Produkte > SQ3
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||||
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SQ30057D-106.25MHZ | PLETRONICS | 06+ ; | auf Bestellung 4842 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
SQ3185Q | auf Bestellung 89 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SQ3226220KLB | auf Bestellung 162 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SQ3245Q | IDT | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
SQ3300 | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SQ3300 | CAN | auf Bestellung 98 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
SQ3384P | auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SQ3384Q | 95 | auf Bestellung 964 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
SQ3384Q | auf Bestellung 964 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SQ3410EV-T1_BE3 | Vishay Siliconix | Description: N-CHANNEL 30-V (D-S) 175C MOSFET Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1005 pF @ 15 V | auf Bestellung 8303 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3410EV-T1_BE3 | Vishay Siliconix | Description: N-CHANNEL 30-V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1005 pF @ 15 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3410EV-T1_GE3 | Vishay | Trans MOSFET N-CH 30V 8A Automotive 6-Pin TSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3410EV-T1_GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1005 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3410EV-T1_GE3 | Vishay | Trans MOSFET N-CH 30V 8A Automotive 6-Pin TSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3410EV-T1_GE3 | Vishay / Siliconix | MOSFET 30V 8A 5W AEC-Q101 Qualified | auf Bestellung 18657 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3410EV-T1_GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1005 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3410EV-T1_GE3 | Vishay | Trans MOSFET N-CH 30V 8A Automotive 6-Pin TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3418AEEV-T1_BE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3418AEEV-T1_BE3 | Vishay / Siliconix | MOSFET N-CHANNEL 40V (D-S) | auf Bestellung 36100 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3418AEEV-T1_BE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3418AEEV-T1_GE3 | VISHAY | Description: VISHAY - SQ3418AEEV-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 8 A, 0.026 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.026ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 6500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3418AEEV-T1_GE3 | Vishay | Trans MOSFET N-CH 40V 8A Automotive 6-Pin TSOP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3418AEEV-T1_GE3 | VISHAY | Description: VISHAY - SQ3418AEEV-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 8 A, 0.026 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.026ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 6500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3418AEEV-T1_GE3 | Vishay Semiconductors | MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified | auf Bestellung 7123 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3418EEV-T1-GE3 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SQ3418EEV-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 8A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3418EEV-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 8A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3418EEV-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 8A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3418EV-T1_BE3 | Vishay Siliconix | Description: N-CHANNEL 40-V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 20 V | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3418EV-T1_BE3 | Vishay Siliconix | Description: N-CHANNEL 40-V (D-S) 175C MOSFET Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 20 V | auf Bestellung 32858 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3418EV-T1_GE3 | Vishay Siliconix | Description: MOSFET N-CHANNEL 40V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 20 V | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3418EV-T1_GE3 | Vishay / Siliconix | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | auf Bestellung 54636 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3418EV-T1_GE3 | Vishay Siliconix | Description: MOSFET N-CHANNEL 40V 8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 20 V | auf Bestellung 35700 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3419AEEV-T1_BE3 | Vishay / Siliconix | MOSFETs P-CHANNEL 40-V (D-S) 175C MOSFET | auf Bestellung 59940 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3419AEEV-T1_GE3 | Vishay | Automotive P-Channel 60 V D-S 175 Degree C Mosfet | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3419AEEV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CHANNEL 40V 6.9A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 4329 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3419AEEV-T1_GE3 | Vishay / Siliconix | MOSFET -40V Vds TSOP-6 AEC-Q101 Qualified | auf Bestellung 28863 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3419AEEV-T1_GE3 | VISHAY | Description: VISHAY - SQ3419AEEV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 6.9 A, 0.048 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 6.