Produkte > SQD
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
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SQD* | auf Bestellung 164 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
SQD07N25-350H-GE3 | Vishay | Trans MOSFET N-CH 250V 7A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD07N25-350H_GE3 | Vishay Siliconix | Description: MOSFET N-CH 250V 7A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
SQD07N25-350H_GE3 | Vishay Semiconductors | MOSFET N-Channel 250V AEC-Q101 Qualified | auf Bestellung 7372 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD07N25-350H_GE3 | Vishay Siliconix | Description: MOSFET N-CH 250V 7A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
SQD07N25-350H_GE3 | Vishay | Trans MOSFET N-CH 250V 7A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD100A60S | SANREX | H3-4 | auf Bestellung 19 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD100N02-3M5L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 100A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 1454 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD100N02-3M5L_GE3 | Vishay | Automotive N-Channel 20 V MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
SQD100N02-3M5L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 100A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD100N02-3M5L_GE3 | Vishay Semiconductors | MOSFET N Ch 20Vds 20Vgs AEC-Q101 Qualified | auf Bestellung 5942 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD100N02_3M5L4GE3 | Vishay / Siliconix | MOSFET 20V Vds 20V Vgs TO-252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD100N03-3M2L-GE3 | Vishay / Siliconix | MOSFETs RECOMMENDED ALT SQD100N033M2L_GE3 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD100N03-3M2L_GE3 | Vishay | Trans MOSFET N-CH 30V 100A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD100N03-3M2L_GE3 | Vishay | Trans MOSFET N-CH 30V 100A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD100N03-3M2L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 100A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6316 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD100N03-3M2L_GE3 | Vishay / Siliconix | MOSFETs 30V 100A 136W N-Channel MOSFET | auf Bestellung 1480 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD100N03-3M2L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 100A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6316 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD100N03-3M4_GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 100A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7349 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD100N03-3M4_GE3 | Vishay Semiconductors | MOSFETs 30V 100A 136W N-Channel MOSFET | auf Bestellung 1653 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD100N03-3M4_GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 100A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7349 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD100N03-3M4_GE3 | Vishay | Automotive N-Channel 30 V (D-S) 175 C MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
SQD100N04-3M6-GE3 | Vishay | Trans MOSFET N-CH 40V 100A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD100N04-3M6L-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 136W Case: TO252 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
SQD100N04-3M6L-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 400A Power dissipation: 136W Case: TO252 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
SQD100N04-3M6L-GE3 | Vishay / Siliconix | MOSFET RECOMMENDED ALT SQD100N04-3M6LGE | Produkt ist nicht verfügbar | |||||||||||||||||
SQD100N04-3M6L-GE3 | Vishay | Trans MOSFET N-CH 40V 100A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD100N04-3m6L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 100A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD100N04-3m6L_GE3 | Vishay Semiconductors | MOSFETs N-Channel 40V AEC-Q101 Qualified | auf Bestellung 2584 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD100N04-3m6L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 100A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V | auf Bestellung 5385 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD100N04-3M6L_GE3 | VISHAY | Description: VISHAY - SQD100N04-3M6L_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.003 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 136W Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-252AA Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET Series productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.003ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.003ohm SVHC: No SVHC (17-Jan-2022) | auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD100N04-3m6_GE3 | Vishay Semiconductors | MOSFET N-Channel 40V AEC-Q101 Qualified | auf Bestellung 1324 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD100N04-3m6_GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 100A TO252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD100N04-3M6_GE3 | VISHAY | Description: VISHAY - SQD100N04-3M6_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.003 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 136W Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-252AA Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET Series productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.003ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.003ohm SVHC: No SVHC (17-Jan-2022) | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD100N04-3M6_GE3 | Vishay | Trans MOSFET N-CH 40V 100A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD100N04-3m6_GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 100A TO252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD100N04_3M6T4GE3 | Vishay / Siliconix | MOSFET 40V Vds 20V Vgs TO-252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD10950E_GE3 | Vishay | N-Channel MOSFET | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD10950E_GE3 | Vishay Siliconix | Description: MOSFET N-CH 250V 11.5A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 162mOhm @ 12A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 3945 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD10950E_GE3 | Vishay / Siliconix | MOSFETs N-CHANNEL 250-V (D-S) 175C MOSFET | auf Bestellung 2451 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD10950E_GE3 | Vishay Siliconix | Description: MOSFET N-CH 250V 11.5A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 162mOhm @ 12A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD10950E_GE3 | Vishay | N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
SQD10N30-330H_4GE3 | Vishay Siliconix | Description: N-CHANNEL 300-V (D-S) 175C MOSFE Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1667 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD10N30-330H_4GE3 | Vishay Siliconix | Description: N-CHANNEL 300-V (D-S) 175C MOSFE Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD10N30-330H_4GE3 | Vishay / Siliconix | MOSFETs N-CHANNEL 300-V (D-S) 175C MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
SQD10N30-330H_GE3 | VISHAY | Description: VISHAY - SQD10N30-330H_GE3 - Leistungs-MOSFET, n-Kanal, 300 V, 10 A, 0.275 ohm, TO-252AA, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 300 Dauer-Drainstrom Id: 10 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 107 Bauform - Transistor: TO-252AA Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3 Produktpalette: TrenchFET Series Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.275 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 3.8 SVHC: No SVHC (17-Jan-2022) | Produkt ist nicht verfügbar | |||||||||||||||||
SQD10N30-330H_GE3 | Vishay / Siliconix | MOSFETs N Ch 300Vds 30Vgs AEC-Q101 Qualified | auf Bestellung 4309 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD10N30-330H_GE3 | Vishay Siliconix | Description: MOSFET N-CH 300V 10A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 3707 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD10N30-330H_GE3 | VISHAY | Description: VISHAY - SQD10N30-330H_GE3 - Leistungs-MOSFET, n-Kanal, 300 V, 10 A, 0.275 ohm, TO-252AA, Oberflächenmontage | Produkt ist nicht verfügbar | |||||||||||||||||
SQD10N30-330H_GE3 | Vishay | Trans MOSFET N-CH 300V 10A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD10N30-330H_GE3 | Vishay Siliconix | Description: MOSFET N-CH 300V 10A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 14A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD15N06-42L-GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 15A TO252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD15N06-42L-GE3 | Vishay | Trans MOSFET N-CH 60V 15A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD15N06-42L-GE3 | Vishay | Trans MOSFET N-CH 60V 15A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD15N06-42L_GE3 | VISHAY | Description: VISHAY - SQD15N06-42L_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 15 A, 0.036 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 37W Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.036ohm SVHC: To Be Advised | auf Bestellung 268 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD15N06-42L_GE3 | Vishay | Trans MOSFET N-CH 60V 15A Automotive 3-Pin(2+Tab) DPAK | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD15N06-42L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 15A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V | auf Bestellung 830 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD15N06-42L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 15A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 10A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
