| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MMBZ15VDL,215 | NEXPERIA |
 Category: Transil diodes - arraysDescription: Diode: TVS array; 15V; 40W; unidirectional,double,common cathode Type of diode: TVS array Mounting: SMD Case: SOT23 Semiconductor structure: common cathode; double; unidirectional Leakage current: 5nA Features of semiconductor devices: ESD protection Peak pulse power dissipation: 40W Max. off-state voltage: 12V Breakdown voltage: 15V Number of channels: 2 |
auf Bestellung 2730 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBZ18VAL,215 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 18V; 40W; unidirectional,double,common anode Type of diode: TVS array Breakdown voltage: 18V Peak pulse power dissipation: 40W Semiconductor structure: common anode; double; unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 14.5V Features of semiconductor devices: ESD protection Leakage current: 5nA Number of channels: 2 |
Produkt ist nicht verfügbar |
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MMBZ18VCL,215 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 18V; 40W; unidirectional,double,common cathode Type of diode: TVS array Breakdown voltage: 18V Peak pulse power dissipation: 40W Semiconductor structure: common cathode; double; unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 14.5V Features of semiconductor devices: ESD protection Leakage current: 100pA Number of channels: 2 |
Produkt ist nicht verfügbar |
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MMBZ27VCL,215 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 27V; 40W; unidirectional,double,common cathode Type of diode: TVS array Mounting: SMD Case: SOT23 Semiconductor structure: common cathode; double; unidirectional Leakage current: 5nA Features of semiconductor devices: ESD protection Peak pulse power dissipation: 40W Max. off-state voltage: 22V Breakdown voltage: 27V Number of channels: 2 |
auf Bestellung 13305 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBZ27VCL,235 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 27V; 40W; unidirectional,double,common cathode Type of diode: TVS array Mounting: SMD Case: SOT23 Semiconductor structure: common cathode; double; unidirectional Leakage current: 100pA Features of semiconductor devices: ESD protection Peak pulse power dissipation: 40W Max. off-state voltage: 22V Breakdown voltage: 27V Number of channels: 2 |
Produkt ist nicht verfügbar |
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| PSMN5R6-100BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 539A Power dissipation: 306W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 13.22mΩ Mounting: SMD Gate charge: 141nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PSMN5R6-100PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 539A Power dissipation: 306W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: THT Gate charge: 141nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| PSMN7R0-100BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Pulsed drain current: 475A Power dissipation: 269W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 125nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| PMPB16EPX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.7A; Idm: -30A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.7A Pulsed drain current: -30A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±25V On-state resistance: 34mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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| PMPB24EPX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.1A; Idm: -26A Drain-source voltage: -30V Drain current: -4.1A On-state resistance: 43mΩ Type of transistor: P-MOSFET Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 28nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -26A Mounting: SMD Case: DFN2020MD-6; SOT1220 |
Produkt ist nicht verfügbar |
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74HCT7541D,118 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL Operating temperature: -40...125°C Type of integrated circuit: digital Number of channels: 8 Kind of output: 3-state Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of integrated circuit: buffer; line driver; non-inverting Family: HCT Technology: CMOS; TTL Mounting: SMD Case: SO20 Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
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74HCT7541PW,118 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL Operating temperature: -40...125°C Type of integrated circuit: digital Number of channels: 8 Kind of output: 3-state Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of integrated circuit: buffer; line driver; non-inverting Family: HCT Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
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| BC847B | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
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BZV55-C47,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.4/0.5W; 47V; SMD; reel,tape; SOD80C; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.4/0.5W Zener voltage: 47V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD80C Max. load current: 0.25A Semiconductor structure: single diode Leakage current: 50nA |
auf Bestellung 1110 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC4245APW,112 | NEXPERIA |
Category: Level translators Description: IC: digital; bus transceiver,logic level voltage translator Type of integrated circuit: digital Kind of integrated circuit: bus transceiver; logic level voltage translator Number of channels: 8 Technology: CMOS; TTL Supply voltage: 1.5...3.6V DC; 1.5...5.5V DC Mounting: SMD Case: TSSOP24 Operating temperature: -40...125°C Kind of package: tube Integrated circuit features: 5V tolerant on inputs/outputs Quiescent current: 10µA Kind of output: 3-state Family: LVC |
Produkt ist nicht verfügbar |
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| 74LVC1G97GM,132 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; buffer,inverter,multiplexer,Schmitt trigger; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter; multiplexer; Schmitt trigger Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of channels: 1 Number of inputs: 3 Technology: CMOS; TTL Mounting: SMD Case: XSON6 Manufacturer series: Mini Logic Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: LVC |
Produkt ist nicht verfügbar |
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| 74LVC1G97GN,132 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; buffer,inverter,multiplexer,Schmitt trigger; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter; multiplexer; Schmitt trigger Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of channels: 1 Number of inputs: 3 Technology: CMOS; TTL Mounting: SMD Case: XSON6 Manufacturer series: Mini Logic Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: LVC |