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Verlustleistung Pd: 5W Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: TSOP Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.048ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.048ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 5561 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3419AEEV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CHANNEL 40V 6.9A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 6551 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3419CEV-T1_GE3 | Vishay / Siliconix | MOSFETs P-CHANNEL 40-V (D-S) 175C MOSFET | auf Bestellung 1434 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3419EEV-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 7.4A 6TSOP | auf Bestellung 3419 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SQ3419EEV-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 7.4A 6TSOP | auf Bestellung 3419 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SQ3419EEV-T1-GE3 | Vishay | Trans MOSFET P-CH 40V 7.4A Automotive 6-Pin TSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3419EEV-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 7.4A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3419EV-T1_BE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 6.9A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3419EV-T1_BE3 | Vishay | Trans MOSFET P-CH 40V 6.9A Automotive 6-Pin TSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3419EV-T1_BE3 | Vishay / Siliconix | MOSFET P-CHANNEL 40V (D-S) | auf Bestellung 33971 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3419EV-T1_BE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 6.9A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 9835 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3419EV-T1_GE3 | VISHAY | Description: VISHAY - SQ3419EV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 6.9 A, 0.048 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 6.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.048ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 10001 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3419EV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 6.9A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 5725 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3419EV-T1_GE3 | Vishay | Trans MOSFET P-CH 40V 6.9A Automotive AEC-Q101 6-Pin TSOP T/R | auf Bestellung 358 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ3419EV-T1_GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.9A; Idm: -27A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -6.9A Pulsed drain current: -27A Power dissipation: 1.6W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 86mΩ Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3419EV-T1_GE3 | Vishay | Trans MOSFET P-CH 40V 6.9A Automotive 6-Pin TSOP T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3419EV-T1_GE3 | Vishay | Trans MOSFET P-CH 40V 6.9A Automotive AEC-Q101 6-Pin TSOP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ3419EV-T1_GE3 | VISHAY | Description: VISHAY - SQ3419EV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 6.9 A, 0.048 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 6.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.048ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 10001 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3419EV-T1_GE3 | Vishay Semiconductors | MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified | auf Bestellung 72603 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3419EV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CH 40V 6.9A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3419EV-T1_GE3 | Vishay | Trans MOSFET P-CH 40V 6.9A Automotive AEC-Q101 6-Pin TSOP T/R | auf Bestellung 358 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ3419EV-T1_GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.9A; Idm: -27A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -6.9A Pulsed drain current: -27A Power dissipation: 1.6W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 86mΩ Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3419EV-T1_GE3 | Vishay | Trans MOSFET P-CH 40V 6.9A Automotive AEC-Q101 6-Pin TSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3419EV-T1_GE3 | Vishay | Trans MOSFET P-CH 40V 6.9A Automotive AEC-Q101 6-Pin TSOP T/R | auf Bestellung 2890 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ3425EV-T1_BE3 | Vishay / Siliconix | MOSFET P-CHANNEL 20V (D-S) | auf Bestellung 5210 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3425EV-T1_BE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 7.4A 6-TSOP | auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3425EV-T1_BE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 7.4A 6-TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3425EV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CHANNEL 20V 7.4A 6TSOP | auf Bestellung 2999 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3425EV-T1_GE3 | Vishay Semiconductors | MOSFET P Ch -20Vds 12Vgs AEC-Q101 Qualified | auf Bestellung 2509 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3425EV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CHANNEL 20V 7.4A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426AEEV-T1_BE3 | Vishay / Siliconix | MOSFETs N-CHANNEL 60V (D-S) | auf Bestellung 41425 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3426AEEV-T1_BE3 | Vishay | Trans MOSFET N-CH 60V 7A 6-Pin TSOP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426AEEV-T1_GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 7A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 9982 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3426AEEV-T1_GE3 | Vishay | Trans MOSFET N-CH 60V 7A 6-Pin TSOP Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426AEEV-T1_GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Pulsed drain current: 29A Power dissipation: 5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 71mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426AEEV-T1_GE3 | Vishay | Trans MOSFET N-CH 60V 7A 6-Pin TSOP Automotive AEC-Q101 | auf Bestellung 7716 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ3426AEEV-T1_GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 7A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3426AEEV-T1_GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Pulsed drain current: 29A Power dissipation: 5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 71mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426AEEV-T1_GE3 | Vishay / Siliconix | MOSFETs 60V Vds -/+20V Vgs AEC-Q101 Qualified | auf Bestellung 17859 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3426AEEV-T1_GE3 | Vishay | Trans MOSFET N-CH 60V 7A Automotive 6-Pin TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426AEEV-T1_GE3 | Vishay | Trans MOSFET N-CH 60V 7A 6-Pin TSOP Automotive AEC-Q101 | auf Bestellung 7716 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ3426CEEV-T1-BE3 | Vishay | MOSFETs 60V N-CHANNEL (D-S) | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426CEEV-T1-GE3 | Vishay | MOSFETs 60V N-CHANNEL (D-S) | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426CEEV-T1/GE3 | Vishay | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426CEEV-T1_GE3 | Vishay / Siliconix | MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET | auf Bestellung 2317 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3426CEV-T1-BE3 | Vishay | MOSFETs N-CHAN 60-V(D-S)175C MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426CEV-T1-GE3 | Vishay | MOSFETs N-CHAN 60-V(D-S)175C MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426CEV-T1/GE3 | Vishay | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426CEV-T1_GE3 | VISHAY | Description: VISHAY - SQ3426CEV-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 7 A, 0.034 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.034ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 1615 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3426CEV-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 60 V (D-S) Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426CEV-T1_GE3 | Vishay | Trans MOSFET N-CH 60V 7A 6-Pin TSOP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426CEV-T1_GE3 | Vishay | Trans MOSFET N-CH 60V 7A 6-Pin TSOP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426CEV-T1_GE3 | Vishay Semiconductors | MOSFETs Automotive N-Channel 60V 175C MOSFET 42mO 10V, 63mO 4.5V | auf Bestellung 20813 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3426CEV-T1_GE3 | VISHAY | Description: VISHAY - SQ3426CEV-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 7 A, 0.034 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.034ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 1615 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3426CEV-T1_GE3 | Vishay | Trans MOSFET N-CH 60V 7A 6-Pin TSOP T/R Automotive AEC-Q101 | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3426CEV-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 60 V (D-S) Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2315 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3426CEV-T1_GE3 | Vishay | Trans MOSFET N-CH 60V 7A 6-Pin TSOP T/R Automotive AEC-Q101 | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3426EEV-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 7A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426EEV-T1-GE3 | Vishay | Trans MOSFET N-CH 60V 7A Automotive 6-Pin TSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426EEV-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 7A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426EEV-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 7A 6TSOP | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SQ3426EV-T1"GE3 | VISHAY | Description: VISHAY - SQ3426EV-T1"GE3 - N-CHANNEL 60-V (D-S) 175C MOSFET 26AK9939 | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426EV-T1_BE3 | Vishay / Siliconix | MOSFET N-CHANNEL 60V (D-S) | auf Bestellung 224712 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3426EV-T1_BE3 | Vishay Siliconix | Description: MOSFET N-CHANNEL 60V 7A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426EV-T1_BE3 | Vishay | Trans MOSFET N-CH 60V 7A 6-Pin TSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426EV-T1_BE3 | Vishay Siliconix | Description: MOSFET N-CHANNEL 60V 7A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 30 V | auf Bestellung 1713 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3426EV-T1_GE3 | VISHAY | Description: VISHAY - SQ3426EV-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 7 A, 0.032 ohm, TSOP, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.032ohm SVHC: To Be Advised | auf Bestellung 50770 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3426EV-T1_GE3 | Vishay Siliconix | Description: MOSFET N-CHANNEL 60V 7A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 41534 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3426EV-T1_GE3 | Vishay | Trans MOSFET N-CH 60V 7A Automotive AEC-Q101 6-Pin TSOP T/R | auf Bestellung 875 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ3426EV-T1_GE3 | Vishay | Trans MOSFET N-CH 60V 7A Automotive 6-Pin TSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3426EV-T1_GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Pulsed drain current: 29A Power dissipation: 5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 71mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 2228 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ3426EV-T1_GE3 | VISHAY | Description: VISHAY - SQ3426EV-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 7 A, 0.032 ohm, TSOP, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.032ohm SVHC: To Be Advised | auf Bestellung 50770 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3426EV-T1_GE3 | Vishay Siliconix | Description: MOSFET N-CHANNEL 60V 7A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3426EV-T1_GE3 | Vishay | Trans MOSFET N-CH 60V 7A Automotive AEC-Q101 6-Pin TSOP T/R | auf Bestellung 875 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ3426EV-T1_GE3 | Vishay Semiconductors | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | auf Bestellung 59981 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3426EV-T1_GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Pulsed drain current: 29A Power dissipation: 5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 71mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 2228 Stücke: Lieferzeit 7-14 Tag (e) |
