Produkte > AOS
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AOS 113 X 165 X 0,635 | Fischer Elektronik | AOS 113 X 165 X 0,635 | Produkt ist nicht verfügbar | |||||||||||||
| AOS 127 | Fischer Elektronik | Aluminum Oxide Wafers With Dielectric Constant 9 | Produkt ist nicht verfügbar | |||||||||||||
| AOS 18 | Fischer Elektronik | Aluminium Oxide Wafer | Produkt ist nicht verfügbar | |||||||||||||
| AOS 218 247 | Fischer Elektronik | Thermally Conductive Gap Thermal Pads | auf Bestellung 612 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 218 247 | RICHONE | dimensions: 25x21x3.0mm; with hole ?4mm; 0.3K/W; 25W/m*K; Fischer: AOS 218 247; AOS218/247; Aluminium oxide wafers for TO218/TO247 (3.0mm) TPTO218/247cer Anzahl je Verpackung: 10 Stücke | auf Bestellung 450 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOS 218 247 | Fischer Elektronik | Thermally Conductive Gap Thermal Pads | auf Bestellung 610 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 218 247 | FISCHER ELEKTRONIK | Category: Heatsinks - equipment Description: Heat transfer pad: ceramic; TO218,TO247; L: 21mm; W: 25mm; Thk: 3mm Type of heat transfer pad: ceramic Application: TO218; TO247 Length: 21mm Width: 25mm Thickness: 3mm Thermal conductivity: 25W/mK Electrical insulation: 10kV/mm Mounting hole diameter: 4mm Pad volume resistance: 100TΩ/cm Anzahl je Verpackung: 1 Stücke | auf Bestellung 5917 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOS 218 247 | Fischer Elektronik | Thrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide | auf Bestellung 1162 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||
| AOS 218 247 | Fischer Elektronik | Thermally Conductive Gap Thermal Pads | auf Bestellung 8920 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 218 247 | FISCHER ELEKTRONIK | Category: Heatsinks - equipment Description: Heat transfer pad: ceramic; TO218,TO247; L: 21mm; W: 25mm; Thk: 3mm Type of heat transfer pad: ceramic Application: TO218; TO247 Length: 21mm Width: 25mm Thickness: 3mm Thermal conductivity: 25W/mK Electrical insulation: 10kV/mm Mounting hole diameter: 4mm Pad volume resistance: 100TΩ/cm | auf Bestellung 5917 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 218 247 1 | Fischer Elektronik | Aluminium Oxide Wafer | Produkt ist nicht verfügbar | |||||||||||||
| AOS 218 247 1 | FISCHER ELEKTRONIK | Category: Heatsinks - equipment Description: Heat transfer pad: ceramic; TO218,TO247; L: 21mm; W: 25mm; 25W/mK Type of heat transfer pad: ceramic Application: TO218; TO247 Length: 21mm Width: 25mm Thickness: 1.5mm Thermal conductivity: 25W/mK Electrical insulation: 10kV/mm Mounting hole diameter: 4mm Pad volume resistance: 100TΩ/cm | auf Bestellung 3081 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 218 247 1 | Fischer Elektronik | Thrml Mgmt Access Aluminium Oxide Wafer 0.3K/W 25W/m·K Aluminum | auf Bestellung 3184 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 218 247 1 | FISCHER ELEKTRONIK | Category: Heatsinks - equipment Description: Heat transfer pad: ceramic; TO218,TO247; L: 21mm; W: 25mm; 25W/mK Type of heat transfer pad: ceramic Application: TO218; TO247 Length: 21mm Width: 25mm Thickness: 1.5mm Thermal conductivity: 25W/mK Electrical insulation: 10kV/mm Mounting hole diameter: 4mm Pad volume resistance: 100TΩ/cm Anzahl je Verpackung: 1 Stücke | auf Bestellung 3081 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOS 220 | Fischer | Thickness: 1,5mm; Dimensions: 18x12mm Fischer : AOS 220 Aluminium oxide wafers for TO220 18x12mm TPTO220cer Anzahl je Verpackung: 50 Stücke | auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOS 220 | FISCHER ELEKTRONIK | Category: Heatsinks - equipment Description: Heat transfer pad: ceramic; TO220; L: 12mm; W: 18mm; Thk: 1.5mm Type of heat transfer pad: ceramic Application: TO220 Length: 12mm Width: 18mm Thickness: 1.5mm Thermal conductivity: 25W/mK Electrical insulation: 10kV/mm Mounting hole diameter: 3.1mm Pad volume resistance: 100TΩ/cm | auf Bestellung 3464 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 220 | Fischer Elektronik | Thermally Conductive Gap Thermal Pads | auf Bestellung 3672 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 220 | FISCHER ELEKTRONIK | Category: Heatsinks - equipment Description: Heat transfer pad: ceramic; TO220; L: 12mm; W: 18mm; Thk: 1.5mm Type of heat transfer pad: ceramic Application: TO220 Length: 12mm Width: 18mm Thickness: 1.5mm Thermal conductivity: 25W/mK Electrical insulation: 10kV/mm Mounting hole diameter: 3.1mm Pad volume resistance: 100TΩ/cm Anzahl je Verpackung: 1 Stücke | auf Bestellung 3464 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOS 220 | Fischer Elektronik | Thermally Conductive Gap Thermal Pads | auf Bestellung 39214 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 220 | CHINA | Thickness: 1,5mm; Dimensions: 18x12mm Fischer : AOS 220 Aluminium oxide wafers for TO220 18x12mm TPTO220cer Anzahl je Verpackung: 50 Stücke | auf Bestellung 98 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOS 220 | Fischer Elektronik | Thermally Conductive Gap Thermal Pads | auf Bestellung 39208 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 220 | Fischer | Thickness: 1,5mm; Dimensions: 18x12mm Fischer : AOS 220 Aluminium oxide wafers for TO220 18x12mm TPTO220cer Anzahl je Verpackung: 50 Stücke | auf Bestellung 16 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOS 220 | Fischer Elektronik | Thrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide | auf Bestellung 41687 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||
| AOS 220 3 | Fischer Elektronik | Aluminum Oxide Wafers | auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||
| AOS 220 3 | Fischer Elektronik | Aluminum Oxide Wafers | auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||
| AOS 220 3 | Fischer Elektronik | Aluminum Oxide Wafers | auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 220 4 | Fischer Elektronik | Thrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide | Produkt ist nicht verfügbar | |||||||||||||