Produkt ist nicht verfügbar |
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| 74LVC1G97GS,132 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; buffer,inverter,multiplexer,Schmitt trigger; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter; multiplexer; Schmitt trigger Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of channels: 1 Number of inputs: 3 Technology: CMOS; TTL Mounting: SMD Case: XSON6 Manufacturer series: Mini Logic Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: LVC |
Produkt ist nicht verfügbar |
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| 74LVC1G97GXZ | NEXPERIA |
Category: Gates, inverters Description: IC: digital; buffer,inverter; AND,configurable,NAND,NOR,OR; TTL Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter Kind of gate: AND; configurable; NAND; NOR; OR Technology: TTL Mounting: SMD Case: X2SON6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: LVC |
Produkt ist nicht verfügbar |
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| 74LVC1G98GS,132 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; buffer,inverter; CMOS; SMD; XSON6; Mini Logic; LVC Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Technology: CMOS Mounting: SMD Case: XSON6 Manufacturer series: Mini Logic Supply voltage: 1.65...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: LVC |
Produkt ist nicht verfügbar |
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74LVC595APW,112 | NEXPERIA |
Category: Shift registers Description: IC: digital; shift register,parallel/serial out,serial input Type of integrated circuit: digital Kind of integrated circuit: parallel/serial out; serial input; shift register Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Supply voltage: 1.2...3.6V DC Family: LVC Operating temperature: -40...125°C Kind of package: tube Kind of output: 3-state Integrated circuit features: 5V tolerant on inputs/outputs |
Produkt ist nicht verfügbar |
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| PSMN7R0-30MLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 270A; 57W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 67A Pulsed drain current: 270A Power dissipation: 57W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| PSMN7R0-30YL,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 76A; Idm: 260A; 51W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 76A Pulsed drain current: 260A Power dissipation: 51W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 6.97mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| PSMN7R0-30YLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 61A Pulsed drain current: 245A Power dissipation: 48W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1490 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN7R0-60YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W Case: LFPAK56; PowerSO8; SOT669 Mounting: SMD On-state resistance: 14.7mΩ Kind of package: reel; tape Power dissipation: 117W Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 63A Gate charge: 45nC Drain-source voltage: 60V Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 1459 Stücke: Lieferzeit 14-21 Tag (e) |
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| PSMN7R5-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 36A Pulsed drain current: 202A Power dissipation: 34W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 12.4mΩ Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
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PSMN7R6-60BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 389A; 149W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 65A Pulsed drain current: 389A Power dissipation: 149W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 13.3mΩ Mounting: SMD Gate charge: 38.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PSMN7R6-60PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 92A; Idm: 389A; 149W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 92A Pulsed drain current: 389A Power dissipation: 149W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: THT Gate charge: 38.7nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| PSMNR70-30YLHX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 281A; Idm: 1589A Type of transistor: N-MOSFET Power dissipation: 268W Polarisation: unipolar Kind of package: reel; tape Gate charge: 157nC Technology: NextPowerS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1589A Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Drain-source voltage: 30V Drain current: 281A On-state resistance: 2mΩ |
Produkt ist nicht verfügbar |
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| PSMN027-100BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 148A; 103W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 37A Pulsed drain current: 148A Power dissipation: 103W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 59mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PSMN0R7-25YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 235A; 158W Case: LFPAK56E; PowerSO8; SOT1023 Mounting: SMD On-state resistance: 1.47mΩ Kind of package: reel; tape Power dissipation: 158W Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 235A Gate charge: 110.2nC Drain-source voltage: 25V Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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| PSMN1R7-25YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 152A; Idm: 860A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 25V Drain current: 152A Pulsed drain current: 860A Power dissipation: 135W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.11mΩ Mounting: SMD Gate charge: 46.7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| PESD4V0Z1BSFYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 6.9V; bidirectional; DSN0603-2,SOD962-2 Type of diode: TVS Max. off-state voltage: 4V Breakdown voltage: 6.9V Semiconductor structure: bidirectional Case: DSN0603-2; SOD962-2 Mounting: SMD Leakage current: 50nA Features of semiconductor devices: ESD protection |
Produkt ist nicht verfügbar |
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| PESD3V6Z1BCSFYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 6.8V; bidirectional; DSN0603-2,SOD962-2 Type of diode: TVS Max. off-state voltage: 3.6V Breakdown voltage: 6.8V Semiconductor structure: bidirectional Case: DSN0603-2; SOD962-2 Mounting: SMD Leakage current: 50nA Features of semiconductor devices: ESD protection |
Produkt ist nicht verfügbar |