SQD15N06-42L_GE3 | Vishay / Siliconix | MOSFET 60V 15A 37W AEC-Q101 Qualified | auf Bestellung 4716 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD15N06-42L_T4GE3 | Vishay Siliconix | Description: N-CHANNEL 60-V (D-S) 175C MOSFET | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD15N06-42L_T4GE3 | Vishay / Siliconix | MOSFET N-CHANNEL 60-V (D-S) 175C MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
SQD15N06-42L_T4GE3 | Vishay Siliconix | Description: N-CHANNEL 60-V (D-S) 175C MOSFET | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD19P06-60L-E3 | Vishay | SQD19P06-60L-E3 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD19P06-60L-GE3 | Vishay | Tranzystor MOSFET, Kana? P, 20 A, 60 V, 0.046 ohm, 10 V, 2.5 V VISHAY SQD19P06-60L-E3; SQD19P06-60L_GE3; SQD19P06-60L_GE3 TSQD19p06-60l | auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) | |||||||||||||||||
SQD19P06-60L_GE3 | Vishay | Trans MOSFET P-CH 60V 20A Automotive 3-Pin(2+Tab) TO-252AA T/R | Produkt ist nicht verfügbar | |||||||||||||||||
SQD19P06-60L_GE3 | Vishay Siliconix | Description: MOSFET P-CH 60V 20A TO252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD19P06-60L_GE3 | Vishay Semiconductors | MOSFET 60V 20A 46W AEC-Q101 Qualified | auf Bestellung 28814 Stücke: Lieferzeit 439-443 Tag (e) |
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SQD19P06-60L_GE3 | VISHAY | Description: VISHAY - SQD19P06-60L_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 20 A, 0.046 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Verlustleistung: 46 Kanaltyp: p-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.046 Qualifikation: AEC-Q101 usEccn: EAR99 SVHC: Lead (19-Jan-2021) | auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD19P06-60L_GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 15W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -11A Power dissipation: 15W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 27nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
SQD19P06-60L_GE3 | Vishay | Trans MOSFET P-CH 60V 20A Automotive 3-Pin(2+Tab) TO-252AA T/R | auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD19P06-60L_GE3 | Vishay | Trans MOSFET P-CH 60V 20A Automotive 3-Pin(2+Tab) TO-252AA T/R | auf Bestellung 4001 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD19P06-60L_GE3 | Vishay | Trans MOSFET P-CH 60V 20A Automotive 3-Pin(2+Tab) TO-252AA T/R | auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD19P06-60L_GE3 | Vishay Siliconix | Description: MOSFET P-CH 60V 20A TO252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD19P06-60L_GE3 | VISHAY | Description: VISHAY - SQD19P06-60L_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 20 A, 0.046 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 46W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.046ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 2367 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD19P06-60L_GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 15W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -11A Power dissipation: 15W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 27nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
SQD19P06-60L_T4GE3 | Vishay | Trans MOSFET P-CH 60V 20A Automotive 3-Pin(2+Tab) TO-252AA T/R | Produkt ist nicht verfügbar | |||||||||||||||||
SQD19P06-60L_T4GE3 | Vishay | Trans MOSFET P-CH 60V 20A Automotive 3-Pin(2+Tab) TO-252AA T/R | Produkt ist nicht verfügbar | |||||||||||||||||
SQD19P06-60L_T4GE3 | Vishay Siliconix | Description: MOSFET P-CH 60V 20A TO252AA | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD19P06-60L_T4GE3 | Vishay Semiconductors | MOSFETs -60V Vds TO-252 AEC-Q101 Qualified | auf Bestellung 71398 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD19P06-60L_T4GE3 | Vishay Siliconix | Description: MOSFET P-CH 60V 20A TO252AA | auf Bestellung 3636 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD200A40 | SanRex | 200A/400V/GTR/1U | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD200A60 | SanRex | 200A/600V/GTR/1U | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD200A60 | SANREX | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
SQD200A60 | SanRex | 07+; | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD200A60 | SANREX | H4-5 | auf Bestellung 12 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD200A60 | SANEN | MODULE | auf Bestellung 187 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD200A60 | SANREX | . | auf Bestellung 19 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD200AA100 | SANEN | MODULE | auf Bestellung 120 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD200AA100(120) | SanRex | 07+; | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD200AA120 | SANEN | MODULE | auf Bestellung 63 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD200BA60 | SANEN | MODULE | auf Bestellung 59 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD23N06-31L-GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 23A TO252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD23N06-31L-GE3 | Vishay | Trans MOSFET N-CH 60V 23A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD23N06-31L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 23A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 25 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD23N06-31L_GE3 | Vishay | Trans MOSFET N-CH 60V 23A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD23N06-31L_GE3 | Vishay / Siliconix | MOSFETs 60V 23A 100W AEC-Q101 Qualified | auf Bestellung 20284 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD23N06-31L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 23A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 25 V | auf Bestellung 3603 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD23N06-31L_T4GE3 | Vishay / Siliconix | MOSFET 60V Vds 20V Vgs TO-252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD25N06-22L-GE3 | Vishay | Trans MOSFET N-CH 60V 25A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD25N06-22L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 25A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD25N06-22L_GE3 | Vishay | Trans MOSFET N-CH 60V 25A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD25N06-22L_GE3 | Vishay / Siliconix | MOSFETs 60V 25A 62W AEC-Q101 Qualified | auf Bestellung 4329 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD25N06-22L_GE3 | VISHAY | Description: VISHAY - SQD25N06-22L_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 25 A, 0.018 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 62W Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pins Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.018ohm | auf Bestellung 4470 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD25N06-22L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 25A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V | auf Bestellung 3800 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD25N06-22L_GE3 | VISHAY | Description: VISHAY - SQD25N06-22L_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 25 A, 0.018 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 62W Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pins Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.018ohm | auf Bestellung 4470 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD25N06-22L_T4GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 25A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD25N06-22L_T4GE3 | Vishay Semiconductors | MOSFETs 60V 25A 62W AEC-Q101 Qualified | auf Bestellung 7162 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD25N06-22L_T4GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 25A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD25N06-35L-GE3 | Vishay Siliconix | Description: MOSFET N-CH D-S 60V 25A TO252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD25N15-52-T4_GE3 | Vishay Siliconix | Description: MOSFET N-CH 150V 25A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD25N15-52-T4_GE3 | Vishay / Siliconix | MOSFET 150V Vds 20V Vgs TO-252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD25N15-52_GE3 | Vishay | Trans MOSFET N-CH 150V 25A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD25N15-52_GE3 | VISHAY | Description: VISHAY - SQD25N15-52_GE3 - Leistungs-MOSFET, n-Kanal, 150 V, 25 A, 0.038 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 107W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 107W Bauform - Transistor: TO-252AA Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET Series productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.038ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.038ohm SVHC: No SVHC (17-Jan-2022) | auf Bestellung 11989 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD25N15-52_GE3 | Vishay / Siliconix | MOSFET 150V 25A 136W AEC-Q101 Qualified | auf Bestellung 3016 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD25N15-52_GE3 | Vishay Siliconix | Description: MOSFET N-CH 150V 25A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5814 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD25N15-52_GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 107W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 16A Power dissipation: 107W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Gate charge: 34nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
