Produkte > HP8
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
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HP8 | Amphenol FCI | Amphenol | Produkt ist nicht verfügbar | |||||||||||||||
HP8-ZH-BPL5 | RSCC Aerospace & Defense | WIRE: INSULATED ELECTRIC CONDUCTOR Of copper not fitted with connectors | auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) |
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HP802 | HUAYAMICRO | 08+ | auf Bestellung 13 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
HP804 | HUAYA MICRO | 2008 | auf Bestellung 9930 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
HP8060-9RG | Bel Power Solutions | HP8060-9RG | Produkt ist nicht verfügbar | |||||||||||||||
HP8060-9RG | Bel Power Solutions | Switching Power Supplies 187W 16.8-137.5Vi 5.1/24/24Vo 12/2.5A | Produkt ist nicht verfügbar | |||||||||||||||
HP8060-9RG | Bel Power Solutions | Description: POWER SUPPLYHP8060-9RGDC-DCIN 16 | Produkt ist nicht verfügbar | |||||||||||||||
HP8120A | HENWOOD | 0106+ | auf Bestellung 127 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
HP8126A | HENWOOD | 0136+ | auf Bestellung 11365 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
HP8127A | HENWOOD | 2002 | auf Bestellung 6220 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
HP8128A | HENWOOD | 2002 | auf Bestellung 1600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
HP820 | PORTASOL | Category: Gas soldering irons & torches Description: Burner: gas; 820W; 1350°C; 30min; piezoelectric lighter Height: 133mm Nominal life: 30min Type of burner: gas Power: 820W Flame temperature: 1350°C Soldering equipment features: flame adjustment; igniter lock; piezoelectric lighter; possibility to fix on a stand; sight-glass for gas level indication in the bottle; standard refilling valve Applications of soldering equipment: for heat shrinking; for singeing Kind of gas: butane Standard equipment: stand Anzahl je Verpackung: 1 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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HP820 | PORTASOL | Category: Gas soldering irons & torches Description: Burner: gas; 820W; 1350°C; 30min; piezoelectric lighter Height: 133mm Nominal life: 30min Type of burner: gas Power: 820W Flame temperature: 1350°C Soldering equipment features: flame adjustment; igniter lock; piezoelectric lighter; possibility to fix on a stand; sight-glass for gas level indication in the bottle; standard refilling valve Applications of soldering equipment: for heat shrinking; for singeing Kind of gas: butane Standard equipment: stand | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8210 | PRO ELEC | Description: PRO ELEC - HP8210 - Steckverbinder-Adapter, Kaltgerätestecker (IEC 60320 C14), 1 -polig, Stecker tariffCode: 85369010 productTraceability: No Zielpositionen: 2Ways rohsCompliant: YES Ausführung Zielsteckverbinder: Buchse Steckverbinder zwischen versch. Baureihen B: Kaltgerätebuchse (IEC C13), x2 euEccn: NLR Steckverbinder zwischen versch. Baureihen A: Kaltgerätestecker (IEC 60320 C14) hazardous: false rohsPhthalatesCompliant: TBA Ausführung Ausgangssteckverbinder: Stecker Ausgangspositionen: 1Ways usEccn: EAR99 | auf Bestellung 411 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
HP838H8 | Nibco | Description: S585HP66LF-HC 3/4 SLD X 3/4 HOSE | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
HP840X8 | Nibco | Description: PC-585HP-LF 3/4 PRESS BALL VALVE | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
HP843X8 | Nibco | Description: PC585HPLF-HC 3/4 PRESS X 3/4 HOS | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
HP8JE5TB1 | ROHM Semiconductor | MOSFET -100V 12.5A, Dual Pch+Pch, HSOP8, Power MOSFET: HP8JE5 is a low on-resistance MOSFET ideal for Switching and Motor drives applications. | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8K | auf Bestellung 7820 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
HP8K22TB | Rohm Semiconductor | Trans MOSFET N-CH 30V 27A/57A 8-Pin HSOP EP T/R | auf Bestellung 2445 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8K22TB | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 27A/57A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A, 57A Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8K22TB | Rohm Semiconductor | Trans MOSFET N-CH 30V 27A/57A 8-Pin HSOP EP T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8K22TB | ROHM Semiconductor | MOSFETs 30V Nch+Nch Si MOSFET | auf Bestellung 30454 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8K22TB | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 27A/57A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A, 57A Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active | auf Bestellung 9080 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8K22TB | Rohm Semiconductor | Trans MOSFET N-CH 30V 27A/57A 8-Pin HSOP EP T/R | auf Bestellung 368 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8K24 | ROHM Semiconductor | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