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SQ3427AEEV-T1_BE3 | Vishay Siliconix | Description: MOSFET P-CH 60V 5.3A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 8043 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3427AEEV-T1_BE3 | Vishay / Siliconix | MOSFET P-CHANNEL 60V (D-S) | auf Bestellung 148742 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3427AEEV-T1_BE3 | Vishay Siliconix | Description: MOSFET P-CH 60V 5.3A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3427AEEV-T1_GE3 | VISHAY | Description: VISHAY - SQ3427AEEV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 5.3 A, 0.079 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 5.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 3 - 168 Stunden usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.079ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 19490 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3427AEEV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CH 60V 5.3A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 25930 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3427AEEV-T1_GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A Kind of package: reel; tape Pulsed drain current: -21A Power dissipation: 1.6W Gate charge: 22nC Polarisation: unipolar Technology: TrenchFET® Features of semiconductor devices: ESD protected gate Drain current: -5.3A Kind of channel: enhanced Drain-source voltage: -60V Application: automotive industry Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: TSOP6 On-state resistance: 178mΩ Mounting: SMD Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3427AEEV-T1_GE3 | VISHAY | Description: VISHAY - SQ3427AEEV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 5.3 A, 0.079 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 5.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 3 - 168 Stunden usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.079ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 19490 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3427AEEV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CH 60V 5.3A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3427AEEV-T1_GE3 | Vishay | Trans MOSFET P-CH 60V 5.3A Automotive 6-Pin TSOP T/R | auf Bestellung 3170 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3427AEEV-T1_GE3 | Vishay Semiconductors | MOSFET -60V Vds +/-20V Vgs AEC-Q101 Qualified | auf Bestellung 604878 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3427AEEV-T1_GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A Kind of package: reel; tape Pulsed drain current: -21A Power dissipation: 1.6W Gate charge: 22nC Polarisation: unipolar Technology: TrenchFET® Features of semiconductor devices: ESD protected gate Drain current: -5.3A Kind of channel: enhanced Drain-source voltage: -60V Application: automotive industry Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: TSOP6 On-state resistance: 178mΩ Mounting: SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3427CEV-T1_GE3 | Vishay / Siliconix | MOSFETs P-CHANNEL 60-V (D-S) 175C MOSFET | auf Bestellung 1686 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3427EEV-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 60V 5.5A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3427EEV-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 60V 5.5A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3427EEV-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 60V 5.5A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3427EV-T1_BE3 | Vishay / Siliconix | MOSFET P-CHANNEL 60V (D-S) | auf Bestellung 113151 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3427EV-T1_BE3 | Vishay Siliconix | Description: MOSFET P-CH 60V 5.3A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3427EV-T1_BE3 | Vishay Siliconix | Description: MOSFET P-CH 60V 5.3A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3427EV-T1_GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A Kind of package: reel; tape Pulsed drain current: -21A Power dissipation: 5W Gate charge: 22nC Polarisation: unipolar Technology: TrenchFET® Drain current: -5.3A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: TSOP6 On-state resistance: 178mΩ Mounting: SMD Anzahl je Verpackung: 1 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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SQ3427EV-T1_GE3 | VISHAY | Description: VISHAY - SQ3427EV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 5.3 A, 0.079 ohm, TSOP, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 5.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.079ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 12583 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3427EV-T1_GE3 | Vishay | Trans MOSFET P-CH 60V 5.3A Automotive 6-Pin TSOP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3427EV-T1_GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A Kind of package: reel; tape Pulsed drain current: -21A Power dissipation: 5W Gate charge: 22nC Polarisation: unipolar Technology: TrenchFET® Drain current: -5.3A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: TSOP6 On-state resistance: 178mΩ Mounting: SMD | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ3427EV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CH 60V 5.3A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 17440 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3427EV-T1_GE3 | Vishay Semiconductors | MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified | auf Bestellung 443710 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3427EV-T1_GE3 | VISHAY | Description: VISHAY - SQ3427EV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 5.3 A, 0.079 ohm, TSOP, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 5.