Produkte > SQA
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
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SQA-0180-01-SMA-02 | Midwest Microwave / Cinch Connectivity Solutions | Attenuators - Interconnects SPACE QUAL ATTENUATR 01dB LEVEL C | Produkt ist nicht verfügbar | |||||||||||||||
SQA-0180-02-SMA-02 | Midwest Microwave / Cinch Connectivity Solutions | Attenuators - Interconnects SPACE QUAL ATTENUATR 02 dB LEVEL C | Produkt ist nicht verfügbar | |||||||||||||||
SQA-0180-03-SMA-02 | Midwest Microwave / Cinch Connectivity Solutions | Attenuators - Interconnects SPACE QUAL ATTENUATR 03 dB LEVEL C | Produkt ist nicht verfügbar | |||||||||||||||
SQA-0180-06-SMA-02 | Midwest Microwave / Cinch Connectivity Solutions | Attenuators - Interconnects SPACE QUAL ATTENUATR 06 dB LEVEL C | Produkt ist nicht verfügbar | |||||||||||||||
SQA-0180-10-SMA-02 | Midwest Microwave / Cinch Connectivity Solutions | Attenuators - Interconnects SPACE QUAL ATTENUATR 10 dB LEVEL C | Produkt ist nicht verfügbar | |||||||||||||||
SQA-0180-20-SMA-02 | Midwest Microwave / Cinch Connectivity Solutions | Attenuators - Interconnects SPACE QUAL ATTENUATR 20 dB LEVEL C | Produkt ist nicht verfügbar | |||||||||||||||
SQA-0181-01-SMA-02 | Midwest Microwave / Cinch Connectivity Solutions | Attenuators - Interconnects SPACE QUAL ATTENUATR 01 dB LEVEL B | Produkt ist nicht verfügbar | |||||||||||||||
SQA-0181-02-SMA-02 | Midwest Microwave / Cinch Connectivity Solutions | Attenuators - Interconnects SPACE QUAL ATTENUATR 02 dB LEVEL B | Produkt ist nicht verfügbar | |||||||||||||||
SQA-0181-03-SMA-02 | Midwest Microwave / Cinch Connectivity Solutions | Attenuators - Interconnects SPACE QUAL ATTENUATR 03 dB LEVEL B | Produkt ist nicht verfügbar | |||||||||||||||
SQA-0181-06-SMA-02 | Midwest Microwave / Cinch Connectivity Solutions | Attenuators - Interconnects SPACE QUAL ATTENUATR 06 dB LEVEL B | Produkt ist nicht verfügbar | |||||||||||||||
SQA-0181-06-SMA-02 | Cinch Connectivity Solutions Midwest Microwave | Description: SPACE QUALIFIED ATTENUATOR, 06 D | Produkt ist nicht verfügbar | |||||||||||||||
SQA-0181-10-SMA-02 | Midwest Microwave / Cinch Connectivity Solutions | Attenuators - Interconnects SPACE QUAL ATTENUATR 10 dB LEVEL B | Produkt ist nicht verfügbar | |||||||||||||||
SQA-0181-20-SMA-02 | Midwest Microwave / Cinch Connectivity Solutions | Attenuators - Interconnects SPACE QUAL ATTENUATR 20 dB LEVEL B | Produkt ist nicht verfügbar | |||||||||||||||
SQA-0182-01-SMA-02 | Cinch Connectivity Solutions Midwest Microwave | Description: SPACE QUALIFIED ATTENUATOR, 01 D Packaging: Box Power (Watts): 2W Package / Case: SMA In-Line Module Attenuation Value: 1dB Part Status: Active Frequency Range: 0 Hz ~ 18 GHz | auf Bestellung 48 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA-0182-01-SMA-02 | Midwest Microwave / Cinch Connectivity Solutions | Attenuators - Interconnects SPACE QUAL ATTENUATR 01 dB LEVEL A | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA-0182-02-SMA-02 | Midwest Microwave / Cinch Connectivity Solutions | Attenuators - Interconnects SPACE QUAL ATTENUATR 02 dB LEVEL A | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA-0182-02-SMA-02 | Cinch Connectivity Solutions Midwest Microwave | Description: SPACE QUALIFIED ATTENUATOR, 02 D Packaging: Box Power (Watts): 2W Package / Case: SMA In-Line Module Attenuation Value: 2dB Part Status: Active Frequency Range: 0 Hz ~ 18 GHz | auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA-0182-03-SMA-02 | Midwest Microwave / Cinch Connectivity Solutions | Attenuators - Interconnects SPACE QUAL ATTENUATR 03 dB LEVEL A | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA-0182-03-SMA-02 | Cinch Connectivity Solutions Midwest Microwave | Description: SPACE QUALIFIED ATTENUATOR, 03 D | auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA-0182-06-SMA-02 | Midwest Microwave / Cinch Connectivity Solutions | Attenuators - Interconnects SPACE QUAL ATTENUATR 06 dB LEVEL A | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA-0182-10-SMA-02 | Midwest Microwave / Cinch Connectivity Solutions | Attenuators - Interconnects SPACE QUAL ATTENUATR 10 dB LEVEL A | Produkt ist nicht verfügbar | |||||||||||||||
SQA-0182-10-SMA-02 | Cinch Connectivity Solutions Midwest Microwave | Description: SPACE QUALIFIED ATTENUATOR, 10 D Packaging: Box Power (Watts): 2W Package / Case: SMA In-Line Module Attenuation Value: 10dB Part Status: Active Frequency Range: 0 Hz ~ 18 GHz | auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA-0182-20-SMA-02 | Midwest Microwave / Cinch Connectivity Solutions | Attenuators - Interconnects SPACE QUAL ATTENUATR 20 dB LEVEL A | auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA000001 | Diodes Incorporated | Description: XTAL OSC XO 100.0000MHZ HCSL SMD Packaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Mounting Type: Surface Mount Output: HCSL Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 3.3V Current - Supply (Max): 40mA Height - Seated (Max): 0.053" (1.35mm) Frequency: 100 MHz Base Resonator: Crystal | auf Bestellung 1052 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA000001 | Diodes Inc. / Pericom | Standard Clock Oscillators 100 MHz, 3.3V 50 ppm, HCSL | auf Bestellung 310 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
SQA000001 | Diodes Incorporated | Description: XTAL OSC XO 100.0000MHZ HCSL SMD Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Mounting Type: Surface Mount Output: HCSL Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 3.3V Current - Supply (Max): 40mA Height - Seated (Max): 0.053" (1.35mm) Frequency: 100 MHz Base Resonator: Crystal | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA000001 | Diodes Inc | Oscillator XO 100MHz ±50ppm 2pF HCSL 55% 3.3V 6-Pin SMD T/R | Produkt ist nicht verfügbar | |||||||||||||||
