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TK3R3E08QM,S1X

TK3R3E08QM,S1X Toshiba


tk3r3e08qm_datasheet_en_20210201.pdf Hersteller: Toshiba
Trans MOSFET N-CH Si 80V 200A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 185 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
58+2.67 EUR
63+ 2.39 EUR
100+ 1.97 EUR
Mindestbestellmenge: 58
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Technische Details TK3R3E08QM,S1X Toshiba

Description: UMOS10 TO-220AB 80V 3.3MOHM, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.3mA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V.

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TK3R3E08QM,S1X TK3R3E08QM,S1X Hersteller : Toshiba tk3r3e08qm_datasheet_en_20210201.pdf Trans MOSFET N-CH Si 80V 200A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
58+2.67 EUR
63+ 2.39 EUR
100+ 1.97 EUR
Mindestbestellmenge: 58
TK3R3E08QM,S1X TK3R3E08QM,S1X Hersteller : Toshiba TK3R3E08QM_datasheet_en_20210201-2486496.pdf MOSFET UMOS10 TO-220AB 80V 3.3mohm
auf Bestellung 1285 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.7 EUR
10+ 3.08 EUR
100+ 2.5 EUR
500+ 2.13 EUR
1000+ 1.75 EUR
2500+ 1.65 EUR
5000+ 1.62 EUR
TK3R3E08QM,S1X TK3R3E08QM,S1X Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=70293&prodName=TK3R3E08QM Description: UMOS10 TO-220AB 80V 3.3MOHM
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.3mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7670 pF @ 40 V
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.87 EUR
10+ 3.49 EUR
100+ 2.8 EUR
Mindestbestellmenge: 5