Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (350243) > Seite 791 nach 5838
Foto | Bezeichnung | Hersteller | Beschreibung |
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APTGT50DH60T1G | Microchip Technology | Description: IGBT MODULE 600V 80A 176W SP1 |
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APTGT75DH120T3G | Microchip Technology | Description: IGBT MODULE 1200V 110A 357W SP3 |
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APTLGT300A1208G | Microchip Technology |
Description: MOD IGBT 1200V 440A LP8 Packaging: Bulk Package / Case: 6-PowerSIP Module Mounting Type: Through Hole Type: IGBT Configuration: Half Bridge Voltage - Isolation: 2500Vrms Current: 440 A Voltage: 1.2 kV |
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APT26M100JCU3 | Microchip Technology |
Description: MOSFET N-CH 1000V 26A SOT227 Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V Power Dissipation (Max): 543W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SOT-227 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V |
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APTC60SKM24CT1G | Microchip Technology |
Description: MOSFET N-CH 600V 95A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V Power Dissipation (Max): 462W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 5mA Supplier Device Package: SP1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V |
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APTM100UM65SCAVG | Microchip Technology |
Description: MOSFET N-CH 1000V 145A SP6 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V Power Dissipation (Max): 3250W (Tc) Vgs(th) (Max) @ Id: 5V @ 20mA Supplier Device Package: SP6 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT60N60SCSG | Microchip Technology |
Description: MOSFET N-CH 600V 60A D3PAK Packaging: Bulk Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V Power Dissipation (Max): 431W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: D3Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
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APT14M100S | Microchip Technology |
Description: MOSFET N-CH 1000V 14A D3PAK Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 880mOhm @ 7A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V |
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APT77N60SC6 | Microchip Technology | Description: MOSFET N-CH 600V 77A D3PAK |
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ARF1505 | Microchip Technology | Description: RF PWR MOSFET 300V 25A DIE |
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ARF1511 | Microchip Technology | Description: RF PWR MOSFET 500V 20A DIE |
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ARF449AG | Microchip Technology | Description: RF PWR MOSFET 450V TO-247 |
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ARF449BG | Microchip Technology | Description: RF PWR MOSFET 450V TO-247 |
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ARF465AG | Microchip Technology |
Description: RF PWR MOSFET 1200V 6A TO-247 Packaging: Bulk Package / Case: TO-247-3 Current Rating (Amps): 6A Frequency: 40.68MHz Configuration: N-Channel Power - Output: 150W Gain: 15dB Technology: MOSFET Supplier Device Package: TO-247 Part Status: Active Voltage - Rated: 1200 V Voltage - Test: 300 V |
auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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APTGLQ40HR120CT3G | Microchip Technology |
Description: IGBT MODULE 1200V 75A 250W SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Through Hole Input: Standard Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A NTC Thermistor: Yes Supplier Device Package: SP3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 250 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V |
Produkt ist nicht verfügbar |
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ARF475FL | Microchip Technology |
Description: RF MOSFET 150V Packaging: Bulk Current Rating (Amps): 10A Frequency: 128MHz Configuration: 2 N-Channel (Dual) Common Source Power - Output: 900W Gain: 16dB Technology: MOSFET Part Status: Active Voltage - Rated: 500 V Voltage - Test: 150 V Current - Test: 15 mA |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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APT94N65B2C6 | Microchip Technology |
Description: MOSFET N-CH 650V 95A T-MAX Packaging: Bulk Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 35.2A, 10V Power Dissipation (Max): 833W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3.5mA Supplier Device Package: T-MAX™ [B2] Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8140 pF @ 25 V |
Produkt ist nicht verfügbar |
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APTGLQ40H120T1G | Microchip Technology |
Description: IGBT MODULE 1200V 75A 250W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Through Hole Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 250 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V |
Produkt ist nicht verfügbar |
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APTC90SKM60CT1G | Microchip Technology |
Description: MOSFET N-CH 900V 59A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V Power Dissipation (Max): 462W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 6mA Supplier Device Package: SP1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 100 V |
Produkt ist nicht verfügbar |
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APTM120DA30CT1G | Microchip Technology | Description: MOSFET N-CH 1200V 31A SP1 |
Produkt ist nicht verfügbar |
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ARF1519 | Microchip Technology | Description: RF PWR MOSFET 1000V 20A DIE |
Produkt ist nicht verfügbar |
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APTGLQ100A65T1G | Microchip Technology |
Description: IGBT MODULE 650V 200A 350W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Through Hole Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 350 W Current - Collector Cutoff (Max): 100 µA Input Capacitance (Cies) @ Vce: 6 nF @ 25 V |
Produkt ist nicht verfügbar |
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1PMT4100Ce3/TR13 | Microchip Technology |
Description: DIODE ZENER 7.5V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V |
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1PMT4100Ce3/TR7 | Microchip Technology |
Description: DIODE ZENER 7.5V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V |
Produkt ist nicht verfügbar |
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1PMT4100e3/TR13 | Microchip Technology |
Description: DIODE ZENER 7.5V 1W DO216 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V |
Produkt ist nicht verfügbar |
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1PMT4100E3/TR7 | Microchip Technology |
Description: DIODE ZENER 7.5V 1W DO216 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V |
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1PMT4104/TR13 | Microchip Technology | Description: DIODE ZENER 10V 1W DO216 |
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1PMT4104/TR7 | Microchip Technology | Description: DIODE ZENER 10V 1W DO216 |
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1PMT4104C/TR13 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V |
Produkt ist nicht verfügbar |
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1PMT4104C/TR7 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V |
Produkt ist nicht verfügbar |
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1PMT4104Ce3/TR13 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V |
Produkt ist nicht verfügbar |
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1PMT4104Ce3/TR7 | Microchip Technology |
Description: DIODE ZENER 10V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V |
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1PMT4104e3/TR13 | Microchip Technology | Description: DIODE ZENER 10V 1W DO216 |
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1PMT4104e3/TR7 | Microchip Technology | Description: DIODE ZENER 10V 1W DO216 |
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1PMT4106/TR13 | Microchip Technology |
Description: DIODE ZENER 12V 1W DO216 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V |
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1PMT4106/TR7 | Microchip Technology |
Description: DIODE ZENER 12V 1W DO216 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V |
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1PMT4106C/TR13 | Microchip Technology |
Description: DIODE ZENER 12V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V |
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1PMT4106C/TR7 | Microchip Technology |
Description: DIODE ZENER 12V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V |
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1PMT4106Ce3/TR13 | Microchip Technology |
Description: DIODE ZENER 12V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V |
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1PMT4106Ce3/TR7 | Microchip Technology |
Description: DIODE ZENER 12V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V |
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1PMT4106e3/TR13 | Microchip Technology |
Description: DIODE ZENER 12V 1W DO216 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V |
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1PMT4106e3/TR7 | Microchip Technology |
Description: DIODE ZENER 12V 1W DO216 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V |
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1PMT4107/TR13 | Microchip Technology |
Description: DIODE ZENER 13V 1W DO216 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V |
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1PMT4107/TR7 | Microchip Technology |
Description: DIODE ZENER 13V 1W DO216 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V |
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1PMT4107C/TR13 | Microchip Technology |
Description: DIODE ZENER 13V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V |
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1PMT4107C/TR7 | Microchip Technology |
Description: DIODE ZENER 13V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V |
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1PMT4107Ce3/TR13 | Microchip Technology |
Description: DIODE ZENER 13V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V |
