Produkte > RSQ
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
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RSQ015N06 | auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
RSQ015N06FRATR | ROHM | Description: ROHM - RSQ015N06FRATR - Leistungs-MOSFET, n-Kanal, 60 V, 1.5 A, 0.21 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 1.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.25W Bauform - Transistor: TSMT Anzahl der Pins: 6Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.21ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2358 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
RSQ015N06FRATR | ROHM | Description: ROHM - RSQ015N06FRATR - Leistungs-MOSFET, n-Kanal, 60 V, 1.5 A, 0.21 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 1.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.25W Bauform - Transistor: TSMT Anzahl der Pins: 6Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.21ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2358 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
RSQ015N06HZGTR | Rohm Semiconductor | Description: MOSFET N-CH 60V 1.5A TSMT6 | Produkt ist nicht verfügbar | |||||||||||||||
RSQ015N06HZGTR | Rohm Semiconductor | Description: MOSFET N-CH 60V 1.5A TSMT6 | auf Bestellung 2959 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ015N06HZGTR | ROHM Semiconductor | MOSFET Automotive Nch 60V 1.5A Small Signal MOSFET. RSQ015N06HZG is a MOSFET for DC/DC Converters. This is a high-reliability product of automotive grade qualified to AEC-Q101. | auf Bestellung 3000 Stücke: Lieferzeit 325-329 Tag (e) |
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RSQ015N06TR | Rohm Semiconductor | Description: MOSFET N-CH 60V 1.5A TSMT6 | Produkt ist nicht verfügbar | |||||||||||||||
RSQ015N06TR | ROHM SEMICONDUCTOR | RSQ015N06TR SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
RSQ015N06TR | Rohm Semiconductor | Description: MOSFET N-CH 60V 1.5A TSMT6 | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
RSQ015N06TR | ROHM Semiconductor | MOSFET SW MOSFET MID PWR N-CH 60V 1.5A | Produkt ist nicht verfügbar | |||||||||||||||
RSQ015N06TR | Rohm Semiconductor | Description: MOSFET N-CH 60V 1.5A TSMT6 | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
RSQ015P10FRATR | ROHM SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; Idm: -6A; 1.25W; TSMT6 Case: TSMT6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -100V Drain current: -1.5A On-state resistance: 0.54Ω Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -6A | Produkt ist nicht verfügbar | |||||||||||||||
RSQ015P10FRATR | ROHM SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; Idm: -6A; 1.25W; TSMT6 Case: TSMT6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -100V Drain current: -1.5A On-state resistance: 0.54Ω Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -6A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
RSQ015P10HZGTR | ROHM Semiconductor | MOSFET -100V P-CHANNEL -1.5A | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ015P10HZGTR | ROHM SEMICONDUCTOR | RSQ015P10HZGTR SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
RSQ015P10HZGTR | Rohm Semiconductor | Description: MOSFET P-CH 100V 1.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 22706 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ015P10HZGTR | Rohm Semiconductor | Description: MOSFET P-CH 100V 1.5A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ015P10TR | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
RSQ015P10TR | Rohm Semiconductor | Description: MOSFET P-CH 100V 1.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
RSQ015P10TR | ROHM Semiconductor | MOSFET 4V Drive Pch MOSFET | auf Bestellung 1583 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
RSQ015P10TR | Rohm Semiconductor | Description: MOSFET P-CH 100V 1.5A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ020N03 | auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
RSQ020N03FRATR | ROHM | Description: ROHM - RSQ020N03FRATR - Leistungs-MOSFET, n-Kanal, 30 V, 2 A, 0.096 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.25W Bauform - Transistor: TSMT Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.096ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2669 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
RSQ020N03FRATR | ROHM | Description: ROHM - RSQ020N03FRATR - Leistungs-MOSFET, n-Kanal, 30 V, 2 A, 0.096 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.25W Bauform - Transistor: TSMT Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.096ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2669 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
RSQ020N03HZGTR | ROHM | Description: ROHM - RSQ020N03HZGTR - Leistungs-MOSFET, n-Kanal, 30 V, 2 A, 0.096 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.25W Bauform - Transistor: TSMT Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.096ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2790 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
RSQ020N03HZGTR | ROHM SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.235Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
RSQ020N03HZGTR | ROHM Semiconductor | MOSFETs Automotive Nch 30V 2A Small Signal MOSFET. RSQ020N03HZG is a MOSFET for switching applications. This is a high-reliability product of automotive grade qualified to AEC-Q101. | auf Bestellung 1375 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ020N03HZGTR | Rohm Semiconductor | Description: MOSFET N-CH 30V 2A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||
RSQ020N03HZGTR | ROHM | Description: ROHM - RSQ020N03HZGTR - Leistungs-MOSFET, n-Kanal, 30 V, 2 A, 0.096 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.25W Bauform - Transistor: TSMT Anzahl der Pins: 6Pins Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.096ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2790 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
RSQ020N03HZGTR | ROHM SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.235Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
RSQ020N03HZGTR | Rohm Semiconductor | Description: MOSFET N-CH 30V 2A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 1040 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ020N03TR | Rohm Semiconductor | Description: MOSFET N-CH 30V 2A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V | auf Bestellung 2453 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ020N03TR | Rohm Semiconductor | Description: MOSFET N-CH 30V 2A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||
RSQ020N03TR | ROHM Semiconductor | MOSFETs Med Pwr, Sw MOSFET N Chan, 30V, 2A | auf Bestellung 1973 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ025P03 | ROHM | SOT163 | auf Bestellung 11400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
RSQ025P03 | ROHM | auf Bestellung 10450 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
RSQ025P03 TR | ROHM | SOT26/SOT363 | auf Bestellung 2964 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
RSQ025P03FRATR | ROHM SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.5A Pulsed drain current: -10A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
RSQ025P03FRATR | ROHM SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.5A Pulsed drain current: -10A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
RSQ025P03HZGTR | Rohm Semiconductor | Description: MOSFET P-CH 30V 2.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 1016 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ025P03HZGTR | ROHM Semiconductor | MOSFETs Pch -30V -2.5A Small Signal MOSFET - RSQ025P03HZG is a MOSFET for switching applications. This is a high-reliability product of automotive grade qualified to AEC-Q101. | auf Bestellung 2713 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ025P03HZGTR | Rohm Semiconductor | Description: MOSFET P-CH 30V 2.5A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||
RSQ025P03TR | ROHM Semiconductor | MOSFETs P-CH 30V 2.5A TSMT6 | Produkt ist nicht verfügbar | |||||||||||||||
RSQ025P03TR | ROHM | SOT23-6 0945+ | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
RSQ025P03TR Produktcode: 119115 | IC > IC andere | Produkt ist nicht verfügbar | ||||||||||||||||
RSQ025P03TR | Rohm Semiconductor | Description: MOSFET P-CH 30V 2.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||
RSQ025P03TR | Rohm Semiconductor | Description: MOSFET P-CH 30V 2.5A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||
RSQ030N08HZGTR | Rohm Semiconductor | Description: MOSFET N-CH 80V 3A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 131mOhm @ 3A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ030N08HZGTR | ROHM SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
RSQ030N08HZGTR | Rohm Semiconductor | Description: MOSFET N-CH 80V 3A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 131mOhm @ 3A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 7911 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ030N08HZGTR | ROHM Semiconductor | MOSFETs Automotive Nch 80V 3A Small Signal MOSFET - RSQ030N08HZG is a MOSFET for switching applications. This is a high-reliability product of automotive grade qualified to AEC-Q101. | auf Bestellung 25823 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ030N08HZGTR | ROHM SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 3A; Idm: 12A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 3A Pulsed drain current: 12A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
RSQ030P03 | ROHM Semiconductor | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
RSQ030P03 | ROHM | auf Bestellung 6200 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
RSQ030P03 Produktcode: 45987 | Verschiedene Bauteile > Verschiedene Bauteile 2 | Produkt ist nicht verfügbar | ||||||||||||||||
RSQ030P03 | ROHM | SOT163 | auf Bestellung 22720 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
RSQ030P03 TR | ROHM | SOT23-6 | auf Bestellung 4633 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
RSQ030P03TR | auf Bestellung 3080 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
