Produkte > MICROSEMI CORPORATION > Alle Produkte des Herstellers MICROSEMI CORPORATION (11420) > Seite 114 nach 191
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
LE88211DLCT | Microsemi Corporation |
 Description: IC TELECOM INTERFACE 80LQFPPackaging: Tape & Reel (TR) Package / Case: 80-LQFP Mounting Type: Surface Mount Function: Telecom Circuit Interface: PCM Supplier Device Package: 80-eLQFP Part Status: Obsolete Number of Circuits: 2 |
Produkt ist nicht verfügbar |
|||||||||
 |
APT17N80BC3G | Microsemi Corporation |
Description: MOSFET N-CH 800V 17A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||
 |
APT17N80SC3G | Microsemi Corporation |
Description: MOSFET N-CH 800V 17A D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: D3Pak Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||
 |
1N4728 G | Microsemi Corporation |
Description: DIODE ZENER 3.3V 1W DO204AL Packaging: Bulk Tolerance: ±10% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 100 µA @ 1 V |
Produkt ist nicht verfügbar |
|||||||||
 |
1N4728UR-1 | Microsemi Corporation |
Description: DIODE ZENER 3.3V 1W DO213AB Packaging: Bulk Tolerance: ±10% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-213AB Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 100 µA @ 1 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
3EZ200D/TR12 | Microsemi Corporation |
Description: DIODE ZENER 200V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 875 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 152 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
3EZ200D10/TR12 | Microsemi Corporation |
Description: DIODE ZENER 200V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 875 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 152 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
3EZ200D10E3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 200V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 875 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 152 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
3EZ200D2/TR12 | Microsemi Corporation |
Description: DIODE ZENER 200V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 875 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 152 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
3EZ200D2E3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 200V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 875 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 152 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
3EZ200D5/TR12 | Microsemi Corporation |
Description: DIODE ZENER 200V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 875 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 152 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
3EZ200D5E3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 200V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 875 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 152 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
3EZ200DE3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 200V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 875 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 152 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
3EZ200D/TR8 | Microsemi Corporation |
Description: DIODE ZENER 200V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 875 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 152 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
3EZ200D10/TR8 | Microsemi Corporation |
Description: DIODE ZENER 200V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 875 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 152 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
3EZ200D10E3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 200V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 875 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 152 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
3EZ200D2/TR8 | Microsemi Corporation |
Description: DIODE ZENER 200V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 875 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 152 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
3EZ200D2E3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 200V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 875 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 152 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
3EZ200D5/TR8 | Microsemi Corporation |
Description: DIODE ZENER 200V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 875 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 152 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
3EZ200D5E3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 200V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 875 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 152 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
3EZ200DE3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 200V 3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 875 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 152 V |
Produkt ist nicht verfügbar |
|||||||||
 |
JAN2N2221A | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/255 |
Produkt ist nicht verfügbar |
|||||||||
|
|
JANTX2N2221A | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/255 |
Produkt ist nicht verfügbar |
|||||||||
|
|
Jantxv2N2221A | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/255 |
Produkt ist nicht verfügbar |
|||||||||
|
|
2N2221AL | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
|||||||||
|
|
JAN2N2221AL | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/255 |
Produkt ist nicht verfügbar |
|||||||||
|
|
JANTX2N2221AL | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/255 |
Produkt ist nicht verfügbar |
|||||||||
|
|
JANTXV2N2221AL | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/255 |
Produkt ist nicht verfügbar |
|||||||||
 |
2N2221AUA | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A 4SMD Packaging: Bulk Package / Case: 4-SMD Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: 4-SMD Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW |
Produkt ist nicht verfügbar |
|||||||||
| Jan2N2221AUA | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW Grade: Military Qualification: MIL-PRF-19500/255 |
Produkt ist nicht verfügbar |
||||||||||
| Jantx2N2221AUA | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW Grade: Military Qualification: MIL-PRF-19500/255 |
Produkt ist nicht verfügbar |
||||||||||
| Jantxv2N2221AUA | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 650 mW Grade: Military Qualification: MIL-PRF-19500/255 |
Produkt ist nicht verfügbar |
||||||||||
