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APT5014SLLG APT5014SLLG Microchip Technology 6299-apt5014bllg-apt5014sllg-datasheet Description: MOSFET N-CH 500V 35A D3PAK
Produkt ist nicht verfügbar
APT5016BFLLG APT5016BFLLG Microchip Technology 6303-apt5016bfllg-apt5016sfllg-datasheet Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 25 V
Produkt ist nicht verfügbar
APT5016BLLG APT5016BLLG Microchip Technology 6304-apt5016bllg-apt5016sllg-datasheet Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 25 V
Produkt ist nicht verfügbar
APT5018BLLG APT5018BLLG Microchip Technology APT5018_B,S_LL.pdf Description: MOSFET N-CH 500V 27A TO247
Produkt ist nicht verfügbar
APT5024BFLLG APT5024BFLLG Microchip Technology 7080-apt5024bfllg-apt5024sfllg-datasheet Description: MOSFET N-CH 500V 22A TO247
Produkt ist nicht verfügbar
APT5024BLLG APT5024BLLG Microchip Technology 6316-apt5024bllg-apt5024sllg-datasheet Description: MOSFET N-CH 500V 22A TO247
Produkt ist nicht verfügbar
APT50GF120LRG APT50GF120LRG Microchip Technology 7089-apt50gf120b2g-apt50gf120lrg-datasheet Description: IGBT NPT 1200V 135A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
Supplier Device Package: TO-264 [L]
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/260ns
Switching Energy: 3.6mJ (on), 2.64mJ (off)
Test Condition: 800V, 50A, 1Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 135 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 781 W
auf Bestellung 28 Stücke:
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1+35.78 EUR
APT50GN120B2G APT50GN120B2G Microchip Technology 6323-apt50gn120b2g-datasheet Description: IGBT 1200V 134A 543W TO-247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 28ns/320ns
Switching Energy: 4495µJ (off)
Test Condition: 800V, 50A, 2.2Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 543 W
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1+17.99 EUR
APT50GN120L2DQ2G APT50GN120L2DQ2G Microchip Technology 6324-apt50gn120l2dq2g-datasheet Description: IGBT 1200V 134A 543W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 28ns/320ns
Switching Energy: 4495µJ (off)
Test Condition: 800V, 50A, 2.2Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 543 W
auf Bestellung 51 Stücke:
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1+28.79 EUR
APT50GN60BDQ2G APT50GN60BDQ2G Microchip Technology 7095-apt50gn60bdq2g-apt50gn60sdq2g-datasheet Description: IGBT TRENCH FS 600V 107A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/230ns
Switching Energy: 1185µJ (on), 1565µJ (off)
Test Condition: 400V, 50A, 4.3Ohm, 15V
Gate Charge: 325 nC
Part Status: Active
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 366 W
auf Bestellung 80 Stücke:
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Mindestbestellmenge: 2
APT50GN60BG APT50GN60BG Microchip Technology 7094-apt50gn60bg-apt50gn60sg-datasheet Description: IGBT TRENCH FS 600V 107A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/230ns
Switching Energy: 1185µJ (on), 1565µJ (off)
Test Condition: 400V, 50A, 4.3Ohm, 15V
Gate Charge: 325 nC
Part Status: Active
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 366 W
auf Bestellung 108 Stücke:
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100+ 7.05 EUR
Mindestbestellmenge: 3
APT50GP60B2DQ2G APT50GP60B2DQ2G Microchip Technology 6327-apt50gp60b2dq2-datasheet Description: IGBT 600V 150A 625W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/85ns
Switching Energy: 465µJ (on), 635µJ (off)
Test Condition: 400V, 50A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 190 A
Power - Max: 625 W
Produkt ist nicht verfügbar
APT50GP60BG APT50GP60BG Microchip Technology 7096-apt50gp60bg-apt50gp60sg-datasheet Description: IGBT 600V 100A 625W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/83ns
Switching Energy: 465µJ (on), 637µJ (off)
Test Condition: 400V, 50A, 5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 190 A
Power - Max: 625 W
Produkt ist nicht verfügbar
APT50GP60J APT50GP60J Microchip Technology 6328-apt50gp60j-datasheet Description: IGBT MOD 600V 100A 329W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 329 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 5.7 nF @ 25 V
Produkt ist nicht verfügbar
APT50GP60JDQ2 APT50GP60JDQ2 Microchip Technology 6329-apt50gp60jdq2-datasheet Description: IGBT MOD 600V 100A 329W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 329 W
Current - Collector Cutoff (Max): 525 µA
Input Capacitance (Cies) @ Vce: 5.7 nF @ 25 V
Produkt ist nicht verfügbar
APT50GT120JRDQ2 APT50GT120JRDQ2 Microchip Technology APT50GT120JRDQ2.pdf Description: IGBT MOD 1200V 72A 379W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 379 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Produkt ist nicht verfügbar
APT50GT60BRDQ2G APT50GT60BRDQ2G Microchip Technology index.php?option=com_docman&task=doc_download&gid=7117 Description: IGBT 600V 110A 446W TO247
auf Bestellung 80 Stücke:
