Produkte > MICROSEMI CORPORATION > Alle Produkte des Herstellers MICROSEMI CORPORATION (11462) > Seite 183 nach 192
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| LE71HR8830G | Microsemi Corporation |
Description: VE8830 FULL TRACKING LINE MODULE Packaging: Bulk Supplied Contents: Board(s) |
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3EZ12D5/TR12 | Microsemi Corporation |
 Description: DIODE ZENER 12V 3W DO204ALPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 4.5 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V |
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3EZ12D5E3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 12V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 4.5 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V |
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3EZ12D5/TR8 | Microsemi Corporation |
Description: DIODE ZENER 12V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 4.5 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V |
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3EZ12D5E3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 12V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 4.5 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V |
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| SMBG4735A/TR13 | Microsemi Corporation |
Description: DIODE ZENER 6.2V 2W SMBG Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 2 Ohms Supplier Device Package: SMBG (DO-215AA) Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 3 V |
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| SMBG4735AE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 6.2V 2W SMBG Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-215AA, SMB Gull Wing Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 2 Ohms Supplier Device Package: SMBG (DO-215AA) Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 3 V |
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MXLP5KE22CA | Microsemi Corporation |
Description: TVS DIODE 22VWM 35.5VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 14.1A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXLP5KE22CAe3 | Microsemi Corporation |
Description: TVS DIODE 22VWM 35.5VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 14.1A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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2EZ16D/TR12 | Microsemi Corporation |
Description: DIODE ZENER 16V 2W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V |
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2EZ16D10/TR12 | Microsemi Corporation |
Description: DIODE ZENER 16V 2W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V |
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2EZ16D10E3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 16V 2W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V |
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2EZ16D2/TR12 | Microsemi Corporation |
Description: DIODE ZENER 16V 2W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V |
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2EZ16D2E3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 16V 2W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V |
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2EZ16D5/TR12 | Microsemi Corporation |
Description: DIODE ZENER 16V 2W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V |
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2EZ16D5E3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 16V 2W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V |
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2EZ16DE3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 16V 2W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V |
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2EZ16D/TR8 | Microsemi Corporation |
Description: DIODE ZENER 16V 2W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V |
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2EZ16D10/TR8 | Microsemi Corporation |
Description: DIODE ZENER 16V 2W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 2 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V |
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1N5374Ae3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 75V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 54 V |
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1N5374A/TR8 | Microsemi Corporation |
Description: DIODE ZENER 75V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 54 V |
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1N5374Ae3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 75V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: T-18 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 54 V |
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JANTX1N4461CUS | Microsemi Corporation |
Description: DIODE ZENER 6.8V 1.5W D5A Tolerance: ±2% Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 2.5 Ohms Supplier Device Package: D-5A Grade: Military Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 4.08 V Qualification: MIL-PRF-19500/406 |
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| SMCG5656/TR13 | Microsemi Corporation |
Description: TVS DIODE 73.7VWM 131VC DO215AB Packaging: Tape & Reel (TR) Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 73.7V Supplier Device Package: DO-215AB (SMCG) Unidirectional Channels: 1 Voltage - Breakdown (Min): 81.9V Voltage - Clamping (Max) @ Ipp: 131V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
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| SMCG5656E3/TR13 | Microsemi Corporation |
Description: TVS DIODE 73.7VWM 131VC DO215AB Packaging: Tape & Reel (TR) Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 73.7V Supplier Device Package: DO-215AB (SMCG) Unidirectional Channels: 1 Voltage - Breakdown (Min): 81.9V Voltage - Clamping (Max) @ Ipp: 131V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
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JANTX1N4980CUS | Microsemi Corporation |
Description: DIODE ZENER 82V 5W D5B Tolerance: ±2% Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 82 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: D-5B Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V Qualification: MIL-PRF-19500/435 |
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JANTX1N4980DUS | Microsemi Corporation |
Description: DIODE ZENER 82V 5W D5B Tolerance: ±1% Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 82 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: D-5B Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V Qualification: MIL-PRF-19500/435 |
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SK14E3/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 40V 1A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMBJ) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
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MSCD200-12 | Microsemi Corporation |
Description: DIODE MODULE GP 1200V 200A SD2 Packaging: Bulk Package / Case: D2 Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200A Supplier Device Package: SD2 Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A Current - Reverse Leakage @ Vr: 9 mA @ 1200 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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JANTXV2N3735 | Microsemi Corporation |
Description: TRANS NPN 40V 1.5A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V Supplier Device Package: TO-39 Grade: Military Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W Qualification: MIL-PRF-19500/395 |
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| 689-4D, 4N, 4P | Microsemi Corporation |
Description: DIODE MODULE GP 400V 15A ND Packaging: Bulk Package / Case: Nd Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: Nd Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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JANTX1N4962CUS | Microsemi Corporation |
Description: DIODE ZENER 15V 5W D5B Tolerance: ±2% Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: D-5B Grade: Military Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V Qualification: MIL-PRF-19500/435 |
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| JANTX2N6770 | Microsemi Corporation |
Description: MOSFET N-CH 500V 12A TO3 Packaging: Bulk Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3 Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Qualification: MIL-PRF-19500/543 |
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| JANTXV2N6770 | Microsemi Corporation |
Description: MOSFET N-CH 500V 12A TO204AE Packaging: Bulk Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-204AE (TO-3) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Qualification: MIL-PRF-19500/543 |
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| JANTXV2N6770T1 | Microsemi Corporation |
Description: MOSFET N-CH 500V 12A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Qualification: MIL-PRF-19500/543 |
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2N6770 | Microsemi Corporation |
Description: MOSFET N-CH 500V 12A TO3 Packaging: Bulk Package / Case: TO-204AE Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V |
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| 2N6770T1 | Microsemi Corporation |
Description: MOSFET N-CH 500V 12A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V Power Dissipation (Max): 4W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V |
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| 1N6302Ae3/TR13 | Microsemi Corporation |
Description: TVS DIODE 154VWM 246VC CASE-1 Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 6.1A Voltage - Reverse Standoff (Typ): 154V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 171V Voltage - Clamping (Max) @ Ipp: 246V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
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1N4698 (DO35) | Microsemi Corporation |
Description: DIODE ZENER 11V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 11 V Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 8.4 V |
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ARF448BG | Microsemi Corporation |
Description: RF MOSFET 150V TO247 Packaging: Tube Package / Case: TO-247-3 Current Rating (Amps): 15A Frequency: 40.68MHz Configuration: N-Channel Power - Output: 140W Gain: 15dB Technology: MOSFET Supplier Device Package: TO-247 Voltage - Rated: 450 V Voltage - Test: 150 V |
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ARF448AG | Microsemi Corporation |
Description: RF MOSFET 150V TO247 Packaging: Tube Package / Case: TO-247-3 Current Rating (Amps): 15A Frequency: 40.68MHz Configuration: N-Channel Power - Output: 230W Gain: 15dB Technology: MOSFET Supplier Device Package: TO-247 Voltage - Rated: 450 V Voltage - Test: 150 V |
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VJ447M | Microsemi Corporation |
Description: BRIDGE RECT 1PHASE 900V 10A Packaging: Bulk Mounting Type: Through Hole Diode Type: Single Phase Technology: Avalanche Voltage - Peak Reverse (Max): 900 V Current - Average Rectified (Io): 10 A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 900 V |
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PD69104BILQ-TR | Microsemi Corporation |
Description: IC POE CNTRL 4 CHANNEL 48QFN Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Type: Controller (PD) Operating Temperature: -10°C ~ 85°C Voltage - Supply: 44V ~ 57V Current - Supply: 10mA Internal Switch(s): Yes Standards: 802.3at (PoE+), 802.3af (PoE) Supplier Device Package: 48-QFN (8x8) Auxiliary Sense: No Number of Channels: 4 Power - Max: 25.5 W |
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| MDS800 | Microsemi Corporation |
Description: RF TRANS NPN 65V 1.09GHZ 55ST-1 Packaging: Bulk Package / Case: 55ST-1 Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 8.6dB Power - Max: 1458W Current - Collector (Ic) (Max): 60A Voltage - Collector Emitter Breakdown (Max): 65V DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Frequency - Transition: 1.09GHz Supplier Device Package: 55ST-1 |
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MXLPLAD6.5KP70CA | Microsemi Corporation |
Description: TVS DIODE 70VWM 113VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 57.5A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 77.8V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXLPLAD6.5KP70CAe3 | Microsemi Corporation |
Description: TVS DIODE 70VWM 113VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 57.5A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 77.8V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MXPLAD6.5KP70CA | Microsemi Corporation |
Description: TVS DIODE 70VWM 113VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 57.5A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 77.8V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MXPLAD6.5KP70CAe3 | Microsemi Corporation |
Description: TVS DIODE 70VWM 113VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 57.5A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 77.8V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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| MAPLAD6.5KP70CA | Microsemi Corporation |
Description: TVS DIODE 70VWM 113VC MINI-PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 57.5A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: Mini-PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 77.8V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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| MAPLAD6.5KP70CAe3 | Microsemi Corporation |
Description: TVS DIODE 70VWM 113VC MINI-PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 57.5A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: Mini-PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 77.8V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MPLAD6.5KP70CA | Microsemi Corporation |
Description: TVS DIODE 70VWM 113VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 57.5A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 77.8V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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MPLAD6.5KP70CAe3 | Microsemi Corporation |
Description: TVS DIODE 70VWM 113VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 57.5A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 77.8V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No |
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MSKD100-08 | Microsemi Corporation |
 Description: DIODE MODULE GP 800V 100A D1Packaging: Bulk Package / Case: D1 Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: D1 Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 300 A Current - Reverse Leakage @ Vr: 5 mA @ 800 V |
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APT44GA60BD30C | Microsemi Corporation |
Description: IGBT 600V 78A 337W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 26A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 16ns/102ns Switching Energy: 409µJ (on), 450µJ (off) Test Condition: 400V, 26A, 4.7Ohm, 15V Gate Charge: 128 nC Current - Collector (Ic) (Max): 78 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 130 A Power - Max: 337 W |
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APT8024B2LLG | Microsemi Corporation |
Description: MOSFET N-CH 800V 31A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 15.5A, 10V Power Dissipation (Max): 565W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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APT130SM70B | Microsemi Corporation |
Description: SICFET N-CH 700V 110A TO247-3 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 60A, 20V Power Dissipation (Max): 556W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 700 V |
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| 1N4891 | Microsemi Corporation |
Description: DIODE ZENER Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.35 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-7 Power - Max: 400 mW |
Produkt ist nicht verfügbar |
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| 1N4891A | Microsemi Corporation |
Description: DIODE ZENER Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.35 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-7 Power - Max: 400 mW |
Produkt ist nicht verfügbar |
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| 1N4892 | Microsemi Corporation |
Description: DIODE ZENER Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.35 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-7 Power - Max: 400 mW |
Produkt ist nicht verfügbar |
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| 1N4892A | Microsemi Corporation |
Description: DIODE ZENER Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.35 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-7 Power - Max: 400 mW |
Produkt ist nicht verfügbar |
| LE71HR8830G |
Hersteller: Microsemi Corporation
Description: VE8830 FULL TRACKING LINE MODULE
Packaging: Bulk
Supplied Contents: Board(s)
Description: VE8830 FULL TRACKING LINE MODULE
Packaging: Bulk
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
| 3EZ12D5/TR12 |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 12V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Description: DIODE ZENER 12V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Produkt ist nicht verfügbar
| 3EZ12D5E3/TR12 |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 12V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Description: DIODE ZENER 12V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Produkt ist nicht verfügbar
| 3EZ12D5/TR8 |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 12V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Description: DIODE ZENER 12V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Produkt ist nicht verfügbar
| 3EZ12D5E3/TR8 |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 12V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Description: DIODE ZENER 12V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Produkt ist nicht verfügbar
| SMBG4735A/TR13 |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 6.2V 2W SMBG
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Description: DIODE ZENER 6.2V 2W SMBG
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Produkt ist nicht verfügbar
| SMBG4735AE3/TR13 |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 6.2V 2W SMBG
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Description: DIODE ZENER 6.2V 2W SMBG
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: SMBG (DO-215AA)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Produkt ist nicht verfügbar
| MXLP5KE22CA |
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Hersteller: Microsemi Corporation
Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MXLP5KE22CAe3 |
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Hersteller: Microsemi Corporation
Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| 2EZ16D/TR12 |
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Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
| 2EZ16D10/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
| 2EZ16D10E3/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
| 2EZ16D2/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
| 2EZ16D2E3/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
| 2EZ16D5/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
| 2EZ16D5E3/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
| 2EZ16DE3/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