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.079ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 12583 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3427EV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CH 60V 5.3A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3442EV-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 4.3A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3442EV-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 4.3A 6TSOP | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SQ3442EV-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 4.3A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3456BEV-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 7.8A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3456BEV-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 7.8A 6TSOP | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SQ3456BEV-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 7.8A 6TSOP | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SQ3456BEV-T1_GE3 | Vishay Semiconductors | MOSFET 30V 7.8A 4W AEC-Q101 Qualified | auf Bestellung 2199 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SQ3456BEV-T1_GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 7.8A 6TSOP | auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SQ3456BEV-T1_GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 7.8A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3456CEV | Vishay | Trans MOSFET N-CH 30V 7.8A 6-Pin TSOP T/R Automotive AEC-Q101 | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3456CEV | Vishay | Trans MOSFET N-CH 30V 7.8A 6-Pin TSOP T/R Automotive AEC-Q101 | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3456CEV-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 30 V (D-S) Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V Power Dissipation (Max): 4W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V | auf Bestellung 3050 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3456CEV-T1_GE3 | Vishay Semiconductors | MOSFET Automotive N-Channel 30V 175C MOSFET 35mO 10V, 52mO 4.5V | auf Bestellung 5759 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3456CEV-T1_GE3 | Vishay Siliconix | Description: AUTOMOTIVE N-CHANNEL 30 V (D-S) Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V Power Dissipation (Max): 4W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3456EV-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH D-S 30V 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3457EV-T1_BE3 | Vishay Siliconix | Description: MOSFET P-CHANNEL 30V 6.8A 6TSOP | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3457EV-T1_BE3 | Vishay / Siliconix | MOSFET P-CHANNEL 30V (D-S) | auf Bestellung 5823 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3457EV-T1_BE3 | VISHAY | SQ3457EV-T1-BE3 SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3457EV-T1_BE3 | Vishay Siliconix | Description: MOSFET P-CHANNEL 30V 6.8A 6TSOP | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3457EV-T1_GE3 | Vishay | Trans MOSFET P-CH 30V 6.8A Automotive 6-Pin TSOP T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3457EV-T1_GE3 | Vishay / Siliconix | MOSFET P-Channel 30V AEC-Q101 Qualified | auf Bestellung 203370 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3457EV-T1_GE3 | VISHAY | SQ3457EV-T1-GE3 SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3457EV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CHANNEL 30V 6.8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 14952 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3457EV-T1_GE3 | VISHAY | Description: VISHAY - SQ3457EV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 6.8 A, 0.035 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 6.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.035ohm SVHC: To Be Advised | auf Bestellung 17353 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3457EV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CHANNEL 30V 6.8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 6A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3457EV-T1_GE3 | VISHAY | Description: VISHAY - SQ3457EV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 6.8 A, 0.035 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 6.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.035ohm SVHC: To Be Advised | auf Bestellung 17353 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3460EV-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 8A 6TSOP | auf Bestellung 541 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SQ3460EV-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 8A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3460EV-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 8A 6TSOP | auf Bestellung 541 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SQ3460EV-T1_GE3 | VISHAY | Description: VISHAY - SQ3460EV-T1_GE3 - Leistungs-MOSFET, n-Kanal, 20 V, 8 A, 0.025 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 3.6W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.025ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3460EV-T1_GE3 | Vishay | Trans MOSFET N-CH 20V 8A Automotive 6-Pin TSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3460EV-T1_GE3 | Vishay Semiconductors | MOSFET 20V 8A 3.6W AEC-Q101 Qualified | auf Bestellung 394 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3460EV-T1_GE3 | VISHAY | Description: VISHAY - SQ3460EV-T1_GE3 - Leistungs-MOSFET, n-Kanal, 20 V, 8 A, 0.025 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 600mV euEccn: NLR Verlustleistung: 3.6W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.025ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3461EV-T1_BE3 | Vishay / Siliconix | MOSFET P-CHANNEL 12-V (D-S) 175C MOSFET | auf Bestellung 47953 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3461EV-T1_BE3 | Vishay Siliconix | Description: P-CHANNEL 12-V (D-S) 175C MOSFET Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3461EV-T1_BE3 | Vishay Siliconix | Description: P-CHANNEL 12-V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3461EV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CHANNEL 12V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3461EV-T1_GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -6.6A; 1.67W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -6.6A Power dissipation: 1.67W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 25mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3461EV-T1_GE3 | Vishay | Trans MOSFET P-CH 12V 8A Automotive 6-Pin TSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3461EV-T1_GE3 | Vishay | Trans MOSFET P-CH 12V 8A Automotive 6-Pin TSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3461EV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CHANNEL 12V 8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3461EV-T1_GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -6.6A; 1.67W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -6.6A Power dissipation: 1.67W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 25mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3461EV-T1_GE3 | Vishay | Trans MOSFET P-CH 12V 8A Automotive 6-Pin TSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3461EV-T1_GE3 | Vishay / Siliconix | MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified | auf Bestellung 16631 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3469EV-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 8A TSOP-6 | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3469EV-T1-GE3 | Vishay / Siliconix | MOSFET RECOMMENDED ALT SQ3469EV-T1_GE3 | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3469EV-T1_BE3 | Vishay Siliconix | Description: P-CHANNEL 20-V (D-S) 175C MOSFET Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 25µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V | auf Bestellung 8655 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3469EV-T1_BE3 | Vishay Siliconix | Description: P-CHANNEL 20-V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 25µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3469EV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 25µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3469EV-T1_GE3 | Vishay / Siliconix | MOSFET 20V 8A 5W AEC-Q101 Qualified | auf Bestellung 2960 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3469EV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 25µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V | auf Bestellung 2013 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3481EV-T1-GE3 | Vishay / Siliconix | MOSFET P-Channel 30V Automotive MOSFET | auf Bestellung 1350 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
SQ3481EV-T1_BE3 | Vishay Siliconix | Description: MOSFET P-CHANNEL 30V 7.5A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3481EV-T1_BE3 | Vishay / Siliconix | MOSFET P-CHANNEL 30V (D-S) | auf Bestellung 50541 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3481EV-T1_BE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -30A Case: TSOP6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET On-state resistance: 70mΩ Power dissipation: 4W Polarisation: unipolar Drain current: -7.5A Drain-source voltage: -30V Gate charge: 23.5nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -30A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3481EV-T1_BE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.5A; Idm: -30A Case: TSOP6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET On-state resistance: 70mΩ Power dissipation: 4W Polarisation: unipolar Drain current: -7.5A Drain-source voltage: -30V Gate charge: 23.5nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -30A | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3481EV-T1_BE3 | Vishay Siliconix | Description: MOSFET P-CHANNEL 30V 7.5A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3481EV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CHANNEL 30V 7.5A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3481EV-T1_GE3 | Vishay Semiconductors | MOSFET P-Channel 30V AEC-Q101 Qualified | auf Bestellung 43768 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3481EV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CHANNEL 30V 7.5A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3493EV-T1_GE3 | VISHAY | SQ3493EV-T1-GE3 SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3493EV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V | auf Bestellung 5994 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3493EV-T1_GE3 | VISHAY | Description: VISHAY - SQ3493EV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 8 A, 0.016 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.016ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 11028 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3493EV-T1_GE3 | Vishay / Siliconix | MOSFET P-CHANNEL 20-V (D-S) 175C MOSFET | auf Bestellung 2168 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3493EV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3493EV-T1_GE3 | VISHAY | Description: VISHAY - SQ3493EV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 8 A, 0.016 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.016ohm SVHC: No SVHC (10-Jun-2022) | auf Bestellung 11028 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3495EV-T1_GE3 | Vishay / Siliconix | MOSFET P-CHANNEL 30-V (D-S) 175C MOSFET | auf Bestellung 14176 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3495EV-T1_GE3 | VISHAY | Description: VISHAY - SQ3495EV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 8 A, 0.017 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.017ohm | auf Bestellung 2261 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3495EV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CH 30V 8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 15600 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3495EV-T1_GE3 | VISHAY | Description: VISHAY - SQ3495EV-T1_GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 8 A, 0.017 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 5W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.017ohm | auf Bestellung 2261 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3495EV-T1_GE3 | Vishay Siliconix | Description: MOSFET P-CH 30V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 4.5V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3585EV-T1_GE3 | Vishay Siliconix | Description: MOSFET N/P-CH 20V 3.57A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.67W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 8885 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3585EV-T1_GE3 | Vishay Semiconductors | MOSFETs N Ch 20Vds 12Vgs AEC-Q101 Qualified | auf Bestellung 6610 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3585EV-T1_GE3 | Vishay | Trans MOSFET N/P-CH 20V 3.57A/2.5A Automotive 6-Pin TSOP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3585EV-T1_GE3 | Vishay Siliconix | Description: MOSFET N/P-CH 20V 3.57A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.67W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.57A (Tc), 2.5A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V, 3.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3985EV-T1_BE3 | Vishay / Siliconix | MOSFET P-CHANNEL 20V (D-S) | auf Bestellung 12720 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3985EV-T1_GE3 | Vishay | Trans MOSFET P-CH 20V 3.9A Automotive 6-Pin TSOP | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3985EV-T1_GE3 | Vishay | auf Bestellung 2965 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