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PTVS5V5D1BLYL | NEXPERIA |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 5.6÷7.6V; bidirectional; DFN1006-2,SOD882 Type of diode: TVS Max. off-state voltage: 5.5V Breakdown voltage: 5.6...7.6V Semiconductor structure: bidirectional Case: DFN1006-2; SOD882 Mounting: SMD Leakage current: 0.1µA Features of semiconductor devices: ESD protection |
Produkt ist nicht verfügbar |
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PZTA14-QX | NEXPERIA |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 1.25W; SC73,SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 1.25W Case: SC73; SOT223 Pulsed collector current: 0.8A Current gain: 20000 Mounting: SMD Kind of package: reel; tape Frequency: 125MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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NSF040120L3A0Q | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 160A; 313W Mounting: THT Kind of package: tube Power dissipation: 313W Polarisation: unipolar Gate charge: 95nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -10...22V Pulsed drain current: 160A Case: TO247-3 Drain-source voltage: 1.2kV Drain current: 46A On-state resistance: 60mΩ Type of transistor: N-MOSFET |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW68GR | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.25W Case: SOT23; TO236AB Pulsed collector current: 1A Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz |
Produkt ist nicht verfügbar |
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| PCA9555PWJ | NEXPERIA |
Category: Interfaces others - integrated circuits Description: IC: interface; 16bit,I/O expander; 2.3÷5.5VDC; I2C,SMBus; SMD Type of integrated circuit: interface Kind of integrated circuit: 16bit; I/O expander Supply voltage: 2.3...5.5V DC Interface: I2C; SMBus Mounting: SMD Case: TSSOP24 Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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BAS70-06W,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 70V; 70mA; SOT323; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: common anode; double Max. forward voltage: 1V Case: SOT323 Kind of package: reel; tape Max. forward impulse current: 0.1A |
auf Bestellung 6780 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84J-B3V9,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.55W; 3.9V; SMD; reel,tape; SOD323F; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.55W Zener voltage: 3.9V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD323F Max. load current: 0.25A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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BZX84J-C3V9,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.55W; 3.9V; SMD; reel,tape; SOD323F; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.55W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD323F Max. load current: 0.25A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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PMN50EPEX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A Mounting: SMD Case: SC74; SOT457; TSOP6 Kind of package: reel; tape Gate charge: 20nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -19A Drain-source voltage: -30V Drain current: -2.9A On-state resistance: 67mΩ Type of transistor: P-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
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| PMPB30XPEX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.9A; Idm: -25A Mounting: SMD Case: DFN2020MD-6; SOT1220 Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 19nC Technology: Trench Kind of channel: enhanced Gate-source voltage: -12...8V Pulsed drain current: -25A Drain-source voltage: -20V Drain current: -3.9A On-state resistance: 52mΩ Type of transistor: P-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
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PMT200EPEX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -70V; -1.5A; Idm: -9.7A Mounting: SMD Case: SC73; SOT223 Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 15.9nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -9.7A Drain-source voltage: -70V Drain current: -1.5A On-state resistance: 0.25Ω Type of transistor: P-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
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74HCT126D,652 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 4; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 4 Technology: CMOS; TTL Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of output: 3-state Kind of package: tube Family: HCT |
auf Bestellung 107 Stücke: Lieferzeit 14-21 Tag (e) |
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74HCT126D,653 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 4; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 4 Technology: CMOS; TTL Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of output: 3-state Kind of package: reel; tape Family: HCT |
auf Bestellung 639 Stücke: Lieferzeit 14-21 Tag (e) |
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| 74HCT238BQ,115 | NEXPERIA |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; TTL Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer Number of channels: 1 Number of inputs: 6 Technology: TTL Mounting: SMD Case: DHVQFN16 Supply voltage: 4.5...5.5V DC Family: HCT Kind of package: reel; tape Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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74HCT238D,653 | NEXPERIA |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; SMD Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer Number of channels: 1 Number of inputs: 6 Technology: CMOS; TTL Mounting: SMD Case: SO16 Supply voltage: 4.5...5.5V DC Family: HCT Kind of package: reel; tape Operating temperature: -40...125°C Quiescent current: 160µA |
Produkt ist nicht verfügbar |
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| 74HCT238PW,118 | NEXPERIA |
Category: Decoders, multiplexers, switches Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; TTL Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer Number of channels: 1 Number of inputs: 6 Technology: TTL Mounting: SMD Case: TSSOP16 Supply voltage: 4.5...5.5V DC Family: HCT Kind of package: reel; tape Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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| 74HCT241PW,118 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Kind of output: 3-state Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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|
|
74HCT280D,653 | NEXPERIA |
Category: Other logic integrated circuits Description: IC: digital; 9bit,parity checker/generator; CMOS,TTL; 4.5÷5.5VDC Mounting: SMD Operating temperature: -40...125°C Case: SO14 Kind of package: reel; tape Technology: CMOS; TTL Kind of integrated circuit: 9bit; parity checker/generator Family: HCT Type of integrated circuit: digital Supply voltage: 4.5...5.5V DC |
