Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FAN4800IN | onsemi |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C Voltage - Supply: 11V ~ 16.5V Frequency - Switching: 66kHz ~ 84kHz Mode: Continuous Conduction (CCM), Discontinuous Conduction (DCM) Supplier Device Package: 16-PDIP Part Status: Obsolete Current - Startup: 100 µA |
Produkt ist nicht verfügbar |
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FCA47N60 | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V |
auf Bestellung 114 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF11N60F | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V |
auf Bestellung 985 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD6630A | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 7.6A, 10V Power Dissipation (Max): 28W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 462 pF @ 15 V |
Produkt ist nicht verfügbar |
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FDN304PZ | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 10 V |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDN342P | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 10 V |
Produkt ist nicht verfügbar |
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FDS7764S | onsemi |
![]() ![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13.5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 Drain to Source Voltage (Vdss): 30 V |
Produkt ist nicht verfügbar |
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2N3904CBU | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N3904NLBU | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N3904TAR | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
auf Bestellung 22000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N3904TF | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
auf Bestellung 56000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N3905TA | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N3906TA | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N3906TAR | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N3906TF | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
auf Bestellung 89500 Stücke: Lieferzeit 10-14 Tag (e) |
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2N4123TA | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N4123TF | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N4123TFR | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N4124TA | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N4125TA | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N4125TF | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N4126TA | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N4126TF | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N4401TA | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
auf Bestellung 34000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N4401TF | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N4402TA | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N4403NLBU | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N4403TA | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
auf Bestellung 34000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N4403TAR | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
auf Bestellung 16720 Stücke: Lieferzeit 10-14 Tag (e) |
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2N4403TF | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5087TA | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Frequency - Transition: 40MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N5087TF | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Frequency - Transition: 40MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N5087TFR | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Frequency - Transition: 40MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N5089TA | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N5089TF | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N5089TFR | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N5210TFR | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N5401CTA | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N5401CYTA | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N5401NLBU | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N5401TF | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N5401TFR | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N5401YBU | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 625 mW |
auf Bestellung 204288 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TFR | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
auf Bestellung 118000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5551CBU | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N5551CTA | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N6517BU | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 625 mW |
auf Bestellung 18510 Stücke: Lieferzeit 10-14 Tag (e) |
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2N6517CBU | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N6517CTA | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N6517TA | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 625 mW |
auf Bestellung 107464 Stücke: Lieferzeit 10-14 Tag (e) |
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2N6519BU | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N6519TA | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N6520BU | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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74ABT16501CMTDX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 56-TFSOP (0.240", 6.10mm Width) Number of Circuits: 18-Bit Mounting Type: Surface Mount Logic Type: Universal Bus Transceiver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 3mA, 64mA Supplier Device Package: 56-TSSOP |
Produkt ist nicht verfügbar |
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74ABT16543CMTDX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 56-TFSOP (0.240", 6.10mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 32mA, 64mA Supplier Device Package: 56-TSSOP |
Produkt ist nicht verfügbar |
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74ABT16952CMTDX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 56-TFSOP (0.240", 6.10mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 32mA, 64mA Supplier Device Package: 56-TSSOP Part Status: Obsolete |
Produkt ist nicht verfügbar |
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74ABT541CMSAX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-SSOP (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 32mA, 64mA Supplier Device Package: 20-SSOP |
Produkt ist nicht verfügbar |
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74ACT161PC | onsemi |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -40°C ~ 85°C Direction: Up Trigger Type: Positive Edge Timing: Synchronous Supplier Device Package: 16-PDIP Voltage - Supply: 4.5 V ~ 5.5 V Count Rate: 125 MHz Number of Bits per Element: 4 |
Produkt ist nicht verfügbar |
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74ACT16240MTDX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 48-TSSOP Part Status: Obsolete |
Produkt ist nicht verfügbar |
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74ACT175PC | onsemi |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Complementary Mounting Type: Through Hole Number of Elements: 1 Function: Master Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 40 µA Current - Output High, Low: 24mA, 24mA Trigger Type: Positive Edge Clock Frequency: 236 MHz Input Capacitance: 4.5 pF Supplier Device Package: 16-PDIP Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF Part Status: Obsolete Number of Bits per Element: 4 |
Produkt ist nicht verfügbar |
FAN4800IN |
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Hersteller: onsemi
Description: IC PFC CTRLR CCM/DCM 84KHZ 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 16.5V
Frequency - Switching: 66kHz ~ 84kHz
Mode: Continuous Conduction (CCM), Discontinuous Conduction (DCM)
Supplier Device Package: 16-PDIP
Part Status: Obsolete
Current - Startup: 100 µA
Description: IC PFC CTRLR CCM/DCM 84KHZ 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 16.5V
Frequency - Switching: 66kHz ~ 84kHz
Mode: Continuous Conduction (CCM), Discontinuous Conduction (DCM)
Supplier Device Package: 16-PDIP
Part Status: Obsolete
Current - Startup: 100 µA
Produkt ist nicht verfügbar
FCA47N60 |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 114 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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1+ | 17.71 EUR |
30+ | 14.33 EUR |
FCPF11N60F |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 25 V
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.14 EUR |
50+ | 3.27 EUR |
100+ | 2.8 EUR |
500+ | 2.74 EUR |
FDD6630A |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 21A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 7.6A, 10V
Power Dissipation (Max): 28W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 462 pF @ 15 V
Description: MOSFET N-CH 30V 21A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 7.6A, 10V
Power Dissipation (Max): 28W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 462 pF @ 15 V
Produkt ist nicht verfügbar
FDN304PZ |
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Hersteller: onsemi
Description: MOSFET P-CH 20V 2.4A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 10 V
Description: MOSFET P-CH 20V 2.4A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 10 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.33 EUR |
6000+ | 0.32 EUR |
9000+ | 0.29 EUR |
FDN342P |
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Hersteller: onsemi
Description: MOSFET P-CH 20V 2A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 10 V
Description: MOSFET P-CH 20V 2A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 10 V
Produkt ist nicht verfügbar
FDS7764S | ![]() |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 13.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET N-CH 30V 13.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
2N3904CBU |
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Hersteller: onsemi
Description: TRANS NPN 40V 0.2A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS NPN 40V 0.2A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N3904NLBU |
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Hersteller: onsemi
Description: TRANS NPN 40V 0.2A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS NPN 40V 0.2A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N3904TAR |
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Hersteller: onsemi
Description: TRANS NPN 40V 0.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS NPN 40V 0.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
auf Bestellung 22000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.096 EUR |
6000+ | 0.089 EUR |
10000+ | 0.074 EUR |
2N3904TF |
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Hersteller: onsemi
Description: TRANS NPN 40V 0.2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS NPN 40V 0.2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
auf Bestellung 56000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.096 EUR |
6000+ | 0.089 EUR |
10000+ | 0.074 EUR |
50000+ | 0.065 EUR |
2N3905TA |
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Hersteller: onsemi
Description: TRANS PNP 40V 0.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N3906TA |
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Hersteller: onsemi
Description: TRANS PNP 40V 0.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.088 EUR |
6000+ | 0.082 EUR |
10000+ | 0.068 EUR |
2N3906TAR |
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Hersteller: onsemi
Description: TRANS PNP 40V 0.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.093 EUR |
6000+ | 0.086 EUR |
10000+ | 0.071 EUR |
2N3906TF |
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Hersteller: onsemi
Description: TRANS PNP 40V 0.2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
auf Bestellung 89500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.088 EUR |
6000+ | 0.082 EUR |
10000+ | 0.068 EUR |
50000+ | 0.06 EUR |
2N4123TA |
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Hersteller: onsemi
Description: TRANS NPN 30V 0.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS NPN 30V 0.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N4123TF |
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Hersteller: onsemi
Description: TRANS NPN 30V 0.2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS NPN 30V 0.2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N4123TFR |
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Hersteller: onsemi
Description: TRANS NPN 30V 0.2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS NPN 30V 0.2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N4124TA |
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Hersteller: onsemi
Description: TRANS NPN 25V 0.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Description: TRANS NPN 25V 0.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N4125TA |
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Hersteller: onsemi
Description: TRANS PNP 30V 0.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS PNP 30V 0.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N4125TF |
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Hersteller: onsemi
Description: TRANS PNP 30V 0.2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS PNP 30V 0.2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N4126TA |
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Hersteller: onsemi
Description: TRANS PNP 25V 0.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Description: TRANS PNP 25V 0.2A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N4126TF |
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Hersteller: onsemi
Description: TRANS PNP 25V 0.2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Description: TRANS PNP 25V 0.2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N4401TA |
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Hersteller: onsemi
Description: TRANS NPN 40V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS NPN 40V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
auf Bestellung 34000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.067 EUR |
6000+ | 0.062 EUR |
10000+ | 0.054 EUR |
2N4401TF |
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Hersteller: onsemi
Description: TRANS NPN 40V 0.6A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS NPN 40V 0.6A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.096 EUR |
6000+ | 0.089 EUR |
10000+ | 0.074 EUR |
2N4402TA |
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Hersteller: onsemi
Description: TRANS PNP 40V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 2V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N4403NLBU |
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Hersteller: onsemi
Description: TRANS PNP 40V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N4403TA |
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Hersteller: onsemi
Description: TRANS PNP 40V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
auf Bestellung 34000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.1 EUR |
6000+ | 0.094 EUR |
10000+ | 0.078 EUR |
2N4403TAR |
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Hersteller: onsemi
Description: TRANS PNP 40V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
auf Bestellung 16720 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.094 EUR |
6000+ | 0.087 EUR |
10000+ | 0.073 EUR |
2N4403TF |
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Hersteller: onsemi
Description: TRANS PNP 40V 0.6A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: TRANS PNP 40V 0.6A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.094 EUR |
6000+ | 0.087 EUR |
2N5087TA |
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Hersteller: onsemi
Description: TRANS PNP 50V 0.1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Description: TRANS PNP 50V 0.1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N5087TF |
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Hersteller: onsemi
Description: TRANS PNP 50V 0.1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Description: TRANS PNP 50V 0.1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N5087TFR |
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Hersteller: onsemi
Description: TRANS PNP 50V 0.1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Description: TRANS PNP 50V 0.1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N5089TA |
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Hersteller: onsemi
Description: TRANS NPN 25V 0.1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Description: TRANS NPN 25V 0.1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N5089TF |
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Hersteller: onsemi
Description: TRANS NPN 25V 0.1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Description: TRANS NPN 25V 0.1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N5089TFR |
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Hersteller: onsemi
Description: TRANS NPN 25V 0.1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Description: TRANS NPN 25V 0.1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N5210TFR |
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Hersteller: onsemi
Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Description: TRANS NPN 50V 0.1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100µA, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N5401CTA |
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Hersteller: onsemi
Description: TRANS PNP 150V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
Description: TRANS PNP 150V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N5401CYTA |
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Hersteller: onsemi
Description: TRANS PNP 150V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
Description: TRANS PNP 150V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N5401NLBU |
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Hersteller: onsemi
Description: TRANS PNP 150V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
Description: TRANS PNP 150V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N5401TF |
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Hersteller: onsemi
Description: TRANS PNP 150V 0.6A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
Description: TRANS PNP 150V 0.6A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N5401TFR |
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Hersteller: onsemi
Description: TRANS PNP 150V 0.6A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
Description: TRANS PNP 150V 0.6A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N5401YBU |
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Hersteller: onsemi
Description: TRANS PNP 150V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
Description: TRANS PNP 150V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 400MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
auf Bestellung 204288 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
31+ | 0.58 EUR |
45+ | 0.39 EUR |
100+ | 0.19 EUR |
500+ | 0.16 EUR |
1000+ | 0.11 EUR |
2000+ | 0.096 EUR |
5000+ | 0.089 EUR |
10000+ | 0.074 EUR |
50000+ | 0.065 EUR |
2N5550TFR |
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Hersteller: onsemi
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 118000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.069 EUR |
6000+ | 0.064 EUR |
10000+ | 0.055 EUR |
2N5551CBU |
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Hersteller: onsemi
Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N5551CTA |
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Hersteller: onsemi
Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N6517BU |
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Hersteller: onsemi
Description: TRANS NPN 350V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
Description: TRANS NPN 350V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
auf Bestellung 18510 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
39+ | 0.46 EUR |
100+ | 0.23 EUR |
500+ | 0.19 EUR |
1000+ | 0.14 EUR |
2000+ | 0.12 EUR |
5000+ | 0.11 EUR |
10000+ | 0.098 EUR |
2N6517CBU |
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Hersteller: onsemi
Description: TRANS NPN 400V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW
Description: TRANS NPN 400V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N6517CTA |
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Hersteller: onsemi
Description: TRANS NPN 400V 0.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW
Description: TRANS NPN 400V 0.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N6517TA |
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Hersteller: onsemi
Description: TRANS NPN 350V 0.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
Description: TRANS NPN 350V 0.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
auf Bestellung 107464 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.081 EUR |
6000+ | 0.077 EUR |
10000+ | 0.073 EUR |
2N6519BU |
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Hersteller: onsemi
Description: TRANS PNP 300V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
Description: TRANS PNP 300V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N6519TA |
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Hersteller: onsemi
Description: TRANS PNP 300V 0.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
Description: TRANS PNP 300V 0.5A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2N6520BU |
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Hersteller: onsemi
Description: TRANS PNP 350V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
Description: TRANS PNP 350V 0.5A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
74ABT16501CMTDX |
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Hersteller: onsemi
Description: IC UNIV BUS TXRX 18BIT 56TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Number of Circuits: 18-Bit
Mounting Type: Surface Mount
Logic Type: Universal Bus Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 3mA, 64mA
Supplier Device Package: 56-TSSOP
Description: IC UNIV BUS TXRX 18BIT 56TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Number of Circuits: 18-Bit
Mounting Type: Surface Mount
Logic Type: Universal Bus Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 3mA, 64mA
Supplier Device Package: 56-TSSOP
Produkt ist nicht verfügbar
74ABT16543CMTDX |
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Hersteller: onsemi
Description: IC TXRX NON-INVERT 5.5V 56TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 56-TSSOP
Description: IC TXRX NON-INVERT 5.5V 56TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 56-TSSOP
Produkt ist nicht verfügbar
74ABT16952CMTDX |
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Hersteller: onsemi
Description: IC TXRX NON-INVERT 5.5V 56TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 56-TSSOP
Part Status: Obsolete
Description: IC TXRX NON-INVERT 5.5V 56TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 56-TSSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
74ABT541CMSAX |
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Hersteller: onsemi
Description: IC BUFF NON-INVERT 5.5V 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-SSOP
Description: IC BUFF NON-INVERT 5.5V 20SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-SSOP
Produkt ist nicht verfügbar
74ACT161PC |
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Hersteller: onsemi
Description: IC BINARY COUNTER 4-BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-PDIP
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 4
Description: IC BINARY COUNTER 4-BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-PDIP
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 4
Produkt ist nicht verfügbar
74ACT16240MTDX |
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Hersteller: onsemi
Description: IC BUFFER INVERT 5.5V 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
Part Status: Obsolete
Description: IC BUFFER INVERT 5.5V 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
74ACT175PC |
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Hersteller: onsemi
Description: IC FF D-TYPE SNGL 4BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Complementary
Mounting Type: Through Hole
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 236 MHz
Input Capacitance: 4.5 pF
Supplier Device Package: 16-PDIP
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Part Status: Obsolete
Number of Bits per Element: 4
Description: IC FF D-TYPE SNGL 4BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Complementary
Mounting Type: Through Hole
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 236 MHz
Input Capacitance: 4.5 pF
Supplier Device Package: 16-PDIP
Max Propagation Delay @ V, Max CL: 11ns @ 5V, 50pF
Part Status: Obsolete
Number of Bits per Element: 4
Produkt ist nicht verfügbar