| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MUR820G | ONSEMI |
  Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A Max. load current: 16A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. forward voltage: 0.975V Heatsink thickness: max. 1.4mm Reverse recovery time: 35ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 936 Stücke: Lieferzeit 7-14 Tag (e) |
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MUR860G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. forward voltage: 1.5V Max. load current: 16A Heatsink thickness: 1.14...1.39mm Reverse recovery time: 50ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 188 Stücke: Lieferzeit 7-14 Tag (e) |
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MUR880EG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 100A; TO220AC; 100ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 8A Max. load current: 16A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 100A Case: TO220AC Max. forward voltage: 1.8V Heatsink thickness: 1.14...1.39mm Reverse recovery time: 100ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 124 Stücke: Lieferzeit 7-14 Tag (e) |
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MURA110T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 30ns; SMA; Ufmax: 0.875V; Ifsm: 50A Mounting: SMD Case: SMA Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: ultrafast switching Max. off-state voltage: 100V Max. forward voltage: 0.875V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 30ns Max. forward impulse current: 50A Anzahl je Verpackung: 5 Stücke |
auf Bestellung 4345 Stücke: Lieferzeit 7-14 Tag (e) |
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MURA120T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.875V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMA Max. forward voltage: 0.875V Max. forward impulse current: 40A Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3430 Stücke: Lieferzeit 7-14 Tag (e) |
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MURA160T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.25V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMA Max. forward voltage: 1.25V Max. forward impulse current: 30A Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
auf Bestellung 4780 Stücke: Lieferzeit 7-14 Tag (e) |
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MURA220T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward voltage: 0.95V Case: SMA Kind of package: reel; tape Max. forward impulse current: 40A Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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MURB1620CTT4G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A x2 Max. load current: 16A Reverse recovery time: 35ns Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Case: D2PAK Max. forward voltage: 0.895V Max. forward impulse current: 100A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MURS120T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 0.875V Max. forward impulse current: 40A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MURS160T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 1.25V Max. forward impulse current: 35A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MURS260T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A Mounting: SMD Load current: 2A Semiconductor structure: single diode Reverse recovery time: 75ns Max. forward impulse current: 35A Kind of package: reel; tape Type of diode: rectifying Case: SMB Features of semiconductor devices: ultrafast switching Max. off-state voltage: 0.6kV Max. forward voltage: 1.45V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4500 Stücke: Lieferzeit 7-14 Tag (e) |
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MURS320T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMC; Ufmax: 0.89V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMC Max. forward voltage: 0.89V Max. forward impulse current: 100A Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2360 Stücke: Lieferzeit 7-14 Tag (e) |
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MURS360T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: ultrafast switching Mounting: SMD Case: SMC Max. off-state voltage: 0.6kV Max. forward voltage: 1.28V Load current: 3A Semiconductor structure: single diode Reverse recovery time: 75ns Max. forward impulse current: 100A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1801 Stücke: Lieferzeit 7-14 Tag (e) |
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| MURS480ET3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A Mounting: SMD Load current: 4A Semiconductor structure: single diode Reverse recovery time: 100ns Max. forward impulse current: 70A Kind of package: reel; tape Type of diode: rectifying Case: SMC Features of semiconductor devices: ultrafast switching Max. off-state voltage: 0.8kV Max. forward voltage: 1.53V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| N01S818HAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 128kx8bit; 1.7÷2.2V; TSSOP8; -40÷85°C; serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.7...2.2V Memory capacity: 1Mb Kind of interface: serial Memory organisation: 128kx8bit Case: TSSOP8 Kind of memory: SRAM Type of integrated circuit: SRAM memory Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| N01S830BAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Operating voltage: 2.5...5.5V Kind of interface: serial Memory: 1Mb SRAM Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx8bit Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| N01S830BAT22IT | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Operating voltage: 2.5...5.5V Kind of interface: serial Memory: 1Mb SRAM Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx8bit Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| N01S830HAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Memory: 1Mb SRAM Case: TSSOP8 Operating voltage: 2.5...5.5V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx8bit Kind of interface: serial Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| N01S830HAT22IT | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Memory: 1Mb SRAM Case: TSSOP8 Operating voltage: 2.5...5.5V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 128kx8bit Kind of interface: serial Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| N24C02UDTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...85°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.6...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| N24C02UVTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.6...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| N24C16UDTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.6÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...85°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.6...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| N24RF16DTPT3G | ONSEMI |
N24RF16DTPT3G Serial EEPROM memories - integ. circ. |
Produkt ist nicht verfügbar |
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| N24RF64DWPT3G | ONSEMI |
N24RF64DWPT3G Serial EEPROM memories - integ. circ. |
Produkt ist nicht verfügbar |
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| N24RF64EDTPT3G | ONSEMI |
N24RF64EDTPT3G Serial EEPROM memories - integ. circ. |
Produkt ist nicht verfügbar |
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| N24S128C4DYT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 1.7÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 128kb EEPROM Interface: I2C Memory organisation: 16kx8bit Clock frequency: 1MHz Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Access time: 3500ns Kind of package: reel; tape Operating voltage: 1.7...5.5V Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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| N24S64BC4DYT3G | ONSEMI |
N24S64BC4DYT3G Serial EEPROM memories - integ. circ. |
Produkt ist nicht verfügbar |
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| N24S64C4DYT3G | ONSEMI |
N24S64C4DYT3G Serial EEPROM memories - integ. circ. |
Produkt ist nicht verfügbar |
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| N25S818HAS21I | ONSEMI |
N25S818HAS21I Serial SRAM memories - integrated circ. |
Produkt ist nicht verfügbar |
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| N25S818HAT21I | ONSEMI |
N25S818HAT21I Serial SRAM memories - integrated circ. |
Produkt ist nicht verfügbar |
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| N25S830HAS22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Memory: 256kb SRAM Case: SOIC8 Operating voltage: 2.7...3.6V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 32kx8bit Kind of interface: serial Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| N25S830HAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Memory: 256kb SRAM Case: TSSOP8 Operating voltage: 2.7...3.6V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 32kx8bit Kind of interface: serial Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| N64S818HAT21I | ONSEMI |
N64S818HAT21I Serial SRAM memories - integrated circ. |
Produkt ist nicht verfügbar |
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| N64S830HAS22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Memory: 64kb SRAM Case: SOIC8 Operating voltage: 2.7...3.6V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 8kx8bit Kind of interface: serial Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| N64S830HAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Memory: 64kb SRAM Case: TSSOP8 Operating voltage: 2.7...3.6V Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory organisation: 8kx8bit Kind of interface: serial Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| N84C161WD45TG | ONSEMI | N84C161WD45TG Serial EEPROM memories - integ. circ. |
Produkt ist nicht verfügbar |
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| N84C162WD25TG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; I2C; 2kx8bit; 2.7÷6V; 400kHz; SOIC8; serial Type of integrated circuit: EEPROM memory Case: SOIC8 Mounting: SMD Operating temperature: -40...85°C Access time: 1000ns Kind of package: reel; tape Interface: I2C Kind of memory: EEPROM Kind of interface: serial Memory capacity: 16kb Clock frequency: 400kHz Operating voltage: 2.7...6V Memory organisation: 2kx8bit |
Produkt ist nicht verfügbar |
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| N84C162WD45TG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; I2C; 2kx8bit; 2.7÷6V; 400kHz; SOIC8; serial Type of integrated circuit: EEPROM memory Case: SOIC8 Mounting: SMD Operating temperature: -40...85°C Access time: 1000ns Kind of package: reel; tape Interface: I2C Kind of memory: EEPROM Kind of interface: serial Memory capacity: 16kb Clock frequency: 400kHz Operating voltage: 2.7...6V Memory organisation: 2kx8bit |
Produkt ist nicht verfügbar |