HP8K24TB | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 15A/27A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 27A (Tc), 26A (Ta), 80A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 2410pF @ 15V Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V, 3mOhm @ 26A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 36nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active | auf Bestellung 9426 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8K24TB | Rohm Semiconductor | Trans MOSFET N-CH 30V 27A/80A 8-Pin HSOP EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8K24TB | ROHM | Description: ROHM - HP8K24TB - Dual-MOSFET, n-Kanal, 30 V, 27 A, 0.0067 ohm, HSOP, Oberflächenmontage SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||
HP8K24TB | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 15A/27A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 27A (Tc), 26A (Ta), 80A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 2410pF @ 15V Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V, 3mOhm @ 26A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 36nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8K24TB | Rohm Semiconductor | Trans MOSFET N-CH 30V 27A/80A 8-Pin HSOP EP T/R | auf Bestellung 2290 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8K24TB | ROHM | Description: ROHM - HP8K24TB - Dual-MOSFET, n-Kanal, 30 V, 27 A, 0.0067 ohm, HSOP, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 27 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 3 Gate-Source-Schwellenspannung, max.: 2.5 Bauform - Transistor: HSOP Anzahl der Pins: 8 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0067 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||
HP8K24TB | ROHM Semiconductor | MOSFET HP8K24 is the high reliability transistor, suitable for switching and DC/DC converter. | auf Bestellung 2412 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8K24TB | Rohm Semiconductor | Trans MOSFET N-CH 30V 27A/80A 8-Pin HSOP EP T/R | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8KA1TB | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 14A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 10mA Supplier Device Package: 8-HSOP | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KA1TB | ROHM SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 14A; Idm: 28A; 3W; HSOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Pulsed drain current: 28A Power dissipation: 3W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common drain | Produkt ist nicht verfügbar | |||||||||||||||
HP8KA1TB | ROHM Semiconductor | MOSFET NCH+NCH 30V POWER MOSFET | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KA1TB | Rohm Semiconductor | Trans MOSFET N-CH 30V 14A 8-Pin HSOP EP T/R | auf Bestellung 1170 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8KA1TB | Rohm Semiconductor | Description: MOSFET 2N-CH 30V 14A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 14A Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 10mA Supplier Device Package: 8-HSOP | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KA1TB | ROHM SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 14A; Idm: 28A; 3W; HSOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Pulsed drain current: 28A Power dissipation: 3W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common drain Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
HP8KB6TB1 | ROHM Semiconductor | MOSFET 40V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KB6 is a low on-resistance MOSFET ideal for switching applications. | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KB6TB1 | Rohm Semiconductor | Trans MOSFET N-CH 40V 10.5A 8-Pin HSOP EP T/R | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8KB6TB1 | Rohm Semiconductor | Description: 40V 24A, DUAL NCH+NCH, HSOP8, PO Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 21W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 24A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V Rds On (Max) @ Id, Vgs: 15.7mOhm @ 10.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KB6TB1 | Rohm Semiconductor | Trans MOSFET N-CH 40V 10.5A 8-Pin HSOP EP T/R | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8KB6TB1 | Rohm Semiconductor | Description: 40V 24A, DUAL NCH+NCH, HSOP8, PO Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 21W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 24A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V Rds On (Max) @ Id, Vgs: 15.7mOhm @ 10.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KB7TB1 | Rohm Semiconductor | Description: 40V 24A, DUAL NCH+NCH, HSOP8, PO Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 26W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 24A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 20V Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KB7TB1 | Rohm Semiconductor | HP8KB7TB1 | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8KB7TB1 | Rohm Semiconductor | Description: 40V 24A, DUAL NCH+NCH, HSOP8, PO Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 26W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 24A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 20V Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KB7TB1 | ROHM Semiconductor | MOSFET 40V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KB7 is a low on-resistance MOSFET ideal for switching applications. | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KB7TB1 | Rohm Semiconductor | HP8KB7TB1 | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8KC6TB1 | Rohm Semiconductor | Description: 60V 23A, DUAL NCH+NCH, HSOP8, PO Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 21W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 23A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V Rds On (Max) @ Id, Vgs: 27mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KC6TB1 | ROHM Semiconductor | MOSFET 60V 23A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KC6 is a low on-resistance MOSFET ideal for switching applications. | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KC6TB1 | Rohm Semiconductor | Trans MOSFET N-CH 60V 8.5A 8-Pin HSOP EP T/R | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8KC6TB1 | Rohm Semiconductor | Description: 60V 23A, DUAL NCH+NCH, HSOP8, PO Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 21W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 23A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V Rds On (Max) @ Id, Vgs: 27mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KC7TB1 | Rohm Semiconductor | HP8KC7TB1 | auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8KC7TB1 | Rohm Semiconductor | Description: 60V 24A, DUAL NCH+NCH, HSOP8, PO Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 26W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 24A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KC7TB1 | Rohm Semiconductor | HP8KC7TB1 | auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8KC7TB1 | ROHM Semiconductor | MOSFET 60V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KC7 is a low on-resistance MOSFET ideal for switching applications. | auf Bestellung 5000 Stücke: Lieferzeit 163-167 Tag (e) |
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HP8KC7TB1 | Rohm Semiconductor | Description: 60V 24A, DUAL NCH+NCH, HSOP8, PO Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 26W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 24A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KE6TB1 | Rohm Semiconductor | Description: MOSFET 2N-CH 100V 6A/17A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 21W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 17A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V Rds On (Max) @ Id, Vgs: 54mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KE6TB1 | Rohm Semiconductor | Trans MOSFET N-CH 100V 6A 8-Pin HSOP EP T/R | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
HP8KE6TB1 | ROHM Semiconductor | MOSFET 100V 17A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KE6 is a low on-resistance MOSFET ideal for switching applications. | auf Bestellung 4953 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KE6TB1 | ROHM | Description: ROHM - HP8KE6TB1 - Dual-MOSFET, Zweifach n-Kanal, 100 V, 17 A, 0.041 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 17A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - euEccn: NLR Bauform - Transistor: HSOP Anzahl der Pins: 8Pin(s) Produktpalette: PW Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.041ohm productTraceability: No Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 21W Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
HP8KE6TB1 | Rohm Semiconductor | Description: MOSFET 2N-CH 100V 6A/17A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 21W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 17A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V Rds On (Max) @ Id, Vgs: 54mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KE6TB1 | Rohm Semiconductor | Trans MOSFET N-CH 100V 6A 8-Pin HSOP EP T/R | auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
HP8KE6TB1 | ROHM | Description: ROHM - HP8KE6TB1 - Dual-MOSFET, Zweifach n-Kanal, 100 V, 17 A, 0.041 ohm tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
HP8KE7TB1 | ROHM Semiconductor | MOSFET 100V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KE7 is a low on-resistance MOSFET ideal for switching applications. | auf Bestellung 4990 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8KE7TB1 | Rohm Semiconductor | HP8KE7TB1 | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8KE7TB1 | Rohm Semiconductor | HP8KE7TB1 | auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8M31TB1 | ROHM | Description: ROHM - HP8M31TB1 - Dual-MOSFET, n- und p-Kanal, 60 V, 60 V, 8.5 A, 8.5 A, 0.046 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 8.5A Dauer-Drainstrom Id, p-Kanal: 8.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.046ohm Verlustleistung, p-Kanal: 7W euEccn: NLR Bauform - Transistor: HSOP Anzahl der Pins: 8Pin(s) Produktpalette: PW Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.046ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n- und p-Kanal Verlustleistung, n-Kanal: 7W Betriebstemperatur, max.: 150°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2450 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
HP8M31TB1 | Rohm Semiconductor | Trans MOSFET N/P-CH 60V 8.5A 8-Pin HSOP EP T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8M31TB1 | ROHM SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 60/-60V Drain current: 8.5/-8.5A Pulsed drain current: 18A Power dissipation: 7W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 73/80mΩ Mounting: SMD Gate charge: 12.3/38nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