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1+20.43 EUR
APT50GT60BRG APT50GT60BRG Microchip Technology index.php?option=com_docman&task=doc_download&gid=7114 Description: IGBT 600V 110A 446W TO247
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.37 EUR
Mindestbestellmenge: 2
APT50M38JLL APT50M38JLL Microchip Technology 6334-apt50m38jll-datasheet Description: MOSFET N-CH 500V 88A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 44A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Produkt ist nicht verfügbar
APT50M50JLL APT50M50JLL Microchip Technology 6336-apt50m50jll-datasheet Description: MOSFET N-CH 500V 71A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 35.5A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10550 pF @ 25 V
auf Bestellung 12 Stücke:
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APT50M65JFLL APT50M65JFLL Microchip Technology 6347-apt50m65jfll-datasheet Description: MOSFET N-CH 500V 58A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 29A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7010 pF @ 25 V
Produkt ist nicht verfügbar
APT50M65JLL APT50M65JLL Microchip Technology 6348-apt50m65jll-datasheet Description: MOSFET N-CH 500V 58A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 29A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7010 pF @ 25 V
auf Bestellung 2 Stücke:
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1+70.84 EUR
APT51M50J APT51M50J Microchip Technology 7132-apt51m50j-datasheet Description: MOSFET N-CH 500V 51A ISOTOP
Produkt ist nicht verfügbar
APT53F80J APT53F80J Microchip Technology 7135-apt53f80j-datasheet Description: MOSFET N-CH 800V 57A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V
auf Bestellung 109 Stücke:
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1+114.73 EUR
100+ 93.1 EUR
APT56M50L APT56M50L Microchip Technology 7153-apt56m50b2-apt56m50l-datasheet Description: MOSFET N-CH 500V 56A TO264
Produkt ist nicht verfügbar
APT56M60L APT56M60L Microchip Technology 7157-apt56m60b2-apt56m60l-datasheet Description: MOSFET N-CH 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 28A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Produkt ist nicht verfügbar
APT58M50J APT58M50J Microchip Technology 7162-apt58m50j-datasheet Description: MOSFET N-CH 500V 58A ISOTOP
Produkt ist nicht verfügbar
APT58M80J APT58M80J Microchip Technology 7168-apt58m80j-datasheet Description: MOSFET N-CH 800V 60A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V
auf Bestellung 2 Stücke:
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APT6010B2LLG APT6010B2LLG Microchip Technology 7172-apt6010b2llg-apt6010lllg-datasheet Description: MOSFET N-CH 600V 54A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Produkt ist nicht verfügbar
APT6010JFLL APT6010JFLL Microchip Technology 7173-apt6010jfll-datasheet Description: MOSFET N-CH 600V 47A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Produkt ist nicht verfügbar
APT6010JLL APT6010JLL Microchip Technology 7174-apt6010jll-datasheet Description: MOSFET N-CH 600V 47A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Produkt ist nicht verfügbar
APT6010LLLG APT6010LLLG Microchip Technology 7172-apt6010b2llg-apt6010lllg-datasheet Description: MOSFET N-CH 600V 54A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Produkt ist nicht verfügbar
APT6013JFLL APT6013JFLL Microchip Technology 6390-apt6013jfll-datasheet Description: MOSFET N-CH 600V 39A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 19.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V
Produkt ist nicht verfügbar
APT6013JLL APT6013JLL Microchip Technology 6391-apt6013jll-datasheet Description: MOSFET N-CH 600V 39A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 19.5A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V
Produkt ist nicht verfügbar
APT6013LLLG APT6013LLLG Microchip Technology 7175-apt6013b2llg-apt6013lllg-datasheet Description: MOSFET N-CH 600V 43A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 21.5A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V
Produkt ist nicht verfügbar
APT6017JFLL APT6017JFLL Microchip Technology 6400-apt6017jfll-datasheet Description: MOSFET N-CH 600V 31A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 15.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
APT6021BFLLG APT6021BFLLG Microchip Technology 6404-apt6021bfllg-apt6021sfllg-datasheet Description: MOSFET N-CH 600V 29A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
Produkt ist nicht verfügbar
APT6021BLLG APT6021BLLG Microchip Technology 6405-apt6021bllg-apt6021sllg-datasheet Description: MOSFET N-CH 600V 29A TO247
Produkt ist nicht verfügbar
APT6029BFLLG APT6029BFLLG Microchip Technology 6412-apt6029bfllg-apt6029sfllg-datasheet Description: MOSFET N-CH 600V 21A TO-247
Produkt ist nicht verfügbar
APT6029BLLG APT6029BLLG Microchip Technology 6413-apt6029bllg-apt6029sllg-datasheet Description: MOSFET N-CH 600V 21A TO247
Produkt ist nicht verfügbar