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1PMT4107Ce3/TR7 | Microchip Technology |
Description: DIODE ZENER 13V 1W DO216 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V |
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1PMT4107e3/TR7 | Microchip Technology |
Description: DIODE ZENER 13V 1W DO216 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-216AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-216 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V |
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1PMT4109e3/TR13 | Microchip Technology | Description: DIODE ZENER 15V 1W DO216 |
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1PMT4111/TR13 | Microchip Technology | Description: DIODE ZENER 17V 1W DO216 |
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1PMT4111/TR7 | Microchip Technology | Description: DIODE ZENER 17V 1W DO216 |
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1PMT4111C/TR13 | Microchip Technology | Description: DIODE ZENER 17V 1W DO216 |
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1PMT4111C/TR7 | Microchip Technology | Description: DIODE ZENER 17V 1W DO216 |
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1PMT4111Ce3/TR13 | Microchip Technology | Description: DIODE ZENER 17V 1W DO216 |
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1PMT4111Ce3/TR7 | Microchip Technology | Description: DIODE ZENER 17V 1W DO216 |
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1PMT4111e3/TR13 | Microchip Technology | Description: DIODE ZENER 17V 1W DO216 |
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1PMT4111e3/TR7 | Microchip Technology | Description: DIODE ZENER 17V 1W DO216 |
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1PMT4116/TR13 | Microchip Technology | Description: DIODE ZENER 24V 1W DO216 |
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1PMT4116/TR7 | Microchip Technology | Description: DIODE ZENER 24V 1W DO216 |
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APTGT50DH60T1G |
Hersteller: Microchip Technology
Description: IGBT MODULE 600V 80A 176W SP1
Description: IGBT MODULE 600V 80A 176W SP1
Produkt ist nicht verfügbar
APTGT75DH120T3G |
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 110A 357W SP3
Description: IGBT MODULE 1200V 110A 357W SP3
Produkt ist nicht verfügbar
APTLGT300A1208G |
Hersteller: Microchip Technology
Description: MOD IGBT 1200V 440A LP8
Packaging: Bulk
Package / Case: 6-PowerSIP Module
Mounting Type: Through Hole
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 2500Vrms
Current: 440 A
Voltage: 1.2 kV
Description: MOD IGBT 1200V 440A LP8
Packaging: Bulk
Package / Case: 6-PowerSIP Module
Mounting Type: Through Hole
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 2500Vrms
Current: 440 A
Voltage: 1.2 kV
Produkt ist nicht verfügbar
APT26M100JCU3 |
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 26A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V
Description: MOSFET N-CH 1000V 26A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V
Produkt ist nicht verfügbar
APTC60SKM24CT1G |
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 95A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
Description: MOSFET N-CH 600V 95A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SP1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 25 V
Produkt ist nicht verfügbar
APTM100UM65SCAVG |
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 145A SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Power Dissipation (Max): 3250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 20mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
Description: MOSFET N-CH 1000V 145A SP6
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
Power Dissipation (Max): 3250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 20mA
Supplier Device Package: SP6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
Produkt ist nicht verfügbar
APT60N60SCSG |
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 60A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 600V 60A D3PAK
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: D3Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
APT14M100S |
Hersteller: Microchip Technology
Description: MOSFET N-CH 1000V 14A D3PAK
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 880mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
Description: MOSFET N-CH 1000V 14A D3PAK
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 880mOhm @ 7A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
Produkt ist nicht verfügbar
APT77N60SC6 |
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 77A D3PAK
Description: MOSFET N-CH 600V 77A D3PAK
Produkt ist nicht verfügbar
ARF1505 |
Hersteller: Microchip Technology
Description: RF PWR MOSFET 300V 25A DIE
Description: RF PWR MOSFET 300V 25A DIE
Produkt ist nicht verfügbar
ARF1511 |
Hersteller: Microchip Technology
Description: RF PWR MOSFET 500V 20A DIE
Description: RF PWR MOSFET 500V 20A DIE
Produkt ist nicht verfügbar
ARF449AG |
Hersteller: Microchip Technology
Description: RF PWR MOSFET 450V TO-247
Description: RF PWR MOSFET 450V TO-247
Produkt ist nicht verfügbar
ARF449BG |
Hersteller: Microchip Technology