SQD25N15-52_GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 107W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 16A Power dissipation: 107W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Gate charge: 34nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
SQD25N15-52_GE3 | VISHAY | Description: VISHAY - SQD25N15-52_GE3 - Leistungs-MOSFET, n-Kanal, 150 V, 25 A, 0.038 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 107W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 107W Bauform - Transistor: TO-252AA Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET Series productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.038ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.038ohm SVHC: No SVHC (17-Jan-2022) | auf Bestellung 11989 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD25N15-52_GE3 | Vishay Siliconix | Description: MOSFET N-CH 150V 25A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD300A(BA)60 | SAMREX | MODULE | auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD300A(BA)60 | SanRex | 07+; | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD300A40 | SanRex | 300A/400V/GTR/1U | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD300A60 | SANREX | . | auf Bestellung 19 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD300A60 | SANSHA | 300A/450V/GTR | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD300A60 | SANREX | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
SQD300A60 | SanRex | 300A/600V/GTR/1U | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD300A60 | SAMREX | MODULE | auf Bestellung 692 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD300AA100 | SanRex | 300A/1000V/GTR/1U | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD300AA100 | SANREX | auf Bestellung 14 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
SQD300AA100 | SANREX | H3-5 | auf Bestellung 21 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD300AA100 | SAMREX | MODULE | auf Bestellung 565 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD300AA100(120) | SanRex | 07+; | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD300AA100E | SANREX | H3-5 | auf Bestellung 35 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD300AA100E | SANREX | . | auf Bestellung 19 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD300AA100E | SANREX | auf Bestellung 18 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
SQD300AA120 | SANREX | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
SQD300AA120 | SANREX | H3-4 | auf Bestellung 19 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD300AA120 | SAMREX | MODULE | auf Bestellung 160 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD300AA120 | SanRex | 300A/1200V/GTR/1U | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD300AA160 | SAMREX | MODULE | auf Bestellung 160 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD300BA60 | SANREX | auf Bestellung 18 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
SQD300BA60 | SanRex | 300A/600V/GTR/1U | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD300BA60 | SAMREX | MODULE | auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD300BA60 | SANREX | . | auf Bestellung 19 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD300BA60/400BA/300AA100E | auf Bestellung 28 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
SQD300H100 | SANSHA | 300A/1000V/GTR | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD30N05-20L-GE3 | Vishay | Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD30N05-20L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 55V 30A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD30N05-20L_GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 55V; 30A; Idm: 120A; 50W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 30A Pulsed drain current: 120A Power dissipation: 50W Case: TO252 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
SQD30N05-20L_GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 55V; 30A; Idm: 120A; 50W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 30A Pulsed drain current: 120A Power dissipation: 50W Case: TO252 Gate-source voltage: ±20V On-state resistance: 43mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
SQD30N05-20L_GE3 | Vishay | Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD30N05-20L_GE3 | VISHAY | Description: VISHAY - SQD30N05-20L_GE3 - Leistungs-MOSFET, n-Kanal, 55 V, 30 A, 0.016 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: - Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.016ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 8122 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD30N05-20L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 55V 30A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5643 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD30N05-20L_GE3 | Vishay Semiconductors | MOSFET N-Channel 55V AEC-Q101 Qualified | auf Bestellung 31484 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD30N05-20L_T4GE3 | Vishay Siliconix | Description: MOSFET N-CH 55V 30A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
SQD30N05-20L_T4GE3 | Vishay / Siliconix | MOSFET 55V Vds 20V Vgs TO-252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD35JA140 | SanRex | 35A/1400V/GTR/1U | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD35Ja140(160) | SanRex | 07+; | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD35JA160 | SanRex | 35A/1600V/GTR/1U | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD35N05-26L-GE3 | Vishay Siliconix | Description: MOSFET N-CH 55V 30A TO252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD35N05-26L-GE3 | Vishay | Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40020EL_GE3 | Vishay / Siliconix | MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET | auf Bestellung 7963 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40020EL_GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 100A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40020EL_GE3 | Vishay | Trans MOSFET N-CH 40V 100A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40020EL_GE3 | Vishay | Trans MOSFET N-CH 40V 100A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40020EL_GE3 | Vishay | Trans MOSFET N-CH 40V 100A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40020EL_GE3 | VISHAY | Description: VISHAY - SQD40020EL_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.00178 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 107W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00178ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 1926 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD40020EL_GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 100A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 1434 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40020E_GE3 | Vishay | Trans MOSFET N-CH 40V 100A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40020E_GE3 | Vishay | Trans MOSFET N-CH 40V 100A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40020E_GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 100A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40020E_GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 100A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40020E_GE3 | Vishay / Siliconix | MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET | auf Bestellung 4264 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40030E_GE3 | Vishay Semiconductors | MOSFET N-Ch 40V Vds AEC-Q101 Qualified | auf Bestellung 1966 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40030E_GE3 | Vishay | Trans MOSFET N-CH 40V 100A Automotive 4-Pin(3+Tab) TO-252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40031EL_GE3 | Vishay | Trans MOSFET P-CH 30V 100A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40031EL_GE3 | Vishay Siliconix | Description: MOSFET P-CH 30V 100A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 7681 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40031EL_GE3 | VISHAY | Description: VISHAY - SQD40031EL_GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 100 A, 0.00263 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00263ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 10560 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD40031EL_GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -94A; 45W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -94A Power dissipation: 45W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 186nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 1972 Stücke: Lieferzeit 7-14 Tag (e) |