Produkt ist nicht verfügbar |
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| 74AUP2G132GS,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; CMOS; SMD; XSON8; Mini Logic; 800mVDC÷3.6VDC Type of integrated circuit: digital Kind of gate: NAND Technology: CMOS Mounting: SMD Case: XSON8 Manufacturer series: Mini Logic Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: AUP |
Produkt ist nicht verfügbar |
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| 74AUP2G132GXX | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; CMOS; SMD; X2SON8; 800mVDC÷3.6VDC; -40÷125°C Type of integrated circuit: digital Kind of gate: NAND Technology: CMOS Mounting: SMD Case: X2SON8 Supply voltage: 0.8...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: AUP |
Produkt ist nicht verfügbar |
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| 74LVCH1T45GW-Q100H | NEXPERIA |
Category: Level translators Description: IC: digital; 1bit,bidirectional,transceiver,translator; CMOS Type of integrated circuit: digital Kind of integrated circuit: 1bit; bidirectional; transceiver; translator Technology: CMOS Mounting: SMD Case: TSSOP6 Supply voltage: 1.5...5.5V DC Operating temperature: -40...125°C Kind of output: 3-state Kind of package: reel; tape Family: LVCH |
Produkt ist nicht verfügbar |
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| BZX84-C8V2.215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 8.2V; SMD; reel,tape; SOT23; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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| 74LVC2G86GT,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 2; IN: 2; CMOS,TTL; SMD; XSON8; Mini Logic; 4uA Kind of package: reel; tape Operating temperature: -40...125°C Manufacturer series: Mini Logic Delay time: 12.4ns Quiescent current: 4µA Number of channels: dual; 2 Type of integrated circuit: digital Number of inputs: 2 Kind of gate: XOR Case: XSON8 Mounting: SMD Technology: CMOS; TTL Family: LVC Supply voltage: 1.65...5.5V DC |
Produkt ist nicht verfügbar |
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| 74LVC86ABQ,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 1.2÷3.6VDC Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: DHVQFN14 Supply voltage: 1.2...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 40µA Delay time: 11.4ns Family: LVC |
Produkt ist nicht verfügbar |
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 |
PMEG6010CEH.115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD123F; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.66V Case: SOD123F Kind of package: reel; tape Max. forward impulse current: 9A |
Produkt ist nicht verfügbar |
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| 74LVT16374ADGG,118 | NEXPERIA |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 16; TTL; SMD; TSSOP48; reel,tape; LVT Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 16 Technology: TTL Mounting: SMD Case: TSSOP48 Supply voltage: 2.7...3.6V DC Operating temperature: -40...80°C Kind of package: reel; tape Family: LVT Trigger: positive-edge-triggered Kind of output: 3-state |
Produkt ist nicht verfügbar |
| MMBZ15VDL,215 |
|
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 15V; 40W; unidirectional,double,common cathode
Type of diode: TVS array
Mounting: SMD
Case: SOT23
Semiconductor structure: common cathode; double; unidirectional
Leakage current: 5nA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Max. off-state voltage: 12V
Breakdown voltage: 15V
Number of channels: 2
Category: Transil diodes - arrays
Description: Diode: TVS array; 15V; 40W; unidirectional,double,common cathode
Type of diode: TVS array
Mounting: SMD
Case: SOT23
Semiconductor structure: common cathode; double; unidirectional
Leakage current: 5nA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Max. off-state voltage: 12V
Breakdown voltage: 15V
Number of channels: 2
auf Bestellung 2730 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 895+ | 0.08 EUR |
| 995+ | 0.072 EUR |
| 1295+ | 0.055 EUR |
| 1370+ | 0.052 EUR |
| MMBZ18VAL,215 |
|
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 18V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Breakdown voltage: 18V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 14.5V
Features of semiconductor devices: ESD protection
Leakage current: 5nA
Number of channels: 2
Category: Transil diodes - arrays
Description: Diode: TVS array; 18V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Breakdown voltage: 18V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 14.5V
Features of semiconductor devices: ESD protection
Leakage current: 5nA
Number of channels: 2
Produkt ist nicht verfügbar
| MMBZ18VCL,215 |
|
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 18V; 40W; unidirectional,double,common cathode
Type of diode: TVS array
Breakdown voltage: 18V
Peak pulse power dissipation: 40W
Semiconductor structure: common cathode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 14.5V
Features of semiconductor devices: ESD protection
Leakage current: 100pA
Number of channels: 2
Category: Transil diodes - arrays
Description: Diode: TVS array; 18V; 40W; unidirectional,double,common cathode
Type of diode: TVS array
Breakdown voltage: 18V
Peak pulse power dissipation: 40W
Semiconductor structure: common cathode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 14.5V
Features of semiconductor devices: ESD protection
Leakage current: 100pA
Number of channels: 2
Produkt ist nicht verfügbar
| MMBZ27VCL,215 |
|
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 27V; 40W; unidirectional,double,common cathode
Type of diode: TVS array
Mounting: SMD
Case: SOT23
Semiconductor structure: common cathode; double; unidirectional
Leakage current: 5nA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Max. off-state voltage: 22V
Breakdown voltage: 27V
Number of channels: 2
Category: Transil diodes - arrays
Description: Diode: TVS array; 27V; 40W; unidirectional,double,common cathode
Type of diode: TVS array
Mounting: SMD
Case: SOT23
Semiconductor structure: common cathode; double; unidirectional
Leakage current: 5nA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Max. off-state voltage: 22V
Breakdown voltage: 27V
Number of channels: 2
auf Bestellung 13305 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 179+ | 0.4 EUR |
| 313+ | 0.23 EUR |
| 435+ | 0.16 EUR |
| 630+ | 0.11 EUR |
| 1583+ | 0.045 EUR |
| 1673+ | 0.043 EUR |
| MMBZ27VCL,235 |
|
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 27V; 40W; unidirectional,double,common cathode
Type of diode: TVS array
Mounting: SMD
Case: SOT23
Semiconductor structure: common cathode; double; unidirectional