HP8M31TB1 | Rohm Semiconductor | Description: MOSFET N/P-CH 60V 8.5A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 30V, 2300pF @ 30V Rds On (Max) @ Id, Vgs: 65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 38nC @ 10V Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
HP8M31TB1 | ROHM Semiconductor | MOSFET HP8M31TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for motor drive. | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8M31TB1 | Rohm Semiconductor | Trans MOSFET N/P-CH 60V 8.5A 8-Pin HSOP EP T/R | auf Bestellung 2180 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8M31TB1 | ROHM | Description: ROHM - HP8M31TB1 - Dual-MOSFET, n- und p-Kanal, 60 V, 60 V, 8.5 A, 8.5 A, 0.046 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 8.5A Dauer-Drainstrom Id, p-Kanal: 8.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.046ohm Verlustleistung, p-Kanal: 7W euEccn: NLR Bauform - Transistor: HSOP Anzahl der Pins: 8Pin(s) Produktpalette: PW Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.046ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n- und p-Kanal Verlustleistung, n-Kanal: 7W Betriebstemperatur, max.: 150°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2450 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
HP8M31TB1 | Rohm Semiconductor | Description: MOSFET N/P-CH 60V 8.5A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 30V, 2300pF @ 30V Rds On (Max) @ Id, Vgs: 65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 38nC @ 10V Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-HSOP Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||
HP8M31TB1 | ROHM SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 60/-60V Drain current: 8.5/-8.5A Pulsed drain current: 18A Power dissipation: 7W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 73/80mΩ Mounting: SMD Gate charge: 12.3/38nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | Produkt ist nicht verfügbar | |||||||||||||||
HP8M51TB1 | ROHM Semiconductor | MOSFET HP8M51TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching application. | auf Bestellung 973 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8M51TB1 | Rohm Semiconductor | Trans MOSFET N/P-CH 100V 4.5A 8-Pin HSOP EP T/R | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
HP8M51TB1 | ROHM SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 4.5A; Idm: 18A; 7W Kind of package: reel; tape Mounting: SMD Pulsed drain current: 18A Power dissipation: 7W Gate charge: 15/26.2nC Polarisation: unipolar Drain current: 4.5A Kind of channel: enhanced Drain-source voltage: 100/-100V Type of transistor: N/P-MOSFET Case: HSOP8 On-state resistance: 180/320mΩ Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||
HP8M51TB1 | Rohm Semiconductor | Description: MOSFET N/P-CH 100V 4.5A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP | auf Bestellung 2458 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8M51TB1 | Rohm Semiconductor | Trans MOSFET N/P-CH 100V 4.5A 8-Pin HSOP EP T/R | auf Bestellung 1465 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8M51TB1 | ROHM SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 4.5A; Idm: 18A; 7W Kind of package: reel; tape Mounting: SMD Pulsed drain current: 18A Power dissipation: 7W Gate charge: 15/26.2nC Polarisation: unipolar Drain current: 4.5A Kind of channel: enhanced Drain-source voltage: 100/-100V Type of transistor: N/P-MOSFET Case: HSOP8 On-state resistance: 180/320mΩ Gate-source voltage: ±20V Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
HP8M51TB1 | Rohm Semiconductor | Description: MOSFET N/P-CH 100V 4.5A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP | Produkt ist nicht verfügbar | |||||||||||||||
HP8MA2TB1 | Rohm Semiconductor | Trans MOSFET N/P-CH 30V 18A/15A 8-Pin HSOP EP T/R | auf Bestellung 1854 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8MA2TB1 | ROHM SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 18/15A; Idm: 48A; 7W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 18/15A Pulsed drain current: 48A Power dissipation: 7W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 16.4/29mΩ Mounting: SMD Gate charge: 22/25nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
HP8MA2TB1 | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 18A/15A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP | Produkt ist nicht verfügbar | |||||||||||||||
HP8MA2TB1 | ROHM SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 18/15A; Idm: 48A; 7W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 18/15A Pulsed drain current: 48A Power dissipation: 7W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 16.4/29mΩ Mounting: SMD Gate charge: 22/25nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
HP8MA2TB1 | Rohm Semiconductor | Trans MOSFET N/P-CH 30V 18A/15A 8-Pin HSOP EP T/R | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
