Produkte > GD5
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||||
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| GD50 | Altech | Relay Sockets & Fixings Relay socket, dr, for PCB | auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD50 | Altech Corporation | Description: RELAY SOCKET DR FORPCB RM84RM85R Packaging: Bulk Part Status: Active | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD50 | RELPOL | Category: Electromagnetic Relays - Accessories Description: Socket; PIN: 8; 8A; 300VAC; PCB; for PCB; -40÷70°C; 31.5x13x9mm Type of relays accessories: socket Related items: RMB841; RMB851 Relay series: RM63; RM64; RM83; RM84; RM85; RM87L; RM87P; RM94 Rated voltage: 300V AC Operating temperature: -40...70°C Current rating: 8A Leads: for PCB Body dimensions: 31.5x13x9mm Number of pins: 8 OEM number: 2613510 Mounting: PCB | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50 Produktcode: 132797 | Verschiedene Bauteile > Other components 3 | Produkt ist nicht verfügbar | ||||||||||||||||||
| GD50 | RELPOL | Category: Electromagnetic Relays - Accessories Description: Socket; PIN: 8; 8A; 300VAC; PCB; for PCB; -40÷70°C; 31.5x13x9mm Type of relays accessories: socket Related items: RMB841; RMB851 Relay series: RM63; RM64; RM83; RM84; RM85; RM87L; RM87P; RM94 Rated voltage: 300V AC Operating temperature: -40...70°C Current rating: 8A Leads: for PCB Body dimensions: 31.5x13x9mm Number of pins: 8 OEM number: 2613510 Mounting: PCB Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD500033 | Sunbank / Souriau | Circular MIL Spec Backshells STS ASSEMBLY | Produkt ist nicht verfügbar | |||||||||||||||||
| GD500076 | Sunbank / Souriau | Circular MIL Spec Backshells STS ASSEMBLY | Produkt ist nicht verfügbar | |||||||||||||||||
| GD500566 | Sunbank / Souriau | Circular MIL Spec Backshells STS ASSEMBLY | Produkt ist nicht verfügbar | |||||||||||||||||
| GD509CJ | . | 08+ DIP | auf Bestellung 625 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD50FFX65C5S | STARPOWER SEMICONDUCTOR | GD50FFX65C5S IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50FFX65C5S | STARPOWER | Description: STARPOWER - GD50FFX65C5S - IGBT-Modul, Dreiphasen-Vollbrücke, 72 A, 1.45 V, 189 W, 150 °C, Modul tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench/Feldstop Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V Dauer-Kollektorstrom: 72A usEccn: EAR99 IGBT-Anschluss: Einpressmontage Kollektor-Emitter-Sättigungsspannung Vce(on): 1.45V Verlustleistung Pd: 189W euEccn: NLR Verlustleistung: 189W Bauform - Transistor: Modul Kollektor-Emitter-Spannung V(br)ceo: 650V Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V IGBT-Konfiguration: Dreiphasen-Vollbrücke productTraceability: No DC-Kollektorstrom: 72A Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD50FFY120C5S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Pulsed collector current: 100A Collector current: 50A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Max. off-state voltage: 1.2kV Case: C5 45mm Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50FFY120C5S | STARPOWER | Description: STARPOWER - GD50FFY120C5S - IGBT-Modul, Dreiphasen-Vollbrücke, 85 A, 1.7 V, 292 W, 150 °C, Module tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench/Feldstop Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.7V Dauer-Kollektorstrom: 85A usEccn: EAR99 IGBT-Anschluss: Einpressmontage Kollektor-Emitter-Sättigungsspannung Vce(on): 1.7V Verlustleistung Pd: 292W euEccn: NLR Verlustleistung: 292W Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 1.2kV Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV IGBT-Konfiguration: Dreiphasen-Vollbrücke productTraceability: No DC-Kollektorstrom: 85A Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50FFY120C5S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Pulsed collector current: 100A Collector current: 50A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Max. off-state voltage: 1.2kV Case: C5 45mm Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50FSX65L2S | STARPOWER SEMICONDUCTOR | GD50FSX65L2S IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50FSX65L2S | STARPOWER | Description: STARPOWER - GD50FSX65L2S - IGBT-Modul, Sechserpack, 89 A, 1.45 V, 258 W, 150 °C, Modul tariffCode: 85412900 Transistormontage: Modul rohsCompliant: YES IGBT-Technologie: Trench/Feldstop hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V Dauer-Kollektorstrom: 89A usEccn: EAR99 IGBT-Anschluss: Lötanschluss euEccn: NLR Verlustleistung: 258W Bauform - Transistor: Modul Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V IGBT-Konfiguration: Sechserpack productTraceability: No Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD50FSY120L3S | STARPOWER | Description: STARPOWER - GD50FSY120L3S - IGBT-Modul, Sechserpack, 100 A, 1.7 V, 380 W, 150 °C, Module tariffCode: 85412900 productTraceability: No Kollektor-Emitter-Spannung, max.: 1.2kV rohsCompliant: YES Verlustleistung: 380W euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.7V Betriebstemperatur, max.: 150°C usEccn: EAR99 Dauer-Kollektorstrom: 100A Produktpalette: - SVHC: No SVHC (23-Jan-2024) | auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD50FSY120L3S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2 Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge OE output; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 50A Case: L3.2 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Advanced Trench FS IGBT Mechanical mounting: screw | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50FSY120L3S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; Urmax: 