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RFM12P10 Harris Corporation HRISD017-5-174.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
RFM15N05L Harris Corporation HRISD017-6-84.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RFM25N06 RFM25N06 Harris Corporation INSLS12273-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
RFM3N45 RFM3N45 Harris Corporation HRISD017-4-613.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
auf Bestellung 1840 Stücke:
Lieferzeit 10-14 Tag (e)
310+1.62 EUR
Mindestbestellmenge: 310
RFM6P10 RFM6P10 Harris Corporation HRISD017-5-157.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 3064 Stücke:
Lieferzeit 10-14 Tag (e)
177+2.8 EUR
Mindestbestellmenge: 177
RFP10N12L RFP10N12L Harris Corporation HRISD017-6-66.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5A, 5V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 54904 Stücke:
Lieferzeit 10-14 Tag (e)
259+1.94 EUR
Mindestbestellmenge: 259
RFP10N15101 RFP10N15101 Harris Corporation Description: 10A, 150V, 0.3OHM, N-CHANNEL, MO
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RFP10N15L RFP10N15L Harris Corporation HRISD017-6-66.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5A, 5V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 35079 Stücke:
Lieferzeit 10-14 Tag (e)
342+1.45 EUR
Mindestbestellmenge: 342
RFP10P12 RFP10P12 Harris Corporation HRISD017-5-170.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
300+1.87 EUR
Mindestbestellmenge: 300
RFP10P15 RFP10P15 Harris Corporation HRISD017-5-170.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 75387 Stücke:
Lieferzeit 10-14 Tag (e)
130+3.76 EUR
Mindestbestellmenge: 130
RFP12N06RLE RFP12N06RLE Harris Corporation HRISD017-6-70.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 18A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
auf Bestellung 13334 Stücke:
Lieferzeit 10-14 Tag (e)
503+0.99 EUR
Mindestbestellmenge: 503
RFP12N18 Harris Corporation HRISD017-4-663.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 1550 Stücke:
Lieferzeit 10-14 Tag (e)
283+1.8 EUR
Mindestbestellmenge: 283
RFP14N05P2 RFP14N05P2 Harris Corporation Description: 14A, 50V, 0.1OHM, N-CHANNEL, MOS
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RFP14N06L RFP14N06L Harris Corporation Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 1085 Stücke:
Lieferzeit 10-14 Tag (e)
1085+0.58 EUR
Mindestbestellmenge: 1085
RFP15N05L119 Harris Corporation Description: 15A, 50V, 0.14OHM, N-CHANNEL, MO
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RFP15N06 RFP15N06 Harris Corporation HRISD017-4-680.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
auf Bestellung 27167 Stücke:
Lieferzeit 10-14 Tag (e)
683+0.71 EUR
Mindestbestellmenge: 683
RFP15N08L RFP15N08L Harris Corporation HRISD017-9-7.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 5V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
auf Bestellung 49688 Stücke:
Lieferzeit 10-14 Tag (e)
485+1 EUR
Mindestbestellmenge: 485
RFP15N12 RFP15N12 Harris Corporation HRISD017-4-686.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 12478 Stücke:
Lieferzeit 10-14 Tag (e)
260+1.86 EUR
Mindestbestellmenge: 260
RFP15P05 RFP15P05 Harris Corporation HRISD017-5-178.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 50V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 15A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
auf Bestellung 90852 Stücke:
Lieferzeit 10-14 Tag (e)
221+2.19 EUR
Mindestbestellmenge: 221
RFP17N06L Harris Corporation HRISD017-6-99.pdf?t.download=true&u=5oefqw Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 17A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 30 V
auf Bestellung 2275 Stücke:
Lieferzeit 10-14 Tag (e)
267+1.99 EUR
Mindestbestellmenge: 267
RFP18N08 RFP18N08 Harris Corporation HRISD017-4-694.pdf?t.download=true&u=5oefqw Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 4075 Stücke:
Lieferzeit 10-14 Tag (e)
273+1.81 EUR
Mindestbestellmenge: 273
RFP23N06LE Harris Corporation Description: N-CHANNEL, MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 1486 Stücke:
Lieferzeit 10-14 Tag (e)
683+0.73 EUR
Mindestbestellmenge: 683
RFP25N05L Harris Corporation HRISD017-6-103.pdf?t.download=true&u=5oefqw Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 25A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Produkt ist nicht verfügbar
RFP25N06L RFP25N06L Harris Corporation HRISD017-6-108.pdf?t.download=true&u=5oefqw Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12.5A, 5V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 1389 Stücke:
Lieferzeit 10-14 Tag (e)
115+4.23 EUR
Mindestbestellmenge: 115
RFP2N08 RFP2N08 Harris Corporation HRISD017-4-601.pdf?t.download=true&u=5oefqw Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2A, 5V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 3360 Stücke:
Lieferzeit 10-14 Tag (e)
1110+0.48 EUR
Mindestbestellmenge: 1110
RFP2N10 Harris Corporation HRISD017-4-601.pdf?t.download=true&u=5oefqw Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2A, 5V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 1323 Stücke:
Lieferzeit 10-14 Tag (e)
1323+0.51 EUR
Mindestbestellmenge: 1323
RFP2N12 Harris Corporation HRISD017-4-605.pdf?t.download=true&u=5oefqw Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 1550 Stücke:
Lieferzeit 10-14 Tag (e)
650+0.81 EUR
Mindestbestellmenge: 650
RFP2N15 RFP2N15 Harris Corporation HRISD017-4-605.pdf?t.download=true&u=5oefqw Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 2411 Stücke:
Lieferzeit 10-14 Tag (e)
452+1.1 EUR
Mindestbestellmenge: 452
RFP2N20 Harris Corporation HRISD017-4-609.pdf?t.download=true&u=5oefqw Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 1552 Stücke:
Lieferzeit 10-14 Tag (e)
503+1.06 EUR
Mindestbestellmenge: 503
RFP2P08 Harris Corporation HRISD017-5-149.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
auf Bestellung 3542 Stücke:
Lieferzeit 10-14 Tag (e)
1202+0.42 EUR
Mindestbestellmenge: 1202
RFP2P10 RFP2P10 Harris Corporation HRISD017-5-149.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 11516 Stücke:
Lieferzeit 10-14 Tag (e)
592+0.82 EUR
Mindestbestellmenge: 592
RFP30N6LER4541 RFP30N6LER4541 Harris Corporation Description: 30A, 60V, LOGIC LEVEL N CHANNEL
Packaging: Bulk
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
666+0.74 EUR
Mindestbestellmenge: 666
RFP3N45 Harris Corporation HRISD017-4-613.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RFP40N10S5001 RFP40N10S5001 Harris Corporation Description: 40A, 100V, 0.04OHM, N CHANNEL, M
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RFP42N03L Harris Corporation HRISS497-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 42A TO220AB
auf Bestellung 63600 Stücke:
Lieferzeit 10-14 Tag (e)
263+1.94 EUR
Mindestbestellmenge: 263
RFP45N02L RFP45N02L Harris Corporation HRISS551-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
auf Bestellung 1871 Stücke:
Lieferzeit 10-14 Tag (e)
606+0.81 EUR
Mindestbestellmenge: 606
RFP45N03L RFP45N03L Harris Corporation INSLS18395-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
auf Bestellung 41855 Stücke:
Lieferzeit 10-14 Tag (e)
417+1.17 EUR
Mindestbestellmenge: 417
RFP45N06LE RFP45N06LE Harris Corporation HRISS078-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 5V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
auf Bestellung 1569 Stücke:
Lieferzeit 10-14 Tag (e)
430+1.17 EUR
Mindestbestellmenge: 430
RFP4N05 RFP4N05 Harris Corporation HRISD017-4-617.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 6728 Stücke:
Lieferzeit 10-14 Tag (e)
566+0.9 EUR
Mindestbestellmenge: 566
RFP4N06 RFP4N06 Harris Corporation HRISD017-4-617.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 1079 Stücke:
Lieferzeit 10-14 Tag (e)
1079+0.53 EUR
Mindestbestellmenge: 1079
RFP4N35 RFP4N35 Harris Corporation HRISD017-4-625.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
RFP4N40 RFP4N40 Harris Corporation HRISD017-4-625.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
auf Bestellung 546 Stücke:
Lieferzeit 10-14 Tag (e)
546+0.89 EUR
Mindestbestellmenge: 546
RFP50N05 RFP50N05 Harris Corporation HRISD017-4-750.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250nA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
auf Bestellung 30202 Stücke:
Lieferzeit 10-14 Tag (e)
325+1.51 EUR
Mindestbestellmenge: 325
RFP50N06 RFP50N06 Harris Corporation FAIRS45482-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 20