| AOS 220 4 | Fischer Elektronik | Thermally Conductive Gap Thermal Pads | auf Bestellung 7999 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 220 4 | Fischer Elektronik | Thermally Conductive Gap Thermal Pads | auf Bestellung 9332 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 220 4 | FISCHER ELEKTRONIK | Category: Heatsinks - equipment Description: Heat transfer pad: ceramic; TO220; L: 12mm; W: 18mm; Thk: 1.5mm Type of heat transfer pad: ceramic Application: TO220 Length: 12mm Width: 18mm Thickness: 1.5mm Thermal conductivity: 25W/mK Electrical insulation: 10kV/mm Mounting hole diameter: 4mm Pad volume resistance: 100TΩ/cm Anzahl je Verpackung: 1 Stücke | auf Bestellung 7999 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOS 220 4 | FISCHER ELEKTRONIK | Category: Heatsinks - equipment Description: Heat transfer pad: ceramic; TO220; L: 12mm; W: 18mm; Thk: 1.5mm Type of heat transfer pad: ceramic Application: TO220 Length: 12mm Width: 18mm Thickness: 1.5mm Thermal conductivity: 25W/mK Electrical insulation: 10kV/mm Mounting hole diameter: 4mm Pad volume resistance: 100TΩ/cm | auf Bestellung 7999 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 220 4 | Fischer Elektronik | Thermally Conductive Gap Thermal Pads | auf Bestellung 9328 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 220 SL | Fischer Elektronik | Thrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide | Produkt ist nicht verfügbar | |||||||||||||
| AOS 220-3 | Fischer | Thickness: 1,6mm; Dimensions: 19,2x13,9 (hole 3,7mm); 25W/m*K; Fischer : AOS 220 3; Aluminium oxide wafers for TO220 19x13mm TPTO220cer-3 | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) | |||||||||||||
| AOS 247 | Fischer | dimensions: 23x20x1,0mm, without a hole; 0,3 K/W; 25 W/m*K; Fischer: AOS 247; AOS247; Aluminium oxide wafers for TO247 (without a hole) TPTO247cer pelna Anzahl je Verpackung: 10 Stücke | auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOS 247 | FISCHER ELEKTRONIK | Category: Heatsinks - equipment Description: Heat transfer pad: ceramic; TO247; L: 20mm; W: 23mm; Thk: 1mm; 25W/mK Type of heat transfer pad: ceramic Application: TO247 Length: 20mm Width: 23mm Thickness: 1mm Thermal conductivity: 25W/mK Electrical insulation: 10kV/mm Pad volume resistance: 100TΩ/cm | auf Bestellung 1637 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 247 | Fischer Elektronik | Thrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide | Produkt ist nicht verfügbar | |||||||||||||
| AOS 247 | Fischer | dimensions: 23x20x1,0mm, without a hole; 0,3 K/W; 25 W/m*K; Fischer: AOS 247; AOS247; Aluminium oxide wafers for TO247 (without a hole) TPTO247cer pelna Anzahl je Verpackung: 10 Stücke | auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOS 247 | FISCHER ELEKTRONIK | Category: Heatsinks - equipment Description: Heat transfer pad: ceramic; TO247; L: 20mm; W: 23mm; Thk: 1mm; 25W/mK Type of heat transfer pad: ceramic Application: TO247 Length: 20mm Width: 23mm Thickness: 1mm Thermal conductivity: 25W/mK Electrical insulation: 10kV/mm Pad volume resistance: 100TΩ/cm Anzahl je Verpackung: 1 Stücke | auf Bestellung 1637 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOS 247 | Fischer Elektronik | Thermally Conductive Gap Thermal Pads | auf Bestellung 3118 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 3 | Fischer | dimensions: 40,6x26,3x2,9mm; with holes 2=?4.8mm and 2=?4.8x4.2mm; 0,3K/W; 25W/m*K; Fischer: AOS 3; Aluminium oxide wafers for TO3 40,6x26,3mm TPTO3cer Anzahl je Verpackung: 4 Stücke | auf Bestellung 46 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOS 3 | FISCHER ELEKTRONIK | Category: Heatsinks - equipment Description: Heat transfer pad: ceramic; TO3; L: 26.3mm; W: 40mm; Thk: 2.9mm Type of heat transfer pad: ceramic Application: TO3 Length: 26.3mm Width: 40mm Thickness: 2.9mm Thermal conductivity: 25W/mK Electrical insulation: 10kV/mm Mounting hole diameter: 4.2mm Pad volume resistance: 100TΩ/cm Anzahl je Verpackung: 1 Stücke | auf Bestellung 113 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOS 3 | FISCHER ELEKTRONIK | Category: Heatsinks - equipment Description: Heat transfer pad: ceramic; TO3; L: 26.3mm; W: 40mm; Thk: 2.9mm Type of heat transfer pad: ceramic Application: TO3 Length: 26.3mm Width: 40mm Thickness: 2.9mm Thermal conductivity: 25W/mK Electrical insulation: 10kV/mm Mounting hole diameter: 4.2mm Pad volume resistance: 100TΩ/cm | auf Bestellung 113 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 3 | Fischer Elektronik | Aluminium Oxide Wafer | Produkt ist nicht verfügbar | |||||||||||||
| AOS 3 P | FISCHER ELEKTRONIK | Category: Heatsinks - equipment Description: Heat transfer pad: ceramic; TO3P; L: 17.5mm; W: 20.5mm; Thk: 1.5mm Type of heat transfer pad: ceramic Application: TO3P Length: 17.5mm Width: 20.5mm Thickness: 1.5mm Thermal conductivity: 25W/mK Electrical insulation: 10kV/mm Mounting hole diameter: 3.1mm Pad volume resistance: 100TΩ/cm | auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 3 P | Fischer Elektronik | Thrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide | auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||
| AOS 3 P | FISCHER ELEKTRONIK | Category: Heatsinks - equipment Description: Heat transfer pad: ceramic; TO3P; L: 17.5mm; W: 20.5mm; Thk: 1.5mm Type of heat transfer pad: ceramic Application: TO3P Length: 17.5mm Width: 20.5mm Thickness: 1.5mm Thermal conductivity: 25W/mK Electrical insulation: 10kV/mm Mounting hole diameter: 3.1mm Pad volume resistance: 100TΩ/cm Anzahl je Verpackung: 1 Stücke | auf Bestellung 148 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOS 3 P 2 | FISCHER ELEKTRONIK | Category: Heatsinks - equipment Description: Heat transfer pad: ceramic; TO3P; L: 20mm; W: 23mm; Thk: 1mm; 25W/mK Type of heat transfer pad: ceramic Application: TO3P Length: 20mm Width: 23mm Thickness: 1mm Thermal conductivity: 25W/mK Electrical insulation: 10kV/mm Mounting hole diameter: 3.6mm Pad volume resistance: 100TΩ/cm | auf Bestellung 541 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 3 P 2 | Fischer Elektronik | Aluminium Oxide Wafers With Thickness 1.5mm | Produkt ist nicht verfügbar | |||||||||||||
| AOS 3 P 2 | FISCHER ELEKTRONIK | Category: Heatsinks - equipment Description: Heat transfer pad: ceramic; TO3P; L: 20mm; W: 23mm; Thk: 1mm; 25W/mK Type of heat transfer pad: ceramic Application: TO3P Length: 20mm Width: 23mm Thickness: 1mm Thermal conductivity: 25W/mK Electrical insulation: 10kV/mm Mounting hole diameter: 3.6mm Pad volume resistance: 100TΩ/cm Anzahl je Verpackung: 1 Stücke | auf Bestellung 541 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOS 3 P 2 | Fischer Elektronik | Aluminium Oxide Wafers With Thickness 1.5mm | auf Bestellung 1608 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 3 P SL | Fischer Elektronik | Thermally Conductive Gap Thermal Pads | auf Bestellung 2238 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 3 P SL | Fischer Elektronik | Thermally Conductive Gap Thermal Pads | auf Bestellung 2728 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 3 P SL | Fischer | dimensions: 20,5x17,5x1,5mm, with hole ?3,1mm; 0,3 K/W; 25W/m*K; Fischer: AOS 3 P SL; Aluminium oxide wafers for TOP3 20x17mm TPTO3pcer SL Anzahl je Verpackung: 10 Stücke | auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOS 3 P SL | FISCHER ELEKTRONIK | Category: Heatsinks - equipment Description: Heat transfer pad: ceramic; TO3P; L: 17.5mm; W: 20.5mm; Thk: 1.5mm Type of heat transfer pad: ceramic Application: TO3P Length: 17.5mm Width: 20.5mm Thickness: 1.5mm Thermal conductivity: 25W/mK Electrical insulation: 10kV/mm Mounting hole diameter: 3.1mm Pad volume resistance: 100TΩ/cm | auf Bestellung 1411 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 3 P SL | Fischer Elektronik | Thrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide | auf Bestellung 2728 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||
| AOS 3 P SL | Fischer Elektronik | Thermally Conductive Gap Thermal Pads | auf Bestellung 2728 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS 3 P SL | FISCHER ELEKTRONIK | Category: Heatsinks - equipment Description: Heat transfer pad: ceramic; TO3P; L: 17.5mm; W: 20.5mm; Thk: 1.5mm Type of heat transfer pad: ceramic Application: TO3P Length: 17.5mm Width: 20.5mm Thickness: 1.5mm Thermal conductivity: 25W/mK Electrical insulation: 10kV/mm Mounting hole diameter: 3.1mm Pad volume resistance: 100TΩ/cm Anzahl je Verpackung: 1 Stücke | auf Bestellung 1411 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOS 32 | FISCHER ELEKTRONIK | Category: Heatsinks - equipment Description: Heat transfer pad: ceramic; TO126,TO32; L: 8mm; W: 11mm; Thk: 1.5mm Type of heat transfer pad: ceramic Application: TO32; TO126 Length: 8mm Width: 11mm Thickness: 1.5mm Thermal conductivity: 25W/mK Electrical insulation: 10kV/mm Mounting hole diameter: 3.1mm Pad volume resistance: 100TΩ/cm Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||
| AOS 32 | FISCHER ELEKTRONIK | Category: Heatsinks - equipment Description: Heat transfer pad: ceramic; TO126,TO32; L: 8mm; W: 11mm; Thk: 1.5mm Type of heat transfer pad: ceramic Application: TO32; TO126 Length: 8mm Width: 11mm Thickness: 1.5mm Thermal conductivity: 25W/mK Electrical insulation: 10kV/mm Mounting hole diameter: 3.1mm Pad volume resistance: 100TΩ/cm | Produkt ist nicht verfügbar | |||||||||||||
| AOS 32 | Fischer Elektronik | Aluminium Oxide Wafer | Produkt ist nicht verfügbar | |||||||||||||
| AOS 32 : ASO32 | FISCHER ELEKTRONIK GmbH und Co. KG | AOS32 Теплопроводящая прокладка керамическая, TO126, L=11мм, W=8мм, монт. отверствие 3,1мм | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||
| AOS 3P2 | Fischer | dimensions: 23x20x1mm; with hole ?3,6mm; 0,3K/W; 25W/m*K; Fischer: AOS 3 P 2; Aluminium oxide wafers for TOP3 23x20mm TPTO3pcer-2 Anzahl je Verpackung: 4 Stücke | auf Bestellung 56 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOS 5 | Fischer Elektronik | Aluminium Oxide Wafers With Thickness 1.5mm | Produkt ist nicht verfügbar | |||||||||||||
| AOS 66 | Fischer Elektronik | Aluminium Oxide Wafers With Thickness 1.5 Mm | Produkt ist nicht verfügbar | |||||||||||||
| AOS 93 | Fischer Elektronik | Aluminium Oxide Wafers With Thickness 1.5mm | Produkt ist nicht verfügbar | |||||||||||||
| AOS SL (53X24X1,5MM) W001119 | Fischer Elektronik | ALUMINIUM OXIDE WAFER | Produkt ist nicht verfügbar | |||||||||||||
| AOS SL (53X24X1MM) W001119 | Fischer Elektronik | ALUMINIUM OXIDE WAFER | Produkt ist nicht verfügbar | |||||||||||||
| AOS SL (72,1X24X1,5MM) W001121 | Fischer Elektronik | ALUMINIUM OXIDE WAFER | Produkt ist nicht verfügbar | |||||||||||||
| AOS SL (72,1X24X1MM) W001121 | Fischer Elektronik | ALUMINIUM OXIDE WAFER | Produkt ist nicht verfügbar | |||||||||||||
| AOS SPECIAL 33X29X1.27 | Fischer Elektronik | Aluminium Oxide Wafer | Produkt ist nicht verfügbar | |||||||||||||
| AOS-SPECIAL | Fischer Elektronik | AOS-SPECIAL | Produkt ist nicht verfügbar | |||||||||||||
| AOS-SPECIAL W006836 | Fischer Elektronik | 44 X 48 X 1,5 mm. 3 holes 4,7 mm. 1 hole 3,8 mm. | Produkt ist nicht verfügbar | |||||||||||||
| AOS218/247 Dichtung keramische 3mm 25x21 TO218/247 Produktcode: 29478 | Fisher | Isoliermaterialien Gruppe: Dichtungen, Schichtunterlage, Isolierhulse Beschreibung: Dichtung thermisch leitende keramische, 3mm 25x21mm, für ТО-218, ТО-247, 25W/mК, 10kV/mm Größe: 21х25х3mm + Loch.4,0mm, fuer Gehause TO-218, TO-247 Матеріал: Кераміка білий | auf Bestellung 375 Stück: Lieferzeit 21-28 Tag (e) |
| ||||||||||||
| AOS218/247/1 Dichtung keramische 1,5mm 25x21 Produktcode: 53560 | Fisher | Isoliermaterialien Gruppe: Dichtungen, Schichtunterlage, Isolierhulse Beschreibung: Dichtung thermisch leitende keramische für ТО-218, ТО-247; 1,5mm, 25x21mm, 25W/mК, 10kV/mm Größe: 1,5mm, 25x21mm, fuer Gehause ТО-218, ТО-247 Матеріал: Кераміка білий | Produkt ist nicht verfügbar |
| ||||||||||||
| AOS218/247 Прокладка керамическая 1мм 25x20 TO218/247 Produktcode: 131173 | Fisher | Isoliermaterialien Gruppe: Прокладка теплопровідна Beschreibung: Прокладка теплопровідна керамічна для ТО-218, ТО-247; 1мм, 25х21мм, 25Вт/мК, 10кВ/мм Größe: 1мм, 25х21мм, під корпус ТО-218, ТО-247 Матеріал: Кераміка білий | Produkt ist nicht verfügbar | |||||||||||||
| AOS218/247; (25х21х3,0мм); оксид алюминия; для TO218/TO247; 10kV/mm; Теплопров.:25Вт/м*К; FISCHER | auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| AOS220 | Fischer Electronik | Прокладка керамічна до ТО220; Розм = 12 x 18 x 1,5 мм; Теплопров. = 25 Вт/мК; Ел. ізол. = 10 кВ/мм; 12x18x1.5mm | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS220 keramische Dichtung TO220; L:12mm; W:18mm; D:1.5mm Produktcode: 42354 | Fisher | Isoliermaterialien Gruppe: Dichtungen, Schichtunterlage, Isolierhulse Beschreibung: Dichtung thermisch leitende keramische für ТО-220, L:12mm; W:18mm; D:1.5mm, 25W/mК, 10kV/mm Größe: 12х18х1,5mm + Loch.3,1mm, fuer Gehause TO-220 Матеріал: Кераміка білий | auf Bestellung 182 Stück: Lieferzeit 21-28 Tag (e) |
| ||||||||||||
| AOS220 Керамическая прокладка TO220; L:19,2mm; W:13,9mm; Produktcode: 165257 | Fisher | Isoliermaterialien Gruppe: Прокладка теплопровідна Beschreibung: Прокладка теплопровідна керамічна для ТО-220, L:19,2mm; W:13,9mm; 25Вт/мК, електрична ізоляція 10кВ/мм Größe: 19,2х13,9х1мм + отв.3,7мм, під корпус TO-220 Матеріал: Кераміка білий | Produkt ist nicht verfügbar | |||||||||||||