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SQD40031EL_GE3 | Vishay | Trans MOSFET P-CH 30V 100A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40031EL_GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -94A; 45W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -94A Power dissipation: 45W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 186nC Kind of channel: enhanced | auf Bestellung 1972 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD40031EL_GE3 | Vishay Siliconix | Description: MOSFET P-CH 30V 100A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40031EL_GE3 | Vishay Semiconductors | MOSFET -30V Vds 20V Vgs DPAK (TO-252) | auf Bestellung 29730 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40052EL_GE3 | VISHAY | SQD40052EL-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40052EL_GE3 | Vishay / Siliconix | MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET | auf Bestellung 1753 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40052EL_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 40 V (D-S) Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V | auf Bestellung 5969 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40052EL_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 40 V (D-S) Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40061EL-T4_GE3 | Vishay / Siliconix | MOSFET P-CHANNEL 40-V (D-S) 175C MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40061EL-T4_GE3 | Vishay Siliconix | Description: P-CHANNEL 40-V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40061EL-T4_GE3 | Vishay Siliconix | Description: P-CHANNEL 40-V (D-S) 175C MOSFET Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40061EL_GE3 | VISHAY | Description: VISHAY - SQD40061EL_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 100 A, 0.0042 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 107W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0042ohm SVHC: To Be Advised | auf Bestellung 6755 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD40061EL_GE3 | Vishay | Trans MOSFET P-CH 40V 100A Automotive 3-Pin(2+Tab) DPAK | auf Bestellung 1663 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD40061EL_GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 100A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40061EL_GE3 | Vishay | Trans MOSFET P-CH 40V 100A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40061EL_GE3 | Vishay / Siliconix | MOSFETs -40V Vds 20V Vgs DPAK (TO-252) | auf Bestellung 104098 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40061EL_GE3 | VISHAY | Description: VISHAY - SQD40061EL_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 100 A, 0.0042 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 107W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0042ohm SVHC: To Be Advised | auf Bestellung 6755 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD40061EL_GE3 | Vishay | Trans MOSFET P-CH 40V 100A 3-Pin(2+Tab) DPAK Automotive AEC-Q101 | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD40061EL_GE3 | Vishay | Trans MOSFET P-CH 40V 100A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40061EL_GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 100A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 30A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 4607 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40081EL_GE3 | Vishay | Trans MOSFET P-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK | auf Bestellung 9999 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD40081EL_GE3 | Vishay | Trans MOSFET P-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK | auf Bestellung 1850 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD40081EL_GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 50A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 7396 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40081EL_GE3 | Vishay | Trans MOSFET P-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40081EL_GE3 | Vishay / Siliconix | MOSFET -40V Vds; +/-20V Vgs TO-252; -50A Id | auf Bestellung 21875 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40081EL_GE3 | VISHAY | Description: VISHAY - SQD40081EL_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 50 A, 0.007 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 71W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.007ohm SVHC: To Be Advised | auf Bestellung 4976 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD40081EL_GE3 | Vishay | Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD40081EL_GE3 | Vishay | Trans MOSFET P-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK | auf Bestellung 28000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD40081EL_GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 50A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 25A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40081EL_GE3 | Vishay | Trans MOSFET P-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD40081EL_GE3 | Vishay | Trans MOSFET P-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40081EL_GE3 | Vishay | Trans MOSFET P-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK | auf Bestellung 1850 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD40081EL_GE3 | VISHAY | Description: VISHAY - SQD40081EL_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 50 A, 0.007 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 71W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.007ohm SVHC: To Be Advised | auf Bestellung 4976 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD40081EL_GE3 транзистор Produktcode: 196931 | Transistoren > Transistoren P-Kanal-Feld | Produkt ist nicht verfügbar | ||||||||||||||||||
SQD400A60 | SANREX | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
SQD400A60N | SANREX | H3-4 | auf Bestellung 19 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD400A60S | SANREX | H3-4 | auf Bestellung 19 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD400A60S | SANREX | . | auf Bestellung 19 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD400A60S | SAMREX | MODULE | auf Bestellung 360 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD400AA-120 | SAMREX | MODULE | auf Bestellung 87 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD400AA100 | SAMREX | MODULE | auf Bestellung 80 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD400AA100 | SANREX | H4-7 | auf Bestellung 19 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD400AA100 | SanRex | 400A/1000V/GTR/1U | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD400AA100(120) | SanRex | 07+; | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD400AA120 | SanRex | 400A/1200V/GTR/1U | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD400AA120 | SAMREX | MODULE | auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD400BA60 | SanRex | 07+; | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD400BA60 | SANREX | H3-4 | auf Bestellung 19 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD400BA60 | SANREX | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
SQD400BA60 | SanRex | 400A/600V/GTR/1U | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD400BA60 | SAMREX | MODULE | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD40131EL_GE3 | Vishay | Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40131EL_GE3 | VISHAY | Description: VISHAY - SQD40131EL_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 50 A, 0.0095 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 62W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0095ohm SVHC: To Be Advised | auf Bestellung 16550 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD40131EL_GE3 | Vishay | Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40131EL_GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 50A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4065 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40131EL_GE3 | Vishay | Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK | auf Bestellung 929 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD40131EL_GE3 | VISHAY | Description: VISHAY - SQD40131EL_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 50 A, 0.0095 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 62W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0095ohm SVHC: To Be Advised | auf Bestellung 16550 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD40131EL_GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 50A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40131EL_GE3 | Vishay | Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40131EL_GE3 | Vishay / Siliconix | MOSFETs -40V Vds -/+20V Vgs AEC-Q101 Qualified | auf Bestellung 69606 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40131EL_GE3 | Vishay | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
