Produkte > GOOD-ARK SEMICONDUCTOR > Alle Produkte des Herstellers GOOD-ARK SEMICONDUCTOR (1269) > Seite 20 nach 22
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
SMURP1040 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Part Status: Active Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: 8-PowerQFN (4.9x5.8) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 5915 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF02N15 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
SSF02N15 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
auf Bestellung 5725 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF0910S | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF0910S | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF1341 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 8 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF1341 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 8 V |
auf Bestellung 2437 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2116 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Tc) Drain to Source Voltage (Vdss): 20V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), 2.5A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
SSF2116 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Tc) Drain to Source Voltage (Vdss): 20V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), 2.5A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V |
auf Bestellung 1920 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2145CH6 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 20V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 10V Supplier Device Package: 6-TSOP Part Status: Active Vgs(th) (Max) @ Id: 1V @ 250µA Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), 2.9A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2145CH6 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) Power - Max: 1.7W Drain to Source Voltage (Vdss): 20V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 10V Supplier Device Package: 6-TSOP Part Status: Active Vgs(th) (Max) @ Id: 1V @ 250µA Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), 2.9A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V |
auf Bestellung 2950 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2215 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2215 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active |
auf Bestellung 2895 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2219Y | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 312mW (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2219Y | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 312mW (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 |
auf Bestellung 2982 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2220Y | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) Power - Max: 312W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2220Y | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) Power - Max: 312W (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 |
auf Bestellung 2840 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2300 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.3W Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2300 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V Power Dissipation (Max): 1.3W Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
auf Bestellung 2865 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2302 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
auf Bestellung 1781 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2302 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2307 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V |
auf Bestellung 2966 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2307 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2311S | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V Power Dissipation (Max): 1.56W (Tc) Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 10 V |
auf Bestellung 2950 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2311S | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V Power Dissipation (Max): 1.56W (Tc) Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2314 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Power Dissipation (Max): 1.56W (Tc) Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2314 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Power Dissipation (Max): 1.56W (Tc) Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
SSF2318E | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2318E | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V |
auf Bestellung 2512 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2319CJ1 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Power Dissipation (Max): 312mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
auf Bestellung 4950 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2319CJ1 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Power Dissipation (Max): 312mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
SSF2319GE | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Power Dissipation (Max): 275mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-723 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2319GE | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V Power Dissipation (Max): 275mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-723 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
Produkt ist nicht verfügbar |
|||||||||||||||
![]() |
SSF2320Y | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Power Dissipation (Max): 312mW (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2320Y | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Power Dissipation (Max): 312mW (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V |
auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2341E | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2341E | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 10 V |
auf Bestellung 2580 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2429 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF2429 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V |
auf Bestellung 5475 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF3051G7 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V Power Dissipation (Max): 1.7W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF3051G7 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V Power Dissipation (Max): 1.7W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-6L Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V |
auf Bestellung 2750 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF3341 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF3341 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 15 V |
auf Bestellung 5990 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF3402 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF3402 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V Power Dissipation (Max): 1.38W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
auf Bestellung 5429 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF3611E | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 15 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF3611E | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 15 V |
auf Bestellung 3996 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF3714 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Tc), 3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V, 65mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF3714 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Tc), 3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V, 65mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-6L Part Status: Active |
auf Bestellung 5865 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF6007 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V Current - Continuous Drain (Id) @ 25°C: 130mA (Tc) Rds On (Max) @ Id, Vgs: 7Ohm @ 130mA, 10V Power Dissipation (Max): 230mW (Tc) |
auf Bestellung 5985 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF6007 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V Current - Continuous Drain (Id) @ 25°C: 130mA (Tc) Rds On (Max) @ Id, Vgs: 7Ohm @ 130mA, 10V Power Dissipation (Max): 230mW (Tc) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF6092G1 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A Rds On (Max) @ Id, Vgs: 92mOhm @ 2.7A, 10V Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 25 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF6092G1 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A Rds On (Max) @ Id, Vgs: 92mOhm @ 2.7A, 10V Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 25 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF6670 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF6670 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
auf Bestellung 7970 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF6909 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V Power Dissipation (Max): 2W (Ta) Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF6909 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V Power Dissipation (Max): 2W (Ta) Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V |
auf Bestellung 2798 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF7120 | Good-Ark Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 312mW (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
SSF7120 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 312mW (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V FET Feature: Standard Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
SSF7320 | Good-Ark Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Power Dissipation (Max): 450mW Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-723 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V |
Produkt ist nicht verfügbar |
SMURP1040 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: RECTIFIER, ULTRAFAST GLASS PASSI
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: 8-PowerQFN (4.9x5.8)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: RECTIFIER, ULTRAFAST GLASS PASSI
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: 8-PowerQFN (4.9x5.8)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 5915 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 0.99 EUR |
21+ | 0.85 EUR |
100+ | 0.59 EUR |
500+ | 0.49 EUR |
1000+ | 0.42 EUR |
SSF02N15 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 1.4A, 150V
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 1.4A, 150V
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar
SSF02N15 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 1.4A, 150V
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 1.4A, 150V
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 5725 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.79 EUR |
28+ | 0.63 EUR |
31+ | 0.58 EUR |
100+ | 0.43 EUR |
250+ | 0.39 EUR |
500+ | 0.32 EUR |
1000+ | 0.24 EUR |
SSF0910S |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 2.0A, 100V
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
Description: MOSFET, N-CH, SINGLE, 2.0A, 100V
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.15 EUR |
6000+ | 0.14 EUR |
SSF0910S |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 2.0A, 100V
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
Description: MOSFET, N-CH, SINGLE, 2.0A, 100V
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 10V
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
36+ | 0.5 EUR |
40+ | 0.45 EUR |
100+ | 0.31 EUR |
250+ | 0.26 EUR |
500+ | 0.21 EUR |
1000+ | 0.16 EUR |
SSF1341 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -3.5A, -12
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 8 V
Description: MOSFET, P-CH, SINGLE, -3.5A, -12
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 8 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.11 EUR |
6000+ | 0.093 EUR |
SSF1341 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -3.5A, -12
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 8 V
Description: MOSFET, P-CH, SINGLE, -3.5A, -12
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 8 V
auf Bestellung 2437 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
36+ | 0.5 EUR |
43+ | 0.42 EUR |
100+ | 0.26 EUR |
250+ | 0.2 EUR |
500+ | 0.17 EUR |
1000+ | 0.12 EUR |
SSF2116 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET N/P-CH 20V 3.8A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V
Description: MOSFET N/P-CH 20V 3.8A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V
Produkt ist nicht verfügbar
SSF2116 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET N/P-CH 20V 3.8A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V
Description: MOSFET N/P-CH 20V 3.8A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, 100mOhm @ 3A, 4.5V
auf Bestellung 1920 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.74 EUR |
33+ | 0.55 EUR |
37+ | 0.48 EUR |
100+ | 0.31 EUR |
250+ | 0.26 EUR |
500+ | 0.2 EUR |
1000+ | 0.16 EUR |
SSF2145CH6 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET 20V 4.8A/2.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 10V
Supplier Device Package: 6-TSOP
Part Status: Active
Vgs(th) (Max) @ Id: 1V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V
Description: MOSFET 20V 4.8A/2.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 10V
Supplier Device Package: 6-TSOP
Part Status: Active
Vgs(th) (Max) @ Id: 1V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.13 EUR |
SSF2145CH6 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET 20V 4.8A/2.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 10V
Supplier Device Package: 6-TSOP
Part Status: Active
Vgs(th) (Max) @ Id: 1V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V
Description: MOSFET 20V 4.8A/2.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.7W
Drain to Source Voltage (Vdss): 20V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 10V
Supplier Device Package: 6-TSOP
Part Status: Active
Vgs(th) (Max) @ Id: 1V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc), 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V, 80mOhm @ 3A, 4.5V
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 0.6 EUR |
48+ | 0.37 EUR |
58+ | 0.31 EUR |
100+ | 0.23 EUR |
250+ | 0.2 EUR |
500+ | 0.17 EUR |
1000+ | 0.16 EUR |
SSF2215 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2P-CH 20V 3A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Description: MOSFET 2P-CH 20V 3A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.15 EUR |
SSF2215 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2P-CH 20V 3A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Description: MOSFET 2P-CH 20V 3A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 15V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
auf Bestellung 2895 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
36+ | 0.5 EUR |
40+ | 0.45 EUR |
100+ | 0.31 EUR |
250+ | 0.26 EUR |
500+ | 0.21 EUR |
1000+ | 0.16 EUR |
SSF2219Y |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2P-CH 20V 0.4A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 312mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2P-CH 20V 0.4A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 312mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.11 EUR |
SSF2219Y |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2P-CH 20V 0.4A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 312mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2P-CH 20V 0.4A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 312mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 2982 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 0.6 EUR |
41+ | 0.44 EUR |
46+ | 0.38 EUR |
100+ | 0.25 EUR |
250+ | 0.21 EUR |
500+ | 0.16 EUR |
1000+ | 0.13 EUR |
SSF2220Y |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 312W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 312W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.11 EUR |
SSF2220Y |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 312W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 312W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 2840 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 0.6 EUR |
41+ | 0.44 EUR |
46+ | 0.38 EUR |
100+ | 0.25 EUR |
250+ | 0.21 EUR |
500+ | 0.16 EUR |
1000+ | 0.13 EUR |
SSF2300 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.084 EUR |
6000+ | 0.073 EUR |
SSF2300 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
auf Bestellung 2865 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
38+ | 0.48 EUR |
45+ | 0.39 EUR |
54+ | 0.33 EUR |
100+ | 0.21 EUR |
250+ | 0.16 EUR |
500+ | 0.14 EUR |
1000+ | 0.093 EUR |
SSF2302 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4A, 20V, S
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 4A, 20V, S
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
auf Bestellung 1781 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
44+ | 0.4 EUR |
53+ | 0.34 EUR |
63+ | 0.28 EUR |
100+ | 0.18 EUR |
250+ | 0.14 EUR |
500+ | 0.12 EUR |
1000+ | 0.08 EUR |
SSF2302 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4A, 20V, S
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 4A, 20V, S
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.072 EUR |
SSF2307 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -6.50A, -2
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V
Description: MOSFET, P-CH, SINGLE, -6.50A, -2
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V
auf Bestellung 2966 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
43+ | 0.42 EUR |
100+ | 0.2 EUR |
500+ | 0.17 EUR |
1000+ | 0.12 EUR |
SSF2307 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -6.50A, -2
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V
Description: MOSFET, P-CH, SINGLE, -6.50A, -2
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Power Dissipation (Max): 1.56W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 4.5V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.1 EUR |
6000+ | 0.095 EUR |
SSF2311S |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4.7A, -20
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -4.7A, -20
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 10 V
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
36+ | 0.5 EUR |
43+ | 0.42 EUR |
100+ | 0.26 EUR |
250+ | 0.2 EUR |
500+ | 0.17 EUR |
1000+ | 0.12 EUR |
SSF2311S |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4.7A, -20
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -4.7A, -20
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.11 EUR |
SSF2314 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.12 EUR |
6000+ | 0.11 EUR |
SSF2314 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 4.5A, 20V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.56W (Tc)
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 775 pF @ 10 V
Produkt ist nicht verfügbar
SSF2318E |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 6.5A, 20V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 6.5A, 20V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.11 EUR |
SSF2318E |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 6.5A, 20V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 6.5A, 20V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V
auf Bestellung 2512 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
31+ | 0.58 EUR |
42+ | 0.43 EUR |
48+ | 0.37 EUR |
100+ | 0.24 EUR |
250+ | 0.2 EUR |
500+ | 0.16 EUR |
1000+ | 0.12 EUR |
SSF2319CJ1 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.45A, -2
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Power Dissipation (Max): 312mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -0.45A, -2
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Power Dissipation (Max): 312mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 4950 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
44+ | 0.4 EUR |
53+ | 0.34 EUR |
63+ | 0.28 EUR |
100+ | 0.18 EUR |
250+ | 0.14 EUR |
500+ | 0.12 EUR |
1000+ | 0.08 EUR |
SSF2319CJ1 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.45A, -2
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Power Dissipation (Max): 312mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -0.45A, -2
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Power Dissipation (Max): 312mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Produkt ist nicht verfügbar
SSF2319GE |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.40A, -2
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Power Dissipation (Max): 275mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -0.40A, -2
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Power Dissipation (Max): 275mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8000+ | 0.075 EUR |
16000+ | 0.062 EUR |
SSF2319GE |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.40A, -2
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Power Dissipation (Max): 275mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -0.40A, -2
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 300mA, 4.5V
Power Dissipation (Max): 275mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Produkt ist nicht verfügbar
SSF2320Y |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Power Dissipation (Max): 312mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Power Dissipation (Max): 312mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.072 EUR |
6000+ | 0.063 EUR |
15000+ | 0.054 EUR |
SSF2320Y |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Power Dissipation (Max): 312mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Power Dissipation (Max): 312mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
44+ | 0.4 EUR |
53+ | 0.34 EUR |
63+ | 0.28 EUR |
100+ | 0.18 EUR |
250+ | 0.14 EUR |
500+ | 0.12 EUR |
1000+ | 0.08 EUR |
SSF2341E |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4A, -20V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -4A, -20V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.12 EUR |
SSF2341E |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4A, -20V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -4A, -20V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 10 V
auf Bestellung 2580 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
37+ | 0.48 EUR |
43+ | 0.42 EUR |
100+ | 0.27 EUR |
250+ | 0.22 EUR |
500+ | 0.18 EUR |
1000+ | 0.14 EUR |
SSF2429 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -5A, -20V,
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -5A, -20V,
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
SSF2429 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -5A, -20V,
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V
Description: MOSFET, P-CH, SINGLE, -5A, -20V,
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 10 V
auf Bestellung 5475 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
36+ | 0.49 EUR |
40+ | 0.44 EUR |
100+ | 0.31 EUR |
250+ | 0.26 EUR |
500+ | 0.21 EUR |
1000+ | 0.16 EUR |
SSF3051G7 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4A, -30V,
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.7W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -4A, -30V,
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.7W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.13 EUR |
SSF3051G7 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4A, -30V,
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.7W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -4A, -30V,
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.4A, 10V
Power Dissipation (Max): 1.7W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 15 V
auf Bestellung 2750 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 0.69 EUR |
35+ | 0.52 EUR |
39+ | 0.45 EUR |
100+ | 0.29 EUR |
250+ | 0.24 EUR |
500+ | 0.19 EUR |
1000+ | 0.15 EUR |
SSF3341 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4.2A, -30
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -4.2A, -30
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.12 EUR |
SSF3341 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -4.2A, -30
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -4.2A, -30
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.2A, 10V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 712 pF @ 15 V
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
32+ | 0.55 EUR |
38+ | 0.46 EUR |
100+ | 0.29 EUR |
250+ | 0.23 EUR |
500+ | 0.19 EUR |
1000+ | 0.13 EUR |
SSF3402 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 5A, 30V, S
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 5A, 30V, S
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.11 EUR |
SSF3402 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 5A, 30V, S
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 5A, 30V, S
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
Power Dissipation (Max): 1.38W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 5429 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
35+ | 0.51 EUR |
42+ | 0.42 EUR |
100+ | 0.27 EUR |
250+ | 0.21 EUR |
500+ | 0.18 EUR |
1000+ | 0.12 EUR |
SSF3611E |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -12A, -30V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -12A, -30V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.25 EUR |
8000+ | 0.23 EUR |
12000+ | 0.22 EUR |
SSF3611E |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -12A, -30V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 15 V
Description: MOSFET, P-CH, SINGLE, -12A, -30V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3224 pF @ 15 V
auf Bestellung 3996 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.11 EUR |
26+ | 0.68 EUR |
32+ | 0.56 EUR |
100+ | 0.44 EUR |
250+ | 0.37 EUR |
500+ | 0.33 EUR |
1000+ | 0.3 EUR |
SSF3714 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET N/P-CH 30V 4A/3A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc), 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V, 65mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Description: MOSFET N/P-CH 30V 4A/3A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc), 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V, 65mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.15 EUR |
SSF3714 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET N/P-CH 30V 4A/3A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc), 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V, 65mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Description: MOSFET N/P-CH 30V 4A/3A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc), 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V, 65mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
auf Bestellung 5865 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 0.81 EUR |
30+ | 0.6 EUR |
34+ | 0.52 EUR |
100+ | 0.34 EUR |
250+ | 0.28 EUR |
500+ | 0.22 EUR |
1000+ | 0.17 EUR |
SSF6007 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.13A, -5
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
Current - Continuous Drain (Id) @ 25°C: 130mA (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 130mA, 10V
Power Dissipation (Max): 230mW (Tc)
Description: MOSFET, P-CH, SINGLE, -0.13A, -5
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
Current - Continuous Drain (Id) @ 25°C: 130mA (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 130mA, 10V
Power Dissipation (Max): 230mW (Tc)
auf Bestellung 5985 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 0.32 EUR |
59+ | 0.3 EUR |
62+ | 0.29 EUR |
108+ | 0.16 EUR |
250+ | 0.12 EUR |
500+ | 0.1 EUR |
1000+ | 0.069 EUR |
SSF6007 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -0.13A, -5
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
Current - Continuous Drain (Id) @ 25°C: 130mA (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 130mA, 10V
Power Dissipation (Max): 230mW (Tc)
Description: MOSFET, P-CH, SINGLE, -0.13A, -5
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 5 V
Current - Continuous Drain (Id) @ 25°C: 130mA (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 130mA, 10V
Power Dissipation (Max): 230mW (Tc)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.059 EUR |
SSF6092G1 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 2.7A, 60V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 2.7A, 60V,
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.12 EUR |
6000+ | 0.11 EUR |
SSF6092G1 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 2.7A, 60V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 25 V
Description: MOSFET, N-CH, SINGLE, 2.7A, 60V,
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A
Rds On (Max) @ Id, Vgs: 92mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.67 EUR |
36+ | 0.5 EUR |
41+ | 0.44 EUR |
100+ | 0.28 EUR |
250+ | 0.23 EUR |
500+ | 0.19 EUR |
1000+ | 0.14 EUR |
SSF6670 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2N-CH 60V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.23 EUR |
SSF6670 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET 2N-CH 60V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2N-CH 60V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 7970 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.65 EUR |
32+ | 0.55 EUR |
35+ | 0.52 EUR |
100+ | 0.41 EUR |
250+ | 0.38 EUR |
500+ | 0.33 EUR |
1000+ | 0.25 EUR |
SSF6909 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -3.2A, -60
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Description: MOSFET, P-CH, SINGLE, -3.2A, -60
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.18 EUR |
SSF6909 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, P-CH, SINGLE, -3.2A, -60
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Description: MOSFET, P-CH, SINGLE, -3.2A, -60
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
auf Bestellung 2798 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.62 EUR |
35+ | 0.51 EUR |
38+ | 0.46 EUR |
100+ | 0.34 EUR |
250+ | 0.31 EUR |
500+ | 0.26 EUR |
1000+ | 0.19 EUR |
SSF7120 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET N/P-CH 20V 0.8A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 312mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET N/P-CH 20V 0.8A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 312mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.63 EUR |
38+ | 0.47 EUR |
43+ | 0.41 EUR |
100+ | 0.27 EUR |
250+ | 0.22 EUR |
500+ | 0.18 EUR |
1000+ | 0.14 EUR |
SSF7120 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET N/P-CH 20V 0.8A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 312mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET N/P-CH 20V 0.8A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 312mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), 400mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, 78pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, 600mOhm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.12 EUR |
6000+ | 0.11 EUR |
SSF7320 |
![]() |
Hersteller: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Power Dissipation (Max): 450mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V
Description: MOSFET, N-CH, SINGLE, 0.8A, 20V,
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Power Dissipation (Max): 450mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 10 V
Produkt ist nicht verfügbar