| AOS220 Керамічна прокладка TO220; L:19,2mm; W:13,9mm, H:2mm Produktcode: 204993 | Isoliermaterialien Gruppe: Прокладка теплопровідна Beschreibung: Прокладка теплопровідна керамічна для ТО-220, L:19,2mm; W:13,9mm; 25Вт/мК, електрична ізоляція 10кВ/мм Größe: 19,2х13,9х2мм + отв.3,2мм, під корпус TO-220 Матеріал: Кераміка білий | auf Bestellung 50 Stück: Lieferzeit 21-28 Tag (e) | ||||||||||||||
| AOS220-4 | Fischer | Thickness: 1,5mm; Dimensions: 18x12mm (hole 4mm); Fischer AOS 220 4; AOS220/4; Aluminium oxide wafers for TO220 TPTO220cer-4 | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) | |||||||||||||
| AOS220/4 Прокладка теплопроводящая: керамическая: TO220: L:12мм: W:18мм. Диаметр монтажного отверстия 4 мм Produktcode: 112401 | Isoliermaterialien | Produkt ist nicht verfügbar | ||||||||||||||
| AOS220/4; (18х12х1.5 мм); оксид алюминия; ТО-220; 10kV/mm; Теплопров.:25Вт/м*К; FISCHER | auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| AOS220SL | Fischer | Thickness: 4,5mm; Dimensions: 18x14mm (hole 3,5mm); Fischer : AOS 220 SL; Aluminium oxide wafers for TO220 18x14mm TPTO220cer SL Anzahl je Verpackung: 5 Stücke | auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOS220SL | Fischer Elektronik | Thrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS220SL | Fischer Elektronik | Thrml Mgmt Access Thermal Pad 0.3K/W 25W/m.K Aluminum Oxide | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS247 Dichtung keramische TO-247 Produktcode: 35986 | Fisher | Isoliermaterialien Gruppe: Dichtungen, Schichtunterlage, Isolierhulse Beschreibung: Dichtung thermisch leitende keramische für ТО-247, 25W/mК, 10kV/mm Größe: 20х23х1mm, fuer Gehause TO-247 Матеріал: Кераміка білий | auf Bestellung 37 Stück: Lieferzeit 21-28 Tag (e) |
| ||||||||||||
| AOS296A001 | Alpha & Omega Semiconductor | AOD296A_001 | Produkt ist nicht verfügbar | |||||||||||||
| AOS32 | Fischer | Dimensions: 11x8x1.5mm; with a hole ?3.1mm; 0.3K/W; 25W/m*K; Fischer: AOS 32; Aluminium oxide wafers for SOT32 TPSOT32cer Anzahl je Verpackung: 10 Stücke | auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOS32 Dichtung keramische Produktcode: 75513 | Isoliermaterialien | Produkt ist nicht verfügbar | ||||||||||||||
| AOS322N-B | IDEC | Industrial Panel Mount Indicators / Switch Indicators TWS | Produkt ist nicht verfügbar | |||||||||||||
| AOS322N-B | IDEC | Description: TWS Packaging: Bulk | Produkt ist nicht verfügbar | |||||||||||||
| AOS322N-R | IDEC | Industrial Panel Mount Indicators / Switch Indicators (TWS) | Produkt ist nicht verfügbar | |||||||||||||
| AOS322N-R | IDEC | Description: (TWS) Packaging: Bulk | Produkt ist nicht verfügbar | |||||||||||||
| AOS3P | Fischer Elektronik | Thermally Conductive Gap Thermal Pads | auf Bestellung 306 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS3P | Fischer Elektronik | Thermally Conductive Gap Thermal Pads | auf Bestellung 294 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS3P | Fischer | dimensions: 20,5x17,5x1,5mm; with hole ?3,1mm (cut corners); 0,3K/W; 25W/m*K; Fischer : AOS 3 P; Aluminium oxide wafers for TO3P 20,5x17,5mm TPTO3pcer Anzahl je Verpackung: 5 Stücke | auf Bestellung 61 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOS3P | Fischer Elektronik | Thermally Conductive Gap Thermal Pads | auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOS3P Dichtung keramische fur TO3P; L:17.5mm; W:20.5mm Produktcode: 41939 | Fisher | Isoliermaterialien Gruppe: Dichtungen, Schichtunterlage, Isolierhulse Beschreibung: Dichtung thermisch leitende keramische für ТО-3Р, L:17.5mm; W:20.5mm, 25W/mК, 10kV/mm Größe: 17,5х20,5х1,5mm + Loch.3,1mm, fuer Gehause TO-3P Матеріал: Кераміка білий | Produkt ist nicht verfügbar |
| ||||||||||||
| AOS3P2 прокладка керамическая для TO3P; L:20mm; W:23mm; D:1mm Produktcode: 112773 | Gehäuse, Halter, Montage- und Installationselemente > Zubehör für Gehäuse | Produkt ist nicht verfügbar | ||||||||||||||
| AOSB113552 | 07+ | auf Bestellung 2700 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||
| AOSD21307 | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2P-CH 30V 9A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSD21307 | Alpha & Omega Semiconductor | 30V Dual P-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||
| AOSD21307 | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2P-CH 30V 9A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1995pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC | auf Bestellung 8323 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSD21311C | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 5A 8-Pin SOIC T/R | Produkt ist nicht verfügbar | |||||||||||||
| AOSD21311C | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2P-CH 30V 5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active | auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSD21311C | ALPHA & OMEGA SEMICONDUCTOR | AOSD21311C SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||
| AOSD21311C | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2P-CH 30V 5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 15V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active | auf Bestellung 52965 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSD21313C | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2P-CH 30V 5.7A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Rds On (Max) @ Id, Vgs: 32mOhm @ 5.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active | auf Bestellung 7925 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSD21313C | ALPHA & OMEGA SEMICONDUCTOR | AOSD21313C SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||
| AOSD21313C | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2P-CH 30V 5.7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Rds On (Max) @ Id, Vgs: 32mOhm @ 5.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSD26313C | Alpha & Omega Semiconductor | 30V Complementary MOSFET | Produkt ist nicht verfügbar | |||||||||||||
| AOSD26313C | Alpha & Omega Semiconductor Inc. | Description: MOSFET N/P-CH 30V 7A/5.7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 5.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 33nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA Supplier Device Package: 8-SOIC | Produkt ist nicht verfügbar | |||||||||||||
| AOSD26313C | ALPHA & OMEGA SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: -30/30V Drain current: 5.4/-4.4A Power dissipation: 1.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 26/55mΩ Mounting: SMD Gate charge: 33nC Kind of channel: enhanced Version: ESD | Produkt ist nicht verfügbar | |||||||||||||
| AOSD26313C | ALPHA & OMEGA SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; -30/30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: -30/30V Drain current: 5.4/-4.4A Power dissipation: 1.1W Case: SO8 Gate-source voltage: ±20V On-state resistance: 26/55mΩ Mounting: SMD Gate charge: 33nC Kind of channel: enhanced Version: ESD Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||
| AOSD32334C | Alpha & Omega Semiconductor | 30V Dual N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||
| AOSD32334C | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 30V 7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active | auf Bestellung 123000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSD32334C | ALPHA & OMEGA SEMICONDUCTOR | AOSD32334C Multi channel transistors | Produkt ist nicht verfügbar | |||||||||||||
| AOSD32334C | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 30V 7A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active | auf Bestellung 124594 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSD32338C | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC | Produkt ist nicht verfügbar | |||||||||||||
| AOSD62666E | ALPHA & OMEGA SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.5A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 6.5nC Kind of channel: enhanced Version: ESD Anzahl je Verpackung: 1 Stücke | auf Bestellung 466 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOSD62666E | ALPHA & OMEGA SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 7.5A; 1.6W; SO8; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 7.5A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 6.5nC Kind of channel: enhanced Version: ESD | auf Bestellung 466 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOSD62666E | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 60V 9.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active | auf Bestellung 16173 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSD62666E | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R | Produkt ist nicht verfügbar | |||||||||||||
| AOSD62666E | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 9.5A 8-Pin SOIC T/R | Produkt ist nicht verfügbar | |||||||||||||
| AOSD62666E | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2N-CH 60V 9.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 30V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSGL.SET.1 | SRA Soldering Products | Description: HOT AIR REWORK SINGLE NOZZLE SET Packaging: Box Diameter: Assorted Length: Assorted Width: Assorted Height: Assorted Tip Shape: Nozzle Tip Type: Rework (Hot Air) Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSGL.SET.2 | SRA Soldering Products | Description: HOT AIR REWORK SINGLE NOZZLE SET Packaging: Box Length: Assorted Width: Assorted Height: Assorted Tip Shape: Nozzle Tip Type: Rework (Hot Air) Part Status: Active Tip Chip Size: Single | auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSGL.SET.3 | SRA Soldering Products | Description: HOT AIR REWORK SINGLE NOZZLE SET | Produkt ist nicht verfügbar | |||||||||||||
| AOSN21319C | Alpha & Omega Semiconductor | P-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||
| AOSN21319C | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 30V 2.6A SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.6A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SC-70-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V | auf Bestellung 15414 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSN21319C | ALPHA & OMEGA SEMICONDUCTOR | AOSN21319C SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||
| AOSN21319C | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 30V 2.6A SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.6A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SC-70-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSN32338C | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 3.7A SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 51mOhm @ 3.7A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||
| AOSN32338C | ALPHA & OMEGA SEMICONDUCTOR | AOSN32338C SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||
| AOSOP.SET | SRA Soldering Products | Description: SOP NOZZLE SET FOR HOT AIR REWOR Packaging: Box Length: Assorted Width: Assorted Height: Assorted Tip Shape: Nozzle Tip Type: Rework (Hot Air) Tip Chip Size: SOP | Produkt ist nicht verfügbar | |||||||||||||
| AOSP1800 | SRA Soldering Products | Description: MINI SOLDER POT SP1800, 120 WATT Features: Ceramic Heater Packaging: Box Voltage - Input: 110V Temperature Range: 392°F ~ 752°F (200°C ~ 400°C) Type: Solder Pot Control/Display Type: Analog Base Unit: SP1800 Plug Type: Included, Not Specified Wattage: 120W Part Status: Active | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSP2000+ | SRA Soldering Products | Description: LEAD FREE SOLDER POT SP2000+ WIT Features: Ceramic Heater, ESD Safe Packaging: Box Voltage - Input: 110V Temperature Range: 392°F ~ 896°F (200°C ~ 480°C) Type: Solder Pot Control/Display Type: Digital Base Unit: SP2000+ Plug Type: Included, Not Specified Wattage: 600W Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||
| AOSP21307 | Alpha & Omega Semiconductor | P-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||
| AOSP21307 | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 30V 14A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 14A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||
| AOSP21307 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8 Case: SO8 On-state resistance: 11.5mΩ Power dissipation: 2W Polarisation: unipolar Drain current: -11A Drain-source voltage: -30V Gate charge: 17nC Mounting: SMD Type of transistor: P-MOSFET Kind of channel: enhanced Gate-source voltage: ±25V Anzahl je Verpackung: 1 Stücke | auf Bestellung 1108 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOSP21307 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2W; SO8 Case: SO8 On-state resistance: 11.5mΩ Power dissipation: 2W Polarisation: unipolar Drain current: -11A Drain-source voltage: -30V Gate charge: 17nC Mounting: SMD Type of transistor: P-MOSFET Kind of channel: enhanced Gate-source voltage: ±25V | auf Bestellung 1108 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOSP21307 | Alpha & Omega Semiconductor | P-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||
| AOSP21311C | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 30V 6A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 6A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||
| AOSP21311C | Alpha & Omega Semiconductor | P-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||
| AOSP21313C | Alpha & Omega Semiconductor | P-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||
| AOSP21313C | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 30V 7A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V | auf Bestellung 4995 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSP21313C | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar Type of transistor: P-MOSFET Polarisation: unipolar Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||
| AOSP21313C | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar Type of transistor: P-MOSFET Polarisation: unipolar Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||
| AOSP21313C | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 30V 7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSP21321 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±25V On-state resistance: 30mΩ Mounting: SMD Gate charge: 18nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 3016 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOSP21321 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOSP21321 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOSP21321 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±25V On-state resistance: 30mΩ Mounting: SMD Gate charge: 18nC Kind of channel: enhanced | auf Bestellung 3016 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOSP21321 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R | Produkt ist nicht verfügbar | |||||||||||||
| AOSP21321 | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 30V 11A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V | auf Bestellung 9540 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSP21321 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOSP21321 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R | Produkt ist nicht verfügbar | |||||||||||||
| AOSP21321 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||
| AOSP21321 | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 30V 11A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSP21321 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 11A 8-Pin SOIC T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOSP21357 | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 30V 16A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||
| AOSP21357 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 16A 8-Pin SOIC T/R | Produkt ist nicht verfügbar | |||||||||||||
| AOSP21357 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; 2W; SO8 Case: SO8 On-state resistance: 8.5mΩ Power dissipation: 2W Polarisation: unipolar Drain current: -12.5A Drain-source voltage: -30V Gate charge: 25nC Mounting: SMD Type of transistor: P-MOSFET Kind of channel: enhanced Gate-source voltage: ±25V Anzahl je Verpackung: 1 Stücke | auf Bestellung 693 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOSP21357 | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 30V 16A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V | auf Bestellung 2215 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSP21357 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 16A 8-Pin SOIC T/R | Produkt ist nicht verfügbar | |||||||||||||
| AOSP21357 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12.5A; 2W; SO8 Case: SO8 On-state resistance: 8.5mΩ Power dissipation: 2W Polarisation: unipolar Drain current: -12.5A Drain-source voltage: -30V Gate charge: 25nC Mounting: SMD Type of transistor: P-MOSFET Kind of channel: enhanced Gate-source voltage: ±25V | auf Bestellung 693 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOSP32314 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 10nC Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||
| AOSP32314 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 14.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 14.5A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||
| AOSP32314 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R | Produkt ist nicht verfügbar | |||||||||||||
| AOSP32314 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11.5A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 10nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||
| AOSP32314 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 14.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 14.5A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 15 V | auf Bestellung 766 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSP32314 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 14.5A 8-Pin SOIC T/R | Produkt ist nicht verfügbar | |||||||||||||
| AOSP32320C | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 8.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 8.5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V | auf Bestellung 8613 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSP32320C | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 8.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 8.5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSP32320C | Alpha & Omega Semiconductor | 30V N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||
| AOSP32320C | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhanced Power dissipation: 2.5W Polarisation: unipolar Gate charge: 20nC Drain current: 8.5A Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 22mΩ Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||
| AOSP32320C | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.5A; 2.5W; SO8 Mounting: SMD Case: SO8 Kind of channel: enhanced Power dissipation: 2.5W Polarisation: unipolar Gate charge: 20nC Drain current: 8.5A Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 22mΩ | Produkt ist nicht verfügbar | |||||||||||||
| AOSP32368 | Alpha & Omega Semiconductor | 30V N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||
| AOSP32368 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 16A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V | auf Bestellung 6364 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSP32368 | ALPHA & OMEGA SEMICONDUCTOR | AOSP32368 SMD N channel transistors | auf Bestellung 880 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOSP32368 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 16A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSP32368 | Alpha & Omega Semiconductor | 30V N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||