SQA000002 | Pericom | Description: OSC XO 100.000MHZ HCSL SMD | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
SQA0R | auf Bestellung 14936 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SQA250AA80 | SanRex | 250A/800V/SCR/1U | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
SQA300CEJW-T1_GE3 | Vishay / Siliconix | MOSFET Automotive N-Channel 30 V (D-S) 175C MOSFET PowerPAK SC-70W, 33 mohm a. 10V , 54 mohm a. 4.5V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA310CEJW-T1_GE3 | Vishay / Siliconix | MOSFET Automotive N-Channel 30 V (D-S) 175C MOSFET PowerPAK SC-70W, 19 mohm a. 10V, 32 mohm a. 4.5V | auf Bestellung 5980 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA401CEJW-T1_GE3 | Vishay Semiconductors | MOSFET P-CHANNEL 20-V (D-S) 175C MOSFET | auf Bestellung 41895 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA401CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE P-CHANNEL 20 V (D-S) | Produkt ist nicht verfügbar | |||||||||||||||
SQA401CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE P-CHANNEL 20 V (D-S) | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA401EEJ-T1_GE3 | VISHAY | Description: VISHAY - SQA401EEJ-T1_GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 2.68 A, 0.093 ohm, PowerPAK SC-70, Oberflächenmontage tariffCode: 85412900 Transistormontage: 0 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.68A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 13.6W Bauform - Transistor: PowerPAK SC-70 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 0 Drain-Source-Durchgangswiderstand: 0.093ohm SVHC: To Be Advised | auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA401EEJ-T1_GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.55A; 4.5W; PowerPAK® SC70 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.55A Power dissipation: 4.5W Case: PowerPAK® SC70 Gate-source voltage: ±8V On-state resistance: 113mΩ Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SQA401EEJ-T1_GE3 | Vishay / Siliconix | MOSFET -20V Vds; +/-8V Vgs PowerPAK SC-70-6L | auf Bestellung 23484 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA401EEJ-T1_GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.55A; 4.5W; PowerPAK® SC70 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.55A Power dissipation: 4.5W Case: PowerPAK® SC70 Gate-source voltage: ±8V On-state resistance: 113mΩ Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
SQA401EEJ-T1_GE3 | VISHAY | Description: VISHAY - SQA401EEJ-T1_GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 2.68 A, 0.093 ohm, PowerPAK SC-70, Oberflächenmontage tariffCode: 85412900 Transistormontage: 0 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.68A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 13.6W Bauform - Transistor: PowerPAK SC-70 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 0 Drain-Source-Durchgangswiderstand: 0.093ohm SVHC: To Be Advised | auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA401EJ-T1_GE3 | VISHAY | Description: VISHAY - SQA401EJ-T1_GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 3.75 A, 0.085 ohm, PowerPAK SC70, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20 Dauer-Drainstrom Id: 3.75 Rds(on)-Messspannung Vgs: 4.5 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 13.6 Bauform - Transistor: PowerPAK SC70 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 6 Produktpalette: TrenchFET Wandlerpolarität: p-Kanal Betriebswiderstand, Rds(on): 0.085 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 1 SVHC: No SVHC (19-Jan-2021) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA401EJ-T1_GE3 | Vishay / Siliconix | MOSFET -20V PowerPAK SC-70 AEC-Q101 Qualified | auf Bestellung 2986 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA401EJ-T1_GE3 | Vishay | P-CHANNEL 20-V (D-S) 175C MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SQA401EJ-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 3.75A SC70-6 | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
SQA403EJ-T1_GE3 | Vishay | Trans MOSFET P-CH 30V 10A Automotive 6-Pin PowerPAK SC-70 EP T/R | Produkt ist nicht verfügbar | |||||||||||||||
SQA403EJ-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CH 30V 10A PPAK SC70-6 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA403EJ-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CH 30V 10A PPAK SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 15480 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA403EJ-T1_GE3 | VISHAY | Description: VISHAY - SQA403EJ-T1_GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 10 A, 0.016 ohm, PowerPAK SC70, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 10 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 13.6 Bauform - Transistor: PowerPAK SC70 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 6 Produktpalette: TrenchFET Wandlerpolarität: p-Kanal Betriebswiderstand, Rds(on): 0.016 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 2 SVHC: No SVHC (19-Jan-2021) | Produkt ist nicht verfügbar | |||||||||||||||
SQA403EJ-T1_GE3 | Vishay / Siliconix | MOSFET -30V Vds 20V Vgs PowerPAK SC-70 | auf Bestellung 40482 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA405CEJW | Vishay | SQA405CEJW | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA405CEJW-T1_GE3 | VISHAY | SQA405CEJW-T1-GE3 SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