Description: RF PWR MOSFET 450V TO-247
Description: RF PWR MOSFET 450V TO-247
Produkt ist nicht verfügbar
ARF465AG |
Hersteller: Microchip Technology
Description: RF PWR MOSFET 1200V 6A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Current Rating (Amps): 6A
Frequency: 40.68MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 1200 V
Voltage - Test: 300 V
Description: RF PWR MOSFET 1200V 6A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Current Rating (Amps): 6A
Frequency: 40.68MHz
Configuration: N-Channel
Power - Output: 150W
Gain: 15dB
Technology: MOSFET
Supplier Device Package: TO-247
Part Status: Active
Voltage - Rated: 1200 V
Voltage - Test: 300 V
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 108.8 EUR |
APTGLQ40HR120CT3G |
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 75A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Through Hole
Input: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
Description: IGBT MODULE 1200V 75A 250W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Through Hole
Input: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
Produkt ist nicht verfügbar
ARF475FL |
Hersteller: Microchip Technology
Description: RF MOSFET 150V
Packaging: Bulk
Current Rating (Amps): 10A
Frequency: 128MHz
Configuration: 2 N-Channel (Dual) Common Source
Power - Output: 900W
Gain: 16dB
Technology: MOSFET
Part Status: Active
Voltage - Rated: 500 V
Voltage - Test: 150 V
Current - Test: 15 mA
Description: RF MOSFET 150V
Packaging: Bulk
Current Rating (Amps): 10A
Frequency: 128MHz
Configuration: 2 N-Channel (Dual) Common Source
Power - Output: 900W
Gain: 16dB
Technology: MOSFET
Part Status: Active
Voltage - Rated: 500 V
Voltage - Test: 150 V
Current - Test: 15 mA
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 241.35 EUR |
APT94N65B2C6 |
Hersteller: Microchip Technology
Description: MOSFET N-CH 650V 95A T-MAX
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35.2A, 10V
Power Dissipation (Max): 833W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8140 pF @ 25 V
Description: MOSFET N-CH 650V 95A T-MAX
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 35.2A, 10V
Power Dissipation (Max): 833W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.5mA
Supplier Device Package: T-MAX™ [B2]
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8140 pF @ 25 V
Produkt ist nicht verfügbar
APTGLQ40H120T1G |
Hersteller: Microchip Technology
Description: IGBT MODULE 1200V 75A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Through Hole
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
Description: IGBT MODULE 1200V 75A 250W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Through Hole
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 2.3 nF @ 25 V
Produkt ist nicht verfügbar
APTC90SKM60CT1G |
Hersteller: Microchip Technology
Description: MOSFET N-CH 900V 59A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Supplier Device Package: SP1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 100 V
Description: MOSFET N-CH 900V 59A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Supplier Device Package: SP1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 540 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 100 V
Produkt ist nicht verfügbar
APTM120DA30CT1G |
Hersteller: Microchip Technology
Description: MOSFET N-CH 1200V 31A SP1
Description: MOSFET N-CH 1200V 31A SP1
Produkt ist nicht verfügbar
ARF1519 |
Hersteller: Microchip Technology
Description: RF PWR MOSFET 1000V 20A DIE
Description: RF PWR MOSFET 1000V 20A DIE
Produkt ist nicht verfügbar
APTGLQ100A65T1G |
Hersteller: Microchip Technology
Description: IGBT MODULE 650V 200A 350W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
Description: IGBT MODULE 650V 200A 350W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Through Hole
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 350 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 6 nF @ 25 V
Produkt ist nicht verfügbar
1PMT4100Ce3/TR13 |
Hersteller: Microchip Technology
Description: DIODE ZENER 7.5V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
Description: DIODE ZENER 7.5V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
Produkt ist nicht verfügbar
1PMT4100Ce3/TR7 |
Hersteller: Microchip Technology
Description: DIODE ZENER 7.5V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
Description: DIODE ZENER 7.5V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
Produkt ist nicht verfügbar
1PMT4100e3/TR13 |
Hersteller: Microchip Technology
Description: DIODE ZENER 7.5V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
Description: DIODE ZENER 7.5V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
Produkt ist nicht verfügbar
1PMT4100E3/TR7 |
Hersteller: Microchip Technology
Description: DIODE ZENER 7.5V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
Description: DIODE ZENER 7.5V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5.7 V
Produkt ist nicht verfügbar
1PMT4104/TR13 |
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Description: DIODE ZENER 10V 1W DO216
Produkt ist nicht verfügbar
1PMT4104/TR7 |
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Description: DIODE ZENER 10V 1W DO216
Produkt ist nicht verfügbar