| AOSP36326C | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8 Drain-source voltage: 30V Drain current: 12A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 Anzahl je Verpackung: 1 Stücke | auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOSP36326C | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 12A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 15 V | auf Bestellung 73215 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSP36326C | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8 Drain-source voltage: 30V Drain current: 12A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 | auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOSP36326C | Alpha & Omega Semiconductor | N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||
| AOSP36326C | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 12A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 15 V | auf Bestellung 72000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSP4000 | SRA Soldering Products | Description: MINI SOLDER POT SP4000, 160 WATT Features: Ceramic Heater Packaging: Box Voltage - Input: 110V Temperature Range: 392°F ~ 752°F (200°C ~ 400°C) Type: Solder Pot Control/Display Type: Analog Base Unit: SP4000 Plug Type: Included, Not Specified Wattage: 160W | Produkt ist nicht verfügbar | |||||||||||||
| AOSP62530 | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 63mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||
| AOSP62626E | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||
| AOSP66406 | Alpha & Omega Semiconductor | N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||
| AOSP66406 | ALPHA & OMEGA SEMICONDUCTOR | AOSP66406 SMD N channel transistors | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOSP66919 | ALPHA & OMEGA SEMICONDUCTOR | AOSP66919 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||
| AOSP66920 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 13.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V | auf Bestellung 39480 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSP66920 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 13.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V | auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSP66920 | ALPHA & OMEGA SEMICONDUCTOR | AOSP66920 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||
| AOSP66920 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 13.5A 8-Pin SOIC T/R | Produkt ist nicht verfügbar | |||||||||||||
| AOSP66923 | ALPHA & OMEGA SEMICONDUCTOR | AOSP66923 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||
| AOSP66923 | Alpha & Omega Semiconductor | 100V N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||
| AOSP66923 | Alpha & Omega Semiconductor | 100V N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||
| AOSP66923 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 12A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V | auf Bestellung 9250 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSP66923 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 12A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSP66925 | Alpha & Omega Semiconductor | Medium Voltage MOSFETs (40V - 400V) | Produkt ist nicht verfügbar | |||||||||||||
| AOSP66925 | ALPHA & OMEGA SEMICONDUCTOR | AOSP66925 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||
| AOSS21115C | Alpha & Omega Semiconductor | Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||
| AOSS21115C | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 20V; 4.5A; 1.3W; SOT23 Mounting: SMD Power dissipation: 1.3W Type of transistor: P-MOSFET On-state resistance: 40mΩ Drain current: 4.5A Gate charge: 17nC Drain-source voltage: 20V Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Polarisation: unipolar | auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOSS21115C | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 20V 4.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSS21115C | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 20V; 4.5A; 1.3W; SOT23 Mounting: SMD Power dissipation: 1.3W Type of transistor: P-MOSFET On-state resistance: 40mΩ Drain current: 4.5A Gate charge: 17nC Drain-source voltage: 20V Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Polarisation: unipolar Anzahl je Verpackung: 5 Stücke | auf Bestellung 2995 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOSS21115C | Alpha & Omega Semiconductor | Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||
| AOSS21115C | Alpha & Omega Semiconductor | Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||
| AOSS21115C | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 20V 4.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V | auf Bestellung 23248 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSS21311C | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.3W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: -30V Drain current: -3.3A On-state resistance: 45mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 23nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 6000 Stücke | Produkt ist nicht verfügbar | |||||||||||||
| AOSS21311C | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOSS21311C | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||
| AOSS21311C | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 30V 4.3A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSS21311C | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.3W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: -30V Drain current: -3.3A On-state resistance: 45mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 23nC Kind of channel: enhanced Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||
| AOSS21311C | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOSS21311C | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 30V 4.3A SOT23-3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.3A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V | auf Bestellung 5742 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSS21319C | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 30V 2.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V | auf Bestellung 34193 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSS21319C | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 30V; 2.8A; 1.3W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: 30V Drain current: 2.8A On-state resistance: 0.1Ω Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||
| AOSS21319C | Alpha & Omega Semiconductor | P-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||
| AOSS21319C | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 30V 2.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V | auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSS21319C | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 30V; 2.8A; 1.3W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: 30V Drain current: 2.8A On-state resistance: 0.1Ω Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||
| AOSS21319C | Alpha & Omega Semiconductor | P-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||
| AOSS32136C | Alpha & Omega Semiconductor | 20V N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||
| AOSS32136C | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 20V 6.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V | auf Bestellung 183298 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSS32136C | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 38A; 800mW; SOT23 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 38A Case: SOT23 Drain-source voltage: 20V Drain current: 5A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Gate charge: 14nC Anzahl je Verpackung: 1 Stücke | auf Bestellung 2940 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOSS32136C | Alpha & Omega Semiconductor | 20V N-Channel MOSFET | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||
| AOSS32136C | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 20V 6.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V | auf Bestellung 177000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSS32136C | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 38A; 800mW; SOT23 Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 38A Case: SOT23 Drain-source voltage: 20V Drain current: 5A On-state resistance: 28mΩ Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Gate charge: 14nC | auf Bestellung 2940 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOSS32334C | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||
| AOSS32334C | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; 1.3W; SOT23 Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT23 Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 20nC | auf Bestellung 1060 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOSS32334C | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 6.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 6.2A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V | auf Bestellung 6343 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSS32334C | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||
| AOSS32334C | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 6.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 6.2A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSS32334C | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; 1.3W; SOT23 Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT23 Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 20nC Anzahl je Verpackung: 5 Stücke | auf Bestellung 1060 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOSS32338C | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.3W; SOT23 Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±12V Case: SOT23 Drain-source voltage: 30V Drain current: 4A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 16nC | auf Bestellung 1415 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOSS32338C | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 4A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V | auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSS32338C | Alpha & Omega Semiconductor | 30V N-Channel MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOSS32338C | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.3W; SOT23 Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±12V Case: SOT23 Drain-source voltage: 30V Drain current: 4A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 16nC Anzahl je Verpackung: 5 Stücke | auf Bestellung 1415 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOSS32338C | Alpha & Omega Semiconductor | 30V N-Channel MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||
| AOSS32338C | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 4A SOT23-3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V | auf Bestellung 26569 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSS32338C | Alpha & Omega Semiconductor | 30V N-Channel MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOSS62934 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 2A; 1.4W; SOT23 Drain-source voltage: 100V Drain current: 2A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 3.8nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SOT23 Anzahl je Verpackung: 5 Stücke | auf Bestellung 1395 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOSS62934 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||
| AOSS62934 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 50 V | auf Bestellung 355750 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSS62934 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||
| AOSS62934 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 2A; 1.4W; SOT23 Drain-source voltage: 100V Drain current: 2A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Gate charge: 3.8nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SOT23 | auf Bestellung 1395 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||
| AOSS62934 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, SOT-23-3 Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 2A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 50 V | auf Bestellung 357032 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||
| AOSS62934 LK. | ALPHA&OMEGA | (polish version) Trans MOSFET N-CH 100V 2A 3-Pin SOT-23 TAOSS62934 Anzahl je Verpackung: 100 Stücke | auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||
| AOSX21319C | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 30V 2.6A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.6A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||
| AOSX32128 | Alpha & Omega Semiconductor Inc. | Description: SINGLE Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3.2A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 10 V | Produkt ist nicht verfügbar |