Leakage current: 100pA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Max. off-state voltage: 22V
Breakdown voltage: 27V
Number of channels: 2
Category: Transil diodes - arrays
Description: Diode: TVS array; 27V; 40W; unidirectional,double,common cathode
Type of diode: TVS array
Mounting: SMD
Case: SOT23
Semiconductor structure: common cathode; double; unidirectional
Leakage current: 100pA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Max. off-state voltage: 22V
Breakdown voltage: 27V
Number of channels: 2
Produkt ist nicht verfügbar
| PSMN5R6-100BS,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 539A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.22mΩ
Mounting: SMD
Gate charge: 141nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 539A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.22mΩ
Mounting: SMD
Gate charge: 141nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMN5R6-100PS,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 539A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 539A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 539A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMN7R0-100BS,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; Idm: 475A; 269W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Pulsed drain current: 475A
Power dissipation: 269W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PMPB16EPX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.7A; Idm: -30A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.7A
Pulsed drain current: -30A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±25V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.7A; Idm: -30A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.7A
Pulsed drain current: -30A
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±25V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| PMPB24EPX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.1A; Idm: -26A
Drain-source voltage: -30V
Drain current: -4.1A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 28nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.1A; Idm: -26A
Drain-source voltage: -30V
Drain current: -4.1A
On-state resistance: 43mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 28nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -26A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Produkt ist nicht verfügbar
| 74HCT7541D,118 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Operating temperature: -40...125°C
Type of integrated circuit: digital
Number of channels: 8
Kind of output: 3-state
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of integrated circuit: buffer; line driver; non-inverting
Family: HCT
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Supply voltage: 4.5...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Operating temperature: -40...125°C
Type of integrated circuit: digital
Number of channels: 8
Kind of output: 3-state
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of integrated circuit: buffer; line driver; non-inverting
Family: HCT
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
| 74HCT7541PW,118 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Operating temperature: -40...125°C
Type of integrated circuit: digital
Number of channels: 8
Kind of output: 3-state
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of integrated circuit: buffer; line driver; non-inverting
Family: HCT
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Operating temperature: -40...125°C
Type of integrated circuit: digital
Number of channels: 8
Kind of output: 3-state
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of integrated circuit: buffer; line driver; non-inverting
Family: HCT
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
| BC847B |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
| BZV55-C47,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 47V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 47V; SMD; reel,tape; SOD80C; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 47V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Leakage current: 50nA
auf Bestellung 1110 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 358+ | 0.2 EUR |
| 481+ | 0.15 EUR |
| 727+ | 0.098 EUR |
| 878+ | 0.082 EUR |
| 1110+ | 0.064 EUR |
| 74LVC4245APW,112 |
|
Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; bus transceiver,logic level voltage translator
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; logic level voltage translator
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 1.5...3.6V DC; 1.5...5.5V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...125°C
Kind of package: tube
Integrated circuit features: 5V tolerant on inputs/outputs
Quiescent current: 10µA
Kind of output: 3-state
Family: LVC
Category: Level translators
Description: IC: digital; bus transceiver,logic level voltage translator
Type of integrated circuit: digital
Kind of integrated circuit: bus transceiver; logic level voltage translator
Number of channels: 8
Technology: CMOS; TTL
Supply voltage: 1.5...3.6V DC; 1.5...5.5V DC
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...125°C
Kind of package: tube
Integrated circuit features: 5V tolerant on inputs/outputs
Quiescent current: 10µA
Kind of output: 3-state
Family: LVC
Produkt ist nicht verfügbar
| 74LVC1G97GM,132 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer,Schmitt trigger; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; multiplexer; Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer,Schmitt trigger; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; multiplexer; Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Produkt ist nicht verfügbar
| 74LVC1G97GN,132 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer,Schmitt trigger; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; multiplexer; Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer,Schmitt trigger; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; multiplexer; Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Produkt ist nicht verfügbar
| 74LVC1G97GS,132 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer,Schmitt trigger; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; multiplexer; Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer,Schmitt trigger; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; multiplexer; Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Produkt ist nicht verfügbar
| 74LVC1G97GXZ |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; buffer,inverter; AND,configurable,NAND,NOR,OR; TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Kind of gate: AND; configurable; NAND; NOR; OR
Technology: TTL
Mounting: SMD