1PMT4104C/TR13 |
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
Produkt ist nicht verfügbar
1PMT4104C/TR7 |
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
Produkt ist nicht verfügbar
1PMT4104Ce3/TR13 |
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
Produkt ist nicht verfügbar
1PMT4104Ce3/TR7 |
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
Description: DIODE ZENER 10V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 7.6 V
Produkt ist nicht verfügbar
1PMT4104e3/TR13 |
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Description: DIODE ZENER 10V 1W DO216
Produkt ist nicht verfügbar
1PMT4104e3/TR7 |
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 1W DO216
Description: DIODE ZENER 10V 1W DO216
Produkt ist nicht verfügbar
1PMT4106/TR13 |
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Description: DIODE ZENER 12V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Produkt ist nicht verfügbar
1PMT4106/TR7 |
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Description: DIODE ZENER 12V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Produkt ist nicht verfügbar
1PMT4106C/TR13 |
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Description: DIODE ZENER 12V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Produkt ist nicht verfügbar
1PMT4106C/TR7 |
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Description: DIODE ZENER 12V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Produkt ist nicht verfügbar
1PMT4106Ce3/TR13 |
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Description: DIODE ZENER 12V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Produkt ist nicht verfügbar
1PMT4106Ce3/TR7 |
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Description: DIODE ZENER 12V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Produkt ist nicht verfügbar
1PMT4106e3/TR13 |
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Description: DIODE ZENER 12V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Produkt ist nicht verfügbar
1PMT4106e3/TR7 |
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Description: DIODE ZENER 12V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.12 V
Produkt ist nicht verfügbar
1PMT4107/TR13 |
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Description: DIODE ZENER 13V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Produkt ist nicht verfügbar
1PMT4107/TR7 |
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Description: DIODE ZENER 13V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Produkt ist nicht verfügbar
1PMT4107C/TR13 |
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Description: DIODE ZENER 13V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Produkt ist nicht verfügbar
1PMT4107C/TR7 |
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Description: DIODE ZENER 13V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Produkt ist nicht verfügbar
1PMT4107Ce3/TR13 |
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Description: DIODE ZENER 13V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Produkt ist nicht verfügbar
1PMT4107Ce3/TR7 |
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Description: DIODE ZENER 13V 1W DO216
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Produkt ist nicht verfügbar
1PMT4107e3/TR7 |
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Description: DIODE ZENER 13V 1W DO216
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-216
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Produkt ist nicht verfügbar
1PMT4109e3/TR13 |
Hersteller: Microchip Technology
Description: DIODE ZENER 15V 1W DO216
Description: DIODE ZENER 15V 1W DO216
Produkt ist nicht verfügbar
1PMT4111/TR13 |
Hersteller: Microchip Technology
Description: DIODE ZENER 17V 1W DO216
Description: DIODE ZENER 17V 1W DO216
Produkt ist nicht verfügbar
1PMT4111/TR7 |
Hersteller: Microchip Technology
Description: DIODE ZENER 17V 1W DO216
Description: DIODE ZENER 17V 1W DO216
Produkt ist nicht verfügbar
1PMT4111C/TR13 |
Hersteller: Microchip Technology
Description: DIODE ZENER 17V 1W DO216
Description: DIODE ZENER 17V 1W DO216
Produkt ist nicht verfügbar
1PMT4111C/TR7 |
Hersteller: Microchip Technology
Description: DIODE ZENER 17V 1W DO216
Description: DIODE ZENER 17V 1W DO216
Produkt ist nicht verfügbar
1PMT4111Ce3/TR13 |
Hersteller: Microchip Technology
Description: DIODE ZENER 17V 1W DO216
Description: DIODE ZENER 17V 1W DO216
Produkt ist nicht verfügbar
1PMT4111Ce3/TR7 |
Hersteller: Microchip Technology
Description: DIODE ZENER 17V 1W DO216
Description: DIODE ZENER 17V 1W DO216
Produkt ist nicht verfügbar
1PMT4111e3/TR13 |
Hersteller: Microchip Technology
Description: DIODE ZENER 17V 1W DO216
Description: DIODE ZENER 17V 1W DO216
Produkt ist nicht verfügbar
1PMT4111e3/TR7 |
Hersteller: Microchip Technology
Description: DIODE ZENER 17V 1W DO216
Description: DIODE ZENER 17V 1W DO216
Produkt ist nicht verfügbar
1PMT4116/TR13 |
Hersteller: Microchip Technology
Description: DIODE ZENER 24V 1W DO216
Description: DIODE ZENER 24V 1W DO216
Produkt ist nicht verfügbar
1PMT4116/TR7 |
Hersteller: Microchip Technology
Description: DIODE ZENER 24V 1W DO216
Description: DIODE ZENER 24V 1W DO216
Produkt ist nicht verfügbar