Produkte > HARRIS CORPORATION > Alle Produkte des Herstellers HARRIS CORPORATION (4104) > Seite 62 nach 69

Wählen Sie Seite:   [  << Vorherige Seite ]  1 6 12 18 24 30 36 42 48 54 57 58 59 60 61 62 63 64 65 66 67 69  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
MUR880 Harris Corporation SURC-S-A0006505173-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, 8A, 800V
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
MUR890 MUR890 Harris Corporation Description: RECTIFIER DIODE, 8A, 900V
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
MWS5101ADL3 MWS5101ADL3 Harris Corporation HRISS556-1.pdf?t.download=true&u=5oefqw Description: IC SRAM 1KBIT PARALLEL 22CDIP SB
Packaging: Bulk
Package / Case: 22-CDIP
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 22-CDIP SB
Write Cycle Time - Word, Page: 400ns
Memory Interface: Parallel
Access Time: 350 ns
Memory Organization: 256 x 4
DigiKey Programmable: Not Verified
auf Bestellung 693 Stücke:
Lieferzeit 10-14 Tag (e)
27+18.02 EUR
Mindestbestellmenge: 27
MWS5101AEL2 MWS5101AEL2 Harris Corporation HRISS556-1.pdf?t.download=true&u=5oefqw Description: IC SRAM 1KBIT PARALLEL 22DIP
Packaging: Bulk
Package / Case: 22-DIP (0.400", 10.16mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 22-PDIP
Write Cycle Time - Word, Page: 300ns
Memory Interface: Parallel
Access Time: 250 ns
Memory Organization: 256 x 4
DigiKey Programmable: Not Verified
auf Bestellung 1629 Stücke:
Lieferzeit 10-14 Tag (e)
35+13.94 EUR
Mindestbestellmenge: 35
MWS5101AEL3 MWS5101AEL3 Harris Corporation HRISS556-1.pdf?t.download=true&u=5oefqw Description: IC SRAM 1KBIT PARALLEL 22DIP
Packaging: Bulk
Package / Case: 22-DIP (0.400", 10.16mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 22-PDIP
Write Cycle Time - Word, Page: 400ns
Memory Interface: Parallel
Access Time: 350 ns
Memory Organization: 256 x 4
DigiKey Programmable: Not Verified
auf Bestellung 3445 Stücke:
Lieferzeit 10-14 Tag (e)
98+4.98 EUR
Mindestbestellmenge: 98
MWS5101DL3X Harris Corporation Description: 256X4-BIT STANDARD SRAM
Produkt ist nicht verfügbar
MWS5101EL2X MWS5101EL2X Harris Corporation HRISD004-6-49.pdf?t.download=true&u=5oefqw Description: IC SRAM 1KBIT PARALLEL 22DIP
Packaging: Bulk
Package / Case: 22-DIP (0.400", 10.16mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4V ~ 6.5V
Technology: SRAM - Synchronous
Memory Format: SRAM
Supplier Device Package: 22-PDIP
Part Status: Active
Write Cycle Time - Word, Page: 300ns
Memory Interface: Parallel
Access Time: 250 ns
Memory Organization: 256 x 4
Produkt ist nicht verfügbar
MWS5114D2 MWS5114D2 Harris Corporation HRISS566-1.pdf?t.download=true&u=5oefqw Description: IC SRAM 4KBIT PARALLEL 18SBDIP
Packaging: Bulk
Package / Case: 18-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 4Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 6.5V
Technology: SRAM - Synchronous
Memory Format: SRAM
Supplier Device Package: 18-SBDIP
Write Cycle Time - Word, Page: 250ns
Memory Interface: Parallel
Access Time: 250 ns
Memory Organization: 1K x 4
DigiKey Programmable: Not Verified
auf Bestellung 291 Stücke:
Lieferzeit 10-14 Tag (e)
17+29.56 EUR
Mindestbestellmenge: 17
N7000050FBBAAA Harris Corporation Description: N7000050FBBAAA
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
PRISM1KIT-EVAL Harris Corporation Description: WLAN PCMCIA EVAL BOARD
Packaging: Bulk
For Use With/Related Products: AM79C930
Frequency: 2.4GHz
Type: Transceiver; 802.11 b (Wi-Fi, WiFi, WLAN)
Supplied Contents: Board(s)
Part Status: Active
Produkt ist nicht verfügbar
RCA1001 Harris Corporation INSLS12265-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN DARL 80V 8A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 40mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 90 W
Produkt ist nicht verfügbar
RCA1A05 RCA1A05 Harris Corporation Description: PNP POWER TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
RCA1A09 RCA1A09 Harris Corporation Description: NPN POWER TRANSISTOR
Packaging: Bulk
auf Bestellung 1305 Stücke:
Lieferzeit 10-14 Tag (e)
533+0.92 EUR
Mindestbestellmenge: 533
RCA1A18 RCA1A18 Harris Corporation Description: NPN POWER TRANSISTOR
Packaging: Bulk
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)
468+1.05 EUR
Mindestbestellmenge: 468
RCA1C03 RCA1C03 Harris Corporation Description: NPN POWER TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
RCA1C04 RCA1C04 Harris Corporation Description: NPN POWER TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
RCA1C13 RCA1C13 Harris Corporation Description: NPN POWER TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
RCA3055 Harris Corporation INSLS12267-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 60V 15A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 400mA, 4A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
Produkt ist nicht verfügbar
RCA8766 Harris Corporation INSLS10590-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN DARL 350V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 6A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 6A, 3V
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 150 W
Produkt ist nicht verfügbar
RCA9116E RCA9116E Harris Corporation HRISD005-2-173.pdf?t.download=true&u=5oefqw Description: TRANS PNP 100V 200A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 750mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 7.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 W
auf Bestellung 581 Stücke:
Lieferzeit 10-14 Tag (e)
207+2.4 EUR
Mindestbestellmenge: 207
RCA9166A RCA9166A Harris Corporation INSLS12268-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 250V 16A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 4V
Frequency - Transition: 20MHz
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
auf Bestellung 3126 Stücke:
Lieferzeit 10-14 Tag (e)
115+4.28 EUR
Mindestbestellmenge: 115
RCD4001AK3 Harris Corporation Description: IC GATE NOR QUAD 2-INP
Packaging: Bulk
Part Status: Active
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
12+40.11 EUR
Mindestbestellmenge: 12
RCH10N50A Harris Corporation Description: RCH10N50A
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
RF1K49211 Harris Corporation HRISC016-4.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Supplier Device Package: 8-SOIC
Part Status: Active
Drain to Source Voltage (Vdss): 12 V
auf Bestellung 1588 Stücke:
Lieferzeit 10-14 Tag (e)
825+0.63 EUR
Mindestbestellmenge: 825
RF1K49223 RF1K49223 Harris Corporation HRISC016-4.pdf?t.download=true&u=5oefqw Description: DUAL P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 37842 Stücke:
Lieferzeit 10-14 Tag (e)
381+1.39 EUR
Mindestbestellmenge: 381
RF1S15N06 RF1S15N06 Harris Corporation Description: DISCRETE ,LOGIC LEVEL GATE (5V),
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
566+0.88 EUR
Mindestbestellmenge: 566
RF1S15N06SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 4894 Stücke:
Lieferzeit 10-14 Tag (e)
592+0.83 EUR
Mindestbestellmenge: 592
RF1S15N08L Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: LOGIC LEVEL GATE (5V) DEVICE
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Supplier Device Package: TO-263AB
Drain to Source Voltage (Vdss): 80 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
460+1.03 EUR
Mindestbestellmenge: 460
RF1S17N06L RF1S17N06L Harris Corporation Description: DISCRETE ,LOGIC LEVEL GATE (5V),
auf Bestellung 4370 Stücke:
Lieferzeit 10-14 Tag (e)
451+1.14 EUR
Mindestbestellmenge: 451
RF1S17N06LSM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: LOGIC LEVEL GATE (5V) DEVICE
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
498+1.02 EUR
Mindestbestellmenge: 498
RF1S22N10 Harris Corporation Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
342+1.47 EUR
Mindestbestellmenge: 342
RF1S22N10SM RF1S22N10SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 3853 Stücke:
Lieferzeit 10-14 Tag (e)
381+1.32 EUR
Mindestbestellmenge: 381
RF1S23N06LE RF1S23N06LE Harris Corporation INSLS12758-1.pdf?t.download=true&u=5oefqw Description: 23A, 60V, 0.065OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 5V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
423+1.19 EUR
Mindestbestellmenge: 423
RF1S23N06LESM RF1S23N06LESM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 5549 Stücke:
Lieferzeit 10-14 Tag (e)
468+1.07 EUR
Mindestbestellmenge: 468
RF1S23N06LESM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
437+1.15 EUR
Mindestbestellmenge: 437
RF1S25N06 Harris Corporation HRISS981-1.pdf?t.download=true&u=5oefqw Description: 25A, 60V, 0.047 OHM, N-CHANNEL P
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 25A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 25 V
Produkt ist nicht verfügbar
RF1S25N06SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 3005 Stücke:
Lieferzeit 10-14 Tag (e)
460+1.03 EUR
Mindestbestellmenge: 460
RF1S25N06SM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
437+1.09 EUR
Mindestbestellmenge: 437
RF1S25N06SMR4643 Harris Corporation Description: MOSFET N-CH 60V 25A
Packaging: Bulk
Part Status: Active
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
460+1.03 EUR
Mindestbestellmenge: 460
RF1S30N06LE Harris Corporation Description: MOSFET N-CH 60V 30A
Packaging: Bulk
Part Status: Active
auf Bestellung 1848 Stücke:
Lieferzeit 10-14 Tag (e)
381+1.25 EUR
Mindestbestellmenge: 381
RF1S30N06LESM9A RF1S30N06LESM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RF1S30P05 RF1S30P05 Harris Corporation Description: 30A, 50V, 0.065OHM, P-CHANNEL,
Packaging: Bulk
Part Status: Active
auf Bestellung 1040 Stücke:
Lieferzeit 10-14 Tag (e)
370+1.43 EUR
Mindestbestellmenge: 370
RF1S30P06 Harris Corporation Description: 30A, 60V, 0.065OHM, P-CHANNEL,
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RF1S30P06SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RF1S30P06SM9A RF1S30P06SM9A Harris Corporation FAIRS43770-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RF1S40N10LE RF1S40N10LE Harris Corporation Description: MOSFET N-CH 100V 40A
Packaging: Bulk
Part Status: Active
auf Bestellung 1368 Stücke:
Lieferzeit 10-14 Tag (e)
211+2.24 EUR
Mindestbestellmenge: 211
RF1S40N10SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
210+2.28 EUR
Mindestbestellmenge: 210
RF1S42N03L Harris Corporation HRISS497-1.pdf?t.download=true&u=5oefqw Description: 42A, 30V, 0.025 OHMS, N-CHANNEL
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
400+1.36 EUR
Mindestbestellmenge: 400
RF1S45N02L RF1S45N02L Harris Corporation HRISS551-1.pdf?t.download=true&u=5oefqw Description: 45A, 20V, 0.022OHM, N-CHANNEL LO
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
533+0.89 EUR
Mindestbestellmenge: 533
RF1S45N02LSM RF1S45N02LSM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 20 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
592+0.81 EUR
Mindestbestellmenge: 592
RF1S45N02LSM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
579+0.82 EUR
Mindestbestellmenge: 579
RF1S45N03L RF1S45N03L Harris Corporation INSLS18395-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
333+1.46 EUR
Mindestbestellmenge: 333
RF1S45N06LE RF1S45N06LE Harris Corporation HRISS078-1.pdf?t.download=true&u=5oefqw Description: 45A, 60V, 0.028OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 5V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
auf Bestellung 1530 Stücke:
Lieferzeit 10-14 Tag (e)
310+1.57 EUR
Mindestbestellmenge: 310
RF1S45N06LESM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 843 Stücke:
Lieferzeit 10-14 Tag (e)
310+1.57 EUR
Mindestbestellmenge: 310
RF1S45N06LESM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
317+1.54 EUR
Mindestbestellmenge: 317
RF1S45N06SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Supplier Device Package: TO-263AB
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
325+1.49 EUR
Mindestbestellmenge: 325
RF1S4N100SM9A Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 1000V 4.3A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)
89+5.49 EUR
Mindestbestellmenge: 89
RF1S50N06 RF1S50N06 Harris Corporation HRISS983-1.pdf?t.download=true&u=5oefqw Description: 50A, 60V, 0.022 OHM, N-CHANNEL
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
auf Bestellung 2746 Stücke:
Lieferzeit 10-14 Tag (e)
290+1.64 EUR
Mindestbestellmenge: 290
RF1S50N06LE Harris Corporation Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 4042 Stücke:
Lieferzeit 10-14 Tag (e)
281+1.69 EUR
Mindestbestellmenge: 281
RF1S50N06LESM Harris Corporation HRISS01274-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 5V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1705 Stücke:
Lieferzeit 10-14 Tag (e)
307+1.55 EUR
Mindestbestellmenge: 307
MUR880 SURC-S-A0006505173-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: RECTIFIER DIODE, 8A, 800V
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
MUR890
MUR890
Hersteller: Harris Corporation
Description: RECTIFIER DIODE, 8A, 900V
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
MWS5101ADL3 HRISS556-1.pdf?t.download=true&u=5oefqw
MWS5101ADL3
Hersteller: Harris Corporation
Description: IC SRAM 1KBIT PARALLEL 22CDIP SB
Packaging: Bulk
Package / Case: 22-CDIP
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 22-CDIP SB
Write Cycle Time - Word, Page: 400ns
Memory Interface: Parallel
Access Time: 350 ns
Memory Organization: 256 x 4
DigiKey Programmable: Not Verified
auf Bestellung 693 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+18.02 EUR
Mindestbestellmenge: 27
MWS5101AEL2 HRISS556-1.pdf?t.download=true&u=5oefqw
MWS5101AEL2
Hersteller: Harris Corporation
Description: IC SRAM 1KBIT PARALLEL 22DIP
Packaging: Bulk
Package / Case: 22-DIP (0.400", 10.16mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 22-PDIP
Write Cycle Time - Word, Page: 300ns
Memory Interface: Parallel
Access Time: 250 ns
Memory Organization: 256 x 4
DigiKey Programmable: Not Verified
auf Bestellung 1629 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
35+13.94 EUR
Mindestbestellmenge: 35
MWS5101AEL3 HRISS556-1.pdf?t.download=true&u=5oefqw
MWS5101AEL3
Hersteller: Harris Corporation
Description: IC SRAM 1KBIT PARALLEL 22DIP
Packaging: Bulk
Package / Case: 22-DIP (0.400", 10.16mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 22-PDIP
Write Cycle Time - Word, Page: 400ns
Memory Interface: Parallel
Access Time: 350 ns
Memory Organization: 256 x 4
DigiKey Programmable: Not Verified
auf Bestellung 3445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
98+4.98 EUR
Mindestbestellmenge: 98
MWS5101DL3X
Hersteller: Harris Corporation
Description: 256X4-BIT STANDARD SRAM
Produkt ist nicht verfügbar
MWS5101EL2X HRISD004-6-49.pdf?t.download=true&u=5oefqw
MWS5101EL2X
Hersteller: Harris Corporation
Description: IC SRAM 1KBIT PARALLEL 22DIP
Packaging: Bulk
Package / Case: 22-DIP (0.400", 10.16mm)
Mounting Type: Through Hole
Memory Size: 1Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4V ~ 6.5V
Technology: SRAM - Synchronous
Memory Format: SRAM
Supplier Device Package: 22-PDIP
Part Status: Active
Write Cycle Time - Word, Page: 300ns
Memory Interface: Parallel
Access Time: 250 ns
Memory Organization: 256 x 4
Produkt ist nicht verfügbar
MWS5114D2 HRISS566-1.pdf?t.download=true&u=5oefqw
MWS5114D2
Hersteller: Harris Corporation
Description: IC SRAM 4KBIT PARALLEL 18SBDIP
Packaging: Bulk
Package / Case: 18-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 4Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 6.5V
Technology: SRAM - Synchronous
Memory Format: SRAM
Supplier Device Package: 18-SBDIP
Write Cycle Time - Word, Page: 250ns
Memory Interface: Parallel
Access Time: 250 ns
Memory Organization: 1K x 4
DigiKey Programmable: Not Verified
auf Bestellung 291 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+29.56 EUR
Mindestbestellmenge: 17
N7000050FBBAAA
Hersteller: Harris Corporation
Description: N7000050FBBAAA
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
PRISM1KIT-EVAL
Hersteller: Harris Corporation
Description: WLAN PCMCIA EVAL BOARD
Packaging: Bulk
For Use With/Related Products: AM79C930
Frequency: 2.4GHz
Type: Transceiver; 802.11 b (Wi-Fi, WiFi, WLAN)
Supplied Contents: Board(s)
Part Status: Active
Produkt ist nicht verfügbar
RCA1001 INSLS12265-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: TRANS NPN DARL 80V 8A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 40mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 90 W
Produkt ist nicht verfügbar
RCA1A05
RCA1A05
Hersteller: Harris Corporation
Description: PNP POWER TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
RCA1A09
RCA1A09
Hersteller: Harris Corporation
Description: NPN POWER TRANSISTOR
Packaging: Bulk
auf Bestellung 1305 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
533+0.92 EUR
Mindestbestellmenge: 533
RCA1A18
RCA1A18
Hersteller: Harris Corporation
Description: NPN POWER TRANSISTOR
Packaging: Bulk
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
468+1.05 EUR
Mindestbestellmenge: 468
RCA1C03
RCA1C03
Hersteller: Harris Corporation
Description: NPN POWER TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
RCA1C04
RCA1C04
Hersteller: Harris Corporation
Description: NPN POWER TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
RCA1C13
RCA1C13
Hersteller: Harris Corporation
Description: NPN POWER TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
RCA3055 INSLS12267-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: TRANS NPN 60V 15A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 400mA, 4A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
Produkt ist nicht verfügbar
RCA8766 INSLS10590-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: TRANS NPN DARL 350V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 200mA, 6A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 6A, 3V
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 150 W
Produkt ist nicht verfügbar
RCA9116E HRISD005-2-173.pdf?t.download=true&u=5oefqw
RCA9116E
Hersteller: Harris Corporation
Description: TRANS PNP 100V 200A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 750mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 7.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-3
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 200 W
auf Bestellung 581 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
207+2.4 EUR
Mindestbestellmenge: 207
RCA9166A INSLS12268-1.pdf?t.download=true&u=5oefqw
RCA9166A
Hersteller: Harris Corporation
Description: TRANS NPN 250V 16A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3A, 4V
Frequency - Transition: 20MHz
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
auf Bestellung 3126 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
115+4.28 EUR
Mindestbestellmenge: 115
RCD4001AK3
Hersteller: Harris Corporation
Description: IC GATE NOR QUAD 2-INP
Packaging: Bulk
Part Status: Active
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+40.11 EUR
Mindestbestellmenge: 12
RCH10N50A
Hersteller: Harris Corporation
Description: RCH10N50A
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
RF1K49211 HRISC016-4.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Supplier Device Package: 8-SOIC
Part Status: Active
Drain to Source Voltage (Vdss): 12 V
auf Bestellung 1588 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
825+0.63 EUR
Mindestbestellmenge: 825
RF1K49223 HRISC016-4.pdf?t.download=true&u=5oefqw
RF1K49223
Hersteller: Harris Corporation
Description: DUAL P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 37842 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
381+1.39 EUR
Mindestbestellmenge: 381
RF1S15N06
RF1S15N06
Hersteller: Harris Corporation
Description: DISCRETE ,LOGIC LEVEL GATE (5V),
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
566+0.88 EUR
Mindestbestellmenge: 566
RF1S15N06SM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 4894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
592+0.83 EUR
Mindestbestellmenge: 592
RF1S15N08L HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: LOGIC LEVEL GATE (5V) DEVICE
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Supplier Device Package: TO-263AB
Drain to Source Voltage (Vdss): 80 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
460+1.03 EUR
Mindestbestellmenge: 460
RF1S17N06L
RF1S17N06L
Hersteller: Harris Corporation
Description: DISCRETE ,LOGIC LEVEL GATE (5V),
auf Bestellung 4370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
451+1.14 EUR
Mindestbestellmenge: 451
RF1S17N06LSM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: LOGIC LEVEL GATE (5V) DEVICE
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
498+1.02 EUR
Mindestbestellmenge: 498
RF1S22N10
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
342+1.47 EUR
Mindestbestellmenge: 342
RF1S22N10SM HRISC016-2.pdf?t.download=true&u=5oefqw
RF1S22N10SM
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 3853 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
381+1.32 EUR
Mindestbestellmenge: 381
RF1S23N06LE INSLS12758-1.pdf?t.download=true&u=5oefqw
RF1S23N06LE
Hersteller: Harris Corporation
Description: 23A, 60V, 0.065OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23A, 5V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
423+1.19 EUR
Mindestbestellmenge: 423
RF1S23N06LESM HRISC016-2.pdf?t.download=true&u=5oefqw
RF1S23N06LESM
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 5549 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
468+1.07 EUR
Mindestbestellmenge: 468
RF1S23N06LESM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
437+1.15 EUR
Mindestbestellmenge: 437
RF1S25N06 HRISS981-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: 25A, 60V, 0.047 OHM, N-CHANNEL P
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 25A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 25 V
Produkt ist nicht verfügbar
RF1S25N06SM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 3005 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
460+1.03 EUR
Mindestbestellmenge: 460
RF1S25N06SM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
437+1.09 EUR
Mindestbestellmenge: 437
RF1S25N06SMR4643
Hersteller: Harris Corporation
Description: MOSFET N-CH 60V 25A
Packaging: Bulk
Part Status: Active
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
460+1.03 EUR
Mindestbestellmenge: 460
RF1S30N06LE
Hersteller: Harris Corporation
Description: MOSFET N-CH 60V 30A
Packaging: Bulk
Part Status: Active
auf Bestellung 1848 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
381+1.25 EUR
Mindestbestellmenge: 381
RF1S30N06LESM9A HRISC016-2.pdf?t.download=true&u=5oefqw
RF1S30N06LESM9A
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RF1S30P05
RF1S30P05
Hersteller: Harris Corporation
Description: 30A, 50V, 0.065OHM, P-CHANNEL,
Packaging: Bulk
Part Status: Active
auf Bestellung 1040 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
370+1.43 EUR
Mindestbestellmenge: 370
RF1S30P06
Hersteller: Harris Corporation
Description: 30A, 60V, 0.065OHM, P-CHANNEL,
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
RF1S30P06SM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RF1S30P06SM9A FAIRS43770-1.pdf?t.download=true&u=5oefqw
RF1S30P06SM9A
Hersteller: Harris Corporation
Description: P-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
RF1S40N10LE
RF1S40N10LE
Hersteller: Harris Corporation
Description: MOSFET N-CH 100V 40A
Packaging: Bulk
Part Status: Active
auf Bestellung 1368 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
211+2.24 EUR
Mindestbestellmenge: 211
RF1S40N10SM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
210+2.28 EUR
Mindestbestellmenge: 210
RF1S42N03L HRISS497-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: 42A, 30V, 0.025 OHMS, N-CHANNEL
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
400+1.36 EUR
Mindestbestellmenge: 400
RF1S45N02L HRISS551-1.pdf?t.download=true&u=5oefqw
RF1S45N02L
Hersteller: Harris Corporation
Description: 45A, 20V, 0.022OHM, N-CHANNEL LO
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
533+0.89 EUR
Mindestbestellmenge: 533
RF1S45N02LSM HRISC016-2.pdf?t.download=true&u=5oefqw
RF1S45N02LSM
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 20 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
592+0.81 EUR
Mindestbestellmenge: 592
RF1S45N02LSM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
579+0.82 EUR
Mindestbestellmenge: 579
RF1S45N03L INSLS18395-1.pdf?t.download=true&u=5oefqw
RF1S45N03L
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 5V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
333+1.46 EUR
Mindestbestellmenge: 333
RF1S45N06LE HRISS078-1.pdf?t.download=true&u=5oefqw
RF1S45N06LE
Hersteller: Harris Corporation
Description: 45A, 60V, 0.028OHM, N-CHANNEL,
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 5V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
auf Bestellung 1530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
310+1.57 EUR
Mindestbestellmenge: 310
RF1S45N06LESM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 843 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
310+1.57 EUR
Mindestbestellmenge: 310
RF1S45N06LESM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
317+1.54 EUR
Mindestbestellmenge: 317
RF1S45N06SM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A
Supplier Device Package: TO-263AB
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
325+1.49 EUR
Mindestbestellmenge: 325
RF1S4N100SM9A HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: MOSFET N-CH 1000V 4.3A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
89+5.49 EUR
Mindestbestellmenge: 89
RF1S50N06 HRISS983-1.pdf?t.download=true&u=5oefqw
RF1S50N06
Hersteller: Harris Corporation
Description: 50A, 60V, 0.022 OHM, N-CHANNEL
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK (TO-262)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
auf Bestellung 2746 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
290+1.64 EUR
Mindestbestellmenge: 290
RF1S50N06LE
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 4042 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
281+1.69 EUR
Mindestbestellmenge: 281
RF1S50N06LESM HRISS01274-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 5V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1705 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
307+1.55 EUR
Mindestbestellmenge: 307
Wählen Sie Seite:   [  << Vorherige Seite ]  1 6 12 18 24 30 36 42 48 54 57 58 59 60 61 62 63 64 65 66 67 69  [ Nächste Seite >> ]