HP8MA2TB1 | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 18A/15A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP | auf Bestellung 1858 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8MA2TB1 | ROHM Semiconductor | MOSFETs HP8MA2 is low on-resistance and small surface mount package MOSFET for switching application. | auf Bestellung 1855 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8MB5TB1 | Rohm Semiconductor | Trans MOSFET N/P-CH 40V 6A/7A 8-Pin HSOP EP T/R | auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8MB5TB1 | Rohm Semiconductor | Description: 40V 16.5A, DUAL NCH+PCH, HSOP8, Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 20W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V Rds On (Max) @ Id, Vgs: 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8MB5TB1 | ROHM Semiconductor | MOSFET 40V 16.5A, Dual Nch+Pch, HSOP8, Power MOSFET: HP8MB5 is a low on-resistance MOSFET ideal for switching applications. | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8MB5TB1 | Rohm Semiconductor | Description: 40V 16.5A, DUAL NCH+PCH, HSOP8, Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 20W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V Rds On (Max) @ Id, Vgs: 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8MC5TB1 | ROHM | Description: ROHM - HP8MC5TB1 - Dual-MOSFET, Komplementärer n- und p-Kanal, 60 V, 60 V, 12 A, 12 A, 0.09 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 12A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 12A Drain-Source-Durchgangswiderstand, p-Kanal: 0.096ohm Verlustleistung, p-Kanal: 20W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: HSOP Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.09ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 20W Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 97 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
HP8MC5TB1 | Rohm Semiconductor | Trans MOSFET N/P-CH 60V 4A/5A 8-Pin HSOP EP T/R | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
HP8MC5TB1 | ROHM Semiconductor | MOSFET 60V 12A, Dual Nch+Pch, HSOP8, Power MOSFET: HP8MC5 is a low on-resistance MOSFET ideal for switching applications. | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8ME5TB1 | Rohm Semiconductor | Description: MOSFET N/P-CH 100V 3A/8.5A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 20W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 8.5A (Tc), 3A (Ta), 8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V, 590pF @ 50V Rds On (Max) @ Id, Vgs: 193mOhm @ 3A, 10V, 273mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V, 19.7nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8ME5TB1 | Rohm Semiconductor | Trans MOSFET N/P-CH 100V 3A 8-Pin HSOP EP T/R | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
HP8ME5TB1 | ROHM | Description: ROHM - HP8ME5TB1 - Dual-MOSFET, n- und p-Kanal, 100 V, 100 V, 8.5 A, 8 A, 0.148 ohm tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
HP8ME5TB1 | Rohm Semiconductor | Description: MOSFET N/P-CH 100V 3A/8.5A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 20W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 8.5A (Tc), 3A (Ta), 8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V, 590pF @ 50V Rds On (Max) @ Id, Vgs: 193mOhm @ 3A, 10V, 273mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V, 19.7nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8ME5TB1 | ROHM Semiconductor | MOSFET 100V 8.5A, Dual Nch+Pch, HSOP8, Power MOSFET: HP8ME5 is a low on-resistance MOSFET ideal for switching applications. | auf Bestellung 4926 Stücke: Lieferzeit 10-14 Tag (e) |
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HP8ME5TB1 | ROHM | Description: ROHM - HP8ME5TB1 - Dual-MOSFET, n- und p-Kanal, 100 V, 100 V, 8.5 A, 8 A, 0.148 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 100V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.21ohm Verlustleistung, p-Kanal: 20W euEccn: NLR Bauform - Transistor: HSOP Anzahl der Pins: 8Pin(s) Produktpalette: PW Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.148ohm productTraceability: No Kanaltyp: n- und p-Kanal Verlustleistung, n-Kanal: 20W Betriebstemperatur, max.: 150°C SVHC: No SVHC (14-Jun-2023) | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
HP8ME5TB1 | Rohm Semiconductor | Trans MOSFET N/P-CH 100V 3A 8-Pin HSOP EP T/R | auf Bestellung 180 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8P | auf Bestellung 6230 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
HP8Q | auf Bestellung 4115 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
HP8S36 | ROHM Semiconductor | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
HP8S36TB | Rohm Semiconductor | Description: 30V NCH+NCH MIDDLE POWER MOSFET, Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 29W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A, 80A Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 15V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 32A, 10V Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Not For New Designs | Produkt ist nicht verfügbar | |||||||||||||||
HP8S36TB Produktcode: 174887 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||
HP8S36TB | Rohm Semiconductor | Trans MOSFET N-CH 30V 27A/80A 8-Pin HSOP EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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HP8S36TB | Rohm Semiconductor | Description: 30V NCH+NCH MIDDLE POWER MOSFET, Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 29W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 27A, 80A Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 15V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 32A, 10V Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP Part Status: Not For New Designs | Produkt ist nicht verfügbar | |||||||||||||||
HP8S36TB | ROHM Semiconductor | MOSFET 30V Nch+Nch Si MOSFET | Produkt ist nicht verfügbar |