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| N84C163WD28TG | ONSEMI | N84C163WD28TG Serial EEPROM memories - integ. circ. |
Produkt ist nicht verfügbar |
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| N84C163WD42TG | ONSEMI |
N84C163WD42TG Serial EEPROM memories - integ. circ. |
Produkt ist nicht verfügbar |
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| N84C163WD45TG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 2kx8bit; 2.7÷6V; 400kHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 2kx8bit Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 1000ns Kind of package: reel; tape Operating voltage: 2.7...6V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| N93C66BT3ETAG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: Microwire Memory organisation: 512x8/256x16bit Clock frequency: 4MHz Mounting: SMD Case: TDFN8 Kind of interface: serial Operating temperature: -40...85°C Access time: 250ns Kind of package: reel; tape Operating voltage: 1.7...5.5V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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NB100ELT23LDTG | ONSEMI |
Category: Level translators Description: IC: digital; non-inverting,logic level voltage translator; Ch: 2 Kind of package: tube Manufacturer series: 100ELT Type of integrated circuit: digital Number of channels: 2 Kind of integrated circuit: logic level voltage translator; non-inverting Mounting: SMD Operating temperature: -40...85°C Case: TSSOP8 Number of inputs: 4 Number of outputs: 2 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NB100LVEP91DWG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 3; SMD; SO20-W Kind of package: tube Manufacturer series: 100LVEP Frequency: 2GHz Type of integrated circuit: digital Number of channels: 3 Kind of integrated circuit: logic level voltage translator Mounting: SMD Operating temperature: -40...85°C Case: SO20-W Number of inputs: 6 Number of outputs: 6 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NB100LVEP91MNG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 3; SMD; QFN24 Kind of package: tube Manufacturer series: 100LVEP Frequency: 2GHz Type of integrated circuit: digital Number of channels: 3 Kind of integrated circuit: logic level voltage translator Mounting: SMD Operating temperature: -40...85°C Case: QFN24 Number of inputs: 6 Number of outputs: 6 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NB3L553DG | ONSEMI |
Category: Level translators Description: IC: digital; fanout buffer; Ch: 1; 6VDC; SMD; SO8; -40÷85°C; tube Type of integrated circuit: digital Kind of integrated circuit: fanout buffer Number of channels: 1 Supply voltage: 6V DC Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NB3L553MNR4G | ONSEMI |
Category: Level translators Description: IC: digital; fanout buffer; Ch: 1; 2.375÷5.25VDC; SMD; DFN8 Operating temperature: -40...85°C Kind of package: reel; tape Case: DFN8 Kind of integrated circuit: fanout buffer Number of channels: 1 Mounting: SMD Supply voltage: 2.375...5.25V DC Type of integrated circuit: digital Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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NB3M8302CDR2G | ONSEMI |
Category: Level translators Description: IC: digital; fanout buffer; Ch: 1; CMOS,TTL; 4.6VDC; SMD; SO8; 13mA Type of integrated circuit: digital Mounting: SMD Number of channels: 1 Case: SO8 Quiescent current: 13mA Operating temperature: -40...85°C Kind of package: reel; tape Kind of integrated circuit: fanout buffer Technology: CMOS; TTL Supply voltage: 4.6V DC Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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NB3N2304NZDTR2G | ONSEMI |
Category: Level translators Description: IC: digital; fanout buffer; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: fanout buffer Number of channels: 1 Supply voltage: 3...3.6V DC Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Kind of package: reel; tape Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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NB3N551DR2G | ONSEMI |
Category: Level translators Description: IC: digital; fanout buffer; Ch: 1; CMOS; 3÷5.5VDC; SMD; SO8; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: fanout buffer Number of channels: 1 Technology: CMOS Supply voltage: 3...5.5V DC Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: reel; tape Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| NB3RL02FCT2G | ONSEMI |
NB3RL02FCT2G Level translators |
Produkt ist nicht verfügbar |
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| NB3U23CSQTCG | ONSEMI |
NB3U23CSQTCG Level translators |
Produkt ist nicht verfügbar |
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NB4L16MMNG | ONSEMI |
Category: Level translators Description: IC: digital; buffer,transceiver,translator; Ch: 1; 3.8VDC; SMD Case: QFN16 Mounting: SMD Kind of package: tube Frequency: 5GHz Operating temperature: -40...85°C Type of integrated circuit: digital Kind of integrated circuit: buffer; transceiver; translator Number of channels: 1 Supply voltage: 3.8V DC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NB6L11SMNG | ONSEMI |
NB6L11SMNG Level translators |
Produkt ist nicht verfügbar |
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| NB6N11SMNG | ONSEMI |
NB6N11SMNG Level translators |
Produkt ist nicht verfügbar |
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| NB6N11SMNR2G | ONSEMI |