1200V; Ic: 50A; L3.2 Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT three-phase bridge OE output; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 50A Case: L3.2 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 100A Technology: Advanced Trench FS IGBT Mechanical mounting: screw Anzahl je Verpackung: 16 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50HFU120C1S | STARPOWER | Description: STARPOWER - GD50HFU120C1S - IGBT-Modul, Halbbrücke, 78 A, 3.15 V, 414 W, 150 °C, Module tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: NPT IGBT [Standard] Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 3.15V Dauer-Kollektorstrom: 78A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 3.15V Verlustleistung Pd: 414W euEccn: NLR Verlustleistung: 414W Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 1.2kV Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV IGBT-Konfiguration: Halbbrücke productTraceability: No DC-Kollektorstrom: 78A Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD50HFU120C1S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Case: C1 34mm Mechanical mounting: screw Type of module: IGBT Technology: NPT Ultra Fast IGBT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Electrical mounting: FASTON connectors; screw | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50HFU120C1S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Case: C1 34mm Mechanical mounting: screw Type of module: IGBT Technology: NPT Ultra Fast IGBT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Electrical mounting: FASTON connectors; screw Anzahl je Verpackung: 24 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50HFU120C1SD | STARPOWER | Description: STARPOWER - GD50HFU120C1SD - IGBT-Modul, Halbbrücke, 82 A, 2.9 V, 440 W, 125 °C, Modul tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: NPT Ultra Fast IGBT hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.9V Dauer-Kollektorstrom: 82A usEccn: EAR99 IGBT-Anschluss: Schraubanschluss euEccn: NLR Verlustleistung: 440W Bauform - Transistor: Modul Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV IGBT-Konfiguration: Halbbrücke productTraceability: No Betriebstemperatur, max.: 125°C SVHC: To Be Advised | auf Bestellung 1584 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD50HFX170C1S | STARPOWER SEMICONDUCTOR | GD50HFX170C1S IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50HFX170C1S | STARPOWER | Description: STARPOWER - GD50HFX170C1S - IGBT-Modul, Halbbrücke, 100 A, 1.85 V, 418 W, 150 °C, Module tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench-Transistor Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.85V Dauer-Kollektorstrom: 100A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 1.85V Verlustleistung Pd: 418W euEccn: NLR Verlustleistung: 418W Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 1.7kV Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.7kV IGBT-Konfiguration: Halbbrücke productTraceability: No DC-Kollektorstrom: 100A Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD50HFX65C1S | STARPOWER SEMICONDUCTOR | GD50HFX65C1S IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50HFX65C1S | STARPOWER | Description: STARPOWER - GD50HFX65C1S - IGBT-Modul, Halbbrücke, 75 A, 1.45 V, 205 W, 150 °C, Modul tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench-Transistor Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V Dauer-Kollektorstrom: 75A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 1.45V Verlustleistung Pd: 205W euEccn: NLR Verlustleistung: 205W Bauform - Transistor: Modul Kollektor-Emitter-Spannung V(br)ceo: 650V Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V IGBT-Konfiguration: Halbbrücke productTraceability: No DC-Kollektorstrom: 75A Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD50HHU120C5S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: NPT Ultra Fast IGBT Topology: H-bridge Case: C5 45mm Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50HHU120C5S | STARPOWER | Description: STARPOWER - GD50HHU120C5S - IGBT-Modul, H-Brücke, 77 A, 2.9 V, 396 W, 125 °C, Module IGBT-Technologie: NPT Ultra Fast IGBT Sperrschichttemperatur Tj, max.: 125 Kollektor-Emitter-Sättigungsspannung: 2.9 Dauer-Kollektorstrom: 77 IGBT-Anschluss: Einpressmontage Kollektor-Emitter-Sättigungsspannung Vce(on): 2.9 Verlustleistung Pd: 396 Verlustleistung: 396 Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 1.2 Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2 IGBT-Konfiguration: H-Brücke DC-Kollektorstrom: 77 Betriebstemperatur, max.: 125 SVHC: No SVHC (25-Jun-2020) | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD50HHU120C5S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 100A Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: NPT Ultra Fast IGBT Topology: H-bridge Case: C5 45mm | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50MPS12-CAL | GeneSiC Semiconductor | 1200V 50A Bare Chip SiC Schottky MPS, Waffle Pack/s | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50MPS12H | GeneSiC Semiconductor | 1200V 50A TO-247-2 SiC Schottky MPS | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50MPS12H | GeneSiC Semiconductor | Description: DIODE SIL CARB 1.2KV 92A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1835pF @ 1V, 1MHz Current - Average Rectified (Io): 92A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Current - Reverse Leakage @ Vr: 15 µA @ 1200 V | auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD50MPS12H | GeneSiC Semiconductor | Silicon Carbide Schottky Diode | auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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| GD50MPS12H | GeneSiC Semiconductor | Silicon Carbide Schottky Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50MPS12H | GeneSiC Semiconductor | Silicon Carbide Schottky Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50MPS12H | GeneSiC Semiconductor | SiC Schottky Diodes 1200V 50A TO-247-2 SiC Schottky MPS | auf Bestellung 1030 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD50MPS12H | GeneSiC Semiconductor | Silicon Carbide Schottky Diode | auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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| GD50PIT120C6S Produktcode: 144882 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| GD50PIX120C6S Produktcode: 194384 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| GD50PIX65C5S | STARPOWER | Description: STARPOWER - GD50PIX65C5S - IGBT-Modul, PIM-Dreiphasen-Eingangsgleichrichter, 72 A, 1.45 V, 148 W, 150 °C, Modul tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench/Feldstop Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V Dauer-Kollektorstrom: 72A usEccn: EAR99 IGBT-Anschluss: Einpressmontage Kollektor-Emitter-Sättigungsspannung Vce(on): 1.45V Verlustleistung Pd: 148W euEccn: NLR Verlustleistung: 148W Bauform - Transistor: Modul Kollektor-Emitter-Spannung V(br)ceo: 650V Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V IGBT-Konfiguration: PIM-Dreiphasen-Eingangsgleichrichter productTraceability: No DC-Kollektorstrom: 72A Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD50PIX65C5S | STARPOWER SEMICONDUCTOR | GD50PIX65C5S IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50PIY120C5SN | STARPOWER SEMICONDUCTOR | GD50PIY120C5SN IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50PIY120C5SN | STARPOWER | Description: STARPOWER - GD50PIY120C5SN - IGBT-Modul, PIM-Dreiphasen-Eingangsgleichrichter, 85 A, 1.7 V, 292 W, 150 °C, Module IGBT-Technologie: Trench/Feldstop Sperrschichttemperatur Tj, max.: 150 Kollektor-Emitter-Sättigungsspannung: 1.7 Dauer-Kollektorstrom: 85 IGBT-Anschluss: Einpressmontage Kollektor-Emitter-Sättigungsspannung Vce(on): 1.7 Verlustleistung Pd: 292 Verlustleistung: 292 Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 1.2 Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2 IGBT-Konfiguration: PIM-Dreiphasen-Eingangsgleichrichter DC-Kollektorstrom: 85 Betriebstemperatur, max.: 150 SVHC: No SVHC (25-Jun-2020) | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50PIY120C6SN | STARPOWER SEMICONDUCTOR | GD50PIY120C6SN IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50PIY120C6SN | STARPOWER | Description: STARPOWER - GD50PIY120C6SN - IGBT-Modul, PIM, 62 A, 1.7 V, 218 W, 150 °C, Modul tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench-Transistor Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.7V Dauer-Kollektorstrom: 62A usEccn: EAR99 IGBT-Anschluss: Einpressmontage Kollektor-Emitter-Sättigungsspannung Vce(on): 1.7V Verlustleistung Pd: 218W euEccn: NLR Verlustleistung: 218W Bauform - Transistor: Modul Kollektor-Emitter-Spannung V(br)ceo: 1.2kV Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV IGBT-Konfiguration: PIM productTraceability: No DC-Kollektorstrom: 62A Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD50PJX65L3S | STARPOWER SEMICONDUCTOR | GD50PJX65L3S IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||||
| GD50PJX65L3S | STARPOWER | Description: STARPOWER - GD50PJX65L3S - IGBT-Modul, PIM-Dreiphasen-Eingangsgleichrichter, 91 A, 1.45 V, 264 W, 150 °C, Modul tariffCode: 85412900 Transistormontage: Modul rohsCompliant: YES IGBT-Technologie: Trench/Feldstop hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V Dauer-Kollektorstrom: 91A usEccn: EAR99 IGBT-Anschluss: Lötanschluss euEccn: NLR Verlustleistung: 264W Bauform - Transistor: Modul Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V IGBT-Konfiguration: PIM-Dreiphasen-Eingangsgleichrichter productTraceability: No Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD52R090NB | Thinking Electronics Industrial Co. | Description: Gas Discharge Tube 2-Electrodes Tolerance: ±20% Packaging: Bag Package / Case: Cylinder No Lead Mounting Type: User Defined Voltage - DC Spark Over (Nom): 90 V Impulse Discharge Current (8/20µs): 5000A (5kA) Fail Short: No Part Status: Active Number of Poles: 2 | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD53-21 | Laird Technologies IAS | Description: ANT GRID 21DBI 5.1-5.3GHZ N FEM | Produkt ist nicht verfügbar | |||||||||||||||||
| GD53-21 | Laird | Antennas Grid,Wire,Fixed,NF | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| GD53-25 | TE Connectivity / Laird External Antennas | Antennas Grid,Wire,Fixed,NF | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD53-25 | Laird Technologies IAS | Description: ANT GRID 25DBI 5.1-5.3GHZ N FEM | Produkt ist nicht verfügbar | |||||||||||||||||
| GD53-28 | Laird Technologies IAS | Description: ANT GRID 28DBI 5.1-5.3GHZ N FEM | Produkt ist nicht verfügbar | |||||||||||||||||