| 2N2221AUB | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A 3SMD Packaging: Bulk Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: 3-SMD Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
||||||||||
 |
Jan2N2221AUB | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/255 |
Produkt ist nicht verfügbar |
|||||||||
|
|
Jantx2N2221AUB | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/255 |
Produkt ist nicht verfügbar |
|||||||||
 |
JANS2N2221AUBC | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A 3SMD Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UBC Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/255 |
Produkt ist nicht verfügbar |
|||||||||
|
|
JANSF2N2221AUB | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A UB Packaging: Tray Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/255 |
Produkt ist nicht verfügbar |
|||||||||
|
|
JANSR2N2221AUB | Microsemi Corporation |
Description: TRANS NPN 50V 0.8A UB Packaging: Tray Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/255 |
Produkt ist nicht verfügbar |
|||||||||
 |
1N5254A (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 27V 500MW DO35 Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
1N5254A (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 27V 500MW DO35 Packaging: Cut Tape (CT) Tolerance: ±10% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
auf Bestellung 7894 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
1N5254B (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 27V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
Produkt ist nicht verfügbar |
|||||||||
 |
BFR92ALT1 | Microsemi Corporation |
Description: RF TRANS 15V 4.5GHZ SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C Power - Max: 273mW Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 14mA, 10V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 3dB @ 500MHz Supplier Device Package: SOT-23 Part Status: Obsolete |
Produkt ist nicht verfügbar |
|||||||||
| 2224-12LP | Microsemi Corporation |
Description: RF POWER TRANSISTOR Packaging: Bulk Part Status: Obsolete |
Produkt ist nicht verfügbar |
||||||||||
 |
MXLPLAD6.5KP100A | Microsemi Corporation |
Description: TVS DIODE 100VWM 162VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 40.1A Voltage - Reverse Standoff (Typ): 100V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 111V Voltage - Clamping (Max) @ Ipp: 162V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Part Status: Obsolete Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
|||||||||
|
|
MXLPLAD6.5KP100Ae3 | Microsemi Corporation |
Description: TVS DIODE 100VWM 162VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 40.1A Voltage - Reverse Standoff (Typ): 100V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 111V Voltage - Clamping (Max) @ Ipp: 162V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Part Status: Obsolete Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
|||||||||
|
|
MXPLAD6.5KP100A | Microsemi Corporation |
Description: TVS DIODE 100VWM 162VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 40.1A Voltage - Reverse Standoff (Typ): 100V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 111V Voltage - Clamping (Max) @ Ipp: 162V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Part Status: Obsolete Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
|||||||||
|
|
MXPLAD6.5KP100Ae3 | Microsemi Corporation |
Description: TVS DIODE 100VWM 162VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 40.1A Voltage - Reverse Standoff (Typ): 100V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 111V Voltage - Clamping (Max) @ Ipp: 162V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Part Status: Obsolete Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
|||||||||
| MAPLAD6.5KP100A | Microsemi Corporation |
Description: TVS DIODE 100VWM 162VC MINI-PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 40.1A Voltage - Reverse Standoff (Typ): 100V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 111V Voltage - Clamping (Max) @ Ipp: 162V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Part Status: Obsolete Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
||||||||||
| MAPLAD6.5KP100Ae3 | Microsemi Corporation |
Description: TVS DIODE 100VWM 162VC MINI-PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 40.1A Voltage - Reverse Standoff (Typ): 100V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 111V Voltage - Clamping (Max) @ Ipp: 162V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Grade: Military Part Status: Obsolete Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
||||||||||
|
|
MPLAD6.5KP100A | Microsemi Corporation |
Description: TVS DIODE 100VWM 162VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 40.1A Voltage - Reverse Standoff (Typ): 100V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 111V Voltage - Clamping (Max) @ Ipp: 162V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
|||||||||
|
|
MPLAD6.5KP100Ae3 | Microsemi Corporation |
Description: TVS DIODE 100VWM 162VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 40.1A Voltage - Reverse Standoff (Typ): 100V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 111V Voltage - Clamping (Max) @ Ipp: 162V Power - Peak Pulse: 6500W (6.5kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
|||||||||
|
|
P6KE13AE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 11.1VWM 18.2VC AXIAL Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 33A Voltage - Reverse Standoff (Typ): 11.1V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 12.4V Voltage - Clamping (Max) @ Ipp: 18.2V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
|||||||||
|
|
1N5246B (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 16V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 12 V |
Produkt ist nicht verfügbar |
|||||||||
 |
1.5KE350CAE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 300VWM 482VC CASE-1 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 4A Voltage - Reverse Standoff (Typ): 300V Supplier Device Package: CASE-1 Bidirectional Channels: 1 Voltage - Breakdown (Min): 332V Voltage - Clamping (Max) @ Ipp: 482V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Obsolete |
Produkt ist nicht verfügbar |
|||||||||
|
|
1.5KE200CAE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 171VWM 274VC CASE-1 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.5A Voltage - Reverse Standoff (Typ): 171V Supplier Device Package: CASE-1 Bidirectional Channels: 1 Voltage - Breakdown (Min): 190V Voltage - Clamping (Max) @ Ipp: 274V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Obsolete |
Produkt ist nicht verfügbar |
|||||||||
 |
SMBJ5338BE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 5W SMBJ |
Produkt ist nicht verfügbar |
|||||||||
 |
