Produkte > SIU
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||||
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SIU175-40-L5 | SunStar | Description: PROPANE HEATER INFRARED STANDARD Packaging: Bulk Voltage: 120V Material: Cast Iron Burner, Aluminum Reflectors Height: 6-1/4" Part Status: Active Current Rating (Amps): 2.4 Fuel Type: Propane Length (Inches): 273 Width (Inches): 13 BTU's: 175000 Ignition Type: Direct Spark | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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SIU175-40-N5 | SunStar | Description: NATURAL GAS HEATER INFRARED VACU Packaging: Bulk Voltage: 120V Material: Cast Iron Burner, Aluminum Reflectors Height: 6-1/4" Part Status: Active Current Rating (Amps): 2.4 Fuel Type: Natural Gas Length (Inches): 273 Width (Inches): 13 BTU's: 175000 Ignition Type: Direct Spark | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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SIU175-40-TG-L5 | SunStar | Description: PROPANE HEATER INFRARED TOUGHGUY Packaging: Bulk Material: Cast Iron Burner, Aluminum Reflectors Height: 6-1/4" Part Status: Active Fuel Type: Propane Length (Inches): 273 Width (Inches): 31 BTU's: 175000 Ignition Type: Direct Spark | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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SIU175-40-TG-N5 | SunStar | Description: NATURAL GAS HEATER INFRARED VACU Packaging: Bulk Material: Cast Iron Burner, Aluminum Reflectors Height: 6-1/4" Part Status: Active Fuel Type: Natural Gas Length (Inches): 273 Width (Inches): 31 BTU's: 175000 Ignition Type: Direct Spark | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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SIU175-50-L5 | SunStar | Description: PROPANE HEATER INFRARED STANDARD Packaging: Bulk Material: Cast Iron Burner, Aluminum Reflectors Height: 6-1/4" Part Status: Active Fuel Type: Propane Length (Inches): 333 Width (Inches): 31 BTU's: 175000 Ignition Type: Direct Spark | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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SIU175-50-N5 | SunStar | Description: NATURAL GAS HEATER INFRARED VACU Packaging: Bulk Material: Cast Iron Burner, Aluminum Reflectors Height: 6-1/4" Part Status: Active Fuel Type: Natural Gas Length (Inches): 333 Width (Inches): 31 BTU's: 175000 Ignition Type: Direct Spark | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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SIU175-50-TG-L5 | SunStar | Description: PROPANE HEATER INFRARED TOUGHGUY Packaging: Bulk Material: Cast Iron Burner, Aluminum Reflectors Height: 6-1/4" Part Status: Active Fuel Type: Propane Length (Inches): 333 Width (Inches): 31 BTU's: 175000 Ignition Type: Direct Spark | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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SIUD401ED-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 30V 500MA PPAK 0806 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 0806 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.573Ohm @ 200mA, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® 0806 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
SIUD401ED-T1-GE3 | VISHAY | Description: VISHAY - SIUD401ED-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 500 mA, 1.23 ohm, PowerPAK 0806, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 500 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 1.25 Gate-Source-Schwellenspannung, max.: 1.4 Verlustleistung: 1.25 Bauform - Transistor: PowerPAK 0806 Anzahl der Pins: 3 Produktpalette: TrenchFET Gen III Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 1.23 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 1.23 SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
SIUD401ED-T1-GE3 | Vishay Semiconductors | MOSFET -30V Vds; +/-12V Vgs PowerPAK 0806 | Produkt ist nicht verfügbar | |||||||||||||||||||
SIUD401ED-T1-GE3 | VISHAY | Description: VISHAY - SIUD401ED-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 500 mA, 1.23 ohm, PowerPAK 0806, Oberflächenmontage Verlustleistung: 1.25 Kanaltyp: p-Kanal Drain-Source-Durchgangswiderstand: 1.23 Qualifikation: - SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
SIUD401ED-T1-GE3 | Vishay | Trans MOSFET P-CH 30V 0.32A 3-Pin PowerPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIUD401ED-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 30V 500MA PPAK 0806 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 0806 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.573Ohm @ 200mA, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerPAK® 0806 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||||||
SIUD401ED-T1-GE3 | Vishay | Trans MOSFET P-CH 30V 0.32A 3-Pin PowerPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIUD401ED-T1-GE3 | VISHAY | SIUD401ED-T1-GE3 SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SIUD402ED-T1-GE3 | Vishay Semiconductors | MOSFET 20V Vds 8V Vgs PowerPAK 0806 | auf Bestellung 132843 Stücke: Lieferzeit 10-14 Tag (e) |
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SIUD402ED-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 20V 1A PPAK 0806 | Produkt ist nicht verfügbar | |||||||||||||||||||
SIUD402ED-T1-GE3 | Vishay | N-CHANNEL 20 V (D-S) MOSFET | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
SIUD402ED-T1-GE3 | VISHAY | SIUD402ED-T1-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SiUD403ED-T1-GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -500mA; 1.25W Mounting: SMD Polarisation: unipolar Power dissipation: 1.25W Kind of package: reel; tape Gate charge: 1.7nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.8A Drain-source voltage: -20V Drain current: -0.5A On-state resistance: 4.4Ω Type of transistor: P-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
SiUD403ED-T1-GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -500mA; 1.25W Mounting: SMD Polarisation: unipolar Power dissipation: 1.25W Kind of package: reel; tape Gate charge: 1.7nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.8A Drain-source voltage: -20V Drain current: -0.5A On-state resistance: 4.4Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
SiUD403ED-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 500MA PPAK 0806 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 0806 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: PowerPAK® 0806 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V | auf Bestellung 5533 Stücke: Lieferzeit 10-14 Tag (e) |
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SiUD403ED-T1-GE3 | Vishay / Siliconix | MOSFETs -20V Vds 8V Vgs PowerPAK 0806 | auf Bestellung 26220 Stücke: Lieferzeit 10-14 Tag (e) |
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SiUD403ED-T1-GE3 | Vishay Siliconix | Description: MOSFET P-CH 20V 500MA PPAK 0806 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 0806 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 300mA, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: PowerPAK® 0806 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
SIUD403ED-T1-GE3 | Vishay | Trans MOSFET P-CH 20V 0.5A 3-Pin PowerPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIUD406ED-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 500MA PPAK 0806 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 0806 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.46Ohm @ 200mA, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: PowerPAK® 0806 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIUD406ED-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 0.37A 3-Pin PowerPAK T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIUD406ED-T1-GE3 | Vishay Semiconductors | MOSFET 30V Vds; 8V Vgs PowerPAK 0806 | auf Bestellung 12682 Stücke: Lieferzeit 10-14 Tag (e) |
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SIUD406ED-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 30V 500MA PPAK 0806 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 0806 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.46Ohm @ 200mA, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: PowerPAK® 0806 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 15 V | auf Bestellung 16860 Stücke: Lieferzeit 10-14 Tag (e) |
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SIUD406ED-T1-GE3 | VISHAY | SIUD406ED-T1-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||||
SIUD406ED-T1-GE3 | Vishay | Trans MOSFET N-CH 30V 0.37A 3-Pin PowerPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SiUD412ED-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 12V 500MA PPAK 0806 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 0806 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: PowerPAK® 0806 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 0.71 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 6 V | auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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SiUD412ED-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 500mA; Idm: 1.5A Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 0.71nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 1.5A Power dissipation: 1.25W Drain-source voltage: 12V Drain current: 0.5A On-state resistance: 2.5Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
SIUD412ED-T1-GE3 | Vishay | Trans MOSFET N-CH 12V 0.5A 3-Pin PowerPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SIUD412ED-T1-GE3 | Vishay | Trans MOSFET N-CH 12V 0.5A 3-Pin PowerPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
SiUD412ED-T1-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 500mA; Idm: 1.5A Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 0.71nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 1.5A Power dissipation: 1.25W Drain-source voltage: 12V Drain current: 0.5A On-state resistance: 2.5Ω Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
SiUD412ED-T1-GE3 | Vishay / Siliconix | MOSFET 12V Vds 5V Vgs PowerPAK 0806 | auf Bestellung 5750 Stücke: Lieferzeit 10-14 Tag (e) |
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SiUD412ED-T1-GE3 | Vishay Siliconix | Description: MOSFET N-CH 12V 500MA PPAK 0806 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 0806 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Rds On (Max) @ Id, Vgs: 340mOhm @ 500mA, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: PowerPAK® 0806 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 0.71 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 6 V | auf Bestellung 98041 Stücke: Lieferzeit 10-14 Tag (e) |
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SIUD412ED-T1-GE3 | Vishay | Trans MOSFET N-CH 12V 0.5A 3-Pin PowerPAK T/R | auf Bestellung 1348 Stücke: Lieferzeit 14-21 Tag (e) |
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SIUPC3 | Carlo Gavazzi | Interface Modules RS485/USB CONVERTER REV.0 | Produkt ist nicht verfügbar | |||||||||||||||||||
SIUTCP2 | Carlo Gavazzi | Interface Modules VIRTUAL COMM PORT GATEWAY | Produkt ist nicht verfügbar |