NB6N11SMNR2G Level translators |
Produkt ist nicht verfügbar |
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| NB6N14SMNR2G | ONSEMI |
NB6N14SMNR2G Level translators |
Produkt ist nicht verfügbar |
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NC7NZ04K8X | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 3; IN: 1; SMD; US8; 1.65÷5.5VDC; -40÷85°C; 10uA Case: US8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Type of integrated circuit: digital Quiescent current: 10µA Number of inputs: 1 Number of channels: triple; 3 Kind of gate: NOT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NC7NZ04L8X | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 3; IN: 1; SMD; MicroPak8; 1.65÷5.5VDC; -40÷85°C Case: MicroPak8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Type of integrated circuit: digital Quiescent current: 10µA Number of inputs: 1 Number of channels: triple; 3 Kind of gate: NOT Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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| NC7NZ14L8X | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 3; IN: 1; SMD; MicroPak8; 1.65÷5.5VDC; -40÷85°C Case: MicroPak8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Type of integrated circuit: digital Quiescent current: 10µA Kind of input: with Schmitt trigger Number of inputs: 1 Number of channels: triple; 3 Kind of gate: NOT Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
| MUR820G | |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Heatsink thickness: max. 1.4mm
Reverse recovery time: 35ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Heatsink thickness: max. 1.4mm
Reverse recovery time: 35ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 936 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 56+ | 1.29 EUR |
| 59+ | 1.22 EUR |
| 70+ | 1.03 EUR |
| 101+ | 0.71 EUR |
| 106+ | 0.67 EUR |
| 1000+ | 0.64 EUR |
| MUR860G | |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.5V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 50ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 100A; TO220AC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.5V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 50ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 188 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 49+ | 1.49 EUR |
| 58+ | 1.24 EUR |
| 84+ | 0.86 EUR |
| 88+ | 0.82 EUR |
| 250+ | 0.8 EUR |
| 500+ | 0.78 EUR |
| MUR880EG |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.8V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 100ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.8V
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 100ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 124 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 50+ | 1.46 EUR |
| 55+ | 1.32 EUR |
| 65+ | 1.1 EUR |
| 72+ | 1 EUR |
| 76+ | 0.94 EUR |
| MURA110T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 30ns; SMA; Ufmax: 0.875V; Ifsm: 50A
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 100V
Max. forward voltage: 0.875V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 30ns
Max. forward impulse current: 50A
Anzahl je Verpackung: 5 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 30ns; SMA; Ufmax: 0.875V; Ifsm: 50A
Mounting: SMD
Case: SMA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 100V
Max. forward voltage: 0.875V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 30ns
Max. forward impulse current: 50A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4345 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 195+ | 0.37 EUR |
| 275+ | 0.26 EUR |
| 360+ | 0.2 EUR |
| 380+ | 0.19 EUR |
| MURA120T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.875V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.875V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3430 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 220+ | 0.33 EUR |
| 350+ | 0.21 EUR |
| 395+ | 0.18 EUR |
| 455+ | 0.16 EUR |
| 480+ | 0.15 EUR |
| MURA160T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.25V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMA; Ufmax: 1.25V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 1.25V
Max. forward impulse current: 30A
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4780 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 185+ | 0.39 EUR |
| 340+ | 0.21 EUR |
| 380+ | 0.19 EUR |
| 445+ | 0.16 EUR |
| 470+ | 0.15 EUR |
| MURA220T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.95V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
Anzahl je Verpackung: 5 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward voltage: 0.95V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| MURB1620CTT4G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Max. load current: 16A
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 0.895V
Max. forward impulse current: 100A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Max. load current: 16A
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 0.895V
Max. forward impulse current: 100A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MURS120T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MURS160T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.25V
Max. forward impulse current: 35A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| MURS260T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A
Mounting: SMD