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 665 Stücke:
Lieferzeit 10-14 Tag (e)
278+1.75 EUR
Mindestbestellmenge: 278
RFP50N06R4034 RFP50N06R4034 Harris Corporation Description: 50A, 60V, 0.022 OHM, N-CHANNEL
Packaging: Bulk
Part Status: Active
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
452+1.07 EUR
Mindestbestellmenge: 452
RFP6N45 Harris Corporation HRISD017-4-633.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
210+2.49 EUR
Mindestbestellmenge: 210
RFP6N50 RFP6N50 Harris Corporation HRISD017-4-633.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 1793 Stücke:
Lieferzeit 10-14 Tag (e)
160+3.03 EUR
Mindestbestellmenge: 160
RFP6P10 RFP6P10 Harris Corporation HRISD017-5-157.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 42094 Stücke:
Lieferzeit 10-14 Tag (e)
567+0.85 EUR
Mindestbestellmenge: 567
RFP70N03 RFP70N03 Harris Corporation HRISS982-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 70A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 5567 Stücke:
Lieferzeit 10-14 Tag (e)
204+2.4 EUR
Mindestbestellmenge: 204
RFP70N06S5001 RFP70N06S5001 Harris Corporation HRISS982-1.pdf?t.download=true&u=5oefqw Description: 70A, 60V, 0.014OHM, N-CHANNEL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RFP7N35 RFP7N35 Harris Corporation HRISD017-4-637.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
258+1.87 EUR
Mindestbestellmenge: 258
RFP7N40 Harris Corporation HRISD017-4-637.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
auf Bestellung 471 Stücke:
Lieferzeit 10-14 Tag (e)
249+2.01 EUR
Mindestbestellmenge: 249
RFP8N20 RFP8N20 Harris Corporation INSLS10598-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
auf Bestellung 2366 Stücke:
Lieferzeit 10-14 Tag (e)
523+0.95 EUR
Mindestbestellmenge: 523
RFP8P06LE Harris Corporation HRISS694-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 8A, 5V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
Produkt ist nicht verfügbar
RFW2N06RLE Harris Corporation HRISD017-6-35.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 5V
Power Dissipation (Max): 1.09W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 4-DIP, Hexdip
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +10V, -5V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
auf Bestellung 734 Stücke:
Lieferzeit 10-14 Tag (e)
167+2.97 EUR
Mindestbestellmenge: 167
RHR1K160 Harris Corporation INSLS00163-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 600V 1A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: 8-SOIC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 3746 Stücke:
Lieferzeit 10-14 Tag (e)
1255+0.42 EUR
Mindestbestellmenge: 1255
RHRD450S RHRD450S Harris Corporation HRISC016-5.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 500V 4A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252, (D-Pak)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 4 A
Current - Reverse Leakage @ Vr: 100 µA @ 500 V
Produkt ist nicht verfügbar
RHRD460S96 Harris Corporation HRISC016-5.pdf?t.download=true&u=5oefqw Description: DIODE AVALANCHE 600V 4A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252-3 (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 4 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 610 Stücke:
Lieferzeit 10-14 Tag (e)
357+1.39 EUR
Mindestbestellmenge: 357
RHRD640 Harris Corporation HRISD027-7-13.pdf?t.download=true&u=5oefqw Description: DIODE AVALANCHE 400V 6A I-PAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 6A
Supplier Device Package: I-PAK
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
auf Bestellung 4364 Stücke:
Lieferzeit 10-14 Tag (e)
533+0.99 EUR
Mindestbestellmenge: 533
RHRD640S RHRD640S Harris Corporation HRISC016-5.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE
Produkt ist nicht verfügbar
RFM12P10 HRISD017-5-174.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
RFM15N05L HRISD017-6-84.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RFM25N06 INSLS12273-1.pdf?t.download=true&u=5oefqw
RFM25N06
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 12.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
RFM3N45 HRISD017-4-613.pdf?t.download=true&u=5oefqw
RFM3N45
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
auf Bestellung 1840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
310+1.62 EUR
Mindestbestellmenge: 310
RFM6P10 HRISD017-5-157.pdf?t.download=true&u=5oefqw
RFM6P10
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 3064 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
177+2.8 EUR
Mindestbestellmenge: 177
RFP10N12L HRISD017-6-66.pdf?t.download=true&u=5oefqw
RFP10N12L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5A, 5V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 54904 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
259+1.94 EUR
Mindestbestellmenge: 259
RFP10N15101
RFP10N15101
Hersteller: Harris Corporation
Description: 10A, 150V, 0.3OHM, N-CHANNEL, MO
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RFP10N15L HRISD017-6-66.pdf?t.download=true&u=5oefqw
RFP10N15L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5A, 5V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 35079 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
342+1.45 EUR
Mindestbestellmenge: 342
RFP10P12 HRISD017-5-170.pdf?t.download=true&u=5oefqw
RFP10P12
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
300+1.87 EUR
Mindestbestellmenge: 300
RFP10P15 HRISD017-5-170.pdf?t.download=true&u=5oefqw
RFP10P15
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 75387 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
130+3.76 EUR
Mindestbestellmenge: 130
RFP12N06RLE HRISD017-6-70.pdf?t.download=true&u=5oefqw
RFP12N06RLE
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 18A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
auf Bestellung 13334 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
503+0.99 EUR
Mindestbestellmenge: 503
RFP12N18 HRISD017-4-663.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
auf Bestellung 1550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
283+1.8 EUR
Mindestbestellmenge: 283
RFP14N05P2
RFP14N05P2
Hersteller: Harris Corporation
Description: 14A, 50V, 0.1OHM, N-CHANNEL, MOS
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RFP14N06L
RFP14N06L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 1085 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1085+0.58 EUR
Mindestbestellmenge: 1085
RFP15N05L119
Hersteller: Harris Corporation
Description: 15A, 50V, 0.14OHM, N-CHANNEL, MO
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RFP15N06 HRISD017-4-680.pdf?t.download=true&u=5oefqw
RFP15N06
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
auf Bestellung 27167 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
683+0.71 EUR
Mindestbestellmenge: 683
RFP15N08L HRISD017-9-7.pdf?t.download=true&u=5oefqw
RFP15N08L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 5V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
auf Bestellung 49688 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
485+1 EUR
Mindestbestellmenge: 485
RFP15N12 HRISD017-4-686.pdf?t.download=true&u=5oefqw
RFP15N12
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 12478 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
260+1.86 EUR
Mindestbestellmenge: 260
RFP15P05 HRISD017-5-178.pdf?t.download=true&u=5oefqw
RFP15P05
Hersteller: Harris Corporation
Description: MOSFET P-CH 50V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 15A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
auf Bestellung 90852 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
221+2.19 EUR
Mindestbestellmenge: 221
RFP17N06L HRISD017-6-99.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 17A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 30 V
auf Bestellung 2275 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
267+1.99 EUR
Mindestbestellmenge: 267
RFP18N08 HRISD017-4-694.pdf?t.download=true&u=5oefqw
RFP18N08
Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
auf Bestellung 4075 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
273+1.81 EUR
Mindestbestellmenge: 273
RFP23N06LE
Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 1486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
683+0.73 EUR
Mindestbestellmenge: 683
RFP25N05L HRISD017-6-103.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 25A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Produkt ist nicht verfügbar
RFP25N06L HRISD017-6-108.pdf?t.download=true&u=5oefqw
RFP25N06L
Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 12.5A, 5V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 1389 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
115+4.23 EUR
Mindestbestellmenge: 115
RFP2N08 HRISD017-4-601.pdf?t.download=true&u=5oefqw
RFP2N08
Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2A, 5V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 3360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1110+0.48 EUR
Mindestbestellmenge: 1110
RFP2N10 HRISD017-4-601.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2A, 5V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 1323 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1323+0.51 EUR
Mindestbestellmenge: 1323
RFP2N12 HRISD017-4-605.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 1550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
650+0.81 EUR
Mindestbestellmenge: 650
RFP2N15 HRISD017-4-605.pdf?t.download=true&u=5oefqw
RFP2N15
Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 2411 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
452+1.1 EUR
Mindestbestellmenge: 452
RFP2N20 HRISD017-4-609.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 1552 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
503+1.06 EUR
Mindestbestellmenge: 503
RFP2P08 HRISD017-5-149.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
auf Bestellung 3542 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1202+0.42 EUR
Mindestbestellmenge: 1202
RFP2P10 HRISD017-5-149.pdf?t.download=true&u=5oefqw
RFP2P10
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 11516 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
592+0.82 EUR
Mindestbestellmenge: 592
RFP30N6LER4541
RFP30N6LER4541
Hersteller: Harris Corporation
Description: 30A, 60V, LOGIC LEVEL N CHANNEL
Packaging: Bulk
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
666+0.74 EUR
Mindestbestellmenge: 666
RFP3N45 HRISD017-4-613.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RFP40N10S5001
RFP40N10S5001
Hersteller: Harris Corporation
Description: 40A, 100V, 0.04OHM, N CHANNEL, M
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RFP42N03L HRISS497-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: MOSFET N-CH 30V 42A TO220AB
auf Bestellung 63600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
263+1.94 EUR
Mindestbestellmenge: 263
RFP45N02L HRISS551-1.pdf?t.download=true&u=5oefqw
RFP45N02L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
auf Bestellung 1871 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
606+0.81 EUR
Mindestbestellmenge: 606
RFP45N03L INSLS18395-1.pdf?t.download=true&u=5oefqw
RFP45N03L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
auf Bestellung 41855 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
417+1.17 EUR
Mindestbestellmenge: 417
RFP45N06LE HRISS078-1.pdf?t.download=true&u=5oefqw
RFP45N06LE
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 5V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
auf Bestellung 1569 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
430+1.17 EUR
Mindestbestellmenge: 430
RFP4N05 HRISD017-4-617.pdf?t.download=true&u=5oefqw
RFP4N05
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
auf Bestellung 6728 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
566+0.9 EUR
Mindestbestellmenge: 566
RFP4N06 HRISD017-4-617.pdf?t.download=true&u=5oefqw
RFP4N06
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
auf Bestellung 1079 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1079+0.53 EUR
Mindestbestellmenge: 1079
RFP4N35 HRISD017-4-625.pdf?t.download=true&u=5oefqw
RFP4N35
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
RFP4N40 HRISD017-4-625.pdf?t.download=true&u=5oefqw
RFP4N40
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
auf Bestellung 546 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
546+0.89 EUR
Mindestbestellmenge: 546
RFP50N05 HRISD017-4-750.pdf?t.download=true&u=5oefqw
RFP50N05
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250nA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
auf Bestellung 30202 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
325+1.51 EUR
Mindestbestellmenge: 325
RFP50N06 FAIRS45482-1.pdf?t.download=true&u=5oefqw
RFP50N06
Hersteller: Harris Corporation
Description: MOSFET N-CH 60V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 20
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 665 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
278+1.75 EUR
Mindestbestellmenge: 278
RFP50N06R4034
RFP50N06R4034
Hersteller: Harris Corporation
Description: 50A, 60V, 0.022 OHM, N-CHANNEL
Packaging: Bulk
Part Status: Active
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
452+1.07 EUR
Mindestbestellmenge: 452
RFP6N45 HRISD017-4-633.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
210+2.49 EUR
Mindestbestellmenge: 210
RFP6N50 HRISD017-4-633.pdf?t.download=true&u=5oefqw
RFP6N50
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
auf Bestellung 1793 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
160+3.03 EUR
Mindestbestellmenge: 160
RFP6P10 HRISD017-5-157.pdf?t.download=true&u=5oefqw
RFP6P10
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 6A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 42094 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
567+0.85 EUR
Mindestbestellmenge: 567
RFP70N03 HRISS982-1.pdf?t.download=true&u=5oefqw
RFP70N03
Hersteller: Harris Corporation
Description: MOSFET N-CH 30V 70A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 5567 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
204+2.4 EUR
Mindestbestellmenge: 204
RFP70N06S5001 HRISS982-1.pdf?t.download=true&u=5oefqw
RFP70N06S5001
Hersteller: Harris Corporation
Description: 70A, 60V, 0.014OHM, N-CHANNEL
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RFP7N35 HRISD017-4-637.pdf?t.download=true&u=5oefqw
RFP7N35
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
258+1.87 EUR
Mindestbestellmenge: 258
RFP7N40 HRISD017-4-637.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
auf Bestellung 471 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
249+2.01 EUR
Mindestbestellmenge: 249
RFP8N20 INSLS10598-1.pdf?t.download=true&u=5oefqw
RFP8N20
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
auf Bestellung 2366 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
523+0.95 EUR
Mindestbestellmenge: 523
RFP8P06LE HRISS694-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 8A, 5V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 25 V
Produkt ist nicht verfügbar
RFW2N06RLE HRISD017-6-35.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 5V
Power Dissipation (Max): 1.09W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 4-DIP, Hexdip
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +10V, -5V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V
auf Bestellung 734 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
167+2.97 EUR
Mindestbestellmenge: 167
RHR1K160 INSLS00163-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: DIODE GEN PURP 600V 1A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: 8-SOIC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 3746 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1255+0.42 EUR
Mindestbestellmenge: 1255
RHRD450S HRISC016-5.pdf?t.download=true&u=5oefqw
RHRD450S
Hersteller: Harris Corporation
Description: DIODE GEN PURP 500V 4A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252, (D-Pak)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 4 A
Current - Reverse Leakage @ Vr: 100 µA @ 500 V
Produkt ist nicht verfügbar
RHRD460S96 HRISC016-5.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: DIODE AVALANCHE 600V 4A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252-3 (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 4 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 610 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
357+1.39 EUR
Mindestbestellmenge: 357
RHRD640 HRISD027-7-13.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: DIODE AVALANCHE 400V 6A I-PAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 6A
Supplier Device Package: I-PAK
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
auf Bestellung 4364 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
533+0.99 EUR
Mindestbestellmenge: 533
RHRD640S HRISC016-5.pdf?t.download=true&u=5oefqw
RHRD640S
Hersteller: Harris Corporation
Description: RECTIFIER DIODE
Produkt ist nicht verfügbar
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