SQA405CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE P-CHANNEL 40 V (D-S) Packaging: Tape & Reel (TR) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 39.5mOhm @ 5A, 10V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA405CEJW-T1_GE3 | Vishay | P-Channel MOSFET Automotive AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA405CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE P-CHANNEL 40 V (D-S) Packaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 39.5mOhm @ 5A, 10V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V | auf Bestellung 3025 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA405EJ-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 10A PPAK SC70-6 | auf Bestellung 2494 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA405EJ-T1_GE3 | Vishay | Trans MOSFET P-CH 40V 10A Automotive AEC-Q101 6-Pin PowerPAK SC-70 EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA405EJ-T1_GE3 | VISHAY | Description: VISHAY - SQA405EJ-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 10 A, 0.027 ohm, PowerPAK SC-70, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 13.6W Bauform - Transistor: PowerPAK SC-70 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.027ohm SVHC: To Be Advised | auf Bestellung 8665 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA405EJ-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 10A PPAK SC70-6 | Produkt ist nicht verfügbar | |||||||||||||||
SQA405EJ-T1_GE3 | Vishay Semiconductors | MOSFET -40V Vds 20V Vgs PowerPAK SC-70 | auf Bestellung 59613 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA405EJ-T1_GE3 | VISHAY | Description: VISHAY - SQA405EJ-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 10 A, 0.027 ohm, PowerPAK SC-70, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 13.6W Bauform - Transistor: PowerPAK SC-70 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.027ohm SVHC: To Be Advised | auf Bestellung 8665 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA407CEJW-T1_GE3 | Vishay Semiconductors | MOSFETs Automotive P-Channel 20V (D-S) 175C MOSFET 1GmO 10V mO 7.5V 25mO 4.5V | auf Bestellung 5135 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA407CEJW-T1_GE3 | VISHAY | Description: VISHAY - SQA407CEJW-T1_GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 9 A, 0.0202 ohm, PowerPAK SC-70W, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.3V euEccn: NLR Verlustleistung: 13.6W Bauform - Transistor: PowerPAK SC-70W Anzahl der Pins: 7Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0202ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 5995 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA407CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE P-CHANNEL 20 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5890 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA407CEJW-T1_GE3 | VISHAY | Description: VISHAY - SQA407CEJW-T1_GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 9 A, 0.0202 ohm, PowerPAK SC-70W, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.3V euEccn: NLR Verlustleistung: 13.6W Bauform - Transistor: PowerPAK SC-70W Anzahl der Pins: 7Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0202ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 5995 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA407CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE P-CHANNEL 20 V (D-S) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4.5A, 4.5V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA409CEJW | Vishay | SQA409CEJW | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA409CEJW | Vishay | SQA409CEJW | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA409CEJW-T1_GE3 | VISHAY | Description: VISHAY - SQA409CEJW-T1_GE3 - Leistungs-MOSFET, p-Kanal, 12 V, 9 A, 0.0142 ohm, PowerPAK SC-70W, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 13.6W Bauform - Transistor: PowerPAK SC-70W Anzahl der Pins: 7Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0142ohm SVHC: Boric acid (14-Jun-2023) | auf Bestellung 2970 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA409CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE P-CHANNEL 12 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 6 V | auf Bestellung 2944 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA409CEJW-T1_GE3 | Vishay / Siliconix | MOSFETs | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA409CEJW-T1_GE3 | VISHAY | Description: VISHAY - SQA409CEJW-T1_GE3 - Leistungs-MOSFET, p-Kanal, 12 V, 9 A, 0.0142 ohm, PowerPAK SC-70W, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 13.6W Bauform - Transistor: PowerPAK SC-70W Anzahl der Pins: 7Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0142ohm SVHC: Boric acid (14-Jun-2023) | auf Bestellung 2970 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA409CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE P-CHANNEL 12 V (D-S) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||
SQA410CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 20 V (D-S) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 10 V | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA410CEJW-T1_GE3 | Vishay Semiconductors | MOSFET 20v 7.8amp AEC-Q101 | auf Bestellung 27630 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA410CEJW-T1_GE3 | VISHAY | Description: VISHAY - SQA410CEJW-T1_GE3 - Leistungs-MOSFET, n-Kanal, 20 V, 7.8 A, 0.021 ohm, PowerPAK SC-70W, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 7.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 13.6W Bauform - Transistor: PowerPAK SC-70W Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.021ohm SVHC: To Be Advised | auf Bestellung 52410 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA410CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 20 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 10 V | auf Bestellung 9003 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA410CEJW-T1_GE3 | VISHAY | Description: VISHAY - SQA410CEJW-T1_GE3 - Leistungs-MOSFET, n-Kanal, 20 V, 7.8 A, 0.021 ohm, PowerPAK SC-70W, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 7.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 13.6W Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 13.6W Bauform - Transistor: PowerPAK SC-70W Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.021ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.021ohm SVHC: To Be Advised | auf Bestellung 52410 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA410EJ-T1_GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 7.8A SC70-6 | Produkt ist nicht verfügbar | |||||||||||||||