SMBJ5338B/TR13 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 5W SMBJ Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 1.5 Ohms Supplier Device Package: DO-214AA (SMBJ) Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
SMBJ5338B/TR13 | Microsemi Corporation |
Description: DIODE ZENER 5.1V 5W SMBJ Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 1.5 Ohms Supplier Device Package: DO-214AA (SMBJ) Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1 V |
Produkt ist nicht verfügbar |
|||||||||
|
|
1.5KE120CAE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 102VWM 165VC CASE-1 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 9.1A Voltage - Reverse Standoff (Typ): 102V Supplier Device Package: CASE-1 Bidirectional Channels: 1 Voltage - Breakdown (Min): 114V Voltage - Clamping (Max) @ Ipp: 165V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Obsolete |
Produkt ist nicht verfügbar |
|||||||||
|
|
P6KE15CAE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 12.8VWM 21.2VC AXIAL Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 28A Voltage - Reverse Standoff (Typ): 12.8V Supplier Device Package: Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 14.3V Voltage - Clamping (Max) @ Ipp: 21.2V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
| LE88211DLCT |
|
Hersteller: Microsemi Corporation
Description: IC TELECOM INTERFACE 80LQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Function: Telecom Circuit
Interface: PCM
Supplier Device Package: 80-eLQFP
Part Status: Obsolete
Number of Circuits: 2
Description: IC TELECOM INTERFACE 80LQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Function: Telecom Circuit
Interface: PCM
Supplier Device Package: 80-eLQFP
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
| APT17N80BC3G |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 800V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Description: MOSFET N-CH 800V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Produkt ist nicht verfügbar
| APT17N80SC3G |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 800V 17A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: D3Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Description: MOSFET N-CH 800V 17A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: D3Pak
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Produkt ist nicht verfügbar
| 1N4728 G |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.3V 1W DO204AL
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Description: DIODE ZENER 3.3V 1W DO204AL
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Produkt ist nicht verfügbar
| 1N4728UR-1 |
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.3V 1W DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Description: DIODE ZENER 3.3V 1W DO213AB
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Produkt ist nicht verfügbar
| 3EZ200D/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Produkt ist nicht verfügbar
| 3EZ200D10/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Produkt ist nicht verfügbar
| 3EZ200D10E3/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Produkt ist nicht verfügbar
| 3EZ200D2/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Produkt ist nicht verfügbar
| 3EZ200D2E3/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Produkt ist nicht verfügbar
| 3EZ200D5/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Produkt ist nicht verfügbar
| 3EZ200D5E3/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Produkt ist nicht verfügbar
| 3EZ200DE3/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Produkt ist nicht verfügbar
| 3EZ200D/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Produkt ist nicht verfügbar
| 3EZ200D10/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Produkt ist nicht verfügbar
| 3EZ200D10E3/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Produkt ist nicht verfügbar
| 3EZ200D2/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Produkt ist nicht verfügbar
| 3EZ200D2E3/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Produkt ist nicht verfügbar
| 3EZ200D5/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Produkt ist nicht verfügbar
| 3EZ200D5E3/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Produkt ist nicht verfügbar
| 3EZ200DE3/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Description: DIODE ZENER 200V 3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 875 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 152 V
Produkt ist nicht verfügbar
| JAN2N2221A |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
| JANTX2N2221A |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
| Jantxv2N2221A |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
| 2N2221AL |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 0.8A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
| JAN2N2221AL |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
| JANTX2N2221AL |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
| JANTXV2N2221AL |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
| 2N2221AUA |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A 4SMD
Packaging: Bulk
Package / Case: 4-SMD
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 4-SMD
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Description: TRANS NPN 50V 0.8A 4SMD
Packaging: Bulk
Package / Case: 4-SMD
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 4-SMD
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Produkt ist nicht verfügbar
| Jan2N2221AUA |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
| Jantx2N2221AUA |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
| Jantxv2N2221AUA |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
| 2N2221AUB |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A 3SMD
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 3-SMD
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 0.8A 3SMD
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 3-SMD
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
| Jan2N2221AUB |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
| Jantx2N2221AUB |
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
| JANS2N2221AUBC |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A 3SMD
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A 3SMD
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
| JANSF2N2221AUB |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UB
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A UB
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
| JANSR2N2221AUB |
|
Hersteller: Microsemi Corporation
Description: TRANS NPN 50V 0.8A UB
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Description: TRANS NPN 50V 0.8A UB
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