| GD53-28 | Laird | Antennas Grid,Wire,Fixed,NF | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5401T-41QC-A-TAB1A | . | 08+ QFP | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5401T-41QCA-TAB1A | CIRRUS | QFP-128 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5425-TVQC-B-AEW1P | auf Bestellung 192 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| GD5429-86QC-C | auf Bestellung 2186 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| GD5430 | NEC | 95+ | auf Bestellung 1773 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD5434-QC | QFP | auf Bestellung 47 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| GD5434-QC | 95 | auf Bestellung 47 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| GD5446 | 01+ | auf Bestellung 95 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| GD5465-HC-C-00001 | auf Bestellung 1192 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| GD5465-HC-C-00005 | auf Bestellung 616 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| GD5530622MA6N | KYOCERA AVX | Description: MICRO-W SLC Tolerance: ±20% Packaging: Tray Voltage - Rated: 25V Package / Case: Nonstandard SMD Temperature Coefficient: X7R Size / Dimension: 0.055" L x 0.055" W (1.40mm x 1.40mm) Mounting Type: Surface Mount, SLCC Operating Temperature: -55°C ~ 125°C Applications: General Purpose Thickness (Max): 0.007" (0.18mm) Capacitance: 6200 pF | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5530622ZA6N | KYOCERA AVX | Description: MICRO-W SLC Tolerance: -20%, +80% Packaging: Tray Voltage - Rated: 25V Package / Case: Nonstandard SMD Temperature Coefficient: X7R Size / Dimension: 0.055" L x 0.055" W (1.40mm x 1.40mm) Mounting Type: Surface Mount, SLCC Operating Temperature: -55°C ~ 125°C Applications: General Purpose Thickness (Max): 0.007" (0.18mm) Capacitance: 6200 pF | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55B01GEBIRY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55B01GEFIRR | GigaDevice Semiconductor (HK) Limited | Description: 1GBIT, 3.3V, SOP16 300MIL, INDUS Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Active Memory Interface: SPI - Quad I/O, QPI, DTR Memory Organization: 128M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55B01GEFIRR | GigaDevice | NOR Flash | auf Bestellung 717 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD55B01GEFIRR | GigaDevice Semiconductor (HK) Limited | Description: 1GBIT, 3.3V, SOP16 300MIL, INDUS Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Active Memory Interface: SPI - Quad I/O, QPI, DTR Memory Organization: 128M x 8 | auf Bestellung 909 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD55B01GEFJRR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55B01GEYIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55B02GEBIRY | GigaDevice | NOR Flash | auf Bestellung 4765 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD55F512MFWIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55LB02GEBIRY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55LB02GEBJRY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55LT02GEB2RY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55LT02GEB2RY | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Memory Interface: SPI - Quad I/O, QPI, DTR Memory Organization: 256M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55LT02GEBARY | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Memory Interface: SPI - Quad I/O, QPI, DTR Memory Organization: 256M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55LT02GEBARY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55LT02GEBIRY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55LT02GEBIRY | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Memory Interface: SPI - Quad I/O, QPI, DTR Memory Organization: 256M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55LT512WEFIRR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55LX01GEB2RY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/OCT Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Memory Interface: SPI - Octal I/O, DTR Memory Organization: 128M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55LX01GEB2RY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55LX01GEBARY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH Packaging: Tray Technology: FLASH - NOR Memory Format: FLASH | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55LX01GEBARY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55LX01GEBIRY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/OCT Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Memory Interface: SPI - Octal I/O, DTR Memory Organization: 128M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55LX01GEBIRY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55LX01GEF2RR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH Packaging: Tape & Reel (TR) Technology: FLASH - NOR Memory Format: FLASH | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55LX01GEF2RR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55LX01GEFIRR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/OCT Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Active Memory Interface: SPI - Octal I/O, DTR Memory Organization: 128M x 8 | auf Bestellung 983 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD55LX01GEFIRR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/OCT Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Active Memory Interface: SPI - Octal I/O, DTR Memory Organization: 128M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55LX01GEFIRR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55LX02GEBARY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55S | Fantech | Description: STEEL DEHUMIDIFIER, 101 PINTS Packaging: Box Color: Black Voltage: 115V Material: Steel Frequency: 60Hz Temperature Range: 40 ~ 95°F Weight: 50 lbs Height: 21" Approval Agency: cCSAus Part Status: Active Current Rating (Amps): 6.8 Depth: 18" Width (Inches): 13-1/2 Air Flow - High: 325 CFM Coverage Square Feet: 5500 | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD55T01GEYAGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH Packaging: Tape & Reel (TR) Technology: FLASH - NOR Memory Format: FLASH | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55T01GEYAGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55WB512MEYIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55X01GEF2RR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD55X02GEB2RY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD56V64164TC-5TP | GIGADEVLCE | 07+ TSOPII54 | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD56V64164TC-5TP | GIGADEVLCE | TSOPII54 07+ | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD56V64164TC-6TP | GIGADEVLCE | TSOPII54 07+ | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD56V64164TC-6TP | GIGADEVLCE | 07+ TSOPII54 | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD56V64164TC-7TP | GIGADEVLCE | TSOPII54 07+ | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD56V64164TC-7TP | GIGADEVLCE | 07+ TSOPII54 | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD57-21 | Laird Technologies IAS | Description: ANT GRID 21DBI 5.4-5.7GHZ N FEM | Produkt ist nicht verfügbar | |||||||||||||||||
| GD57-21 | Laird | Antennas Grid,Wire,Fixed,NF | Produkt ist nicht verfügbar | |||||||||||||||||
| GD57-25 | TE Connectivity Laird | Description: RF ANT 5.7GHZ GRID N FEM BRKT MT Packaging: Bulk Mounting Type: Bracket Mount Frequency Range: 5.47GHz ~ 5.725GHz Applications: WiMax™, WLAN Gain: 25dBi Termination: N Type Female Number of Bands: 1 VSWR: 1.5 Antenna Type: Parabolic Grid Height (Max): 24.000" (609.60mm) Frequency Group: SHF (f > 4GHz) Frequency (Center/Band): 5.7GHz RF Family/Standard: WiFi Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| GD57-25 | Laird | Antennas Grid,Wire,Fixed,NF | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| GD57-28 | Laird Technologies IAS | Description: ANT GRID 28DBI 5.4-5.7GHZ N FEM | Produkt ist nicht verfügbar | |||||||||||||||||
| GD57-28 | Laird | Antennas Grid,Wire,Fixed,NF | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| GD58-22 | Laird | Antennas Grid,Wire,Fixed,NF | Produkt ist nicht verfügbar | |||||||||||||||||
| GD58-22 | Laird Technologies IAS | Description: ANT GRID 22DBI 5.8GHZ N FEMALE | Produkt ist nicht verfügbar | |||||||||||||||||
| GD58-26 | Laird Technologies IAS | Description: ANT GRID 26DBI 5.8GHZ N FEMALE | Produkt ist nicht verfügbar | |||||||||||||||||
| GD58-26 | Laird | Antennas Grid,Wire,Fixed,NF | Produkt ist nicht verfügbar | |||||||||||||||||
| GD58-26-FEED | TE Connectivity | FEED,MED,Wire Grid, 5725-5850MHz,26dBi,NF | Produkt ist nicht verfügbar | |||||||||||||||||
| GD58-26-FEED | TE Connectivity / Laird External Antennas | Antennas FEED,MED,Wire Grid | Produkt ist nicht verfügbar | |||||||||||||||||
| GD58-29 | Laird Technologies IAS | Description: ANT GRID 29DBI 5.8GHZ N FEMALE | Produkt ist nicht verfügbar | |||||||||||||||||
| GD58-29 | Laird | Antennas Grid,Wire,Fixed,NF | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| GD58-29-FEED | Laird | Antennas FEED,LRG,Wire Grid | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GM7REWIGR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GM7REWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 9 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GM7REWIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 9 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GM7REWIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GM7REYIGR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GM7REYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 9 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GM7REYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 9 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GM7REYIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GM7UEWIGR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GM7UEWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 7 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GM7UEWIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GM7UEWIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 7 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GM7UEYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 7 ns Memory Organization: 128M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GM7UEYIGR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GM7UEYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 7 ns Memory Organization: 128M x 8 | auf Bestellung 2852 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD5F1GM7UEYIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GM7UEYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 7 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GM7UEYJGR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GM7UEYJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 7 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ4REFIGR | GigaDevice | NAND Flash | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| GD5F1GQ4RF9IGR | GigaDevice | NAND Flash 1Gbit SPI NAND Flash /1.8V /WSON 8*6 /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ4RF9IGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD I/O 8LGA Packaging: Tape & Reel (TR) Package / Case: 8-VLGA Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-LGA (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 128M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ4RF9IGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD I/O 8LGA Packaging: Tray Package / Case: 8-VLGA Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-LGA (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 128M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ4RF9IGY | GigaDevice | NAND Flash 1Gbit SPI NAND Flash /1.8V /WSON 8*6 /Industrial(-40? to +85?) /Tray | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ4UCYIGY | GigaDevice | NAND Flash USE GD5F1GQ4UFYIGR | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ4UEFIGR | GigaDevice | NAND Flash | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
