Produkte > AOU
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||
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AOU1N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 1.3A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc) Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||
AOU1N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 1.3A 3-Pin(3+Tab) TO-251 T/R | Produkt ist nicht verfügbar | |||||||||||
AOU2N60 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Case: TO251 Gate-source voltage: ±30V On-state resistance: 4.4Ω Mounting: THT Gate charge: 9.5nC Kind of channel: enhanced | auf Bestellung 3843 Stücke: Lieferzeit 14-21 Tag (e) |
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AOU2N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-251 | Produkt ist nicht verfügbar | |||||||||||
AOU2N60 | ALPHA&OMEGA | Transistor N-Channel MOSFET; 600V; 30V; 4,4Ohm; 2A; 56,8W; -50°C ~ 150°C; AOU2N60 TAOU2n60 Anzahl je Verpackung: 20 Stücke | auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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AOU2N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-251 | Produkt ist nicht verfügbar | |||||||||||
AOU2N60 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Case: TO251 Gate-source voltage: ±30V On-state resistance: 4.4Ω Mounting: THT Gate charge: 9.5nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 3843 Stücke: Lieferzeit 7-14 Tag (e) |
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AOU2N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 2A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||
AOU2N60 | ALPHA&OMEGA | Transistor N-Channel MOSFET; 600V; 30V; 4,4Ohm; 2A; 56,8W; -50°C ~ 150°C; AOU2N60 TAOU2n60 Anzahl je Verpackung: 20 Stücke | auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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AOU2N60A | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 2A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||
AOU2N60A | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-251 | Produkt ist nicht verfügbar | |||||||||||
AOU2N60_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 2A TO251-3 Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||
AOU3N50 | Alpha & Omega Semiconductor | auf Bestellung 1940 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||
AOU3N50 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 2.8A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 25 V | auf Bestellung 2059 Stücke: Lieferzeit 10-14 Tag (e) |
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AOU3N60 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.6A; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.6A Case: TO251 Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Gate charge: 9.9nC Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke | Produkt ist nicht verfügbar | |||||||||||
AOU3N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 2.5A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.25A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||
AOU3N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 2.5A 3-Pin(3+Tab) TO-251 | Produkt ist nicht verfügbar | |||||||||||
AOU3N60 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.6A; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.6A Case: TO251 Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Gate charge: 9.9nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||
AOU3N60_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 2.5A TO251-3 | Produkt ist nicht verfügbar | |||||||||||
AOU400 | AO | auf Bestellung 2309 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||
AOU404 | auf Bestellung 1350 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||
AOU405 | auf Bestellung 1645 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||
AOU414 | AO | 04+ | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||
AOU436 | auf Bestellung 7340 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||
AOU438 | auf Bestellung 3640 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||
AOU448 | auf Bestellung 3415 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||
AOU452 | auf Bestellung 1610 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||
AOU472 | auf Bestellung 3500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||
AOU4N60 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.6A Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Gate charge: 12nC Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke | Produkt ist nicht verfügbar | |||||||||||
AOU4N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-251 T/R | Produkt ist nicht verfügbar | |||||||||||
AOU4N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V | auf Bestellung 3972 Stücke: Lieferzeit 10-14 Tag (e) |
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AOU4N60 | ALPHA & OMEGA SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.6A Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.3Ω Mounting: THT Gate charge: 12nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||
AOU4N60 Produktcode: 161901 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||
AOU4S60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 263 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||
AOU7S60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 7A TO251-3 | Produkt ist nicht verfügbar | |||||||||||
AOU7S60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-251A T/R | Produkt ist nicht verfügbar | |||||||||||
AOU7S65 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 7A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||
AOU7S65 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-251 Tube | Produkt ist nicht verfügbar | |||||||||||
AOUS66414 | Alpha & Omega Semiconductor Inc. | Description: 40V N-CHANNEL ALPHASGT T | auf Bestellung 2989 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||
AOUS66414 | Alpha & Omega Semiconductor Inc. | Description: 40V N-CHANNEL ALPHASGT T | Produkt ist nicht verfügbar | |||||||||||
AOUS66416 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 40V 33A/69A ULTRASO8 Packaging: Tape & Reel (TR) Package / Case: 3-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 69A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 73.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: UltraSO-8™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2575 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||
AOUS66416 | Alpha & Omega Semiconductor | Trench Power MOSFET | Produkt ist nicht verfügbar | |||||||||||
AOUS66416 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 40V 33A/69A ULTRASO8 Packaging: Cut Tape (CT) Package / Case: 3-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 69A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 73.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: UltraSO-8™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2575 pF @ 20 V | auf Bestellung 938 Stücke: Lieferzeit 10-14 Tag (e) |
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AOUS66416 | Alpha & Omega Semiconductor | Trench Power MOSFET | Produkt ist nicht verfügbar | |||||||||||
AOUS66616 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 33A/92A ULTRASO8 | Produkt ist nicht verfügbar | |||||||||||
AOUS66616 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 92A 3-Pin Ultra SO T/R | Produkt ist nicht verfügbar | |||||||||||
AOUS66616 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 33A/92A ULTRASO8 | Produkt ist nicht verfügbar | |||||||||||
AOUS66620 | Alpha & Omega Semiconductor | N Channel Trench Power MOSFET | Produkt ist nicht verfügbar | |||||||||||
AOUS66920 | Alpha & Omega Semiconductor | 100V N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||
AOUS66923 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 16.5A ULTRASO-8 Packaging: Tape & Reel (TR) Package / Case: 3-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: UltraSO-8™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||
AOUS66923 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 16.5A ULTRASO-8 Packaging: Cut Tape (CT) Package / Case: 3-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: UltraSO-8™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V | Produkt ist nicht verfügbar |