| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IXTA230N04T4 | IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 230A Power dissipation: 340W Case: TO263 On-state resistance: 2.9mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 32ns |
Produkt ist nicht verfügbar |
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IXTA230N075T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 66ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 230A Power dissipation: 480W Case: TO263 On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 178nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 66ns |
Produkt ist nicht verfügbar |
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IXTA48N20T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO263; 130ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 48A Power dissipation: 250W Case: TO263 On-state resistance: 50mΩ Mounting: SMD Gate charge: 60nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 130ns |
Produkt ist nicht verfügbar |
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IXTA86N20T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 86A; 550W; TO263; 140ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 86A Power dissipation: 550W Case: TO263 On-state resistance: 33mΩ Mounting: SMD Gate charge: 90nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 140ns |
Produkt ist nicht verfügbar |
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IXTA90N055T2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO263; 37ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 90A Power dissipation: 150W Case: TO263 On-state resistance: 8.4mΩ Mounting: SMD Gate charge: 42nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 37ns |
Produkt ist nicht verfügbar |
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| MIXG240W1200PZTEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV Type of module: IGBT Semiconductor structure: transistor/transistor Topology: current shunt; IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 233A Case: E3-Pack Electrical mounting: Press-in PCB Technology: X2PT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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DSA15IM200UC | IXYS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 200V Load current: 15A Semiconductor structure: single diode Max. forward voltage: 0.78V Max. forward impulse current: 200A Kind of package: reel; tape Power dissipation: 75W |
auf Bestellung 413 Stücke: Lieferzeit 14-21 Tag (e) |
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IXKN45N80C | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 44A; SOT227B; screw; 380W; 360nC Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 44A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 74mΩ Power dissipation: 380W Technology: CoolMOS™ Kind of channel: enhanced Gate charge: 360nC Reverse recovery time: 800ns Gate-source voltage: ±20V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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IXTN46N50L | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 46A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.16Ω Pulsed drain current: 100A Power dissipation: 700W Kind of channel: enhanced Gate charge: 260nC Reverse recovery time: 0.6µs Gate-source voltage: ±40V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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IXTN120P20T | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: -200V Drain current: -106A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 30mΩ Pulsed drain current: -400A Power dissipation: 830W Technology: TrenchP™ Kind of channel: enhanced Gate charge: 740nC Reverse recovery time: 300ns Gate-source voltage: ±15V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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IXTN200N10T | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 100V Drain current: 200A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 5.5mΩ Pulsed drain current: 500A Power dissipation: 550W Technology: TrenchMV™ Kind of channel: enhanced Gate charge: 152nC Reverse recovery time: 76ns Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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IXFN80N50 | IXYS |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 80A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 55mΩ Pulsed drain current: 320A Power dissipation: 694W Technology: HiPerFET™ Kind of channel: enhanced Gate charge: 380nC Reverse recovery time: 250ns Gate-source voltage: ±40V Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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IXGN100N170 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 95A Pulsed collector current: 600A Case: SOT227B Power dissipation: 735W Type of module: IGBT Features of semiconductor devices: high voltage Max. off-state voltage: 1.7kV Technology: NPT Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
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IXGN200N170 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 160A Pulsed collector current: 1.05kA Case: SOT227B Power dissipation: 1.25kW Type of module: IGBT Max. off-state voltage: 1.7kV Technology: NPT Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
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IXGN400N60B3 | IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B Electrical mounting: screw Mechanical mounting: screw Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 1.5kA Case: SOT227B Power dissipation: 1kW Type of module: IGBT Max. off-state voltage: 0.6kV Technology: GenX3™; PT Semiconductor structure: single transistor |
Produkt ist nicht verfügbar |
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IXFH12N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Power dissipation: 463W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.05Ω Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |
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IXTH12N100L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Power dissipation: 400W Case: TO247-3 On-state resistance: 1.3Ω Mounting: THT Gate charge: 155nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: linear power mosfet Reverse recovery time: 1µs |
Produkt ist nicht verfügbar |
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IXBT12N300HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268 Mounting: SMD Case: TO268 Type of transistor: IGBT Power dissipation: 160W Turn-off time: 180ns Turn-on time: 64ns Pulsed collector current: 98A Collector current: 30A Gate-emitter voltage: ±20V Collector-emitter voltage: 3kV Features of semiconductor devices: high voltage Gate charge: 62nC Technology: BiMOSFET™ |
Produkt ist nicht verfügbar |
| IXTA230N04T4 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 340W; TO263; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 340W
Case: TO263
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
Produkt ist nicht verfügbar
| IXTA230N075T2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
Produkt ist nicht verfügbar
| IXTA48N20T |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO263; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO263
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 130ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO263; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO263
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 130ns
Produkt ist nicht verfügbar
| IXTA86N20T |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 86A; 550W; TO263; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 86A