| GD5F1GQ4UEYIGR | GigaDevice | NAND Flash 1Gbit SPI NAND Flash /3.3V /WSON 8*6 /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ4UEYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 128M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ4UEYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 128M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ4UEYIGY | GigaDevice | NAND Flash 1Gbit SPI NAND Flash /3.3V /WSON 8*6 /Industrial(-40? to +85?) /Tray | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ4UEYIHR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ4UEYIHY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ4UFYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 128M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ4UFYIGR | GigaDevice | NAND Flash 1Gbit SPI NAND Flash /3.3V /WSON 8*6 /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ4UFYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 128M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ4UFYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 128M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ4UFYIGY | GigaDevice | NAND Flash 1Gbit SPI NAND Flash /3.3V /WSON 8*6 /Industrial(-40? to +85?) /Tray | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5REWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 9.5 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5REWIGR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5REWIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 9.5 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5REWIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5REY2GR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5REY2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH Packaging: Tape & Reel (TR) Technology: FLASH - NAND Memory Format: FLASH | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5REY2GY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 9.5 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5REY2GY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5REYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 9.5 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5REYIGR | GigaDevice | NAND Flash | auf Bestellung 2449 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD5F1GQ5REYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 9.5 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5REYIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5REYIHR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 9.5 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5REYIHR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5REYIHY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5REYIHY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 9.5 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5REYJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 9.5 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5REYJGR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5UEBIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 7 ns Memory Organization: 128M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5UEBIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5UEBJGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 7 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5UEBJGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5UEWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 7 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5UEWIGR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5UEY2GR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5UEY2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH Packaging: Tape & Reel (TR) Technology: FLASH - NAND Memory Format: FLASH | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5UEY2GY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 7 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5UEY2GY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5UEYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 7 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5UEYIGR | GigaDevice | NAND Flash | auf Bestellung 2452 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD5F1GQ5UEYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 7 ns Memory Organization: 256M x 4 | auf Bestellung 2795 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD5F1GQ5UEYIGR | GigaDevice Semiconductor | GD5F1GQ5UEYIGR | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5UEYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 7 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5UEYIGY | GigaDevice | NAND Flash | auf Bestellung 4568 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD5F1GQ5UEYIHR | GigaDevice | NAND Flash | auf Bestellung 4646 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD5F1GQ5UEYIHR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 7 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5UEYIHY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5UEYIHY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 7 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5UEYJGR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F1GQ5UEYJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1GBIT