SQA410EJ-T1_GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 7.8A SC70-6 | auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA410EJ-T1_GE3 | Vishay / Siliconix | MOSFET 20V 7.8A 13.6W AEC-Q101 Qualified | auf Bestellung 212021 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA411CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE P-CHANNEL 60 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.46A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 3.5A, 10V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V | auf Bestellung 5156 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA411CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE P-CHANNEL 60 V (D-S) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.46A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 3.5A, 10V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA411CEJW-T1_GE3 | Vishay Semiconductors | MOSFET | auf Bestellung 4837 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA411CEJW-T1_GE3 | VISHAY | SQA411CEJW-T1-GE3 SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
SQA413CEJW-T1_GE3 | Vishay Semiconductors | MOSFET | auf Bestellung 36142 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA413CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE P-CHANNEL 20 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 4.5V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 8065 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA413CEJW-T1_GE3 | VISHAY | SQA413CEJW-T1-GE3 SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
SQA413CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE P-CHANNEL 20 V (D-S) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 4.5V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA440CEJW | Vishay | N-Channel MOSFET Automotive AEC-Q101 | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA440CEJW | Vishay | N-Channel MOSFET Automotive AEC-Q101 | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA440CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 40 V (D-S) Packaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 5A, 10V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V | auf Bestellung 2050 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA440CEJW-T1_GE3 | Vishay Semiconductors | MOSFET N-CHANNEL 40-V (D-S) 175C MOSFET | auf Bestellung 1405 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA440CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 40 V (D-S) Packaging: Tape & Reel (TR) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 5A, 10V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SQA442EJ-T1_GE3 | Vishay / Siliconix | MOSFET 60V Vds; +/-20V Vgs PowerPAK SC-70-6L | auf Bestellung 41879 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA442EJ-T1_GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 9A PPAK SC70-6 | auf Bestellung 8889 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
SQA442EJ-T1_GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 9A PPAK SC70-6 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
SQA444CEJW-T1_GE3 | VISHAY | Description: VISHAY - SQA444CEJW-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 9 A, 0.0318 ohm, PowerPAK SC-70W, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 13.6W Bauform - Transistor: PowerPAK SC-70W Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0318ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 5540 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA444CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 60 V (D-S) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 4.5A, 10V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||
SQA444CEJW-T1_GE3 | VISHAY | Description: VISHAY - SQA444CEJW-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 9 A, 0.0318 ohm, PowerPAK SC-70W, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 13.6W Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 13.6W Bauform - Transistor: PowerPAK SC-70W Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0318ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0318ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 5540 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA444CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 60 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 4.5A, 10V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2574 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA444CEJW-T1_GE3 | Vishay Semiconductors | MOSFET N-CHANNEL 60-V (D-S) 175C MOSFET | auf Bestellung 28398 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA446CEJW-T1_GE3 | VISHAY | Description: VISHAY - SQA446CEJW-T1_GE3 - Leistungs-MOSFET, n-Kanal, 20 V, 9 A, 0.0142 ohm, PowerPAK SC-70W, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 13.6W Bauform - Transistor: PowerPAK SC-70W Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0142ohm SVHC: To Be Advised | auf Bestellung 62900 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA446CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 20 V (D-S) Packaging: Tape & Reel (TR) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 4.5A, 4.5V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA446CEJW-T1_GE3 | Vishay Semiconductors | MOSFET N-CHANNEL 20-V (D-S) 175C AEC-Q101 | auf Bestellung 56918 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA446CEJW-T1_GE3 | VISHAY | Description: VISHAY - SQA446CEJW-T1_GE3 - Leistungs-MOSFET, n-Kanal, 20 