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMB
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.45V
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A
Mounting: SMD
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMB
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.45V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 143+ | 0.5 EUR |
| 155+ | 0.46 EUR |
| 176+ | 0.41 EUR |
| 210+ | 0.34 EUR |
| 293+ | 0.24 EUR |
| 309+ | 0.23 EUR |
| MURS320T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMC; Ufmax: 0.89V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 0.89V
Max. forward impulse current: 100A
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMC; Ufmax: 0.89V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 0.89V
Max. forward impulse current: 100A
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2360 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 200+ | 0.37 EUR |
| 220+ | 0.33 EUR |
| 285+ | 0.25 EUR |
| 300+ | 0.24 EUR |
| MURS360T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Case: SMC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.28V
Load current: 3A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 100A
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Case: SMC
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.28V
Load current: 3A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 100A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1801 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 109+ | 0.66 EUR |
| 116+ | 0.62 EUR |
| 203+ | 0.35 EUR |
| 214+ | 0.33 EUR |
| MURS480ET3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A
Mounting: SMD
Load current: 4A
Semiconductor structure: single diode
Reverse recovery time: 100ns
Max. forward impulse current: 70A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMC
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.53V
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A
Mounting: SMD
Load current: 4A
Semiconductor structure: single diode
Reverse recovery time: 100ns
Max. forward impulse current: 70A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMC
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.53V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| N01S818HAT22I |
|
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 128kx8bit; 1.7÷2.2V; TSSOP8; -40÷85°C; serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...2.2V
Memory capacity: 1Mb
Kind of interface: serial
Memory organisation: 128kx8bit
Case: TSSOP8
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Anzahl je Verpackung: 1 Stücke
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 128kx8bit; 1.7÷2.2V; TSSOP8; -40÷85°C; serial
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 1.7...2.2V
Memory capacity: 1Mb
Kind of interface: serial
Memory organisation: 128kx8bit
Case: TSSOP8
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| N01S830BAT22I |
|
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Kind of interface: serial
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Anzahl je Verpackung: 1 Stücke
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Kind of interface: serial
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| N01S830BAT22IT |
|
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Kind of interface: serial
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Anzahl je Verpackung: 3000 Stücke
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Kind of interface: serial
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| N01S830HAT22I |
|
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Memory: 1Mb SRAM
Case: TSSOP8
Operating voltage: 2.5...5.5V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Kind of interface: serial
Anzahl je Verpackung: 1 Stücke
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Memory: 1Mb SRAM
Case: TSSOP8
Operating voltage: 2.5...5.5V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Kind of interface: serial
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| N01S830HAT22IT |
|
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Memory: 1Mb SRAM
Case: TSSOP8
Operating voltage: 2.5...5.5V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Kind of interface: serial
Anzahl je Verpackung: 3000 Stücke
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Memory: 1Mb SRAM
Case: TSSOP8
Operating voltage: 2.5...5.5V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 128kx8bit
Kind of interface: serial
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| N24C02UDTG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.6...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.6...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| N24C02UVTG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.6...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.6...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| N24C16UDTG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.6...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2kx8bit; 1.6÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.6...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| N24RF16DTPT3G |
|
Hersteller: ONSEMI
N24RF16DTPT3G Serial EEPROM memories - integ. circ.
N24RF16DTPT3G Serial EEPROM memories - integ. circ.
Produkt ist nicht verfügbar
| N24RF64DWPT3G |
|
Hersteller: ONSEMI
N24RF64DWPT3G Serial EEPROM memories - integ. circ.
N24RF64DWPT3G Serial EEPROM memories - integ. circ.
Produkt ist nicht verfügbar
| N24RF64EDTPT3G |
|
Hersteller: ONSEMI
N24RF64EDTPT3G Serial EEPROM memories - integ. circ.
N24RF64EDTPT3G Serial EEPROM memories - integ. circ.
Produkt ist nicht verfügbar
| N24S128C4DYT3G |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 1.7÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 3500ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 5000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; I2C; 16kx8bit; 1.7÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: I2C
Memory organisation: 16kx8bit
Clock frequency: 1MHz
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 3500ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| N24S64BC4DYT3G |
|
Hersteller: ONSEMI
N24S64BC4DYT3G Serial EEPROM memories - integ. circ.
N24S64BC4DYT3G Serial EEPROM memories - integ. circ.
Produkt ist nicht verfügbar
| N24S64C4DYT3G |
|
Hersteller: ONSEMI
N24S64C4DYT3G Serial EEPROM memories - integ. circ.
N24S64C4DYT3G Serial EEPROM memories - integ. circ.
Produkt ist nicht verfügbar
| N25S818HAS21I |
|
Hersteller: ONSEMI
N25S818HAS21I Serial SRAM memories - integrated circ.
N25S818HAS21I Serial SRAM memories - integrated circ.
Produkt ist nicht verfügbar
| N25S818HAT21I |
|
Hersteller: ONSEMI
N25S818HAT21I Serial SRAM memories - integrated circ.
N25S818HAT21I Serial SRAM memories - integrated circ.
Produkt ist nicht verfügbar
| N25S830HAS22I |
|
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Memory: 256kb SRAM
Case: SOIC8
Operating voltage: 2.7...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Kind of interface: serial
Anzahl je Verpackung: 1 Stücke
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Memory: 256kb SRAM
Case: SOIC8
Operating voltage: 2.7...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Kind of interface: serial
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| N25S830HAT22I |
|
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Memory: 256kb SRAM
Case: TSSOP8
Operating voltage: 2.7...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Kind of interface: serial
Anzahl je Verpackung: 1 Stücke
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Memory: 256kb SRAM
Case: TSSOP8
Operating voltage: 2.7...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 32kx8bit
Kind of interface: serial
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| N64S818HAT21I |
|
Hersteller: ONSEMI
N64S818HAT21I Serial SRAM memories - integrated circ.
N64S818HAT21I Serial SRAM memories - integrated circ.
Produkt ist nicht verfügbar
| N64S830HAS22I |
|
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Memory: 64kb SRAM
Case: SOIC8
Operating voltage: 2.7...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 8kx8bit
Kind of interface: serial
Anzahl je Verpackung: 1 Stücke
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Memory: 64kb SRAM
Case: SOIC8
Operating voltage: 2.7...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 8kx8bit
Kind of interface: serial
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| N64S830HAT22I |
|
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Memory: 64kb SRAM
Case: TSSOP8
Operating voltage: 2.7...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 8kx8bit
Kind of interface: serial
Anzahl je Verpackung: 1 Stücke
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Memory: 64kb SRAM
Case: TSSOP8
Operating voltage: 2.7...3.6V
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory organisation: 8kx8bit
Kind of interface: serial
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| N84C161WD45TG |
Hersteller: ONSEMI
N84C161WD45TG Serial EEPROM memories - integ. circ.
N84C161WD45TG Serial EEPROM memories - integ. circ.