SQD40N04-10A-GE3 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
SQD40N04-10A-GE3 | Vishay | Trans MOSFET N-CH 40V 42A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40N04-10A-GE3 | Vishay Siliconix | Description: MOSFET N-CH D-S 40V 42A TO252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40N06-14L-GE3 | Vishay | Trans MOSFET N-CH 60V 40A Automotive | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40N06-14L-GE3 | Vishay / Siliconix | MOSFETs RECOMMENDED ALT SQD40N06-14L_GE3 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40N06-14L-GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 40A TO-252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40N06-14L_GE3 | Vishay Semiconductors | MOSFETs 55V 40A 75W AEC-Q101 Qualified | auf Bestellung 52132 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40N06-14L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 40A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2105 pF @ 25 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40N06-14L_GE3 Produktcode: 204493 | Transistoren > MOSFET N-CH | erwartet 10 Stück: | ||||||||||||||||||
SQD40N06-14L_GE3 | Vishay | Trans MOSFET N-CH 60V 40A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD40N06-14L_GE3 | Vishay | Trans MOSFET N-CH 60V 40A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40N06-14L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 40A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2105 pF @ 25 V | auf Bestellung 6081 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40N06-14L_GE3 | Vishay | Trans MOSFET N-CH 60V 40A Automotive | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40N06-14L_GE3 | Vishay | Trans MOSFET N-CH 60V 40A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40N06-14L_T4GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 40A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2105 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40N06-14L_T4GE3 | Vishay / Siliconix | MOSFETs 60V Vds 20V Vgs TO-252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40N06-14L_T4GE3 | Vishay | N-CHANNEL 60-V (D-S) 175C MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40N06-25L-GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 30A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40N10-25-GE3 | Vishay / Siliconix | MOSFET RECOMMENDED ALT SQD40N10-25_GE3 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40N10-25-GE3 | Vishay | Trans MOSFET N-CH 100V 40A Automotive 3-Pin(2+Tab) TO-252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40N10-25-T4_GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 40A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40N10-25-T4_GE3 | Vishay / Siliconix | MOSFETs RECOMMENDED ALT SQD70140EL_GE3 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40N10-25_GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 40A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40N10-25_GE3 | Vishay | Trans MOSFET N-CH 100V 40A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40N10-25_GE3 | Vishay / Siliconix | MOSFETs RECOMMENDED ALT SQD70140EL_GE3 | auf Bestellung 1979 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40N10-25_GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 40A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V | auf Bestellung 3393 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40N10-25_GE3 Produktcode: 200347 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
SQD40N10-25_GE3 | Vishay | Trans MOSFET N-CH 100V 40A Automotive 3-Pin(2+Tab) TO-252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40P10-40L-GE3 | Vishay | Trans MOSFET P-CH 100V 38A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40P10-40L_GE3 | Vishay / Siliconix | MOSFET -100V -30A 136W AEC-Q101 Qualified | auf Bestellung 32914 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD40P10-40L_GE3 | Vishay | Trans MOSFET P-CH 100V 38A Automotive 3-Pin(2+Tab) TO-252AA | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD40P10-40L_GE3 | Vishay Siliconix | Description: MOSFET P-CH 100V 38A TO252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40P10-40L_GE3 Produktcode: 179445 | Transistoren > Transistoren P-Kanal-Feld | Produkt ist nicht verfügbar | ||||||||||||||||||
SQD40P10-40L_GE3 | Vishay | Trans MOSFET P-CH 100V 38A Automotive 3-Pin(2+Tab) DPAK | auf Bestellung 1930 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD40P10-40L_GE3 | VISHAY | Description: VISHAY - SQD40P10-40L_GE3 - Leistungs-MOSFET, p-Kanal, 100 V, 38 A, 0.033 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 38A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.033ohm SVHC: To Be Advised | auf Bestellung 1900 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD40P10-40L_GE3 | Vishay Siliconix | Description: MOSFET P-CH 100V 38A TO252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD40P10-40L_GE3 | Vishay | Trans MOSFET P-CH 100V 38A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD45N05-20L-GE3 | Vishay Siliconix | Description: MOSFET N-CH 50V 50A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
SQD45N05-20L-GE3 | Vishay | Trans MOSFET N-CH 50V 50A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD45P03-12-GE3 | Vishay | Trans MOSFET P-CH 30V 50A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
SQD45P03-12-T4_GE3 | Vishay Siliconix | Description: MOSFET P-CH 30V 50A TO252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD45P03-12_GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -37A; 23W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -37A Power dissipation: 23W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 55.3nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
SQD45P03-12_GE3 | Vishay Siliconix | Description: MOSFET P-CH 30V 50A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3495 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 5921 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD45P03-12_GE3 | VISHAY | Description: VISHAY - SQD45P03-12_GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 50 A, 0.008 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 71W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.008ohm | auf Bestellung 7818 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD45P03-12_GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -37A; 23W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -37A Power dissipation: 23W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 55.3nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
SQD45P03-12_GE3 | Vishay Siliconix | Description: MOSFET P-CH 30V 50A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3495 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD45P03-12_GE3 | Vishay / Siliconix | MOSFET 30V 50A 71W AEC-Q101 Qualified | auf Bestellung 24471 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD45P03-12_GE3 | VISHAY | Description: VISHAY - SQD45P03-12_GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 50 A, 0.008 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 71W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.008ohm | auf Bestellung 7818 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD45P03-12_GE3 | Vishay | Trans MOSFET P-CH 30V 50A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50034E | Vishay | Trans MOSFET N-CH 60V 100A Automotive 3-Pin(2+Tab) TO-252AA T/R | auf Bestellung 1998 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD50034E | Vishay | Trans MOSFET N-CH 60V 100A Automotive 3-Pin(2+Tab) TO-252AA T/R | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50034EL_GE3 | VISHAY | Description: VISHAY - SQD50034EL_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0033 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Verlustleistung Pd: 107W Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 107W Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0033ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0033ohm | auf Bestellung 5050 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD50034EL_GE3 | Vishay | N-Channel MOSFET Automotive AEC-Q101 | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD50034EL_GE3 | Vishay / Siliconix | MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET | auf Bestellung 3512 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50034EL_GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 100A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 1074 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50034EL_GE3 | VISHAY | Description: VISHAY - SQD50034EL_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0033 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 107W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0033ohm SVHC: Lead (19-Jan-2021) | auf Bestellung 4947 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD50034EL_GE3 | Vishay | N-Channel MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50034EL_GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 100A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50034E_GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 100A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 3301 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50034E_GE3 | Vishay | Trans MOSFET N-CH 60V 100A Automotive 3-Pin(2+Tab) TO-252AA T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD50034E_GE3 | Vishay / Siliconix | MOSFETs Nch 60V Vds 20V Vgs TO-252 | auf Bestellung 40509 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50034E_GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 100A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50A100 | SANREX | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