APT6038BFLLG APT6038BFLLG Microchip Technology 6419-apt6038bfllg-apt6038sfllg-datasheet Description: MOSFET N-CH 600V 17A TO-247
Produkt ist nicht verfügbar
APT6038BLLG APT6038BLLG Microchip Technology 6420-apt6038bllg-apt6038sllg-datasheet Description: MOSFET N-CH 600V 17A TO-247
Produkt ist nicht verfügbar
APT60D100BG APT60D100BG Microchip Technology 6423-apt60d100bg-apt60d100sg-datasheet Description: DIODE GEN PURP 1KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
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APT60D100LCTG APT60D100LCTG Microchip Technology 6424-apt60d100lctg-datasheet Description: DIODE ARRAY GP 1000V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Produkt ist nicht verfügbar
APT60D100SG APT60D100SG Microchip Technology 6423-apt60d100bg-apt60d100sg-datasheet Description: DIODE GEN PURP 1KV 60A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Produkt ist nicht verfügbar
APT60D120BG APT60D120BG Microchip Technology 6425-apt60d120bg-apt60d120sg-datasheet Description: DIODE GP 1.2KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
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APT60D120SG APT60D120SG Microchip Technology 6425-apt60d120bg-apt60d120sg-datasheet Description: DIODE GEN PURP 1.2KV 60A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Produkt ist nicht verfügbar
APT60D20BG APT60D20BG Microchip Technology 6426-apt60d20bg-apt60d20sg-datasheet Description: DIODE GP 200V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Produkt ist nicht verfügbar
APT60D40BG APT60D40BG Microchip Technology 6430-apt60d40bg-apt60d40sg-datasheet Description: DIODE GP 400V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Produkt ist nicht verfügbar
APT60D40LCTG APT60D40LCTG Microchip Technology 6431-apt60d40lctg-datasheet Description: DIODE ARRAY GP 400V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Produkt ist nicht verfügbar
APT60D60BG APT60D60BG Microchip Technology 123919-apt60d60bg-apt60d60sg-datasheet Description: DIODE GP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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APT60D60LCTG APT60D60LCTG Microchip Technology 7183-apt60d60lctg-datasheet Description: DIODE ARRAY GP 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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APT60DQ100BG APT60DQ100BG Microchip Technology 123788-apt60dq100b-s-g-b-pdf Description: DIODE GEN PURP 1KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 255 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Produkt ist nicht verfügbar
APT60DQ100LCTG APT60DQ100LCTG Microchip Technology 123692-apt60dq100lctg-datasheet Description: DIODE ARRAY GP 1000V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 255 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Produkt ist nicht verfügbar
APT60DQ60BCTG APT60DQ60BCTG Microchip Technology 6436-apt60dq60bctg-datasheet Description: DIODE ARRAY GP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
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APT60GF120JRDQ3 APT60GF120JRDQ3 Microchip Technology index.php?option=com_docman&task=doc_download&gid=7197 Description: IGBT MOD 1200V 149A 625W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 149 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 7.08 nF @ 25 V
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APT60GT60BRG APT60GT60BRG Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT NPT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 26ns/395ns
Switching Energy: 3.4mJ
Gate Charge: 275 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 500 W
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APT60M60JFLL APT60M60JFLL Microchip Technology APT60M60JFLL.pdf Description: MOSFET N-CH 600V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V
Produkt ist nicht verfügbar
APT60M60JLL APT60M60JLL Microchip Technology APT60M60JLL.pdf Description: MOSFET N-CH 600V 70A ISOTOP
Produkt ist nicht verfügbar
APT60M75JFLL APT60M75JFLL Microchip Technology 6442-apt60m75jfll-datasheet Description: MOSFET N-CH 600V 58A ISOTOP
Produkt ist nicht verfügbar
APT5014SLLG 6299-apt5014bllg-apt5014sllg-datasheet
APT5014SLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 35A D3PAK
Produkt ist nicht verfügbar
APT5016BFLLG 6303-apt5016bfllg-apt5016sfllg-datasheet
APT5016BFLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 25 V
Produkt ist nicht verfügbar
APT5016BLLG 6304-apt5016bllg-apt5016sllg-datasheet
APT5016BLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 25 V
Produkt ist nicht verfügbar
APT5018BLLG APT5018_B,S_LL.pdf
APT5018BLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 27A TO247
Produkt ist nicht verfügbar
APT5024BFLLG 7080-apt5024bfllg-apt5024sfllg-datasheet
APT5024BFLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 22A TO247
Produkt ist nicht verfügbar
APT5024BLLG 6316-apt5024bllg-apt5024sllg-datasheet
APT5024BLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 22A TO247
Produkt ist nicht verfügbar