| 2EZ16D/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
| 2EZ16D10/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Description: DIODE ZENER 16V 2W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.2 V
Produkt ist nicht verfügbar
| 1N5374Ae3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 75V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
Description: DIODE ZENER 75V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
Produkt ist nicht verfügbar
| 1N5374A/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 75V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
Description: DIODE ZENER 75V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
Produkt ist nicht verfügbar
| 1N5374Ae3/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 75V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
Description: DIODE ZENER 75V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 54 V
Produkt ist nicht verfügbar
| JANTX1N4461CUS |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 6.8V 1.5W D5A
Tolerance: ±2%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: D-5A
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4.08 V
Qualification: MIL-PRF-19500/406
Description: DIODE ZENER 6.8V 1.5W D5A
Tolerance: ±2%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 2.5 Ohms
Supplier Device Package: D-5A
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4.08 V
Qualification: MIL-PRF-19500/406
Produkt ist nicht verfügbar
| SMCG5656/TR13 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 73.7VWM 131VC DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 73.7V
Supplier Device Package: DO-215AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 81.9V
Voltage - Clamping (Max) @ Ipp: 131V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 73.7VWM 131VC DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 73.7V
Supplier Device Package: DO-215AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 81.9V
Voltage - Clamping (Max) @ Ipp: 131V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| SMCG5656E3/TR13 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 73.7VWM 131VC DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 73.7V
Supplier Device Package: DO-215AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 81.9V
Voltage - Clamping (Max) @ Ipp: 131V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 73.7VWM 131VC DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 73.7V
Supplier Device Package: DO-215AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 81.9V
Voltage - Clamping (Max) @ Ipp: 131V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| JANTX1N4980CUS |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 5W D5B
Tolerance: ±2%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 82V 5W D5B
Tolerance: ±2%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Qualification: MIL-PRF-19500/435
Produkt ist nicht verfügbar
| JANTX1N4980DUS |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 5W D5B
Tolerance: ±1%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 82V 5W D5B
Tolerance: ±1%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Qualification: MIL-PRF-19500/435
Produkt ist nicht verfügbar
| SK14E3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMBJ)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMBJ)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Produkt ist nicht verfügbar
| MSCD200-12 |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE GP 1200V 200A SD2
Packaging: Bulk
Package / Case: D2
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: SD2
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 9 mA @ 1200 V
Description: DIODE MODULE GP 1200V 200A SD2
Packaging: Bulk
Package / Case: D2
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: SD2
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 9 mA @ 1200 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 82.28 EUR |
| JANTXV2N3735 |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 40V 1.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-39
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/395
Description: TRANS NPN 40V 1.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-39
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/395
Produkt ist nicht verfügbar
| 689-4D, 4N, 4P |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE GP 400V 15A ND
Packaging: Bulk
Package / Case: Nd
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: Nd
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE MODULE GP 400V 15A ND
Packaging: Bulk
Package / Case: Nd
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: Nd
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Produkt ist nicht verfügbar
| JANTX1N4962CUS |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 15V 5W D5B
Tolerance: ±2%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 15V 5W D5B
Tolerance: ±2%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Qualification: MIL-PRF-19500/435
Produkt ist nicht verfügbar
| JANTX2N6770 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Qualification: MIL-PRF-19500/543
Description: MOSFET N-CH 500V 12A TO3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Qualification: MIL-PRF-19500/543
Produkt ist nicht verfügbar
| JANTXV2N6770 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO204AE
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AE (TO-3)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Qualification: MIL-PRF-19500/543
Description: MOSFET N-CH 500V 12A TO204AE
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-204AE (TO-3)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Qualification: MIL-PRF-19500/543
Produkt ist nicht verfügbar
| JANTXV2N6770T1 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Qualification: MIL-PRF-19500/543
Description: MOSFET N-CH 500V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Qualification: MIL-PRF-19500/543
Produkt ist nicht verfügbar
| 2N6770 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Description: MOSFET N-CH 500V 12A TO3
Packaging: Bulk
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Produkt ist nicht verfügbar
| 2N6770T1 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Description: MOSFET N-CH 500V 12A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Produkt ist nicht verfügbar
| 1N6302Ae3/TR13 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 154VWM 246VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 154VWM 246VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| 1N4698 (DO35) |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 11V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 8.4 V