SQD50A90 | SAMREX | MODULE | auf Bestellung 143 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD50A90 | SANREX | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
SQD50AA100 | SANREX | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
SQD50AB100 | SAMREX | MODULE | auf Bestellung 153 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD50AB100 | SanRex | 07+; | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD50AB100 | SANREX | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
SQD50AB100 | SanRex | 50A/1000V/GTR/1U | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD50AB90 | SANREX | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
SQD50B90 | SANREX | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
SQD50BB90 | SANREX | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
SQD50BB90 | SAMREX | MODULE | auf Bestellung 236 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD50BB90 | SANREX | J3-1 | auf Bestellung 19 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD50CB100 | SANREX | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
SQD50N02-04-GE3 | Vishay Siliconix | Description: MOSFET N-CH D-S 20V 50A TO252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N02-04-GE3 | Vishay | Trans MOSFET N-CH 20V 50A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N03-06P-GE3 | Vishay Siliconix | Description: MOSFET N-CH D-S 30V 50A TO252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N03-06P-GE3 | Vishay | Trans MOSFET N-CH 30V 50A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N03-09-GE3 | Vishay Siliconix | Description: MOSFET N-CH D-S 30V 50A TO252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N03-09-GE3 | Vishay | Trans MOSFET N-CH 30V 50A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N03-3M1L-GE3 | Vishay Siliconix | Description: MOSFET N-CH D-S 30V 50A TO252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N03-4M0L-GE3 | Vishay | Trans MOSFET N-CH 30V 50A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N04-09H-GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 50A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N04-09H-GE3 | Vishay | Trans MOSFET N-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N04-3M5L_GE3 | Vishay | Trans MOSFET N-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N04-4M5L-GE3 | Vishay | Trans MOSFET N-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N04-4M5L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 50A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N04-4M5L_GE3 | VISHAY | Description: VISHAY - SQD50N04-4M5L_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 50 A, 0.003 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.003ohm SVHC: To Be Advised | auf Bestellung 7281 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD50N04-4M5L_GE3 | Vishay | Trans MOSFET N-CH 40V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N04-4M5L_GE3 | Vishay Semiconductors | MOSFETs RECOMMENDED ALT SQD100N04-3M6LGE | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N04-4M5L_GE3 | Vishay | Trans MOSFET N-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N04-4M5L_GE3 | VISHAY | Description: VISHAY - SQD50N04-4M5L_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 50 A, 0.003 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.003ohm SVHC: To Be Advised | auf Bestellung 7281 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD50N04-4M5L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 50A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N04-4M5L_GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 136W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 136W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 85nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N04-4M5L_GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 136W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 136W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 85nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N04-5M6-GE3 | Vishay | Automotive N-Channel 40 V (D-S) 175 degreeC MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N04-5M6-GE3 | Vishay / Siliconix | MOSFET RECOMMENDED ALT 78-SQD50N04-5M6_GE3 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N04-5M6-T4GE3 | Vishay / Siliconix | MOSFET RECOMMENDED ALT 78-SQD50N04-5M6T4GE | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N04-5M6-T4GE3 | Vishay | P-Channel Power MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N04-5M6L_GE3 | Vishay / Siliconix | MOSFETs N Ch 40Vds 20Vgs AEC-Q101 Qualified | auf Bestellung 19989 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50N04-5M6L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 50A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50N04-5M6L_GE3 | VISHAY | Description: VISHAY - SQD50N04-5M6L_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 50 A, 0.0043 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 71W Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 71W Bauform - Transistor: TO-252AA Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0043ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0043ohm SVHC: Boric acid (14-Jun-2023) | auf Bestellung 949 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD50N04-5M6L_GE3 | Vishay | Automotive AEC-Q101 N-Channel 40 V (D-S) 175 degreeC MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N04-5M6L_GE3 | Vishay | Automotive N-Channel 40 V (D-S) 175 degreeC MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N04-5M6L_GE3 | VISHAY | Description: VISHAY - SQD50N04-5M6L_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 50 A, 0.0043 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 71W Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0043ohm SVHC: Boric acid (14-Jun-2023) | auf Bestellung 949 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD50N04-5M6L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 50A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4133 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50N04-5M6_GE3 | VISHAY | Description: VISHAY - SQD50N04-5M6_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 50 A, 0.0046 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 71W Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0046ohm SVHC: Boric acid (14-Jun-2023) | auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD50N04-5m6_GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 50A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N04-5m6_GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 50A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N04-5M6_GE3 | VISHAY | Description: VISHAY - SQD50N04-5M6_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 50 A, 0.0046 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 71W Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 71W Bauform - Transistor: TO-252AA Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET Series productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0046ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0046ohm SVHC: Boric acid (14-Jun-2023) | auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD50N04-5m6_GE3 | Vishay Semiconductors | MOSFETs N-Channel 40V AEC-Q101 Qualified | auf Bestellung 1949 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50N04-5m6_T4GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 50A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 42117 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50N04-5m6_T4GE3 | Vishay Semiconductors | MOSFETs 40V 50A 71W AEC-Q101 Qualified | auf Bestellung 1665 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50N04-5m6_T4GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 50A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 20A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50N04_4M5LT4GE3 | Vishay / Siliconix | MOSFETs 40V Vds 20V Vgs TO-252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N04_4M5LT4GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 50A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N05-11L-GE3 | Vishay | Trans MOSFET N-CH 50V 50A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N05-11L-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 32A; 75W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 32A Power dissipation: 75W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 34.6nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N05-11L-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 32A; 75W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 32A Power dissipation: 75W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 34.6nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N05-11L-GE3 | Vishay / Siliconix | MOSFET RECOMMENDED ALT 78-SQD50N05-11L_GE3 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N05-11L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 50V 50A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 45A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2106 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N05-11L_GE3 | VISHAY | Description: VISHAY - SQD50N05-11L_GE3 - Leistungs-MOSFET, n-Kanal, 50 V, 50 A, 0.009 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 75W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.009ohm | auf Bestellung 9407 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD50N05-11L_GE3 | Vishay / Siliconix | MOSFET 50V 50A 75W AEC-Q101 Qualified | auf Bestellung 7938 Stücke: Lieferzeit 306-310 Tag (e) |
