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TPN2R903PL,L1Q

TPN2R903PL,L1Q Toshiba Semiconductor and Storage

TPN2R903PL_datasheet_en_20191030.pdf?did=55425&prodName=TPN2R903PL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 70A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.46 EUR
10000+ 0.42 EUR
Mindestbestellmenge: 5000
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Technische Details TPN2R903PL,L1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 30V 70A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V, Power Dissipation (Max): 630mW (Ta), 75W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V.

Weitere Produktangebote TPN2R903PL,L1Q nach Preis ab 0.44 EUR bis 1.29 EUR

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TPN2R903PL,L1Q TPN2R903PL,L1Q Hersteller : Toshiba Semiconductor and Storage TPN2R903PL_datasheet_en_20191030.pdf?did=55425&prodName=TPN2R903PL Description: MOSFET N-CH 30V 70A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 35A, 10V
Power Dissipation (Max): 630mW (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
auf Bestellung 37456 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.27 EUR
16+ 1.11 EUR
100+ 0.76 EUR
500+ 0.64 EUR
1000+ 0.54 EUR
2000+ 0.48 EUR
Mindestbestellmenge: 14
TPN2R903PL,L1Q TPN2R903PL,L1Q Hersteller : Toshiba TPN2R903PL_datasheet_en_20191030-1568596.pdf MOSFET POWER MOSFET TRANSISTOR
auf Bestellung 14701 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.29 EUR
10+ 1.12 EUR
100+ 0.78 EUR
500+ 0.65 EUR
1000+ 0.49 EUR
5000+ 0.44 EUR
Mindestbestellmenge: 3