SQ3985EV-T1_GE3 | Vishay / Siliconix | MOSFETs P Ch -20Vds 8Vgs AEC-Q101 Qualified | auf Bestellung 128318 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3987EV-T1_GE3 | Vishay | DUAL P-CHANNEL 30-V (D-S) 175C MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3987EV-T1_GE3 Produktcode: 174743 | Transistoren > Transistoren P-Kanal-Feld | Produkt ist nicht verfügbar | ||||||||||||||||||||
SQ3987EV-T1_GE3 | Vishay | DUAL P-CHANNEL 30-V (D-S) 175C MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3987EV-T1_GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 30V 3A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.67W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V Rds On (Max) @ Id, Vgs: 133mOhm @ 1.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3987EV-T1_GE3 | VISHAY | Description: VISHAY - SQ3987EV-T1_GE3 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 3 A, 3 A, 0.085 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.085ohm Verlustleistung, p-Kanal: 1.67W euEccn: NLR Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.085ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 1.67W SVHC: No SVHC (10-Jun-2022) | auf Bestellung 7888 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3987EV-T1_GE3 | Vishay Semiconductors | MOSFET Dual P-Ch -30V AEC-Q101 Qualified | auf Bestellung 66742 Stücke: Lieferzeit 540-544 Tag (e) |
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SQ3987EV-T1_GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 30V 3A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.67W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V Rds On (Max) @ Id, Vgs: 133mOhm @ 1.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 7092 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3987EV-T1_GE3 | VISHAY | Description: VISHAY - SQ3987EV-T1_GE3 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 3 A, 3 A, 0.085 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 3A Dauer-Drainstrom Id, p-Kanal: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.085ohm Verlustleistung, p-Kanal: 1.67W euEccn: NLR Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.085ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 1.67W Betriebstemperatur, max.: 175°C | auf Bestellung 7888 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SQ3989EV-T1_BE3 | Vishay Siliconix | Description: DUAL P-CHANNEL 30-V (D-S) 175C M Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.67W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3989EV-T1_BE3 | Vishay Siliconix | Description: DUAL P-CHANNEL 30-V (D-S) 175C M Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.67W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3989EV-T1_GE3 | Vishay Semiconductors | MOSFETs Dual P-Channel 30V TSOP-6 | auf Bestellung 236085 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3989EV-T1_GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 30V 2.5A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.67W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 56683 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3989EV-T1_GE3 | Vishay Siliconix | Description: MOSFET 2P-CH 30V 2.5A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.67W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 400mA, 10V Gate Charge (Qg) (Max) @ Vgs: 11.1nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 54000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ3D02457D6JFA | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SQ3D02600B-2JBA | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SQ3D02600B2 | auf Bestellung 634 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SQ3D02600B2INE | auf Bestellung 634 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SQ3D02600B2JBA | auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SQ3D02600C2 | auf Bestellung 15121 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SQ3D02600C2HBA | auf Bestellung 489 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SQ3D02600C2JBA | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SQ3D02600C2JBAPb | auf Bestellung 15121 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SQ3D02600C2JBAPb10PF10PPM | auf Bestellung 15121 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SQ3D02600C2JBAPb26MHZ10PF10PPM | auf Bestellung 15121 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SQ3D02600L2LNA | QFN?? | auf Bestellung 2987 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
SQ3D02600LZLNA | EPCOS | QFN?? | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
SQ3O00800DICNC-PMC | SAMSUNG | N/A | auf Bestellung 250 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
SQ3U02400D6JFA | SAMSUNGEM | Ceramic SMD Crystal 24MHz 3225 �30PPM �30PPM -30 ~ +70C 12pf 60R ESR | Produkt ist nicht verfügbar | |||||||||||||||||||
SQ3U02457D6 | auf Bestellung 1176 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SQ3U02457D6JFA | SAMSUNG | 08+ | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
SQ3U02457D6JFA12PF30PPM | auf Bestellung 1176 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SQ3U02457D6JFA24.576MHZ12PF30PPM | auf Bestellung 1176 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SQ3U02600C3 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
SQ3U02600C3HCA | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |