
| NIS1161MTTAG |
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Hersteller: onsemi
Description: TVS DIODE 5VWM 26VC 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.65pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 6-WDFN (2x2)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 16.5V
Voltage - Clamping (Max) @ Ipp: 26V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 26VC 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.65pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: 6-WDFN (2x2)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 16.5V
Voltage - Clamping (Max) @ Ipp: 26V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 94910 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 2.45 EUR |
| 10+ | 1.99 EUR |
| 100+ | 1.55 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.07 EUR |
| NSR2030QMUTAG |
|
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 30V 2A 4UDFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: 125°C (TJ)
Technology: Schottky
Supplier Device Package: 4-UDFN (3.5x3.5)
Voltage - Peak Reverse (Max): 30 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
Description: BRIDGE RECT 1PHASE 30V 2A 4UDFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: 125°C (TJ)
Technology: Schottky
Supplier Device Package: 4-UDFN (3.5x3.5)
Voltage - Peak Reverse (Max): 30 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 20 µA @ 30 V
Produkt ist nicht verfügbar
| NTMFS5C456NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 40V 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 2994 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 1.53 EUR |
| 14+ | 1.33 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.77 EUR |
| NTMFS5C460NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Description: MOSFET N-CH 40V 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
auf Bestellung 8692 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 1.43 EUR |
| 15+ | 1.23 EUR |
| 100+ | 0.85 EUR |
| 500+ | 0.71 EUR |
| NTMFS5C468NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 20 V
Description: MOSFET N-CH 40V 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 20 V
auf Bestellung 1872 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 19+ | 0.93 EUR |
| 22+ | 0.82 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.47 EUR |
| NTMFS5C628NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Description: MOSFET N-CH 60V 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 17362 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 2.57 EUR |
| 10+ | 2.14 EUR |
| 100+ | 1.7 EUR |
| 500+ | 1.44 EUR |
| NTMFS5C673NLT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 35µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Description: MOSFET N-CH 60V 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 25A, 10V
Power Dissipation (Max): 3.6W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 35µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 3.54 EUR |
| 10+ | 2.94 EUR |
| 100+ | 2.34 EUR |
| 500+ | 1.98 EUR |
| NCP1361EABAYSNT1G |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Supplier Device Package: 6-TSOP
Fault Protection: Current Limiting, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 20 W
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Supplier Device Package: 6-TSOP
Fault Protection: Current Limiting, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 20 W
auf Bestellung 2917 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 1.69 EUR |
| 12+ | 1.51 EUR |
| 25+ | 1.44 EUR |
| 100+ | 1.1 EUR |
| 250+ | 0.98 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.72 EUR |
| ECH8659-TL-W |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 7A ECH8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-28FL/ECH8
Part Status: Obsolete
Description: MOSFET 2N-CH 30V 7A ECH8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-28FL/ECH8
Part Status: Obsolete
Produkt ist nicht verfügbar
| SCH1439-TL-W |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 3.5A SOT563/SCH6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 1.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-563/SCH6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Description: MOSFET N-CH 30V 3.5A SOT563/SCH6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 1.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-563/SCH6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Produkt ist nicht verfügbar
| SCH1433-TL-W |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 3.5A SOT563/SCH6
Description: MOSFET N-CH 20V 3.5A SOT563/SCH6
Produkt ist nicht verfügbar
| SCH1332-TL-W |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 2.5A SOT563/SCH6
Description: MOSFET P-CH 20V 2.5A SOT563/SCH6
Produkt ist nicht verfügbar
| SCH1436-TL-W |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 1.8A SOT563/SCH6
Description: MOSFET N-CH 30V 1.8A SOT563/SCH6
Produkt ist nicht verfügbar
| SCH1330-TL-W |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 1.5A SOT563/SCH6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 241mOhm @ 750mA, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 1mA
Supplier Device Package: SOT-563/SCH6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
Description: MOSFET P-CH 20V 1.5A SOT563/SCH6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 241mOhm @ 750mA, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 1mA
Supplier Device Package: SOT-563/SCH6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
Produkt ist nicht verfügbar
| CPH6443-TL-W |
Hersteller: onsemi
Description: MOSFET N-CH 35V 6A 6CPH
Description: MOSFET N-CH 35V 6A 6CPH
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 23+ | 0.77 EUR |
| 27+ | 0.67 EUR |
| MCH3382-TL-W |
|
Hersteller: onsemi
Description: MOSFET P-CH 12V 2A SC70FL/MCPH3
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 1mA
Supplier Device Package: SC-70FL/MCPH3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±9V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 6 V