Produkt ist nicht verfügbar
| N84C162WD25TG |
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 2kx8bit; 2.7÷6V; 400kHz; SOIC8; serial
Type of integrated circuit: EEPROM memory
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Access time: 1000ns
Kind of package: reel; tape
Interface: I2C
Kind of memory: EEPROM
Kind of interface: serial
Memory capacity: 16kb
Clock frequency: 400kHz
Operating voltage: 2.7...6V
Memory organisation: 2kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 2kx8bit; 2.7÷6V; 400kHz; SOIC8; serial
Type of integrated circuit: EEPROM memory
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Access time: 1000ns
Kind of package: reel; tape
Interface: I2C
Kind of memory: EEPROM
Kind of interface: serial
Memory capacity: 16kb
Clock frequency: 400kHz
Operating voltage: 2.7...6V
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
| N84C162WD45TG |
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 2kx8bit; 2.7÷6V; 400kHz; SOIC8; serial
Type of integrated circuit: EEPROM memory
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Access time: 1000ns
Kind of package: reel; tape
Interface: I2C
Kind of memory: EEPROM
Kind of interface: serial
Memory capacity: 16kb
Clock frequency: 400kHz
Operating voltage: 2.7...6V
Memory organisation: 2kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 2kx8bit; 2.7÷6V; 400kHz; SOIC8; serial
Type of integrated circuit: EEPROM memory
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Access time: 1000ns
Kind of package: reel; tape
Interface: I2C
Kind of memory: EEPROM
Kind of interface: serial
Memory capacity: 16kb
Clock frequency: 400kHz
Operating voltage: 2.7...6V
Memory organisation: 2kx8bit
Produkt ist nicht verfügbar
| N84C163WD28TG |
Hersteller: ONSEMI
N84C163WD28TG Serial EEPROM memories - integ. circ.
N84C163WD28TG Serial EEPROM memories - integ. circ.
Produkt ist nicht verfügbar
| N84C163WD42TG |
|
Hersteller: ONSEMI
N84C163WD42TG Serial EEPROM memories - integ. circ.
N84C163WD42TG Serial EEPROM memories - integ. circ.
Produkt ist nicht verfügbar
| N84C163WD45TG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 2kx8bit; 2.7÷6V; 400kHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 1000ns
Kind of package: reel; tape
Operating voltage: 2.7...6V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 2kx8bit; 2.7÷6V; 400kHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 2kx8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 1000ns
Kind of package: reel; tape
Operating voltage: 2.7...6V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| N93C66BT3ETAG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 4MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Clock frequency: 4MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 250ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
| NB100ELT23LDTG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 2
Kind of package: tube
Manufacturer series: 100ELT
Type of integrated circuit: digital
Number of channels: 2
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP8
Number of inputs: 4
Number of outputs: 2
Anzahl je Verpackung: 1 Stücke
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 2
Kind of package: tube
Manufacturer series: 100ELT
Type of integrated circuit: digital
Number of channels: 2
Kind of integrated circuit: logic level voltage translator; non-inverting
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP8
Number of inputs: 4
Number of outputs: 2
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NB100LVEP91DWG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; SMD; SO20-W
Kind of package: tube
Manufacturer series: 100LVEP
Frequency: 2GHz
Type of integrated circuit: digital
Number of channels: 3
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
Operating temperature: -40...85°C
Case: SO20-W
Number of inputs: 6
Number of outputs: 6
Anzahl je Verpackung: 1 Stücke
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; SMD; SO20-W
Kind of package: tube
Manufacturer series: 100LVEP
Frequency: 2GHz
Type of integrated circuit: digital
Number of channels: 3
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
Operating temperature: -40...85°C
Case: SO20-W
Number of inputs: 6
Number of outputs: 6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NB100LVEP91MNG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; SMD; QFN24
Kind of package: tube
Manufacturer series: 100LVEP
Frequency: 2GHz
Type of integrated circuit: digital
Number of channels: 3
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
Operating temperature: -40...85°C
Case: QFN24
Number of inputs: 6
Number of outputs: 6
Anzahl je Verpackung: 1 Stücke
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; SMD; QFN24
Kind of package: tube
Manufacturer series: 100LVEP
Frequency: 2GHz
Type of integrated circuit: digital
Number of channels: 3
Kind of integrated circuit: logic level voltage translator
Mounting: SMD
Operating temperature: -40...85°C
Case: QFN24
Number of inputs: 6
Number of outputs: 6
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NB3L553DG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 6VDC; SMD; SO8; -40÷85°C; tube