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SQD50N05-11L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 50V 50A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 45A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2106 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N05-11L_GE3 | VISHAY | Description: VISHAY - SQD50N05-11L_GE3 - Leistungs-MOSFET, n-Kanal, 50 V, 50 A, 0.009 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 75W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.009ohm | auf Bestellung 9807 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD50N06-07L-GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 50A TO252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N06-07L-GE3 | Vishay | Trans MOSFET N-CH 60V 50A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N06-09L-GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 50A TO252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N06-09L-GE3 | Vishay | Trans MOSFET N-CH 60V 50A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N06-09L-GE3 | Vishay / Siliconix | MOSFETs RECOMMENDED ALT SQD50N06-09L_GE3 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N06-09L_GE3 | Vishay | Trans MOSFET N-CH 60V 50A Automotive 3-Pin(2+Tab) DPAK T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD50N06-09L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 50A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3065 pF @ 25 V | auf Bestellung 4315 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50N06-09L_GE3 | Vishay Semiconductors | MOSFETs 60V 50A 136W AEC-Q101 Qualified | auf Bestellung 40473 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50N06-09L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 50A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3065 pF @ 25 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50N06-15L-GE3 | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
SQD50N10-8M9L-GE3 | Vishay | Trans MOSFET N-CH 100V 50A | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N10-8M9L-GE3 | Vishay | Trans MOSFET N-CH 100V 50A | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N10-8M9L-GE3 | Vishay | Trans MOSFET N-CH 100V 50A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N10-8M9L-GE3 | Vishay | Trans MOSFET N-CH 100V 50A | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N10-8m9L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 50A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50N10-8m9L_GE3 | Vishay Semiconductors | MOSFETs 100V 50A 45watt AEC-Q101 Qualified | auf Bestellung 22408 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50N10-8M9L_GE3 | Vishay | Trans MOSFET N-CH 100V 50A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50N10-8m9L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 50A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 15A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 7760 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P03-07-GE3 | Vishay / Siliconix | MOSFET RECOMMENDED ALT 78-SQD50P03-07_GE3 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P03-07-T4_GE3 | Vishay Siliconix | Description: MOSFET P-CH 30V 50A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P03-07-T4_GE3 | Vishay / Siliconix | MOSFET -30V Vds 20V Vgs TO-252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P03-07_GE3 | VISHAY | Description: VISHAY - SQD50P03-07_GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 50 A, 0.005 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 136W Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-252AA Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET Series productTraceability: No Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.005ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.005ohm SVHC: Boric acid (14-Jun-2023) | auf Bestellung 1913 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD50P03-07_GE3 | VISHAY | Description: VISHAY - SQD50P03-07_GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 50 A, 0.005 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET Series productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.005ohm SVHC: Boric acid (14-Jun-2023) | auf Bestellung 1913 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD50P03-07_GE3 | Vishay Siliconix | Description: MOSFET P-CH 30V 50A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P03-07_GE3 | Vishay | Trans MOSFET P-CH 30V 50A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P03-07_GE3 | Vishay Siliconix | Description: MOSFET P-CH 30V 50A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P03-07_GE3 | Vishay Semiconductors | MOSFET P-Channel 30V AEC-Q101 Qualified | auf Bestellung 4391 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P03-07_GE3 | Vishay | Trans MOSFET P-CH 30V 50A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P04-09L-GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 50A TO252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P04-09L-GE3 | Vishay / Siliconix | MOSFET RECOMMENDED ALT 78-SQD50P04-09L_GE3 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P04-09L-GE3 | Vishay | Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P04-09L_GE3 | Vishay / Siliconix | MOSFET 40V 50A 136W AEC-Q101 Qualified | auf Bestellung 25662 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P04-09L_GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 50A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V | auf Bestellung 9679 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P04-09L_GE3 | Vishay | Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P04-09L_GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 50A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P04-09L_T4GE3 | Vishay | Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) TO-252AA T/R | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P04-09L_T4GE3 | Vishay / Siliconix | MOSFET -40V Vds 20V Vgs TO-252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P04-09L_T4GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 50A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P04-13L-GE3 | Vishay / Siliconix | MOSFET RECOMMENDED ALT 78-SQD50P04-13L_GE3 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P04-13L-GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 50A TO252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P04-13L_GE3 | Vishay | Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P04-13L_GE3 | Vishay | Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD50P04-13L_GE3 | Vishay | Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R | auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD50P04-13L_GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 50A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 20 V | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P04-13L_GE3 | Vishay | Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P04-13L_GE3 | Vishay / Siliconix | MOSFETs 40V 50A 83W AEC-Q101 Qualified | auf Bestellung 13872 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P04-13L_GE3 | Vishay | Trans MOSFET P-CH 40V 50A Automotive 3-Pin(2+Tab) DPAK T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD50P04-13L_GE3 Produktcode: 185273 | Transistoren > Transistoren P-Kanal-Feld | Produkt ist nicht verfügbar | ||||||||||||||||||