RSQ030P03TR | Rohm Semiconductor | Description: MOSFET P-CH 30V 3A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||
RSQ030P03TR | Rohm Semiconductor | Description: MOSFET P-CH 30V 3A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||
RSQ030P03TR | ROHM Semiconductor | MOSFETs P-CH 30V 3A TSMT6 | Produkt ist nicht verfügbar | |||||||||||||||
RSQ035N03 | ROHM | 09+ | auf Bestellung 2618 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
RSQ035N03FRATR | ROHM SEMICONDUCTOR | RSQ035N03FRATR SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
RSQ035N03HZGTR | Rohm Semiconductor | Description: MOSFET N-CH 30V 3.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 1482 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ035N03HZGTR | ROHM | Description: ROHM - RSQ035N03HZGTR - Leistungs-MOSFET, n-Kanal, 30 V, 3.5 A, 0.044 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 3.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.25W Bauform - Transistor: TSMT Anzahl der Pins: 6Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.044ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2003 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
RSQ035N03HZGTR | Rohm Semiconductor | Description: MOSFET N-CH 30V 3.5A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||
RSQ035N03HZGTR | ROHM Semiconductor | MOSFETs Nch 30V 3.5A Small Signal MOSFET. RSQ035N03HZG is a automotive grade MOSFET with G-S protection diode, suitable for switching. | auf Bestellung 6553 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ035N03HZGTR | Rohm Semiconductor | Trans MOSFET N-CH 30V 3.5A Automotive AEC-Q101 6-Pin TSMT T/R | auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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RSQ035N03HZGTR | ROHM | Description: ROHM - RSQ035N03HZGTR - Leistungs-MOSFET, n-Kanal, 30 V, 3.5 A, 0.044 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 3.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.25W Bauform - Transistor: TSMT Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.044ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1783 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
RSQ035N03TR | ROHM Semiconductor | MOSFET Load Switching Nch; 30V; 3.5A | Produkt ist nicht verfügbar | |||||||||||||||
RSQ035N03TR | Rohm Semiconductor | Description: MOSFET N-CH 30V 3.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V | auf Bestellung 2079 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ035N03TR | Rohm Semiconductor | Description: MOSFET N-CH 30V 3.5A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||
RSQ035N06HZGTR | Rohm Semiconductor | Trans MOSFET N-CH 60V 3.5A Automotive AEC-Q101 6-Pin TSMT T/R | auf Bestellung 2645 Stücke: Lieferzeit 14-21 Tag (e) |
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RSQ035N06HZGTR | Rohm Semiconductor | Description: MOSFET N-CH 60V 3.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 8737 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ035N06HZGTR | Rohm Semiconductor | Trans MOSFET N-CH 60V 3.5A Automotive AEC-Q101 6-Pin TSMT T/R | auf Bestellung 2845 Stücke: Lieferzeit 14-21 Tag (e) |
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RSQ035N06HZGTR | ROHM Semiconductor | MOSFETs SOT457 N CHAN 60V | auf Bestellung 5807 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ035N06HZGTR | Rohm Semiconductor | Description: MOSFET N-CH 60V 3.5A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ035N06HZGTR | Rohm Semiconductor | Trans MOSFET N-CH 60V 3.5A Automotive AEC-Q101 6-Pin TSMT T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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RSQ035N06HZGTR | ROHM SEMICONDUCTOR | RSQ035N06HZGTR SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
RSQ035P03 | ROHM | 07+ SOT23-6 | auf Bestellung 2870 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
RSQ035P03 | ROHM | SOT163 | auf Bestellung 74000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
RSQ035P03 Produktcode: 52347 | Verschiedene Bauteile > Verschiedene Bauteile 2 | Produkt ist nicht verfügbar | ||||||||||||||||
RSQ035P03 | ROHM | auf Bestellung 51200 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
RSQ035P03 | ROHM | 09+ | auf Bestellung 63084 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
RSQ035P03 | ROHM | SOT26/ | auf Bestellung 7 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
RSQ035P03 TR | ROHM | auf Bestellung 9200 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
RSQ035P03 TR | ROHM | SOT26 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
RSQ035P03 TR | ROHM | SOT26/SOT363 | auf Bestellung 2408 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
RSQ035P03/TM | NEWINORI | auf Bestellung 6518 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
RSQ035P03/TM | ROHM | 09+ | auf Bestellung 3018 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
RSQ035P03FRATR | ROHM SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
RSQ035P03FRATR | ROHM SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