Case: X2SON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Category: Gates, inverters
Description: IC: digital; buffer,inverter; AND,configurable,NAND,NOR,OR; TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Kind of gate: AND; configurable; NAND; NOR; OR
Technology: TTL
Mounting: SMD
Case: X2SON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
| 74LVC1G98GS,132 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; buffer,inverter; CMOS; SMD; XSON6; Mini Logic; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Technology: CMOS
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Category: Gates, inverters
Description: IC: digital; buffer,inverter; CMOS; SMD; XSON6; Mini Logic; LVC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Technology: CMOS
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
| 74LVC595APW,112 |
|
Hersteller: NEXPERIA
Category: Shift registers
Description: IC: digital; shift register,parallel/serial out,serial input
Type of integrated circuit: digital
Kind of integrated circuit: parallel/serial out; serial input; shift register
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 1.2...3.6V DC
Family: LVC
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: 3-state
Integrated circuit features: 5V tolerant on inputs/outputs
Category: Shift registers
Description: IC: digital; shift register,parallel/serial out,serial input
Type of integrated circuit: digital
Kind of integrated circuit: parallel/serial out; serial input; shift register
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 1.2...3.6V DC
Family: LVC
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: 3-state
Integrated circuit features: 5V tolerant on inputs/outputs
Produkt ist nicht verfügbar
| PSMN7R0-30MLC,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 270A; 57W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 270A
Power dissipation: 57W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 270A; 57W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 270A
Power dissipation: 57W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMN7R0-30YL,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 76A; Idm: 260A; 51W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 76A
Pulsed drain current: 260A
Power dissipation: 51W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.97mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 76A; Idm: 260A; 51W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 76A
Pulsed drain current: 260A
Power dissipation: 51W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.97mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMN7R0-30YLC,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1490 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 64+ | 1.13 EUR |
| 91+ | 0.79 EUR |
| 100+ | 0.72 EUR |
| 134+ | 0.53 EUR |
| 142+ | 0.5 EUR |
| PSMN7R0-60YS,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 14.7mΩ
Kind of package: reel; tape
Power dissipation: 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 63A
Gate charge: 45nC
Drain-source voltage: 60V
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
On-state resistance: 14.7mΩ
Kind of package: reel; tape
Power dissipation: 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 63A
Gate charge: 45nC
Drain-source voltage: 60V
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 1459 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 38+ | 1.93 EUR |
| 43+ | 1.69 EUR |
| 57+ | 1.26 EUR |
| 61+ | 1.19 EUR |
| 500+ | 1.16 EUR |
| PSMN7R5-30YLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 202A
Power dissipation: 34W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; Idm: 202A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Pulsed drain current: 202A
Power dissipation: 34W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 12.4mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
| PSMN7R6-60BS,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 389A
Power dissipation: 149W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 38.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 389A
Power dissipation: 149W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 38.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMN7R6-60PS,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 92A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 92A
Pulsed drain current: 389A
Power dissipation: 149W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 38.7nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 92A; Idm: 389A; 149W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 92A
Pulsed drain current: 389A
Power dissipation: 149W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 38.7nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMNR70-30YLHX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 281A; Idm: 1589A
Type of transistor: N-MOSFET
Power dissipation: 268W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 157nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1589A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 30V
Drain current: 281A
On-state resistance: 2mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 281A; Idm: 1589A
Type of transistor: N-MOSFET
Power dissipation: 268W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 157nC
Technology: NextPowerS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1589A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 30V
Drain current: 281A
On-state resistance: 2mΩ
Produkt ist nicht verfügbar
| PSMN027-100BS,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 148A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 103W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 37A; Idm: 148A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 37A
Pulsed drain current: 148A
Power dissipation: 103W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PSMN0R7-25YLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 235A; 158W
Case: LFPAK56E; PowerSO8; SOT1023
Mounting: SMD
On-state resistance: 1.47mΩ
Kind of package: reel; tape
Power dissipation: 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 235A
Gate charge: 110.2nC
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 235A; 158W
Case: LFPAK56E; PowerSO8; SOT1023
Mounting: SMD
On-state resistance: 1.47mΩ
Kind of package: reel; tape
Power dissipation: 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 235A
Gate charge: 110.2nC
Drain-source voltage: 25V
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| PSMN1R7-25YLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 152A; Idm: 860A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 152A
Pulsed drain current: 860A
Power dissipation: 135W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.11mΩ
Mounting: SMD
Gate charge: 46.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 152A; Idm: 860A
Type of transistor: N-MOSFET
Technology: NextPowerS3
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 152A
Pulsed drain current: 860A
Power dissipation: 135W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.11mΩ
Mounting: SMD
Gate charge: 46.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PESD4V0Z1BSFYL |
|
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.9V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 4V
Breakdown voltage: 6.9V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.9V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 4V
Breakdown voltage: 6.9V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
| PESD3V6Z1BCSFYL |
|
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 3.6V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Max. off-state voltage: 3.6V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
| PTVS5V5D1BLYL |
Hersteller: NEXPERIA
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.6÷7.6V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 5.6...7.6V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.6÷7.6V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 5.6...7.6V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Produkt ist nicht verfügbar
| PZTA14-QX |
Hersteller: NEXPERIA
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 1.25W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 1.25W
Case: SC73; SOT223
Pulsed collector current: 0.8A
Current gain: 20000
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 1.25W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 1.25W
Case: SC73; SOT223
Pulsed collector current: 0.8A
Current gain: 20000
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Application: automotive industry
Produkt ist nicht verfügbar
| NSF040120L3A0Q |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 160A; 313W
Mounting: THT
Kind of package: tube
Power dissipation: 313W
Polarisation: unipolar
Gate charge: 95nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -10...22V
Pulsed drain current: 160A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 160A; 313W
Mounting: THT
Kind of package: tube
Power dissipation: 313W
Polarisation: unipolar
Gate charge: 95nC
Technology: SiC
Kind of channel: enhanced
Gate-source voltage: -10...22V
Pulsed drain current: 160A
Case: TO247-3
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 24.24 EUR |
| 4+ | 22.91 EUR |
| BCW68GR |
|
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 1A
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.8A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Pulsed collector current: 1A
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Produkt ist nicht verfügbar
| PCA9555PWJ |
|
Hersteller: NEXPERIA
Category: Interfaces others - integrated circuits
Description: IC: interface; 16bit,I/O expander; 2.3÷5.5VDC; I2C,SMBus; SMD
Type of integrated circuit: interface
Kind of integrated circuit: 16bit; I/O expander
Supply voltage: 2.3...5.5V DC
Interface: I2C; SMBus
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Category: Interfaces others - integrated circuits
Description: IC: interface; 16bit,I/O expander; 2.3÷5.5VDC; I2C,SMBus; SMD
Type of integrated circuit: interface
Kind of integrated circuit: 16bit; I/O expander
Supply voltage: 2.3...5.5V DC
Interface: I2C; SMBus
Mounting: SMD
Case: TSSOP24
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
| BAS70-06W,115 |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 70mA; SOT323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Case: SOT323
Kind of package: reel; tape
Max. forward impulse current: 0.1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 70V; 70mA; SOT323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Case: SOT323
Kind of package: reel; tape
Max. forward impulse current: 0.1A
auf Bestellung 6780 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1200+ | 0.06 EUR |
| 1340+ | 0.054 EUR |
| 1700+ | 0.042 EUR |
| 1800+ | 0.04 EUR |
| BZX84J-B3V9,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 3.9V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.55W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323F
Max. load current: 0.25A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 3.9V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.55W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323F
Max. load current: 0.25A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| BZX84J-C3V9,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 3.9V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.55W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323F
Max. load current: 0.25A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 3.9V; SMD; reel,tape; SOD323F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.55W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323F
Max. load current: 0.25A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| PMN50EPEX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 20nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -19A
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.9A; Idm: -19A
Mounting: SMD
Case: SC74; SOT457; TSOP6
Kind of package: reel; tape
Gate charge: 20nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -19A
Drain-source voltage: -30V
Drain current: -2.9A
On-state resistance: 67mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
| PMPB30XPEX |
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.9A; Idm: -25A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 19nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: -12...8V
Pulsed drain current: -25A
Drain-source voltage: -20V
Drain current: -3.9A
On-state resistance: 52mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.9A; Idm: -25A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 19nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: -12...8V
Pulsed drain current: -25A
Drain-source voltage: -20V
Drain current: -3.9A
On-state resistance: 52mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
| PMT200EPEX |
|
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -70V; -1.5A; Idm: -9.7A
Mounting: SMD
Case: SC73; SOT223
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 15.9nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -9.7A
Drain-source voltage: -70V
Drain current: -1.5A
On-state resistance: 0.25Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -70V; -1.5A; Idm: -9.7A
Mounting: SMD
Case: SC73; SOT223
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate
Gate charge: 15.9nC
Technology: Trench
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -9.7A
Drain-source voltage: -70V
Drain current: -1.5A
On-state resistance: 0.25Ω
Type of transistor: P-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