SPI/QUAD Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 7 ns Memory Organization: 256M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GM7REWIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GM7REWIGY | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 9 ns Memory Organization: 512M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GM7REYIGY | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 9 ns Memory Organization: 512M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GM7REYIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GM7UEWIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GM7UEWIGY | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 7 ns Memory Organization: 256M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GM7UEYIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GM7UEYIGY | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 7 ns Memory Organization: 256M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ4RF9IGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2GBIT SPI/QUAD I/O 8LGA Packaging: Tape & Reel (TR) Package / Case: 8-VLGA Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-LGA (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 256M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ4RF9IGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2GBIT SPI/QUAD I/O 8LGA Packaging: Tray Package / Case: 8-VLGA Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-LGA (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 256M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ4UEYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2GBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 256M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ4UEYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2GBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 256M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ4UF9IGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2GBIT SPI/QUAD I/O 8LGA Packaging: Tape & Reel (TR) Package / Case: 8-VLGA Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-LGA (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 256M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ4UFYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2GBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 700µs Memory Interface: SPI - Quad I/O Memory Organization: 256M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5REY2GY | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 11 ns Memory Organization: 512M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5REY2GY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5REYIGR | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O Access Time: 11 ns Memory Organization: 256M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5REYIGR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5REYIGY | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O Access Time: 11 ns Memory Organization: 256M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5REYIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5REYIHR | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 11 ns Memory Organization: 512M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5REYIHR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5REYIHY | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 11 ns Memory Organization: 512M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5REYIHY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5REYJGR | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O Access Time: 11 ns Memory Organization: 256M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5REYJGR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5RFBIGY | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tray | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5RFBIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5RFYIGY | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tray | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5RFYIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5RFZIGY | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tray | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5RFZIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5UEBIGY | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O Access Time: 9 ns Memory Organization: 256M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5UEBIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5UEY2GY | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 9 ns Memory Organization: 256M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5UEY2GY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5UEYIGR | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O Access Time: 9 ns Memory Organization: 256M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5UEYIGR | GigaDevice | NAND Flash | auf Bestellung 3459 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD5F2GQ5UEYIGY | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O Access Time: 9 ns Memory Organization: 256M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5UEYIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5UEYIHR | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 9 ns Memory Organization: 512M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5UEYIHR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5UEYIHY | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 9 ns Memory Organization: 512M x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5UEYIHY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5UEYJGR | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O Access Time: 9 ns Memory Organization: 256M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5UEYJGR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5UEZIGY | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O Access Time: 9 ns Memory Organization: 256M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5UEZIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5UFYIGR | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F2GQ5UFYIGR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F4GM8REWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4GBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 9 ns Memory Organization: 1G x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F4GM8REWIGR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F4GM8REWIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4GBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NAND (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 9 ns Memory Organization: 1G x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F4GM8REWIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F4GM8REY2GY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F4GM8REYIGR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F4GM8REYIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F4GM8UEB2GY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F4GM8UEBIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F4GM8UEWIGR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F4GM8UEWIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F4GM8UEYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4GBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 7 ns Memory Organization: 1G x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F4GM8UEYIGR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F4GM8UEYIGY | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F4GM8UEYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4GBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 600µs Memory Interface: SPI - Quad I/O, DTR Access Time: 7 ns Memory Organization: 1G x 4 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F4GQ4RBYIGR | GigaDevice | NAND Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F4GQ4UCYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4GBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 512M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F4GQ6RFYIGR | GigaDevice Semiconductor (HK) Limited | Description: SPI NAND FLASH 4GB WSON8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F4GQ6RFYIGR | GigaDevice Semiconductor (HK) Limited | Description: SPI NAND FLASH 4GB WSON8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5F4GQ6RFYIGR | GigaDevice Semiconductor (HK) Limited | Description: SPI NAND FLASH 4GB WSON8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5V_20ATV2-0001 | Vicor | Modular Power Supplies GD50A50A | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5V_5A-5V_5A | Vicor | Modular Power Supplies GD5V5A5V5A PAC | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5W-21P-NF | Laird Connectivity | Antennas Grid,WireWB,195-30in ,NF | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD5W-21P-NF | Laird Technologies IAS | Description: ANT GRID 21DBI 4.9-5.8G 30"N FEM | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5W-25P-NF | Laird Connectivity | Antennas Grid,WireWB,195-30in ,NF | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5W-25P-NF | TE Connectivity | Grid,WireWB,195-30in,NF | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5W-25P-NF | TE Connectivity Laird | Description: RF ANT 5.4GHZ GRID N FEM BRK 30" Packaging: Bulk Mounting Type: Bracket Mount Frequency Range: 4.94GHz ~ 5.85GHz Applications: WiMax™, WLAN Gain: 25dBi Termination: N Type Female Number of Bands: 1 VSWR: 1.5 Antenna Type: Parabolic Grid Height (Max): 24.000" (609.60mm) Frequency Group: SHF (f > 4GHz) Frequency (Center/Band): 5.4GHz RF Family/Standard: WiFi Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5W-28P-NF | Laird Technologies IAS | Description: ANT GRID 28DBI 4.9-5.8G 30"N FEM | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5W-28P-NF | Laird Connectivity | Antennas Grid,WireWB,195-30in ,NF | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD5W-29FEED | TE Connectivity | FEED,WB,LRG,Wire Grid,4900-5850MHz,29dBi,NF | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5W-29FEED | TE Connectivity / Laird External Antennas | Antennas FEED,WB,LRG,Wire Gri d | Produkt ist nicht verfügbar | |||||||||||||||||
| GD5X125-B/B | Checkers Industrial Products | Description: 5 CH GUARD DOG, CABLE PROTECTOR Packaging: Box Color: Black Type: Cable Protector Part Status: Active Construction: Urethane Height (Inches): 1.875 Length (Inches): 36 Width (Inches): 19.75 | auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD5X125-O/B | Checkers Industrial Products | Description: CABLE PROTECTOR, CHECKERS GUARD Packaging: Box Color: Orange Lid/Black Base Type: Cable Protector Part Status: Active Construction: Urethane Height (Inches): 1.875 Length (Inches): 36 Width (Inches): 19.75 | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD5X75-ST-O/B | Checkers Industrial Products | Description: 5 CH GUARD DOG,LOW PROFILE Packaging: Box Color: Orange Lid/Black Base Type: Cable Protector Part Status: Active Construction: Urethane Height (Inches): 1.25 Length (Inches): 36 Width (Inches): 16.9 | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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