SQD50P04-13L_GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 50A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P04-13L_T4GE3 | Vishay Siliconix | Description: P-CHANNEL 40-V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 25 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P04-13L_T4GE3 | Vishay / Siliconix | MOSFETs P-CHANNEL 40-V (D-S) 175C MOSFET | auf Bestellung 54061 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P04-13L_T4GE3 | Vishay Siliconix | Description: P-CHANNEL 40-V (D-S) 175C MOSFET Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 25 V | auf Bestellung 5053 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P06-15L-GE3 | Vishay / Siliconix | MOSFET RECOMMENDED ALT 78-SQD50P06-15L_GE3 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P06-15L-GE3 | Vishay | Trans MOSFET P-CH 60V 50A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P06-15L_GE3 | Vishay | Trans MOSFET P-CH 60V 50A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P06-15L_GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -200A; 45W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -50A Pulsed drain current: -200A Power dissipation: 45W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P06-15L_GE3 | Vishay | Trans MOSFET P-CH 60V 50A Automotive 3-Pin(2+Tab) TO-252AA | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD50P06-15L_GE3 | Vishay Siliconix | Description: MOSFET P-CH 60V 50A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 25 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P06-15L_GE3 | Vishay / Siliconix | MOSFET 60V 50A 136W AEC-Q101 Qualified | auf Bestellung 15178 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P06-15L_GE3 | Vishay | Trans MOSFET P-CH 60V 50A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P06-15L_GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -50A; Idm: -200A; 45W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -50A Pulsed drain current: -200A Power dissipation: 45W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P06-15L_GE3 | Vishay Siliconix | Description: MOSFET P-CH 60V 50A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 25 V | auf Bestellung 5359 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P06-15L_T4GE3 | Vishay Siliconix | Description: P-CHANNEL 60-V (D-S) 175C MOSFET Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 25 V | auf Bestellung 2950 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P06-15L_T4GE3 | Vishay / Siliconix | MOSFET P-CHANNEL 60-V (D-S) 175C MOSFET | auf Bestellung 27586 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P06-15L_T4GE3 | Vishay Siliconix | Description: P-CHANNEL 60-V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 25 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P06-15L_T4GE3 | Vishay | Automotive P Channel 60 V D S 175 Degree MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P08-25L | Vishay | Транз. Пол. БМ TO-252-3 MOSFET P-channel 80 V; 50 A; Pmax=136 W AEC-Q101 | auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD50P08-25L_GE3 | VISHAY | Description: VISHAY - SQD50P08-25L_GE3 - Leistungs-MOSFET, p-Kanal, 80 V, 50 A, 0.02 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm SVHC: To Be Advised | auf Bestellung 5935 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD50P08-25L_GE3 | Vishay Siliconix | Description: MOSFET P-CH 80V 50A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 10.5A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 12996 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P08-25L_GE3 | Vishay | Trans MOSFET P-CH 80V 50A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P08-25L_GE3 | VISHAY | Description: VISHAY - SQD50P08-25L_GE3 - Leistungs-MOSFET, p-Kanal, 80 V, 50 A, 0.02 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm SVHC: To Be Advised | auf Bestellung 5935 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD50P08-25L_GE3 | Vishay Siliconix | Description: MOSFET P-CH 80V 50A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 10.5A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5350 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P08-25L_GE3 | Vishay / Siliconix | MOSFET 80V 50A 136W AEC-Q101 Qualified | auf Bestellung 15906 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
SQD50P08-28-T4_GE3 | Vishay / Siliconix | MOSFET -80V Vds 20V Vgs TO-252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P08-28-T4_GE3 | Vishay Siliconix | Description: MOSFET P-CH 80V 48A TO252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P08-28_GE3 | Vishay Siliconix | Description: MOSFET P-CH 80V 48A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 12.5A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6035 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 6833 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P08-28_GE3 | Vishay Siliconix | Description: MOSFET P-CH 80V 48A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 12.5A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6035 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD50P08-28_GE3 | VISHAY | Description: VISHAY - SQD50P08-28_GE3 - Leistungs-MOSFET, p-Kanal, 80 V, 48 A, 0.023 ohm, TO-252AA, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 48A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-252AA Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.023ohm SVHC: To Be Advised | auf Bestellung 16758 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD50P08-28_GE3 | VISHAY | SQD50P08-28-GE3 SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
SQD50P08-28_GE3 | Vishay / Siliconix | MOSFET P-Channel 80V AEC-Q101 Qualified | auf Bestellung 14881 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
SQD50P08-28_GE3 | Vishay | Trans MOSFET P-CH 80V 48A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD65BA78 | auf Bestellung 49 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
SQD65BB75 | SANREX | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
SQD65BB75 | SanRex | 65A/750V/GTR/1U | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD65BB75 | SANSHA | 65A/400V/GTR | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD65BB75 | SanRex | 07+; | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD65BB75 | SANREX | H3-8 | auf Bestellung 32 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD70140EL_GE3 | Vishay | Trans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) TO-252AA | auf Bestellung 128 Stücke: Lieferzeit 14-21 Tag (e) |
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SQD70140EL_GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 30A TO252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD70140EL_GE3 | VISHAY | Description: VISHAY - SQD70140EL_GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 30 A, 0.012 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 71W Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 71W Bauform - Transistor: TO-252 (DPAK) Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.012ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.012ohm SVHC: No SVHC (19-Jan-2021) | auf Bestellung 1584 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD70140EL_GE3 | Vishay / Siliconix | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | auf Bestellung 13883 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD70140EL_GE3 | Vishay | Trans MOSFET N-CH 100V 30A Automotive 3-Pin(2+Tab) TO-252AA | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
SQD70140EL_GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 30A TO252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD70AB90 | SANREX | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
SQD70BB90 | SanRex | 07+; | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD70BB90 | SANREX | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
SQD70BB90 | SanRex | 70A/900V/GTR/1U | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQD90P04-9M4L-GE3 | Vishay / Siliconix | MOSFET RECOMMENDED ALT SQD90P04-9M4L_GE3 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD90P04-9M4L_GE3 | Vishay | Trans MOSFET P-CH 40V 90A Automotive 3-Pin(2+Tab) TO-252AA | Produkt ist nicht verfügbar | |||||||||||||||||
SQD90P04-9m4L_GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 90A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD90P04-9m4L_GE3 | Vishay / Siliconix | MOSFET P-Channel 40V AEC-Q101 Qualified | auf Bestellung 10339 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD90P04-9m4L_GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 90A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 951 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD90P04_9M4LT4GE3 | Vishay / Siliconix | MOSFET -40V Vds 20V Vgs TO-252 | Produkt ist nicht verfügbar | |||||||||||||||||
SQD97N06-6m3L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 97A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6060 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD97N06-6m3L_GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 97A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 25A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6060 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 3348 Stücke: Lieferzeit 10-14 Tag (e) |
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SQD97N06-6M3L_GE3 | Vishay | Trans MOSFET N-CH 60V 97A Automotive 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | |||||||||||||||||
SQD97N06-6m3L_GE3 | Vishay / Siliconix | MOSFETs 60V 97A 136W AEC-Q101 Qualified | auf Bestellung 71357 Stücke: Lieferzeit 10-14 Tag (e) |
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