Description: MOSFET P-CH 12V 2A SC70FL/MCPH3
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 198mOhm @ 1A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 1mA
Supplier Device Package: SC-70FL/MCPH3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±9V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 6 V
Produkt ist nicht verfügbar
| NCS211SQT2G |
|
Hersteller: onsemi
Description: IC OPAMP ZERO-DRIFT 1 CIRC SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 65µA
Slew Rate: 0.4V/µs
Current - Input Bias: 60 µA
Voltage - Input Offset: 0.55 µV
Supplier Device Package: SC-88/SC70-6/SOT-363
Number of Circuits: 1
-3db Bandwidth: 25 kHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 26 V
Description: IC OPAMP ZERO-DRIFT 1 CIRC SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 125°C
Current - Supply: 65µA
Slew Rate: 0.4V/µs
Current - Input Bias: 60 µA
Voltage - Input Offset: 0.55 µV
Supplier Device Package: SC-88/SC70-6/SOT-363
Number of Circuits: 1
-3db Bandwidth: 25 kHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 26 V
Produkt ist nicht verfügbar
| NCP134AMX100TCG |
|
Hersteller: onsemi
Description: IC REG LINEAR 1V 500MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Obsolete
PSRR: 80dB ~ 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 1V 500MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Obsolete
PSRR: 80dB ~ 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
auf Bestellung 343 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 19+ | 0.93 EUR |
| 23+ | 0.79 EUR |
| 25+ | 0.74 EUR |
| 100+ | 0.59 EUR |
| 250+ | 0.55 EUR |
| NCP134AMX120TCG |
|
Hersteller: onsemi
Description: IC REG LINEAR 1.2V 500MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 80dB ~ 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 1.2V 500MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 80dB ~ 70dB (1kHz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
auf Bestellung 9997 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 0.7 EUR |
| 32+ | 0.56 EUR |
| 34+ | 0.52 EUR |
| 100+ | 0.35 EUR |
| 250+ | 0.29 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.2 EUR |
| 2500+ | 0.19 EUR |
| NCP170AXV310T2G |
|
Hersteller: onsemi
Description: IC REG LIN 3.1V 150MA SOT563-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 900 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-563
Voltage - Output (Min/Fixed): 3.1V
Control Features: Enable
Protection Features: Over Current, Over Temperature
Description: IC REG LIN 3.1V 150MA SOT563-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 900 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SOT-563
Voltage - Output (Min/Fixed): 3.1V
Control Features: Enable
Protection Features: Over Current, Over Temperature
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)| NCP170BXV310T2G |
|
Hersteller: onsemi
Description: IC REG LIN 3.1V 150MA SOT563-6
Description: IC REG LIN 3.1V 150MA SOT563-6
auf Bestellung 53532 Stücke:
Lieferzeit 10-14 Tag (e)| NCP177AMX120TCG |
|
Hersteller: onsemi
Description: IC REG LINEAR 1.2V 500MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.2V 500MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 40949 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 22+ | 0.83 EUR |
| 29+ | 0.62 EUR |
| 32+ | 0.56 EUR |
| 100+ | 0.3 EUR |
| 250+ | 0.29 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.2 EUR |
| 2500+ | 0.18 EUR |
| NCP177AMX180TCG |
|
Hersteller: onsemi
Description: IC REG LINEAR 1.8V 500MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.285V @ 500mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.8V 500MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.285V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 10492 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 1.76 EUR |
| 12+ | 1.57 EUR |
| 25+ | 1.49 EUR |
| 100+ | 1.15 EUR |
| 250+ | 1.01 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.75 EUR |
| NCP177AMX330TCG |
|
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 500MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.175V @ 500mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3.3V 500MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.175V @ 500mA
Protection Features: Over Current, Over Temperature
auf Bestellung 4633 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 0.76 EUR |
| 31+ | 0.57 EUR |
| 35+ | 0.51 EUR |
| 100+ | 0.28 EUR |
| 250+ | 0.27 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.19 EUR |
| 2500+ | 0.17 EUR |
| NCP720BMT180TBG |
|
Hersteller: onsemi
Description: IC REG LINEAR 1.8V 350MA 6WDFN
Description: IC REG LINEAR 1.8V 350MA 6WDFN
auf Bestellung 2984 Stücke:
Lieferzeit 10-14 Tag (e)| NCV8170AXV310T2G |
|
Hersteller: onsemi
Description: IC REG LINEAR 3.1V 150MA SOT563
Description: IC REG LINEAR 3.1V 150MA SOT563
auf Bestellung 3339 Stücke:
Lieferzeit 10-14 Tag (e)| BSS123W |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 170MA SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 71 pF @ 25 V
Description: MOSFET N-CH 100V 170MA SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 71 pF @ 25 V
Produkt ist nicht verfügbar
| FCB070N65S3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 44A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 22A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
Description: MOSFET N-CH 650V 44A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 22A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
Produkt ist nicht verfügbar
| FOD8342R2 |
|
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UR
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UR
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Produkt ist nicht verfügbar
| FOD8342TR2 |
|
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UR
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UR
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 4237000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 1.19 EUR |
| 2000+ | 1.12 EUR |
| 5000+ | 1.1 EUR |
| 10000+ | 1.08 EUR |
| FDB0165N807L |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 310A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 36A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 304 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23660 pF @ 40 V
Description: MOSFET N-CH 80V 310A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 36A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 304 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23660 pF @ 40 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 8.21 EUR |
| 1600+ | 7.39 EUR |
| FDB0630N1507L |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 130A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9895 pF @ 75 V
Description: MOSFET N-CH 150V 130A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9895 pF @ 75 V
auf Bestellung 78400 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 6.61 EUR |
| 1600+ | 5.95 EUR |
| 2400+ | 5.57 EUR |
| FAN23SV20MAMPX |
|
Hersteller: onsemi
Description: IC REG BUCK ADJ 20A 34QFN
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerTFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 20A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1MHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 34-PQFN (5.5x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 0.6V
Description: IC REG BUCK ADJ 20A 34QFN
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerTFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 20A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1MHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 34-PQFN (5.5x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 0.6V
Produkt ist nicht verfügbar
| FDMD8240L |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 23A
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 23A, 10V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 12-Power3.3x5
Part Status: Active
Description: MOSFET 2N-CH 40V 23A
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 23A, 10V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 12-Power3.3x5
Part Status: Active
Produkt ist nicht verfügbar
| BSS123W |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 170MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 71 pF @ 25 V
Description: MOSFET N-CH 100V 170MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 71 pF @ 25 V
Produkt ist nicht verfügbar
| FCB070N65S3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 44A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 22A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
Description: MOSFET N-CH 650V 44A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 22A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
Produkt ist nicht verfügbar
| FOD8342R2 |
|
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 6SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UR
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UR
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 305 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.45 EUR |
| 10+ | 2.96 EUR |
| 100+ | 2.28 EUR |
| FOD8342TR2 |
|
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 6SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UR
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UR
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 4237690 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 2.97 EUR |
| 10+ | 1.99 EUR |
| 100+ | 1.53 EUR |
| 500+ | 1.38 EUR |
| FDB0165N807L |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 310A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 36A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 304 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23660 pF @ 40 V
Description: MOSFET N-CH 80V 310A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 36A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 304 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23660 pF @ 40 V
auf Bestellung 3230 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 13.01 EUR |
| 10+ | 11.16 EUR |
| 100+ | 9.3 EUR |
| FDB0630N1507L |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 130A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9895 pF @ 75 V
Description: MOSFET N-CH 150V 130A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 18A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9895 pF @ 75 V
auf Bestellung 79324 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 10.49 EUR |
| 10+ | 8.99 EUR |
| 100+ | 7.49 EUR |
| FAN23SV20MAMPX |
|
Hersteller: onsemi
Description: IC REG BUCK ADJ 20A 34QFN
Packaging: Cut Tape (CT)
Package / Case: 34-PowerTFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 20A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1MHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 34-PQFN (5.5x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 0.6V
Description: IC REG BUCK ADJ 20A 34QFN
Packaging: Cut Tape (CT)
Package / Case: 34-PowerTFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 20A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1MHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 34-PQFN (5.5x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 0.6V
Produkt ist nicht verfügbar
| FDMD8240L |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 23A
Packaging: Cut Tape (CT)
Package / Case: 12-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 23A, 10V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 12-Power3.3x5
Part Status: Active
Description: MOSFET 2N-CH 40V 23A
Packaging: Cut Tape (CT)
Package / Case: 12-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 23A
Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 20V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 23A, 10V
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 12-Power3.3x5
Part Status: Active
auf Bestellung 6002 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 6.51 EUR |
| 10+ | 5.84 EUR |
| 100+ | 4.79 EUR |
| 500+ | 4.08 EUR |
