auf Bestellung 3769 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.01 EUR |
10+ | 1.65 EUR |
100+ | 1.28 EUR |
500+ | 1.09 EUR |
1000+ | 0.89 EUR |
Produktrezensionen
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Technische Details TK33S10N1L,LXHQ Toshiba
Description: MOSFET N-CH 100V 33A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Ta), Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V.
Weitere Produktangebote TK33S10N1L,LXHQ nach Preis ab 0.9 EUR bis 2.06 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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TK33S10N1L,LXHQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 33A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V |
auf Bestellung 3849 Stücke: Lieferzeit 10-14 Tag (e) |
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TK33S10N1L,LXHQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 33A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 16.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 500µA Supplier Device Package: DPAK+ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 10 V |
auf Bestellung 1985 Stücke: Lieferzeit 10-14 Tag (e) |
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TK33S10N1L,LXHQ | Hersteller : Toshiba | Trans MOSFET N-CH Si 100V 33A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R |
Produkt ist nicht verfügbar |