Description: DIODE ZENER 11V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 8.4 V
Produkt ist nicht verfügbar
| ARF448BG |
|
Hersteller: Microsemi Corporation
Description: RF MOSFET 150V TO247
Packaging: Tube
Package / Case: TO-247-3
Current Rating (Amps): 15A
Frequency: 40.68MHz
Configuration: N-Channel
Power - Output: 140W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Voltage - Rated: 450 V
Voltage - Test: 150 V
Description: RF MOSFET 150V TO247
Packaging: Tube
Package / Case: TO-247-3
Current Rating (Amps): 15A
Frequency: 40.68MHz
Configuration: N-Channel
Power - Output: 140W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Voltage - Rated: 450 V
Voltage - Test: 150 V
Produkt ist nicht verfügbar
| ARF448AG |
|
Hersteller: Microsemi Corporation
Description: RF MOSFET 150V TO247
Packaging: Tube
Package / Case: TO-247-3
Current Rating (Amps): 15A
Frequency: 40.68MHz
Configuration: N-Channel
Power - Output: 230W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Voltage - Rated: 450 V
Voltage - Test: 150 V
Description: RF MOSFET 150V TO247
Packaging: Tube
Package / Case: TO-247-3
Current Rating (Amps): 15A
Frequency: 40.68MHz
Configuration: N-Channel
Power - Output: 230W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Voltage - Rated: 450 V
Voltage - Test: 150 V
Produkt ist nicht verfügbar
| VJ447M |
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 900V 10A
Packaging: Bulk
Mounting Type: Through Hole
Diode Type: Single Phase
Technology: Avalanche
Voltage - Peak Reverse (Max): 900 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 900 V
Description: BRIDGE RECT 1PHASE 900V 10A
Packaging: Bulk
Mounting Type: Through Hole
Diode Type: Single Phase
Technology: Avalanche
Voltage - Peak Reverse (Max): 900 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 900 V
Produkt ist nicht verfügbar
| PD69104BILQ-TR |
|
Hersteller: Microsemi Corporation
Description: IC POE CNTRL 4 CHANNEL 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Controller (PD)
Operating Temperature: -10°C ~ 85°C
Voltage - Supply: 44V ~ 57V
Current - Supply: 10mA
Internal Switch(s): Yes
Standards: 802.3at (PoE+), 802.3af (PoE)
Supplier Device Package: 48-QFN (8x8)
Auxiliary Sense: No
Number of Channels: 4
Power - Max: 25.5 W
Description: IC POE CNTRL 4 CHANNEL 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Controller (PD)
Operating Temperature: -10°C ~ 85°C
Voltage - Supply: 44V ~ 57V
Current - Supply: 10mA
Internal Switch(s): Yes
Standards: 802.3at (PoE+), 802.3af (PoE)
Supplier Device Package: 48-QFN (8x8)
Auxiliary Sense: No
Number of Channels: 4
Power - Max: 25.5 W
Produkt ist nicht verfügbar
| MDS800 |
|
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 65V 1.09GHZ 55ST-1
Packaging: Bulk
Package / Case: 55ST-1
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8.6dB
Power - Max: 1458W
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Frequency - Transition: 1.09GHz
Supplier Device Package: 55ST-1
Description: RF TRANS NPN 65V 1.09GHZ 55ST-1
Packaging: Bulk
Package / Case: 55ST-1
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 8.6dB
Power - Max: 1458W
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Frequency - Transition: 1.09GHz
Supplier Device Package: 55ST-1
Produkt ist nicht verfügbar
| MXLPLAD6.5KP70CA |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MXLPLAD6.5KP70CAe3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MXPLAD6.5KP70CA |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MXPLAD6.5KP70CAe3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MAPLAD6.5KP70CA |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 70VWM 113VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MAPLAD6.5KP70CAe3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 70VWM 113VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: Mini-PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MPLAD6.5KP70CA |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| MPLAD6.5KP70CAe3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Description: TVS DIODE 70VWM 113VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 57.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
| MSKD100-08 |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE GP 800V 100A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
Description: DIODE MODULE GP 800V 100A D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: D1
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 300 A
Current - Reverse Leakage @ Vr: 5 mA @ 800 V
Produkt ist nicht verfügbar
| APT44GA60BD30C |
|
Hersteller: Microsemi Corporation
Description: IGBT 600V 78A 337W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 26A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/102ns
Switching Energy: 409µJ (on), 450µJ (off)
Test Condition: 400V, 26A, 4.7Ohm, 15V
Gate Charge: 128 nC
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 337 W
Description: IGBT 600V 78A 337W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 26A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/102ns
Switching Energy: 409µJ (on), 450µJ (off)
Test Condition: 400V, 26A, 4.7Ohm, 15V
Gate Charge: 128 nC
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 337 W
Produkt ist nicht verfügbar
| APT8024B2LLG |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 800V 31A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15.5A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V
Description: MOSFET N-CH 800V 31A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15.5A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 39.28 EUR |
| APT130SM70B |
|
Hersteller: Microsemi Corporation
Description: SICFET N-CH 700V 110A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 60A, 20V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 700 V
Description: SICFET N-CH 700V 110A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 60A, 20V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 700 V
Produkt ist nicht verfügbar
| 1N4891 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Produkt ist nicht verfügbar
| 1N4891A |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Produkt ist nicht verfügbar
| 1N4892 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Produkt ist nicht verfügbar
| 1N4892A |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.35 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Produkt ist nicht verfügbar