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Number of channels: 1
Supply voltage: 6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 6VDC; SMD; SO8; -40÷85°C; tube
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Number of channels: 1
Supply voltage: 6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NB3L553MNR4G |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 2.375÷5.25VDC; SMD; DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: fanout buffer
Number of channels: 1
Mounting: SMD
Supply voltage: 2.375...5.25V DC
Type of integrated circuit: digital
Anzahl je Verpackung: 1000 Stücke
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 2.375÷5.25VDC; SMD; DFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: fanout buffer
Number of channels: 1
Mounting: SMD
Supply voltage: 2.375...5.25V DC
Type of integrated circuit: digital
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
| NB3M8302CDR2G |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS,TTL; 4.6VDC; SMD; SO8; 13mA
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 1
Case: SO8
Quiescent current: 13mA
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of integrated circuit: fanout buffer
Technology: CMOS; TTL
Supply voltage: 4.6V DC
Anzahl je Verpackung: 2500 Stücke
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS,TTL; 4.6VDC; SMD; SO8; 13mA
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 1
Case: SO8
Quiescent current: 13mA
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of integrated circuit: fanout buffer
Technology: CMOS; TTL
Supply voltage: 4.6V DC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| NB3N2304NZDTR2G |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Number of channels: 1
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Anzahl je Verpackung: 2500 Stücke
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Number of channels: 1
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: reel; tape
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| NB3N551DR2G |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS; 3÷5.5VDC; SMD; SO8; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Number of channels: 1
Technology: CMOS
Supply voltage: 3...5.5V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Anzahl je Verpackung: 2500 Stücke
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS; 3÷5.5VDC; SMD; SO8; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Number of channels: 1
Technology: CMOS
Supply voltage: 3...5.5V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
| NB4L16MMNG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; buffer,transceiver,translator; Ch: 1; 3.8VDC; SMD
Case: QFN16
Mounting: SMD
Kind of package: tube
Frequency: 5GHz
Operating temperature: -40...85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; transceiver; translator
Number of channels: 1
Supply voltage: 3.8V DC
Anzahl je Verpackung: 1 Stücke
Category: Level translators
Description: IC: digital; buffer,transceiver,translator; Ch: 1; 3.8VDC; SMD
Case: QFN16
Mounting: SMD
Kind of package: tube
Frequency: 5GHz
Operating temperature: -40...85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; transceiver; translator
Number of channels: 1
Supply voltage: 3.8V DC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NC7NZ04K8X |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 3; IN: 1; SMD; US8; 1.65÷5.5VDC; -40÷85°C; 10uA
Case: US8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Quiescent current: 10µA
Number of inputs: 1
Number of channels: triple; 3
Kind of gate: NOT
Anzahl je Verpackung: 1 Stücke
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 3; IN: 1; SMD; US8; 1.65÷5.5VDC; -40÷85°C; 10uA
Case: US8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Quiescent current: 10µA
Number of inputs: 1
Number of channels: triple; 3
Kind of gate: NOT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NC7NZ04L8X |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 3; IN: 1; SMD; MicroPak8; 1.65÷5.5VDC; -40÷85°C
Case: MicroPak8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Quiescent current: 10µA
Number of inputs: 1
Number of channels: triple; 3
Kind of gate: NOT
Anzahl je Verpackung: 5000 Stücke
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 3; IN: 1; SMD; MicroPak8; 1.65÷5.5VDC; -40÷85°C
Case: MicroPak8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Quiescent current: 10µA
Number of inputs: 1
Number of channels: triple; 3
Kind of gate: NOT
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
| NC7NZ14L8X |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 3; IN: 1; SMD; MicroPak8; 1.65÷5.5VDC; -40÷85°C
Case: MicroPak8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Number of inputs: 1
Number of channels: triple; 3
Kind of gate: NOT
Anzahl je Verpackung: 5000 Stücke
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 3; IN: 1; SMD; MicroPak8; 1.65÷5.5VDC; -40÷85°C
Case: MicroPak8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: digital
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Number of inputs: 1
Number of channels: triple; 3
Kind of gate: NOT
Anzahl je Verpackung: 5000 Stücke
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