APT50GF120LRG 7089-apt50gf120b2g-apt50gf120lrg-datasheet
APT50GF120LRG
Hersteller: Microchip Technology
Description: IGBT NPT 1200V 135A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
Supplier Device Package: TO-264 [L]
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/260ns
Switching Energy: 3.6mJ (on), 2.64mJ (off)
Test Condition: 800V, 50A, 1Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 135 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 781 W
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1+35.78 EUR
APT50GN120B2G 6323-apt50gn120b2g-datasheet
APT50GN120B2G
Hersteller: Microchip Technology
Description: IGBT 1200V 134A 543W TO-247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 28ns/320ns
Switching Energy: 4495µJ (off)
Test Condition: 800V, 50A, 2.2Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 543 W
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APT50GN120L2DQ2G 6324-apt50gn120l2dq2g-datasheet
APT50GN120L2DQ2G
Hersteller: Microchip Technology
Description: IGBT 1200V 134A 543W TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 28ns/320ns
Switching Energy: 4495µJ (off)
Test Condition: 800V, 50A, 2.2Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 543 W
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APT50GN60BDQ2G 7095-apt50gn60bdq2g-apt50gn60sdq2g-datasheet
APT50GN60BDQ2G
Hersteller: Microchip Technology
Description: IGBT TRENCH FS 600V 107A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/230ns
Switching Energy: 1185µJ (on), 1565µJ (off)
Test Condition: 400V, 50A, 4.3Ohm, 15V
Gate Charge: 325 nC
Part Status: Active
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 366 W
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APT50GN60BG 7094-apt50gn60bg-apt50gn60sg-datasheet
APT50GN60BG
Hersteller: Microchip Technology
Description: IGBT TRENCH FS 600V 107A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Supplier Device Package: TO-247 [B]
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/230ns
Switching Energy: 1185µJ (on), 1565µJ (off)
Test Condition: 400V, 50A, 4.3Ohm, 15V
Gate Charge: 325 nC
Part Status: Active
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 366 W
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APT50GP60B2DQ2G 6327-apt50gp60b2dq2-datasheet
APT50GP60B2DQ2G
Hersteller: Microchip Technology
Description: IGBT 600V 150A 625W TMAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/85ns
Switching Energy: 465µJ (on), 635µJ (off)
Test Condition: 400V, 50A, 4.3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 190 A
Power - Max: 625 W
Produkt ist nicht verfügbar
APT50GP60BG 7096-apt50gp60bg-apt50gp60sg-datasheet
APT50GP60BG
Hersteller: Microchip Technology
Description: IGBT 600V 100A 625W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-247 [B]
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/83ns
Switching Energy: 465µJ (on), 637µJ (off)
Test Condition: 400V, 50A, 5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 190 A
Power - Max: 625 W
Produkt ist nicht verfügbar
APT50GP60J 6328-apt50gp60j-datasheet
APT50GP60J
Hersteller: Microchip Technology
Description: IGBT MOD 600V 100A 329W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 329 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 5.7 nF @ 25 V
Produkt ist nicht verfügbar
APT50GP60JDQ2 6329-apt50gp60jdq2-datasheet
APT50GP60JDQ2
Hersteller: Microchip Technology
Description: IGBT MOD 600V 100A 329W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 329 W
Current - Collector Cutoff (Max): 525 µA
Input Capacitance (Cies) @ Vce: 5.7 nF @ 25 V
Produkt ist nicht verfügbar
APT50GT120JRDQ2 APT50GT120JRDQ2.pdf
APT50GT120JRDQ2
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 72A 379W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Current - Collector (Ic) (Max): 72 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 379 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Produkt ist nicht verfügbar
APT50GT60BRDQ2G index.php?option=com_docman&task=doc_download&gid=7117
APT50GT60BRDQ2G
Hersteller: Microchip Technology
Description: IGBT 600V 110A 446W TO247
auf Bestellung 80 Stücke:
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Anzahl Preis ohne MwSt
1+20.43 EUR
APT50GT60BRG index.php?option=com_docman&task=doc_download&gid=7114
APT50GT60BRG
Hersteller: Microchip Technology
Description: IGBT 600V 110A 446W TO247
auf Bestellung 7 Stücke:
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Anzahl Preis ohne MwSt
2+12.37 EUR
Mindestbestellmenge: 2
APT50M38JLL 6334-apt50m38jll-datasheet
APT50M38JLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 88A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 44A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Produkt ist nicht verfügbar
APT50M50JLL 6336-apt50m50jll-datasheet
APT50M50JLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 71A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 35.5A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10550 pF @ 25 V
auf Bestellung 12 Stücke:
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1+97.91 EUR
APT50M65JFLL 6347-apt50m65jfll-datasheet
APT50M65JFLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 58A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 29A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7010 pF @ 25 V
Produkt ist nicht verfügbar
APT50M65JLL 6348-apt50m65jll-datasheet
APT50M65JLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 58A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 29A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7010 pF @ 25 V
auf Bestellung 2 Stücke:
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1+70.84 EUR
APT51M50J 7132-apt51m50j-datasheet
APT51M50J
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 51A ISOTOP
Produkt ist nicht verfügbar
APT53F80J 7135-apt53f80j-datasheet
APT53F80J
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 57A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V
auf Bestellung 109 Stücke:
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Anzahl Preis ohne MwSt
1+114.73 EUR
100+ 93.1 EUR
APT56M50L 7153-apt56m50b2-apt56m50l-datasheet
APT56M50L
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 56A TO264
Produkt ist nicht verfügbar
APT56M60L 7157-apt56m60b2-apt56m60l-datasheet
APT56M60L
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 28A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Produkt ist nicht verfügbar
APT58M50J 7162-apt58m50j-datasheet
APT58M50J
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 58A ISOTOP
Produkt ist nicht verfügbar
APT58M80J 7168-apt58m80j-datasheet
APT58M80J
Hersteller: Microchip Technology
Description: MOSFET N-CH 800V 60A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 43A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17550 pF @ 25 V
auf Bestellung 2 Stücke:
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Anzahl Preis ohne MwSt
1+108.22 EUR
APT6010B2LLG 7172-apt6010b2llg-apt6010lllg-datasheet
APT6010B2LLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 54A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Produkt ist nicht verfügbar
APT6010JFLL 7173-apt6010jfll-datasheet
APT6010JFLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 47A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Produkt ist nicht verfügbar
APT6010JLL 7174-apt6010jll-datasheet
APT6010JLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 47A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Produkt ist nicht verfügbar
APT6010LLLG 7172-apt6010b2llg-apt6010lllg-datasheet
APT6010LLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 54A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Produkt ist nicht verfügbar
APT6013JFLL 6390-apt6013jfll-datasheet
APT6013JFLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 39A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 19.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V
Produkt ist nicht verfügbar
APT6013JLL 6391-apt6013jll-datasheet
APT6013JLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 39A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 19.5A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V
Produkt ist nicht verfügbar
APT6013LLLG 7175-apt6013b2llg-apt6013lllg-datasheet
APT6013LLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 43A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 21.5A, 10V
Power Dissipation (Max): 565W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 25 V
Produkt ist nicht verfügbar
APT6017JFLL 6400-apt6017jfll-datasheet
APT6017JFLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 31A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 15.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP®
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
APT6021BFLLG 6404-apt6021bfllg-apt6021sfllg-datasheet
APT6021BFLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 29A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
Produkt ist nicht verfügbar
APT6021BLLG 6405-apt6021bllg-apt6021sllg-datasheet
APT6021BLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 29A TO247
Produkt ist nicht verfügbar
APT6029BFLLG 6412-apt6029bfllg-apt6029sfllg-datasheet
APT6029BFLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 21A TO-247
Produkt ist nicht verfügbar
APT6029BLLG 6413-apt6029bllg-apt6029sllg-datasheet
APT6029BLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 21A TO247
Produkt ist nicht verfügbar
APT6038BFLLG 6419-apt6038bfllg-apt6038sfllg-datasheet
APT6038BFLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 17A TO-247
Produkt ist nicht verfügbar
APT6038BLLG 6420-apt6038bllg-apt6038sllg-datasheet
APT6038BLLG
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 17A TO-247
Produkt ist nicht verfügbar
APT60D100BG 6423-apt60d100bg-apt60d100sg-datasheet
APT60D100BG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
auf Bestellung 1065 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.06 EUR