RSQ035P03HZGTR | Rohm Semiconductor | Description: MOSFET P-CH 30V 3.5A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||
RSQ035P03HZGTR | Rohm Semiconductor | Trans MOSFET P-CH 30V 3.5A Automotive AEC-Q101 6-Pin TSMT T/R | auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) |
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RSQ035P03HZGTR | ROHM Semiconductor | MOSFETs Automotive Pch -30V -3.5A Small Signal MOSFET. RSQ035P03HZG is a MOSFET for switching applications. This is a high-reliability product of automotive grade qualified to AEC-Q101. | auf Bestellung 106 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ035P03HZGTR | ROHM | Description: ROHM - RSQ035P03HZGTR - Leistungs-MOSFET, p-Kanal, 30 V, 3.5 A, 0.045 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 3.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.25W Bauform - Transistor: TSMT Anzahl der Pins: 6Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.045ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 5040 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
RSQ035P03HZGTR | Rohm Semiconductor | Description: MOSFET P-CH 30V 3.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 2780 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ035P03HZGTR | Rohm Semiconductor | Trans MOSFET P-CH 30V 3.5A Automotive AEC-Q101 6-Pin TSMT T/R | auf Bestellung 2963 Stücke: Lieferzeit 14-21 Tag (e) |
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RSQ035P03HZGTR | ROHM | Description: ROHM - RSQ035P03HZGTR - Leistungs-MOSFET, p-Kanal, 30 V, 3.5 A, 0.045 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 3.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.25W Bauform - Transistor: TSMT Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.045ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4750 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
RSQ035P03TR | ROHM | 08+ BGA | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
RSQ035P03TR | Rohm Semiconductor | Description: MOSFET P-CH 30V 3.5A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||
RSQ035P03TR | Rohm Semiconductor | Description: MOSFET P-CH 30V 3.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V | auf Bestellung 2550 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ035P03TR | ROHM Semiconductor | MOSFETs P-CH 30V 3.5A TSMT6 | auf Bestellung 1059 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ035R03 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
RSQ045N03 | RSQ045N03 Транзисторы | auf Bestellung 105 Stücke: Lieferzeit 7-21 Tag (e) | ||||||||||||||||
RSQ045N03HZGTR | Rohm Semiconductor | Description: MOSFET N-CH 30V 4.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ045N03HZGTR | ROHM | Description: ROHM - RSQ045N03HZGTR - Leistungs-MOSFET, n-Kanal, 30 V, 4.5 A, 0.027 ohm, TSMT, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.25W Bauform - Transistor: TSMT Anzahl der Pins: 6Pins Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.027ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4111 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
RSQ045N03HZGTR | Rohm Semiconductor | Description: MOSFET N-CH 30V 4.5A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||
RSQ045N03HZGTR | ROHM Semiconductor | MOSFETs Automotive Nch 30V 4.5A Small Signal MOSFET. RSQ045N03HZG is a MOSFET for switching applications. This is a high-reliability product of automotive grade qualified to AEC-Q101. | auf Bestellung 5233 Stücke: Lieferzeit 10-14 Tag (e) |
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RSQ045N03HZGTR | ROHM | Description: ROHM - RSQ045N03HZGTR - Leistungs-MOSFET, n-Kanal, 30 V, 4.5 A, 0.027 ohm, TSMT, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 4.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.25W Bauform - Transistor: TSMT Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.027ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4281 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
RSQ045N03TR | ROHM Semiconductor | MOSFETs N-CH 30V 4.5A TSMT6 | Produkt ist nicht verfügbar | |||||||||||||||
RSQ045N03TR | Rohm Semiconductor | Description: MOSFET N-CH 30V 4.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||
RSQ045N03TR | Rohm Semiconductor | Description: MOSFET N-CH 30V 4.5A TSMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||
RSQ045N03TR | ROHM | auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
RSQ045P03 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
RSQ1.2 | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
RSQ1.4 | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
RSQ200 | YAGEO | Description: RESISTOR KIT 1-10M 1/4W 33800PCS | Produkt ist nicht verfügbar | |||||||||||||||
RSQ25-KIT | YAGEO | Description: FILM RESISTOR KIT Packaging: Bulk Resistance (Ohms): 1 ~ 1M Power (Watts): 0.25W, 1/4W Tolerance: ±5% Mounting Type: Through Hole Quantity: 4225 Pieces (169 Values - 25 Each) Kit Type: Carbon Film Packages Included: Axial Part Status: Active | auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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