V, 9 A, 0.0142 ohm, PowerPAK SC-70W, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 13.6W Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 13.6W Bauform - Transistor: PowerPAK SC-70W Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0142ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0142ohm SVHC: To Be Advised | auf Bestellung 62900 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA446CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 20 V (D-S) Packaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 4.5A, 4.5V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 38713 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA470CEJW-T1_GE3 | Vishay Semiconductors | MOSFET N-CHANNEL 30-V (D-S) 175C MOSFET | auf Bestellung 20509 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA470CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 30 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 4754 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA470CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 30 V (D-S) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA470EEJ-T1_GE3 | Vishay | Trans MOSFET N-CH 30V 2.25A Automotive 6-Pin PowerPAK SC-70 EP T/R | Produkt ist nicht verfügbar | |||||||||||||||
SQA470EEJ-T1_GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 2.25A PPAK SC70 | auf Bestellung 127 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA470EEJ-T1_GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.25A; 13.6W; PowerPAK® SC70 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.25A Power dissipation: 13.6W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 56mΩ Mounting: SMD Gate charge: 4.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | Produkt ist nicht verfügbar | |||||||||||||||
SQA470EEJ-T1_GE3 | Vishay / Siliconix | MOSFET 30V Vds; +/-12V Vgs PowerPAK SC-70-6L | auf Bestellung 4480 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA470EEJ-T1_GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 2.25A PPAK SC70 | Produkt ist nicht verfügbar | |||||||||||||||
SQA470EEJ-T1_GE3 | Vishay | Trans MOSFET N-CH 30V 2.25A Automotive 6-Pin PowerPAK SC-70 EP T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQA470EEJ-T1_GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.25A; 13.6W; PowerPAK® SC70 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.25A Power dissipation: 13.6W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 56mΩ Mounting: SMD Gate charge: 4.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SQA470EJ-T1_GE3 | VISHAY | Description: VISHAY - SQA470EJ-T1_GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 2.25 A, 0.038 ohm, PowerPAK SC-70, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2.25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 13.6W Bauform - Transistor: PowerPAK SC-70 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.038ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 2291 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA470EJ-T1_GE3 | Vishay / Siliconix | MOSFET 30V PowerPAK SC-70 AEC-Q101 Qualified | auf Bestellung 3482 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
SQA470EJ-T1_GE3 | Vishay | N-CHANNEL 30-V (D-S) 175C MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SQA470EJ-T1_GE3 | VISHAY | Description: VISHAY - SQA470EJ-T1_GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 2.25 A, 0.038 ohm, PowerPAK SC-70, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2.25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 13.6W Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 13.6W Bauform - Transistor: PowerPAK SC-70 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.038ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.038ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 2291 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA470EJ-T1_GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 2.25A PPAK SC70 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Single Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 2988 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA470EJ-T1_GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 2.25A PPAK SC70 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.25A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Single Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 20 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||
SQA600CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 80 V (D-S) Packaging: Tape & Reel (TR) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 54.6mOhm @ 3A, 10V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA600CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 80 V (D-S) Packaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 54.6mOhm @ 3A, 10V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V | auf Bestellung 5840 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA600CEJW-T1_GE3 | Vishay Semiconductors | MOSFET N-CHANNEL 80-V (D-S) 175C MOSFET | auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA602CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 80 V (D-S) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.63A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 3A, 10V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA602CEJW-T1_GE3 | Vishay Semiconductors | MOSFETs Automotive N-Channel 80 V (D-S) 175C MOSFET , 94 mO 10V, 110 mO 4.5V | auf Bestellung 4489 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA602CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 80 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.63A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 3A, 10V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V | auf Bestellung 5830 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA604CEJW-T1_GE3 | Vishay Semiconductors | MOSFETs Automotive N-Channel 80 V (D-S) 175C MOSFET , 80 mO 10V, 95 mO 4.5V | auf Bestellung 2750 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA604CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 80 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.63A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2785 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA604CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 80 V (D-S) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.63A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||
SQA604CEJW-T1_GE3 | Vishay | Trans MOSFET N-CH 80V 5.63A Automotive AEC-Q101 T/R | Produkt ist nicht verfügbar | |||||||||||||||
SQA700CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 100 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 3A, 10V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V | auf Bestellung 11968 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA700CEJW-T1_GE3 | VISHAY | Description: VISHAY - SQA700CEJW-T1_GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 9 A, 0.056 ohm, PowerPAK SC-70W, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 13.6W Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 13.6W Bauform - Transistor: PowerPAK SC-70W Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.056ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.056ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 31880 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQA700CEJW-T1_GE3 | Vishay Semiconductors | MOSFET N-CHANNEL 100-V (D-S) 175C MOSFET | auf Bestellung 56736 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA700CEJW-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 100 V (D-S) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 3A, 10V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQA700CEJW-T1_GE3 | VISHAY | Description: VISHAY - SQA700CEJW-T1_GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 9 A, 0.056 ohm, PowerPAK SC-70W, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 13.6W Bauform - Transistor: PowerPAK SC-70W Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.056ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 31880 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SQAC0806-12NJ-RC | Allied Components International | Description: 12.3nH +/-5% Square Wound Coil Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: Nonstandard Size / Dimension: 0.076" L x 0.072" W (1.93mm x 1.83mm) Mounting Type: Surface Mount Shielding: Unshielded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 8mOhm Max Q @ Freq: 90 @ 400MHz Frequency - Self Resonant: 4.8GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.059" (1.50mm) Part Status: Active Inductance: 12 nH Current Rating (Amps): 2.9 A | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
SQAC0806-16NJ-RC | Allied Components International | Description: 15.7nH 5% Square Wound Coil Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: Nonstandard Size / Dimension: 0.090" L x 0.072" W (2.29mm x 1.83mm) Mounting Type: Surface Mount Shielding: Unshielded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 9mOhm Max Q @ Freq: 90 @ 400MHz Frequency - Self Resonant: 4.4GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.059" (1.50mm) Part Status: Active Inductance: 15.7 nH Current Rating (Amps): 2.9 A | auf Bestellung 89940 Stücke: Lieferzeit 10-14 Tag (e) |
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SQAC0806-19NG-RC | Allied Components International | Description: 19nH +/-2% Square Wound Coil Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: Nonstandard Size / Dimension: 0.102" L x 0.072" W (2.59mm x 1.83mm) Mounting Type: Surface Mount Shielding: Unshielded Type: Wirewound Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 10mOhm Max Q @ Freq: 90 @ 400MHz Frequency - Self Resonant: 4GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.059" (1.50mm) Part Status: Active Inductance: 19.4 nH Current Rating (Amps): 2.9 A | Produkt ist nicht verfügbar | |||||||||||||||
SQAC0806-19NJ-RC | Allied Components International | Description: 19.4nH 5% Square Wound Coil Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: Nonstandard Size / Dimension: 0.102" L x 0.072" W (2.59mm x 1.83mm) Mounting Type: Surface Mount Shielding: Unshielded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 10mOhm Max Q @ Freq: 90 @ 400MHz Frequency - Self Resonant: 4GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.059" (1.50mm) Part Status: Active Inductance: 19.4 nH Current Rating (Amps): 2.9 A | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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SQAC0806-5N5J-RC | Allied Components International | Description: 5.5nH 5% Square Wound Coil Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: Nonstandard Size / Dimension: 0.053" L x 0.072" W (1.35mm x 1.83mm) Mounting Type: Surface Mount Shielding: Unshielded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 3.4mOhm Max Q @ Freq: 60 @ 400MHz Frequency - Self Resonant: 4.9GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.059" (1.50mm) Part Status: Active Inductance: 5.5 nH Current Rating (Amps): 2.9 A | auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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SQAC0806-6N0J-RC | Allied Components International | Description: 6nH 5% Square Wound Coil Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: Nonstandard Size / Dimension: 0.051" L x 0.072" W (1.30mm x 1.83mm) Mounting Type: Surface Mount Shielding: Unshielded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 6mOhm Max Q @ Freq: 64 @ 400MHz Frequency - Self Resonant: 5.2GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.070" (1.78mm) Part Status: Active Inductance: 6 nH Current Rating (Amps): 2.9 A | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
SQAC0806-8N9J-RC | Allied Components International | Description: 8.9nH 5% Square Wound Coil Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: Nonstandard Size / Dimension: 0.064" L x 0.072" W (1.63mm x 1.83mm) Mounting Type: Surface Mount Shielding: Unshielded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 7mOhm Max Q @ Freq: 90 @ 400MHz Frequency - Self Resonant: 4.3GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.070" (1.78mm) Part Status: Active Inductance: 8.9 nH Current Rating (Amps): 2.9 A | auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
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SQAC0807-10NG-RC | Allied Components International | Description: 10.2nH +/-2% Square Air Coil Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: Nonstandard Size / Dimension: 0.064" L x 0.072" W (1.63mm x 1.83mm) Mounting Type: Surface Mount Shielding: Unshielded Type: Wirewound Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 7mOhm Max Q @ Freq: 100 @ 400MHz Frequency - Self Resonant: 4GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.070" (1.78mm) Part Status: Active Inductance: 10.2 nH Current Rating (Amps): 2.7 A | auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
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SQAC0807-10NJ-RC | Allied Components International | Description: 10.2nH 5% Square Air Coil Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: Nonstandard Size / Dimension: 0.064" L x 0.072" W (1.63mm x 1.83mm) Mounting Type: Surface Mount Shielding: Unshielded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 7mOhm Max Q @ Freq: 100 @ 400MHz Frequency - Self Resonant: 4GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.070" (1.78mm) Part Status: Active Inductance: 10 nH Current Rating (Amps): 2.7 A | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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SQAC0807-11NG-RC | Allied Components International | Description: 11.2nH +/-2% Square Air Coil Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: Nonstandard Size / Dimension: 0.061" L x 0.072" W (1.55mm x 1.83mm) Mounting Type: Surface Mount Shielding: Unshielded Type: Wirewound Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 6.3mOhm Max Q @ Freq: 90 @ 400MHz Frequency - Self Resonant: 3.6GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.070" (1.78mm) Part Status: Active Inductance: 11.2 nH Current Rating (Amps): 2.7 A | auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
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SQAC0807-11NJ-RC | Allied Components International | Description: 11.2nH 5% Square Air Coil Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: Nonstandard Size / Dimension: 0.061" L x 0.072" W (1.55mm x 1.83mm) Mounting Type: Surface Mount Shielding: Unshielded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 6.3mOhm Max Q @ Freq: 90 @ 400MHz Frequency - Self Resonant: 3.6GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.070" (1.78mm) Part Status: Active Inductance: 11 nH Current Rating (Amps): 2.7 A | auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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SQAC0807-14NG-RC | Allied Components International | Description: 13.7nH +/-2% Square Air Coil Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: Nonstandard Size / Dimension: 0.076" L x 0.072" W (1.93mm x 1.83mm) Mounting Type: Surface Mount Shielding: Unshielded Type: Wirewound Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 8mOhm Max Q @ Freq: 100 @ 400MHz Frequency - Self Resonant: 4.3GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.070" (1.78mm) Part Status: Active Inductance: 13.7 nH Current Rating (Amps): 2.7 A | auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
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SQAC0807-14NJ-RC | Allied Components International | Description: 13.7nH 5% Square Air Coil Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: Nonstandard Size / Dimension: 0.076" L x 0.072" W (1.93mm x 1.83mm) Mounting Type: Surface Mount Shielding: Unshielded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 8mOhm Max Q @ Freq: 100 @ 400MHz Frequency - Self Resonant: 4.3GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.070" (1.78mm) Part Status: Active Inductance: 13.7 nH Current Rating (Amps): 2.7 A | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
SQAC0807-17NG-RC | Allied Components International | Description: 17nH +/-2% Square Air Coil Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: Nonstandard Size / Dimension: 0.090" L x 0.072" W (2.29mm x 1.83mm) Mounting Type: Surface Mount Shielding: Unshielded Type: Wirewound Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 9mOhm Max Q @ Freq: 100 @ 400MHz Frequency - Self Resonant: 4GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.070" (1.78mm) Part Status: Active Inductance: 17 nH Current Rating (Amps): 2.7 A | auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
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SQAC0807-17NJ-RC | Allied Components International | Description: 17nH 5% Square Air Coil Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: Nonstandard Size / Dimension: 0.090" L x 0.072" W (2.29mm x 1.83mm) Mounting Type: Surface Mount Shielding: Unshielded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 9mOhm Max Q @ Freq: 100 @ 400MHz Frequency - Self Resonant: 4GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.070" (1.78mm) Part Status: Active Inductance: 17 nH Current Rating (Amps): 2.7 A | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
SQAC0807-22NG-RC | Allied Components International | Description: 22nH +/-2% Square Air Coil Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: Nonstandard Size / Dimension: 0.102" L x 0.072" W (2.59mm x 1.83mm) Mounting Type: Surface Mount Shielding: Unshielded Type: Wirewound Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 10mOhm Max Q @ Freq: 100 @ 400MHz Frequency - Self Resonant: 3.5GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.070" (1.78mm) Part Status: Active Inductance: 22 nH Current Rating (Amps): 2.7 A | auf Bestellung 21 Stücke: Lieferzeit 10-14 Tag (e) |
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SQAC0807-22NJ-RC | Allied Components International | Description: 22nH 5% Square Air Coil Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: Nonstandard Size / Dimension: 0.102" L x 0.072" W (2.59mm x 1.83mm) Mounting Type: Surface Mount Shielding: Unshielded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 10mOhm Max Q @ Freq: 100 @ 400MHz Frequency - Self Resonant: 3.5GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.070" (1.78mm) Part Status: Active Inductance: 22 nH Current Rating (Amps): 2.7 A | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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SQAC0807-6N9J-RC | Allied Components International | Description: 6.9nH 5% Square Air Coil Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: Nonstandard Size / Dimension: 0.051" L x 0.072" W (1.30mm x 1.83mm) Mounting Type: Surface Mount Shielding: Unshielded Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 6mOhm Max Q @ Freq: 100 @ 400MHz Frequency - Self Resonant: 4.6GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.070" (1.78mm) Part Status: Active Inductance: 6.9 nH Current Rating (Amps): 2.7 A | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
SQAC1515-47NG-RC | Allied Components International | Description: 47NH 2% SQ. AIR CORE INDUCTOR Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: Nonstandard Size / Dimension: 0.160" L x 0.140" W (4.06mm x 3.56mm) Mounting Type: Surface Mount Shielding: Unshielded Type: Wirewound Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 6.35mOhm Max Q @ Freq: 230 @ 400MHz Frequency - Self Resonant: 1.87GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.154" (3.91mm) Part Status: Active Inductance: 47 nH Current Rating (Amps): 4.9 A | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
SQAC1515-47NJ-RC | Allied Components International | Description: 47NH 5% SQ. AIR CORE INDUCTOR Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: Nonstandard Size / Dimension: 0.160" L x 0.140" W (4.06mm x 3.56mm) Mounting Type: Surface Mount Shielding: Unshielded Type: Wirewound Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 6.35mOhm Max Q @ Freq: 230 @ 400MHz Frequency - Self Resonant: 1.87GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.154" (3.91mm) Part Status: Active Inductance: 47 nH Current Rating (Amps): 4.9 A | auf Bestellung 18 Stücke: Lieferzeit 10-14 Tag (e) |
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SQAC1515-82NJ-RC | Allied Components International | Description: 82NH SMD AIR CORE INDUCTOR Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: Nonstandard Size / Dimension: 0.230" L x 0.140" W (5.84mm x 3.56mm) Mounting Type: Surface Mount Shielding: Unshielded Type: Wirewound Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 9.4mOhm Max Q @ Freq: 230 @ 400MHz Frequency - Self Resonant: 1.79GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.154" (3.91mm) Part Status: Active Inductance: 82 nH Current Rating (Amps): 5.6 A | auf Bestellung 31901 Stücke: Lieferzeit 10-14 Tag (e) |
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SQAC2222-161NJ-RC | Allied Components International | Description: 160NH 5% SQ. AIR CORE INDUCTOR Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: Nonstandard Size / Dimension: 0.290" L x 0.220" W (7.37mm x 5.59mm) Mounting Type: Surface Mount Shielding: Unshielded Type: Wirewound Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 8.25mOhm Max Q @ Freq: 140 @ 50MHz Frequency - Self Resonant: 1GHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.234" (5.95mm) Part Status: Active Inductance: 160 nH Current Rating (Amps): 5.7 A | Produkt ist nicht verfügbar | |||||||||||||||
SQAC2929-431NJ-RC | Allied Components International | Description: 430NH 5% SMD SQ. AIR CORE IND. | auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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SQAC2929-501NG-RC | Allied Components International | Description: 500nH +/-2% SMD Sq. Air Core Ind | Produkt ist nicht verfügbar | |||||||||||||||
SQAC2929-501NJ-RC | Allied Components International | Description: 500NH 5% SMD SQ. AIR CORE IND. Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: Nonstandard Size / Dimension: 0.551" L x 0.295" W (14.00mm x 7.49mm) Mounting Type: Surface Mount Shielding: Unshielded Type: Wirewound Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 16.5mOhm Max Q @ Freq: 180 @ 50MHz Frequency - Self Resonant: 500MHz Material - Core: Air Inductance Frequency - Test: 400 MHz Height - Seated (Max): 0.295" (7.49mm) Part Status: Active Inductance: 500 nH Current Rating (Amps): 4.3 A | auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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SQATESTDONOTUSE11 | ****MFR Code for Performance Testing Only**** | Old Part SQA TEST DO NOT USE 11^SWBPERFSUP | Produkt ist nicht verfügbar | |||||||||||||||
SQATESTDONOTUSE14 | ****MFR Code for Performance Testing Only**** | Old Part SQA TEST DO NOT USE 14^SWBPERFSUP | Produkt ist nicht verfügbar | |||||||||||||||
SQATESTDONOTUSE27 | ****MFR Code for Performance Testing Only**** | Old Part SQA TEST DO NOT USE 27^SWBPERFSUP | Produkt ist nicht verfügbar | |||||||||||||||
SQATESTDONOTUSE31 | ****MFR Code for Performance Testing Only**** | Old Part SQA TEST DO NOT USE 31^SWBPERFSUP | Produkt ist nicht verfügbar |