100+ 7.36 EUR
Mindestbestellmenge: 2
APT60D100LCTG 6424-apt60d100lctg-datasheet
APT60D100LCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1000V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Produkt ist nicht verfügbar
APT60D100SG 6423-apt60d100bg-apt60d100sg-datasheet
APT60D100SG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 60A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 280 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Produkt ist nicht verfügbar
APT60D120BG 6425-apt60d120bg-apt60d120sg-datasheet
APT60D120BG
Hersteller: Microchip Technology
Description: DIODE GP 1.2KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
auf Bestellung 1014 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.27 EUR
100+ 5.07 EUR
Mindestbestellmenge: 3
APT60D120SG 6425-apt60d120bg-apt60d120sg-datasheet
APT60D120SG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1.2KV 60A D3
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: D3Pak
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Produkt ist nicht verfügbar
APT60D20BG 6426-apt60d20bg-apt60d20sg-datasheet
APT60D20BG
Hersteller: Microchip Technology
Description: DIODE GP 200V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 31 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
Produkt ist nicht verfügbar
APT60D40BG 6430-apt60d40bg-apt60d40sg-datasheet
APT60D40BG
Hersteller: Microchip Technology
Description: DIODE GP 400V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Produkt ist nicht verfügbar
APT60D40LCTG 6431-apt60d40lctg-datasheet
APT60D40LCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 400V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 400 V
Produkt ist nicht verfügbar
APT60D60BG 123919-apt60d60bg-apt60d60sg-datasheet
APT60D60BG
Hersteller: Microchip Technology
Description: DIODE GP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
auf Bestellung 2777 Stücke:
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Anzahl Preis ohne MwSt
4+5.4 EUR
100+ 4.37 EUR
Mindestbestellmenge: 4
APT60D60LCTG 7183-apt60d60lctg-datasheet
APT60D60LCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 600V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 130 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
auf Bestellung 30 Stücke:
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Anzahl Preis ohne MwSt
2+14.63 EUR
Mindestbestellmenge: 2
APT60DQ100BG 123788-apt60dq100b-s-g-b-pdf
APT60DQ100BG
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 60A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 255 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Produkt ist nicht verfügbar
APT60DQ100LCTG 123692-apt60dq100lctg-datasheet
APT60DQ100LCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 1000V 60A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 255 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-264 [L]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Produkt ist nicht verfügbar
APT60DQ60BCTG 6436-apt60dq60bctg-datasheet
APT60DQ60BCTG
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247 [B]
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 60 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
auf Bestellung 1664 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7 EUR
100+ 5.68 EUR
Mindestbestellmenge: 3
APT60GF120JRDQ3 index.php?option=com_docman&task=doc_download&gid=7197
APT60GF120JRDQ3
Hersteller: Microchip Technology
Description: IGBT MOD 1200V 149A 625W ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: ISOTOP®
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 149 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 625 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 7.08 nF @ 25 V
auf Bestellung 10 Stücke:
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Anzahl Preis ohne MwSt
1+188.71 EUR
APT60GT60BRG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
APT60GT60BRG
Hersteller: Microchip Technology
Description: IGBT NPT 600V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247 [B]
IGBT Type: NPT
Td (on/off) @ 25°C: 26ns/395ns
Switching Energy: 3.4mJ
Gate Charge: 275 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 500 W
auf Bestellung 2065 Stücke:
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Anzahl Preis ohne MwSt
1+23.16 EUR
10+ 20.41 EUR
25+ 18.75 EUR
100+ 17.65 EUR
APT60M60JFLL APT60M60JFLL.pdf
APT60M60JFLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 70A ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 35A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 5mA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12630 pF @ 25 V
Produkt ist nicht verfügbar
APT60M60JLL APT60M60JLL.pdf
APT60M60JLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 70A ISOTOP
Produkt ist nicht verfügbar
APT60M75JFLL 6442-apt60m75jfll-datasheet
APT60M75JFLL
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 58A ISOTOP
Produkt ist nicht verfügbar
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