auf Bestellung 141035 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.85 EUR |
10+ | 0.74 EUR |
100+ | 0.54 EUR |
500+ | 0.47 EUR |
1000+ | 0.43 EUR |
3000+ | 0.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TPN19008QM,LQ Toshiba
Description: MOSFET N-CH 80V 34A 8TSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 17A, 10V, Power Dissipation (Max): 630mW (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 200µA, Supplier Device Package: 8-TSON Advance (3.1x3.1), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 40 V.
Weitere Produktangebote TPN19008QM,LQ nach Preis ab 0.45 EUR bis 1.06 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TPN19008QM,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 34A 8TSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 17A, 10V Power Dissipation (Max): 630mW (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 40 V |
auf Bestellung 4726 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||
TPN19008QM,LQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 80V 34A 8TSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 17A, 10V Power Dissipation (Max): 630mW (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 200µA Supplier Device Package: 8-TSON Advance (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 40 V |
Produkt ist nicht verfügbar |