Power dissipation: 550W
Case: TO263
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 140ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 86A; 550W; TO263; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 86A
Power dissipation: 550W
Case: TO263
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 140ns
Produkt ist nicht verfügbar
| IXTA90N055T2 |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO263; 37ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 90A
Power dissipation: 150W
Case: TO263
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 37ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO263; 37ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 90A
Power dissipation: 150W
Case: TO263
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 37ns
Produkt ist nicht verfügbar
| MIXG240W1200PZTEH |
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Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: current shunt; IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; current shunt; Urmax: 1.2kV
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: current shunt; IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 233A
Case: E3-Pack
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
| DSA15IM200UC |
|
Hersteller: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
auf Bestellung 413 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 45+ | 1.62 EUR |
| 59+ | 1.23 EUR |
| 74+ | 0.97 EUR |
| 77+ | 0.93 EUR |
| IXKN45N80C |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; SOT227B; screw; 380W; 360nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 44A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 74mΩ
Power dissipation: 380W
Technology: CoolMOS™
Kind of channel: enhanced
Gate charge: 360nC
Reverse recovery time: 800ns
Gate-source voltage: ±20V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; SOT227B; screw; 380W; 360nC
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 44A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 74mΩ
Power dissipation: 380W
Technology: CoolMOS™
Kind of channel: enhanced
Gate charge: 360nC
Reverse recovery time: 800ns
Gate-source voltage: ±20V
Mechanical mounting: screw
Produkt ist nicht verfügbar
| IXTN46N50L |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 46A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.16Ω
Pulsed drain current: 100A
Power dissipation: 700W
Kind of channel: enhanced
Gate charge: 260nC
Reverse recovery time: 0.6µs
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 46A; SOT227B; screw; Idm: 100A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 46A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.16Ω
Pulsed drain current: 100A
Power dissipation: 700W
Kind of channel: enhanced
Gate charge: 260nC
Reverse recovery time: 0.6µs
Gate-source voltage: ±40V
Mechanical mounting: screw
Produkt ist nicht verfügbar
| IXTN120P20T |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -200V
Drain current: -106A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 30mΩ
Pulsed drain current: -400A
Power dissipation: 830W
Technology: TrenchP™
Kind of channel: enhanced
Gate charge: 740nC
Reverse recovery time: 300ns
Gate-source voltage: ±15V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: -200V
Drain current: -106A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 30mΩ
Pulsed drain current: -400A
Power dissipation: 830W
Technology: TrenchP™
Kind of channel: enhanced
Gate charge: 740nC
Reverse recovery time: 300ns
Gate-source voltage: ±15V
Mechanical mounting: screw
Produkt ist nicht verfügbar
| IXTN200N10T |
|
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 200A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.5mΩ
Pulsed drain current: 500A
Power dissipation: 550W
Technology: TrenchMV™
Kind of channel: enhanced
Gate charge: 152nC
Reverse recovery time: 76ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 500A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 200A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.5mΩ
Pulsed drain current: 500A
Power dissipation: 550W
Technology: TrenchMV™
Kind of channel: enhanced
Gate charge: 152nC
Reverse recovery time: 76ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Produkt ist nicht verfügbar
| IXFN80N50 | |
|
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 80A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 55mΩ
Pulsed drain current: 320A
Power dissipation: 694W
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 380nC
Reverse recovery time: 250ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 80A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 55mΩ
Pulsed drain current: 320A
Power dissipation: 694W
Technology: HiPerFET™
Kind of channel: enhanced
Gate charge: 380nC
Reverse recovery time: 250ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Produkt ist nicht verfügbar
| IXGN100N170 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 95A
Pulsed collector current: 600A
Case: SOT227B
Power dissipation: 735W
Type of module: IGBT
Features of semiconductor devices: high voltage
Max. off-state voltage: 1.7kV
Technology: NPT
Semiconductor structure: single transistor
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 95A
Pulsed collector current: 600A
Case: SOT227B
Power dissipation: 735W
Type of module: IGBT
Features of semiconductor devices: high voltage
Max. off-state voltage: 1.7kV
Technology: NPT
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
| IXGN200N170 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1.05kA
Case: SOT227B
Power dissipation: 1.25kW
Type of module: IGBT
Max. off-state voltage: 1.7kV
Technology: NPT
Semiconductor structure: single transistor
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1.05kA
Case: SOT227B
Power dissipation: 1.25kW
Type of module: IGBT
Max. off-state voltage: 1.7kV
Technology: NPT
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
| IXGN400N60B3 |
|
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.5kA
Case: SOT227B
Power dissipation: 1kW
Type of module: IGBT
Max. off-state voltage: 0.6kV
Technology: GenX3™; PT
Semiconductor structure: single transistor
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.5kA
Case: SOT227B
Power dissipation: 1kW
Type of module: IGBT
Max. off-state voltage: 0.6kV
Technology: GenX3™; PT
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
| IXFH12N100P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 12A; 463W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 463W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
| IXTH12N100L |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; 400W; TO247-3; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 1.3Ω
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
Produkt ist nicht verfügbar
| IXBT12N300HV |
|
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268
Mounting: SMD
Case: TO268
Type of transistor: IGBT
Power dissipation: 160W
Turn-off time: 180ns
Turn-on time: 64ns
Pulsed collector current: 98A
Collector current: 30A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 3kV
Features of semiconductor devices: high voltage
Gate charge: 62nC
Technology: BiMOSFET™
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268
Mounting: SMD
Case: TO268
Type of transistor: IGBT
Power dissipation: 160W
Turn-off time: 180ns
Turn-on time: 64ns
Pulsed collector current: 98A
Collector current: 30A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 3kV
Features of semiconductor devices: high voltage
Gate charge: 62nC
Technology: BiMOSFET™
Produkt ist nicht verfügbar