| 74HCT126D,652 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 4; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: tube
Family: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 4; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: tube
Family: HCT
auf Bestellung 107 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 107+ | 0.67 EUR |
| 74HCT126D,653 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 4; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 4; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: HCT
auf Bestellung 639 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 167+ | 0.43 EUR |
| 175+ | 0.41 EUR |
| 196+ | 0.37 EUR |
| 230+ | 0.31 EUR |
| 360+ | 0.2 EUR |
| 382+ | 0.19 EUR |
| 74HCT238BQ,115 |
|
Hersteller: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: TTL
Mounting: SMD
Case: DHVQFN16
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: TTL
Mounting: SMD
Case: DHVQFN16
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
| 74HCT238D,653 |
|
Hersteller: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...125°C
Quiescent current: 160µA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...125°C
Quiescent current: 160µA
Produkt ist nicht verfügbar
| 74HCT238PW,118 |
|
Hersteller: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4.5...5.5V DC
Family: HCT
Kind of package: reel; tape
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
| 74HCT241PW,118 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Kind of package: reel; tape
Produkt ist nicht verfügbar
| 74HCT280D,653 |
|
Hersteller: NEXPERIA
Category: Other logic integrated circuits
Description: IC: digital; 9bit,parity checker/generator; CMOS,TTL; 4.5÷5.5VDC
Mounting: SMD
Operating temperature: -40...125°C
Case: SO14
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: 9bit; parity checker/generator
Family: HCT
Type of integrated circuit: digital
Supply voltage: 4.5...5.5V DC
Category: Other logic integrated circuits
Description: IC: digital; 9bit,parity checker/generator; CMOS,TTL; 4.5÷5.5VDC
Mounting: SMD
Operating temperature: -40...125°C
Case: SO14
Kind of package: reel; tape
Technology: CMOS; TTL
Kind of integrated circuit: 9bit; parity checker/generator
Family: HCT
Type of integrated circuit: digital
Supply voltage: 4.5...5.5V DC
Produkt ist nicht verfügbar
| 74AUP2G132GS,115 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; CMOS; SMD; XSON8; Mini Logic; 800mVDC÷3.6VDC
Type of integrated circuit: digital
Kind of gate: NAND
Technology: CMOS
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Category: Gates, inverters
Description: IC: digital; NAND; CMOS; SMD; XSON8; Mini Logic; 800mVDC÷3.6VDC
Type of integrated circuit: digital
Kind of gate: NAND
Technology: CMOS
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Produkt ist nicht verfügbar
| 74AUP2G132GXX |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; CMOS; SMD; X2SON8; 800mVDC÷3.6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Technology: CMOS
Mounting: SMD
Case: X2SON8
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Category: Gates, inverters
Description: IC: digital; NAND; CMOS; SMD; X2SON8; 800mVDC÷3.6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Technology: CMOS
Mounting: SMD
Case: X2SON8
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Produkt ist nicht verfügbar
| 74LVCH1T45GW-Q100H |
|
Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; 1bit,bidirectional,transceiver,translator; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 1bit; bidirectional; transceiver; translator
Technology: CMOS
Mounting: SMD
Case: TSSOP6
Supply voltage: 1.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVCH
Category: Level translators
Description: IC: digital; 1bit,bidirectional,transceiver,translator; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 1bit; bidirectional; transceiver; translator
Technology: CMOS
Mounting: SMD
Case: TSSOP6
Supply voltage: 1.5...5.5V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: LVCH
Produkt ist nicht verfügbar
| BZX84-C8V2.215 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 8.2V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 8.2V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| 74LVC2G86GT,115 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; CMOS,TTL; SMD; XSON8; Mini Logic; 4uA
Kind of package: reel; tape
Operating temperature: -40...125°C
Manufacturer series: Mini Logic
Delay time: 12.4ns
Quiescent current: 4µA
Number of channels: dual; 2
Type of integrated circuit: digital
Number of inputs: 2
Kind of gate: XOR
Case: XSON8
Mounting: SMD
Technology: CMOS; TTL
Family: LVC
Supply voltage: 1.65...5.5V DC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 2; IN: 2; CMOS,TTL; SMD; XSON8; Mini Logic; 4uA
Kind of package: reel; tape
Operating temperature: -40...125°C
Manufacturer series: Mini Logic
Delay time: 12.4ns
Quiescent current: 4µA
Number of channels: dual; 2
Type of integrated circuit: digital
Number of inputs: 2
Kind of gate: XOR
Case: XSON8
Mounting: SMD
Technology: CMOS; TTL
Family: LVC
Supply voltage: 1.65...5.5V DC
Produkt ist nicht verfügbar
| 74LVC86ABQ,115 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 1.2÷3.6VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Supply voltage: 1.2...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Delay time: 11.4ns
Family: LVC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 1.2÷3.6VDC
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Supply voltage: 1.2...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Delay time: 11.4ns
Family: LVC
Produkt ist nicht verfügbar
| PMEG6010CEH.115 |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: SOD123F
Kind of package: reel; tape
Max. forward impulse current: 9A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 1A; SOD123F; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Case: SOD123F
Kind of package: reel; tape
Max. forward impulse current: 9A
Produkt ist nicht verfügbar
| 74LVT16374ADGG,118 |
|
Hersteller: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 16; TTL; SMD; TSSOP48; reel,tape; LVT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 16
Technology: TTL
Mounting: SMD
Case: TSSOP48
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...80°C
Kind of package: reel; tape
Family: LVT
Trigger: positive-edge-triggered
Kind of output: 3-state
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 16; TTL; SMD; TSSOP48; reel,tape; LVT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 16
Technology: TTL
Mounting: SMD
Case: TSSOP48
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...80°C
Kind of package: reel; tape
Family: LVT
Trigger: positive-edge-triggered
Kind of output: 3-state
Produkt ist nicht verfügbar