| 1000+ | 3.44 EUR |
| FCPF067N65S3 |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 44A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 22A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
Description: MOSFET N-CH 650V 44A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 22A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4.4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 400 V
auf Bestellung 828 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 10.84 EUR |
| 50+ | 8.66 EUR |
| 100+ | 7.75 EUR |
| 500+ | 6.83 EUR |
| FOD8342 |
|
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 6SOP
Packaging: Tube
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UR
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SOP
Packaging: Tube
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UR
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 1953 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 5.4 EUR |
| 10+ | 3.6 EUR |
| 100+ | 2.77 EUR |
| 500+ | 2.5 EUR |
| 1000+ | 2.15 EUR |
| FOD8342T |
|
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 6SOP
Packaging: Tube
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UR
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SOP
Packaging: Tube
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UR
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 3.56 EUR |
| 10+ | 2.37 EUR |
| 100+ | 1.82 EUR |
| LC75343M-TLM-E |
|
Hersteller: onsemi
Description: IC VOLUME CONTROL 36MFPSDJ
Description: IC VOLUME CONTROL 36MFPSDJ
Produkt ist nicht verfügbar
| SLV74HC4538ADR2G |
Hersteller: onsemi
Description: IC MULTIVIBRTR DUAL MONO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -55°C ~ 125°C
Propagation Delay: 30 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Voltage - Supply: 2 V ~ 6 V
Description: IC MULTIVIBRTR DUAL MONO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -55°C ~ 125°C
Propagation Delay: 30 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Voltage - Supply: 2 V ~ 6 V
Produkt ist nicht verfügbar
| MUN5230T1G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Description: TRANS PREBIAS NPN 50V SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
auf Bestellung 29129 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 40+ | 0.44 EUR |
| 58+ | 0.31 EUR |
| 118+ | 0.15 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.087 EUR |
| CAT4238AGEVB |
|
Hersteller: onsemi
Description: BOARD EVALUATION DPP CAT4238A
Description: BOARD EVALUATION DPP CAT4238A
Produkt ist nicht verfügbar
| FAN23SV70AMPX |
Hersteller: onsemi
Description: IC REG BUCK ADJ 20A 34QFN
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerTFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 20A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1MHz
Voltage - Input (Max): 24V
Topology: Buck
Supplier Device Package: 34-PQFN (5.5x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Last Time Buy
Description: IC REG BUCK ADJ 20A 34QFN
Packaging: Tape & Reel (TR)
Package / Case: 34-PowerTFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 20A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1MHz
Voltage - Input (Max): 24V
Topology: Buck
Supplier Device Package: 34-PQFN (5.5x5)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 7V
Voltage - Output (Min/Fixed): 0.6V
Part Status: Last Time Buy
Produkt ist nicht verfügbar
| FDB0105N407L |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 460A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 291 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23100 pF @ 20 V
Description: MOSFET N-CH 40V 460A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 291 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23100 pF @ 20 V
Produkt ist nicht verfügbar
| FGD5T120SH |
|
Hersteller: onsemi
Description: IGBT 1200V 5A FS3 DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 5A
Supplier Device Package: TO-252AA
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 4.8ns/24.8ns
Switching Energy: 247µJ (on), 94µJ (off)
Test Condition: 600V, 5A, 30Ohm, 15V
Gate Charge: 6.7 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 12.5 A
Power - Max: 69 W
Description: IGBT 1200V 5A FS3 DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 5A
Supplier Device Package: TO-252AA
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 4.8ns/24.8ns
Switching Energy: 247µJ (on), 94µJ (off)
Test Condition: 600V, 5A, 30Ohm, 15V
Gate Charge: 6.7 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 12.5 A
Power - Max: 69 W
Produkt ist nicht verfügbar
| S110FA |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 1A SOD123FA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 1A SOD123FA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 15929 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.16 EUR |
| 6000+ | 0.15 EUR |
| 9000+ | 0.14 EUR |
| S110FP |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 1A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 1A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 186000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.18 EUR |
| 6000+ | 0.17 EUR |
| 9000+ | 0.15 EUR |
| 75000+ | 0.13 EUR |
| S115FA |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 150V 1A SOD123FA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 1A SOD123FA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 228000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.21 EUR |
| 6000+ | 0.2 EUR |
| 9000+ | 0.18 EUR |
| 75000+ | 0.17 EUR |
| S115FP |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 150V 1A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 1A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.19 EUR |
| 6000+ | 0.18 EUR |
| 9000+ | 0.17 EUR |
| S210FA |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 2A SOD123FA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 2A SOD123FA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.22 EUR |
| 6000+ | 0.21 EUR |
| 9000+ | 0.19 EUR |
| 30000+ | 0.18 EUR |