| 1N5254A (DO-35) |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 27V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: DIODE ZENER 27V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Produkt ist nicht verfügbar
| 1N5254A (DO-35) |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 27V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: DIODE ZENER 27V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
auf Bestellung 7894 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 7+ | 2.69 EUR |
| 10+ | 2.23 EUR |
| 25+ | 2.16 EUR |
| 100+ | 1.78 EUR |
| 1N5254B (DO-35) |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 27V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: DIODE ZENER 27V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Produkt ist nicht verfügbar
| BFR92ALT1 |
Hersteller: Microsemi Corporation
Description: RF TRANS 15V 4.5GHZ SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Power - Max: 273mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 14mA, 10V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 3dB @ 500MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Description: RF TRANS 15V 4.5GHZ SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Power - Max: 273mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 14mA, 10V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 3dB @ 500MHz
Supplier Device Package: SOT-23
Part Status: Obsolete
Produkt ist nicht verfügbar
| 2224-12LP |
Hersteller: Microsemi Corporation
Description: RF POWER TRANSISTOR
Packaging: Bulk
Part Status: Obsolete
Description: RF POWER TRANSISTOR
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
| MXLPLAD6.5KP100A |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 100VWM 162VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40.1A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
Description: TVS DIODE 100VWM 162VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40.1A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MXLPLAD6.5KP100Ae3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 100VWM 162VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40.1A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
Description: TVS DIODE 100VWM 162VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40.1A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MXPLAD6.5KP100A |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 100VWM 162VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40.1A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
Description: TVS DIODE 100VWM 162VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40.1A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MXPLAD6.5KP100Ae3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 100VWM 162VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40.1A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
Description: TVS DIODE 100VWM 162VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40.1A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MAPLAD6.5KP100A |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 100VWM 162VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40.1A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
Description: TVS DIODE 100VWM 162VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40.1A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MAPLAD6.5KP100Ae3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 100VWM 162VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40.1A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
Description: TVS DIODE 100VWM 162VC MINI-PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40.1A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MPLAD6.5KP100A |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 100VWM 162VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40.1A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 100VWM 162VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40.1A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
| MPLAD6.5KP100Ae3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 100VWM 162VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40.1A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 100VWM 162VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40.1A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 6500W (6.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
| P6KE13AE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 11.1VWM 18.2VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 11.1VWM 18.2VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
| 1N5246B (DO-35) |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 16V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Description: DIODE ZENER 16V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Produkt ist nicht verfügbar
| 1.5KE350CAE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 300VWM 482VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 300VWM 482VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 332V
Voltage - Clamping (Max) @ Ipp: 482V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
| 1.5KE200CAE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 171VWM 274VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 171VWM 274VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
| SMBJ5338BE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 5W SMBJ
Description: DIODE ZENER 5.1V 5W SMBJ
Produkt ist nicht verfügbar
| SMBJ5338B/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 5W SMBJ
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1.5 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Description: DIODE ZENER 5.1V 5W SMBJ
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1.5 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Produkt ist nicht verfügbar
| SMBJ5338B/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 5W SMBJ
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1.5 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Description: DIODE ZENER 5.1V 5W SMBJ
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1.5 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Produkt ist nicht verfügbar
| 1.5KE120CAE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 102VWM 165VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.1A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 102VWM 165VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.1A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
| P6KE15CAE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 12.8VWM 21.2VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 12.8VWM 21.2VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 12.8V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 21.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar